NVMFWD030N06CT1G onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
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Technische Details NVMFWD030N06CT1G onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 3.2W (Ta), 23W (Tc), Drain to Source Voltage (Vdss): 60V, Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc), Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V, Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V, Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V, Vgs(th) (Max) @ Id: 4V @ 13µA, Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual), Grade: Automotive, Part Status: Active, Qualification: AEC-Q101.
Weitere Produktangebote NVMFWD030N06CT1G
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde |
|---|---|---|---|---|---|
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NVMFWD030N06CT1G | onsemi |
Description: MOSFET 2N-CH 60V 7A 8DFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 3.2W (Ta), 23W (Tc) Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc) Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V Vgs(th) (Max) @ Id: 4V @ 13µA Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual) Grade: Automotive Part Status: Active Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
NVMFWD030N06CT1G | onsemi |
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO |
Produkt ist nicht verfügbar |
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 |
NVMFWD030N06CT1G | ONSEMI |
Category: Multi channel transistors Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8 Type of transistor: N-MOSFET x2 Polarisation: unipolar Drain-source voltage: 60V Drain current: 19A Pulsed drain current: 63A Power dissipation: 11W Case: DFN8 Gate-source voltage: ±20V On-state resistance: 29.7mΩ Mounting: SMD Gate charge: 4.7nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| NVMFWD030N06CT1G |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Description: MOSFET 2N-CH 60V 7A 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 3.2W (Ta), 23W (Tc)
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 19A (Tc)
Input Capacitance (Ciss) (Max) @ Vds: 255pF @ 30V
Rds On (Max) @ Id, Vgs: 29.7mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 4.7nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 13µA
Supplier Device Package: 8-DFN (5x6) Dual Flag (SO8FL-Dual)
Grade: Automotive
Part Status: Active
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWD030N06CT1G |
|
Hersteller: onsemi
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
MOSFETs T6 60V SG HIGHER RDS-ON PORTFOLIO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NVMFWD030N06CT1G |
|
Hersteller: ONSEMI
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Category: Multi channel transistors
Description: Transistor: N-MOSFET x2; unipolar; 60V; 19A; Idm: 63A; 11W; DFN8
Type of transistor: N-MOSFET x2
Polarisation: unipolar
Drain-source voltage: 60V
Drain current: 19A
Pulsed drain current: 63A
Power dissipation: 11W
Case: DFN8
Gate-source voltage: ±20V
On-state resistance: 29.7mΩ
Mounting: SMD
Gate charge: 4.7nC
Kind of package: reel; tape
Kind of channel: enhancement
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH