DTC123EM3T5G ON Semiconductor
auf Bestellung 48000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 8000+ | 0.05 EUR |
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Technische Details DTC123EM3T5G ON Semiconductor
Description: TRANS PREBIAS NPN 50V SOT723, Packaging: Tape & Reel (TR), Package / Case: SOT-723, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Supplier Device Package: SOT-723, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 260 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTC123EM3T5G nach Preis ab 0.06 EUR bis 0.42 EUR
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DTC123EM3T5G | Hersteller : onsemi |
 Description: TRANS PREBIAS NPN 50V SOT723Packaging: Tape & Reel (TR) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123EM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 600mW 3-Pin SOT-723 T/R |
auf Bestellung 32000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 600mW 3-Pin SOT-723 T/R |
auf Bestellung 158573 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 600mW 3-Pin SOT-723 T/R |
auf Bestellung 6985 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EM3T5G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V SOT723 Packaging: Cut Tape (CT) Package / Case: SOT-723 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SOT-723 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 260 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 56000 Stücke: Lieferzeit 10-14 Tag (e) |
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DTC123EM3T5G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 8169 Stücke: Lieferzeit 10-14 Tag (e) |
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| DTC123EM3T5G | Hersteller : ON Semiconductor |
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auf Bestellung 6060 Stücke: Lieferzeit 21-28 Tag (e) |
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| DTC123EM3T5G | Hersteller : ONSEMI |
Description: ONSEMI - DTC123EM3T5G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 128000 Stücke: Lieferzeit 14-21 Tag (e) |
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DTC123EM3T5G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 600mW 3-Pin SOT-723 T/R |
Produkt ist nicht verfügbar |