NTJS3157NT1G onsemi
Hersteller: onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
| Anzahl | Preis |
|---|---|
| 3000+ | 0.19 EUR |
| 6000+ | 0.18 EUR |
| 9000+ | 0.16 EUR |
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Technische Details NTJS3157NT1G onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6, Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V, Drain to Source Voltage (Vdss): 20 V, Vgs (Max): ±8V, Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V, Part Status: Active, Supplier Device Package: SC-88/SC70-6/SOT-363, Vgs(th) (Max) @ Id: 1V @ 250µA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V, Package / Case: 6-TSSOP, SC-88, SOT-363, Packaging: Tape & Reel (TR), Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount.
Weitere Produktangebote NTJS3157NT1G nach Preis ab 0.06 EUR bis 0.7 EUR
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NTJS3157NT1G | ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363 Case: SC70-6; SC88; SOT363 Mounting: SMD Kind of package: reel; tape Kind of channel: enhancement Type of transistor: N-MOSFET Polarisation: unipolar On-state resistance: 60mΩ Power dissipation: 1W Drain current: 2.3A Gate-source voltage: ±8V Drain-source voltage: 20V |
auf Bestellung 2000 Stücke: Lieferzeit 14-21 Tag (e) |
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NTJS3157NT1G | onsemi |
MOSFET 20V 4A N-Channel |
auf Bestellung 142274 Stücke: Lieferzeit 10-14 Tag (e) |
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NTJS3157NT1G | onsemi |
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6 Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: SC-88/SC70-6/SOT-363 Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Cut Tape (CT) |
auf Bestellung 13730 Stücke: Lieferzeit 10-14 Tag (e) |
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| NTJS3157NT1G |
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Hersteller: ONSEMI
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
Category: SMD N channel transistors
Description: Transistor: N-MOSFET; unipolar; 20V; 2.3A; 1W; SC70-6,SC88,SOT363
Case: SC70-6; SC88; SOT363
Mounting: SMD
Kind of package: reel; tape
Kind of channel: enhancement
Type of transistor: N-MOSFET
Polarisation: unipolar
On-state resistance: 60mΩ
Power dissipation: 1W
Drain current: 2.3A
Gate-source voltage: ±8V
Drain-source voltage: 20V
auf Bestellung 2000 Stücke:
Lieferzeit 14-21 Tag (e)| Anzahl | Preis |
|---|---|
| 358+ | 0.2 EUR |
| 404+ | 0.18 EUR |
| 439+ | 0.16 EUR |
| 667+ | 0.11 EUR |
| 944+ | 0.076 EUR |
| 1064+ | 0.067 EUR |
| 1500+ | 0.06 EUR |
| NTJS3157NT1G |
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Hersteller: onsemi
MOSFET 20V 4A N-Channel
MOSFET 20V 4A N-Channel
auf Bestellung 142274 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 4+ | 0.7 EUR |
| 10+ | 0.56 EUR |
| 100+ | 0.31 EUR |
| 1000+ | 0.21 EUR |
| 3000+ | 0.17 EUR |
| 9000+ | 0.16 EUR |
| NTJS3157NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 20V 3.2A SC88/SC70-6
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 60mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
auf Bestellung 13730 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 25+ | 0.7 EUR |
| 32+ | 0.55 EUR |
| 100+ | 0.33 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.21 EUR |