FFSB2065B onsemi
Hersteller: onsemi
Description: DIODE SIL CARB 650V 22.8A TO263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
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Technische Details FFSB2065B onsemi
Description: DIODE SIL CARB 650V 22.8A TO263, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Speed: Zero Recovery Time > 500mA (Io), Reverse Recovery Time (trr): 0 ns, Technology: SiC (Silicon Carbide) Schottky, Capacitance @ Vr, F: 866pF @ 1V, 100kHz, Current - Average Rectified (Io): 22.8A, Supplier Device Package: TO-263 (D2Pak), Operating Temperature - Junction: -55°C ~ 175°C, Voltage - DC Reverse (Vr) (Max): 650 V, Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A, Current - Reverse Leakage @ Vr: 40 µA @ 650 V.
Weitere Produktangebote FFSB2065B nach Preis ab 3.2 EUR bis 7.57 EUR
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FFSB2065B | onsemi |
SiC Schottky Diodes 650V 20A SIC SBD GEN1.5 |
auf Bestellung 511 Stücke: Lieferzeit 10-14 Tag (e) |
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FFSB2065B | onsemi |
Description: DIODE SIL CARB 650V 22.8A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Zero Recovery Time > 500mA (Io) Reverse Recovery Time (trr): 0 ns Technology: SiC (Silicon Carbide) Schottky Capacitance @ Vr, F: 866pF @ 1V, 100kHz Current - Average Rectified (Io): 22.8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 650 V Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A Current - Reverse Leakage @ Vr: 40 µA @ 650 V |
auf Bestellung 1498 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FFSB2065B |
|
Hersteller: onsemi
SiC Schottky Diodes 650V 20A SIC SBD GEN1.5
SiC Schottky Diodes 650V 20A SIC SBD GEN1.5
auf Bestellung 511 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1+ | 7.57 EUR |
| 10+ | 5.03 EUR |
| 100+ | 3.57 EUR |
| 500+ | 3.2 EUR |
| FFSB2065B |
|
Hersteller: onsemi
Description: DIODE SIL CARB 650V 22.8A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
Description: DIODE SIL CARB 650V 22.8A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Zero Recovery Time > 500mA (Io)
Reverse Recovery Time (trr): 0 ns
Technology: SiC (Silicon Carbide) Schottky
Capacitance @ Vr, F: 866pF @ 1V, 100kHz
Current - Average Rectified (Io): 22.8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 650 V
Voltage - Forward (Vf) (Max) @ If: 1.7 V @ 20 A
Current - Reverse Leakage @ Vr: 40 µA @ 650 V
auf Bestellung 1498 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.57 EUR |
| 10+ | 5.03 EUR |
| 100+ | 3.58 EUR |