auf Bestellung 6192 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 2.36 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.25 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 0.94 EUR |
| 3000+ | 0.92 EUR |
Produktrezensionen
Produktbewertung abgeben
Technische Details FDMC7660S onsemi / Fairchild
Description: MOSFET N-CH 30V 20A/40A POWER33, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc), Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V, Power Dissipation (Max): 2.3W (Ta), 41W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 1mA, Supplier Device Package: Power33, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V.
Weitere Produktangebote FDMC7660S nach Preis ab 0.98 EUR bis 2.39 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
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FDMC7660S | Hersteller : onsemi |
 Description: MOSFET N-CH 30V 20A/40A POWER33Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V |
auf Bestellung 2870 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC7660S | Hersteller : ONSEMI |
Description: ONSEMI - FDMC7660S - MISCELLANEOUS MOSFETS tariffCode: 85412900 productTraceability: No rohsCompliant: Y-EX euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 9685 Stücke: Lieferzeit 14-21 Tag (e) |
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auf Bestellung 1080 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC7660S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 20A 8-Pin Power 33 T/R |
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FDMC7660S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 20A 8-Pin Power 33 T/R |
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FDMC7660S | Hersteller : ON Semiconductor |
Trans MOSFET N-CH Si 30V 20A 8-Pin Power 33 T/R |
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| FDMC7660S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Case: Power33 Mounting: SMD Kind of package: reel; tape Drain current: 40A Polarisation: unipolar Gate charge: 66nC Technology: PowerTrench® Drain-source voltage: 30V Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 200A On-state resistance: 3.1mΩ Power dissipation: 41W Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC7660S | Hersteller : onsemi |
Description: MOSFET N-CH 30V 20A/40A POWER33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V |
Produkt ist nicht verfügbar |
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| FDMC7660S | Hersteller : ONSEMI |
Category: SMD N channel transistors Description: Transistor: N-MOSFET; unipolar; 30V; 40A; Idm: 200A; 41W; Power33 Case: Power33 Mounting: SMD Kind of package: reel; tape Drain current: 40A Polarisation: unipolar Gate charge: 66nC Technology: PowerTrench® Drain-source voltage: 30V Kind of channel: enhancement Gate-source voltage: ±20V Type of transistor: N-MOSFET Pulsed drain current: 200A On-state resistance: 3.1mΩ Power dissipation: 41W |
Produkt ist nicht verfügbar |