NVBLS1D1N08H onsemi
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
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Technische Details NVBLS1D1N08H onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF, Packaging: Tape & Reel (TR), Package / Case: 8-PowerSFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc), Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V, Power Dissipation (Max): 4.2W (Ta), 311W (Tc), Vgs(th) (Max) @ Id: 4V @ 650µA, Supplier Device Package: 8-HPSOF, Grade: Automotive, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 80 V, Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V, Qualification: AEC-Q101.
Weitere Produktangebote NVBLS1D1N08H nach Preis ab 7.54 EUR bis 15.43 EUR
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NVBLS1D1N08H | onsemi |
MOSFETs T8-80V IN TOLL |
auf Bestellung 1367 Stücke: Lieferzeit 10-14 Tag (e) |
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NVBLS1D1N08H | onsemi |
Description: MOSFET N-CH 80V 41A/351A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc) Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V Power Dissipation (Max): 4.2W (Ta), 311W (Tc) Vgs(th) (Max) @ Id: 4V @ 650µA Supplier Device Package: 8-HPSOF Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V Qualification: AEC-Q101 |
auf Bestellung 6874 Stücke: Lieferzeit 10-14 Tag (e) |
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| NVBLS1D1N08H | ON Semiconductor |
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auf Bestellung 438 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| NVBLS1D1N08H |
|
Hersteller: onsemi
MOSFETs T8-80V IN TOLL
MOSFETs T8-80V IN TOLL
auf Bestellung 1367 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 13.99 EUR |
| 10+ | 10.14 EUR |
| 100+ | 8.48 EUR |
| 1000+ | 7.56 EUR |
| 2000+ | 7.54 EUR |
| NVBLS1D1N08H |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 41A/351A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 41A (Ta), 351A (Tc)
Rds On (Max) @ Id, Vgs: 1.05mOhm @ 50A, 10V
Power Dissipation (Max): 4.2W (Ta), 311W (Tc)
Vgs(th) (Max) @ Id: 4V @ 650µA
Supplier Device Package: 8-HPSOF
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 166 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11200 pF @ 40 V
Qualification: AEC-Q101
auf Bestellung 6874 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.43 EUR |
| 10+ | 10.54 EUR |
| 100+ | 8.33 EUR |
| NVBLS1D1N08H |
|
Hersteller: ON Semiconductor
auf Bestellung 438 Stücke:
Lieferzeit 21-28 Tag (e)