NTMFD030N06CT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.86 EUR |
| 3000+ | 0.79 EUR |
| 4500+ | 0.76 EUR |
| 7500+ | 0.71 EUR |
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Technische Details NTMFD030N06CT1G onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 23W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V, Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 13µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Part Status: Active.
Weitere Produktangebote NTMFD030N06CT1G nach Preis ab 0.82 EUR bis 2.95 EUR
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NTMFD030N06CT1G | onsemi |
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO |
auf Bestellung 1100 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFD030N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 7A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Part Status: Active |
auf Bestellung 11845 Stücke: Lieferzeit 10-14 Tag (e) |
|
| NTMFD030N06CT1G |
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Hersteller: onsemi
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.95 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.92 EUR |
| 1500+ | 0.82 EUR |
| NTMFD030N06CT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
auf Bestellung 11845 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.95 EUR |
| 12+ | 1.87 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |