Produkte > ON SEMICONDUCTOR > FDMS86250
FDMS86250

FDMS86250 ON Semiconductor

fdms86250-d.pdf
Hersteller: ON Semiconductor
Trans MOSFET N-CH 150V 6.7A 8-Pin PQFN EP T/R
auf Bestellung 47447 Stücke:
Lieferzeit 14-21 Tag (e)
Anzahl Preis
154+0.94 EUR
Mindestbestellmenge: 154
Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FDMS86250 ON Semiconductor

Description: MOSFET N-CH 150V 6.7A/20A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 20A (Tc), Rds On (Max) @ Id, Vgs: 25mOhm @ 6.7A, 10V, Power Dissipation (Max): 2.5W (Ta), 96W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 150 V, Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 75 V.

Weitere Produktangebote FDMS86250 nach Preis ab 1.7 EUR bis 5.65 EUR

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FDMS86250 FDMS86250 Hersteller : onsemi fdms86250-d.pdf Description: MOSFET N-CH 150V 6.7A/20A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 75 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.7 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86250 FDMS86250 Hersteller : onsemi / Fairchild fdms86250-d.pdf MOSFETs 150V N-Channel PowerTrench MOSFET
auf Bestellung 8098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+4.61 EUR
10+3.52 EUR
100+2.52 EUR
250+2.43 EUR
500+2.18 EUR
1000+2.01 EUR
3000+1.87 EUR
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86250 FDMS86250 Hersteller : onsemi fdms86250-d.pdf Description: MOSFET N-CH 150V 6.7A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 75 V
auf Bestellung 6444 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.65 EUR
10+3.69 EUR
100+2.57 EUR
500+2.1 EUR
1000+2.09 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86250 Hersteller : ON Semiconductor fdms86250-d.pdf
auf Bestellung 3000 Stücke:
Lieferzeit 21-28 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86250 Hersteller : ONSEMI fdms86250-d.pdf Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 150V; 30A; Idm: 100A; 96W; Power56
Case: Power56
Kind of channel: enhancement
Mounting: SMD
Type of transistor: N-MOSFET
Kind of package: reel; tape
Drain-source voltage: 150V
Pulsed drain current: 100A
Drain current: 30A
Gate charge: 25nC
On-state resistance: 25mΩ
Power dissipation: 96W
Gate-source voltage: ±20V
Polarisation: unipolar
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH