Produkte > ONSEMI > NTMFD030N06CT1G
NTMFD030N06CT1G

NTMFD030N06CT1G onsemi

ntmfd030n06c-d.pdf
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
auf Bestellung 10500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.72 EUR
3000+0.66 EUR
4500+0.64 EUR
7500+0.6 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details NTMFD030N06CT1G onsemi

Description: MOSFET 2N-CH 60V 7A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 23W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V, Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 13µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Part Status: Active.

Weitere Produktangebote NTMFD030N06CT1G nach Preis ab 0.69 EUR bis 2.48 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NTMFD030N06CT1G NTMFD030N06CT1G onsemi ntmfd030n06c-d.pdf MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
2+2.48 EUR
10+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.77 EUR
1500+0.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTMFD030N06CT1G NTMFD030N06CT1G onsemi ntmfd030n06c-d.pdf Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
auf Bestellung 11845 Stücke:
Lieferzeit 10-14 Tag (e)
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
NTMFD030N06CT1G ntmfd030n06c-d.pdf
NTMFD030N06CT1G
Hersteller: onsemi
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
auf Bestellung 1100 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+2.48 EUR
10+1.57 EUR
100+1.05 EUR
500+0.83 EUR
1000+0.77 EUR
1500+0.69 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
NTMFD030N06CT1G ntmfd030n06c-d.pdf
NTMFD030N06CT1G
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Part Status: Active
auf Bestellung 11845 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.05 EUR
500+0.83 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH