FDP030N06B-F102 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 81+ | 2.21 EUR |
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Technische Details FDP030N06B-F102 ON Semiconductor
Description: MOSFET N-CH 60V 120A TO220-3, Packaging: Tube, Package / Case: TO-220-3, Mounting Type: Through Hole, Operating Temperature: -55°C ~ 175°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V, Power Dissipation (Max): 205W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: TO-220-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V.
Weitere Produktangebote FDP030N06B-F102 nach Preis ab 2.23 EUR bis 6.76 EUR
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FDP030N06B-F102 | ON Semiconductor |
 Trans MOSFET N-CH Si 60V 195A 3-Pin(3+Tab) TO-220AB Tube |
auf Bestellung 48500 Stücke: Lieferzeit 14-21 Tag (e) |
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FDP030N06B-F102 | onsemi |
Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V |
auf Bestellung 748 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP030N06B-F102 | onsemi |
MOSFETs N-Channel PowerTrench MOSFET 60V, 195A, 3.1mO |
auf Bestellung 2905 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDP030N06B-F102 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 60V 195A 3-Pin(3+Tab) TO-220AB Tube
Trans MOSFET N-CH Si 60V 195A 3-Pin(3+Tab) TO-220AB Tube
auf Bestellung 48500 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 81+ | 2.23 EUR |
| FDP030N06B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
auf Bestellung 748 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.07 EUR |
| 10+ | 3.96 EUR |
| 50+ | 3.05 EUR |
| 100+ | 2.76 EUR |
| 500+ | 2.24 EUR |
| FDP030N06B-F102 |
|
Hersteller: onsemi
MOSFETs N-Channel PowerTrench MOSFET 60V, 195A, 3.1mO
MOSFETs N-Channel PowerTrench MOSFET 60V, 195A, 3.1mO
auf Bestellung 2905 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 6.76 EUR |
| 10+ | 4.41 EUR |
| 100+ | 3.09 EUR |
| 500+ | 2.59 EUR |