MJD112RLG ON Semiconductor
auf Bestellung 3600 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 1800+ | 0.55 EUR |
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Technische Details MJD112RLG ON Semiconductor
Description: TRANS NPN DARL 100V 2A DPAK, Packaging: Tape & Reel (TR), Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63, Mounting Type: Surface Mount, Transistor Type: NPN - Darlington, Operating Temperature: -65°C ~ 150°C (TJ), Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A, Current - Collector Cutoff (Max): 20µA, DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V, Frequency - Transition: 25MHz, Supplier Device Package: DPAK, Part Status: Active, Current - Collector (Ic) (Max): 2 A, Voltage - Collector Emitter Breakdown (Max): 100 V, Power - Max: 1.75 W.
Weitere Produktangebote MJD112RLG nach Preis ab 0.6 EUR bis 2.39 EUR
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MJD112RLG | Hersteller : onsemi |
Description: TRANS NPN DARL 100V 2A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Frequency - Transition: 25MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
auf Bestellung 5400 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD112RLG | Hersteller : onsemi |
Darlington Transistors 2A 100V Bipolar Power NPN |
auf Bestellung 11063 Stücke: Lieferzeit 10-14 Tag (e) |
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MJD112RLG | Hersteller : onsemi |
Description: TRANS NPN DARL 100V 2A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Transistor Type: NPN - Darlington Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 3V @ 40mA, 4A Current - Collector Cutoff (Max): 20µA DC Current Gain (hFE) (Min) @ Ic, Vce: 1000 @ 2A, 3V Frequency - Transition: 25MHz Supplier Device Package: DPAK Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 1.75 W |
auf Bestellung 7706 Stücke: Lieferzeit 10-14 Tag (e) |
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auf Bestellung 25000 Stücke: Lieferzeit 21-28 Tag (e) |
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MJD112RLG | Hersteller : ON Semiconductor |
Trans Darlington NPN 100V 2A 1750mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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MJD112RLG | Hersteller : ON Semiconductor |
Trans Darlington NPN 100V 2A 1750mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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MJD112RLG | Hersteller : ON Semiconductor |
Trans Darlington NPN 100V 2A 1750mW 3-Pin(2+Tab) DPAK T/R |
Produkt ist nicht verfügbar |
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| MJD112RLG | Hersteller : ONSEMI |
Category: NPN SMD Darlington transistorsDescription: Transistor: NPN; bipolar; Darlington; 100V; 2A; 1.75W; DPAK Kind of transistor: Darlington Case: DPAK Mounting: SMD Type of transistor: NPN Power dissipation: 1.75W Collector current: 2A Collector-emitter voltage: 100V Polarisation: bipolar Kind of package: reel; tape |
Produkt ist nicht verfügbar |

