auf Bestellung 6400 Stücke:
Lieferzeit 1270-1274 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1+ | 13.96 EUR |
| 10+ | 11.99 EUR |
| 100+ | 9.98 EUR |
| 500+ | 9.91 EUR |
| 800+ | 7.92 EUR |
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Technische Details NTB082N65S3F onsemi
Description: MOSFET N-CH 650V 40A D2PAK, Packaging: Tape & Reel (TR), Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 40A (Tc), Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V, Power Dissipation (Max): 313W (Tc), Vgs(th) (Max) @ Id: 5V @ 4mA, Supplier Device Package: D²PAK (TO-263), Part Status: Not For New Designs, Drive Voltage (Max Rds On, Min Rds On): 10V, Vgs (Max): ±30V, Drain to Source Voltage (Vdss): 650 V, Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V.
Weitere Produktangebote NTB082N65S3F
| Foto | Bezeichnung | Hersteller | Beschreibung |
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NTB082N65S3F | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH 650V 40A 3-Pin(2+Tab) D2PAK T/R |
Produkt ist nicht verfügbar |
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NTB082N65S3F | Hersteller : onsemi |
Description: MOSFET N-CH 650V 40A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: D²PAK (TO-263) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V |
Produkt ist nicht verfügbar |
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NTB082N65S3F | Hersteller : onsemi |
Description: MOSFET N-CH 650V 40A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 40A (Tc) Rds On (Max) @ Id, Vgs: 82mOhm @ 20A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 4mA Supplier Device Package: D²PAK (TO-263) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 81 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3410 pF @ 400 V |
Produkt ist nicht verfügbar |