DTC123EET1G ON Semiconductor
auf Bestellung 90000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 5682+ | 0.03 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details DTC123EET1G ON Semiconductor
Description: TRANS PREBIAS NPN 50V 0.1A SC75, Packaging: Tape & Reel (TR), Package / Case: SC-75, SOT-416, Mounting Type: Surface Mount, Transistor Type: NPN - Pre-Biased, Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA, Current - Collector Cutoff (Max): 500nA, DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V, Supplier Device Package: SC-75, SOT-416, Part Status: Active, Current - Collector (Ic) (Max): 100 mA, Voltage - Collector Emitter Breakdown (Max): 50 V, Power - Max: 200 mW, Resistor - Base (R1): 2.2 kOhms, Resistor - Emitter Base (R2): 2.2 kOhms, Resistors Included: R1 and R2.
Weitere Produktangebote DTC123EET1G nach Preis ab 0.04 EUR bis 0.30 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis | ||||||||||||||||
|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|---|
 |
DTC123EET1G | Hersteller : onsemi |
 Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 93000 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DTC123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 32888 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
DTC123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 45000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
DTC123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 21000 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
|
|
DTC123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R |
auf Bestellung 13900 Stücke: Lieferzeit 14-21 Tag (e) |
|
||||||||||||||||
 |
DTC123EET1G | Hersteller : onsemi |
Digital Transistors 100mA 50V BRT NPN |
auf Bestellung 8146 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
|
|
DTC123EET1G | Hersteller : onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75 Packaging: Cut Tape (CT) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 8 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 2.2 kOhms Resistor - Emitter Base (R2): 2.2 kOhms Resistors Included: R1 and R2 |
auf Bestellung 96558 Stücke: Lieferzeit 10-14 Tag (e) |
|
||||||||||||||||
| DTC123EET1G | Hersteller : ONSEMI |
Description: ONSEMI - DTC123EET1G - BIPOLAR JUNCTION TRANSISTOR ARRAYS - BJT tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (23-Jan-2024) |
auf Bestellung 24000 Stücke: Lieferzeit 14-21 Tag (e) |
||||||||||||||||||
|
|
DTC123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 0.1A 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |
|||||||||||||||||
 |
DTC123EET1G | Hersteller : ON Semiconductor |
Trans Digital BJT NPN 50V 100mA 300mW 3-Pin SOT-416 T/R |
Produkt ist nicht verfügbar |