Technische Details MMBFJ110 ON Semiconductor
Description: JFET N-CH 25V SOT23-3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), FET Type: N-Channel, Voltage - Breakdown (V(BR)GSS): 25 V, Supplier Device Package: SOT-23-3, Part Status: Active, Power - Max: 460 mW, Resistance - RDS(On): 18 Ohms, Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA, Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V.
Weitere Produktangebote MMBFJ110
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
|---|---|---|---|---|---|
 |
MMBFJ110 | Hersteller : ON Semiconductor |
 Trans JFET N-CH 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|
 |
MMBFJ110 | Hersteller : ON Semiconductor |
Trans JFET N-CH 3-Pin SOT-23 T/R |
Produkt ist nicht verfügbar |
|
 |
MMBFJ110 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 0.46W; SOT23; 10mA Type of transistor: N-JFET Polarisation: unipolar Power dissipation: 0.46W Case: SOT23 Gate-source voltage: -25V On-state resistance: 18Ω Mounting: SMD Kind of package: reel; tape Gate current: 10mA Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
|
 |
MMBFJ110 | Hersteller : onsemi |
Description: JFET N-CH 25V SOT23-3 Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 460 mW Resistance - RDS(On): 18 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V |
Produkt ist nicht verfügbar |
|
|
|
MMBFJ110 | Hersteller : onsemi |
Description: JFET N-CH 25V SOT23-3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Voltage - Breakdown (V(BR)GSS): 25 V Supplier Device Package: SOT-23-3 Part Status: Active Power - Max: 460 mW Resistance - RDS(On): 18 Ohms Voltage - Cutoff (VGS off) @ Id: 4 V @ 10 nA Current - Drain (Idss) @ Vds (Vgs=0): 10 mA @ 15 V |
Produkt ist nicht verfügbar |
|
 |
MMBFJ110 | Hersteller : onsemi / Fairchild |
JFET N-CH FET/SSOT-23 |
Produkt ist nicht verfügbar |
|
|
|
MMBFJ110 | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-JFET; unipolar; 0.46W; SOT23; 10mA Type of transistor: N-JFET Polarisation: unipolar Power dissipation: 0.46W Case: SOT23 Gate-source voltage: -25V On-state resistance: 18Ω Mounting: SMD Kind of package: reel; tape Gate current: 10mA |
Produkt ist nicht verfügbar |