FDB047N10 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
| Anzahl | Preis |
|---|---|
| 800+ | 2.93 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDB047N10 onsemi
Description: MOSFET N-CH 100V 120A D2PAK, Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4.5V @ 250µA, Power Dissipation (Max): 375W (Tc), Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V, Current - Continuous Drain (Id) @ 25°C: 120A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDB047N10 nach Preis ab 3.03 EUR bis 7.36 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
||||||
|---|---|---|---|---|---|---|---|---|---|---|---|
 |
FDB047N10 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 770 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
|
|
FDB047N10 | onsemi |
Description: MOSFET N-CH 100V 120A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 375W (Tc) Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1990 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
|
|
FDB047N10 | ON Semiconductor |
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R |
auf Bestellung 790 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||
 |
FDB047N10 | onsemi |
MOSFETs 100V N-Channel PowerTrench |
auf Bestellung 4027 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||
| FDB047N10 | FSC |
TO263 10+ |
auf Bestellung 50 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB047N10 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 770 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 41+ | 3.57 EUR |
| 100+ | 3.23 EUR |
| 250+ | 3.03 EUR |
| FDB047N10 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 120A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 15265 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 210 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 375W (Tc)
Rds On (Max) @ Id, Vgs: 4.7mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1990 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 4.36 EUR |
| 100+ | 3.6 EUR |
| FDB047N10 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R
Trans MOSFET N-CH Si 100V 164A 3-Pin(2+Tab) D2PAK T/R
auf Bestellung 790 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 84+ | 6.52 EUR |
| 100+ | 6.11 EUR |
| 500+ | 5.66 EUR |
| FDB047N10 |
|
Hersteller: onsemi
MOSFETs 100V N-Channel PowerTrench
MOSFETs 100V N-Channel PowerTrench
auf Bestellung 4027 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 1+ | 7.36 EUR |
| 10+ | 4.98 EUR |
| 100+ | 3.54 EUR |
| FDB047N10 |
|
Hersteller: FSC
TO263 10+
TO263 10+
auf Bestellung 50 Stücke:
Lieferzeit 21-28 Tag (e)Im Einkaufswagen Stück im Wert von UAH