FDMC7660S ON Semiconductor
auf Bestellung 5625 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Preis |
|---|---|
| 418+ | 1.31 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.01 EUR |
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Technische Details FDMC7660S ON Semiconductor
Description: MOSFET N-CH 30V 20A/40A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V.
Weitere Produktangebote FDMC7660S nach Preis ab 1.01 EUR bis 3.06 EUR
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FDMC7660S | Hersteller : ON Semiconductor |
 Trans MOSFET N-CH Si 30V 20A 8-Pin PQFN EP T/R |
auf Bestellung 9685 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMC7660S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 20A/40A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V |
auf Bestellung 9 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC7660S | Hersteller : ONSEMI |
Description: ONSEMI - FDMC7660S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9685 Stücke: Lieferzeit 14-21 Tag (e) |
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| FDMC7660S | Hersteller : Fairchild Semiconductor |
Description: POWER FIELD-EFFECT TRANSISTOR, 4 Packaging: Bulk Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V |
auf Bestellung 9685 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMC7660S |
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auf Bestellung 1080 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC7660S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 20A 8-Pin Power 33 T/R |
Produkt ist nicht verfügbar |
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FDMC7660S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 20A 8-Pin PQFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC7660S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 20A/40A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDMC7660S | Hersteller : onsemi / Fairchild |
MOSFETs 30V N-Chan SyncFET PowerTrench |
Produkt ist nicht verfügbar |
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| FDMC7660S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Type of transistor: N-MOSFET Technology: PowerTrench® Polarisation: unipolar Drain-source voltage: 30V Drain current: 40A Pulsed drain current: 200A Power dissipation: 41W Case: Power33 Gate-source voltage: ±20V On-state resistance: 3.1mΩ Mounting: SMD Gate charge: 66nC Kind of package: reel; tape Kind of channel: enhancement |
Produkt ist nicht verfügbar |