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NCP380LSN10AGEVB | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCP380LSNAJAGEVB | onsemi |
![]() Packaging: Box Function: Power Distribution Switch (Load Switch) Type: Power Management Utilized IC / Part: NCP380 Supplied Contents: Board(s) Embedded: No Part Status: Active Contents: Board(s) Secondary Attributes: Thermal Shutdown Circuit |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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NIS6111EVB | onsemi |
![]() Packaging: Box Function: ORing Controller / High Side Type: Power Management Contents: Board(s) Utilized IC / Part: NIS6111 Embedded: No |
Produkt ist nicht verfügbar |
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NV890201MWTXGEVB | onsemi |
![]() Packaging: Box Voltage - Output: 3.3V Voltage - Input: 4.5V ~ 36V Current - Output: 2A Contents: Board(s) Frequency - Switching: 2MHz Regulator Topology: Buck Utilized IC / Part: NV890201 Main Purpose: DC/DC, Step Down Outputs and Type: 1 Non-Isolated Output |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3120SD | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
auf Bestellung 2572 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3120SDV | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.5V Current - Peak Output: 3A Technology: Optical Coupling Current - Output High, Low: 2A, 2A Voltage - Isolation: 5000Vrms Approval Agency: IEC, UL Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 60ns, 60ns Common Mode Transient Immunity (Min): 35kV/µs Propagation Delay tpLH / tpHL (Max): 400ns, 400ns Pulse Width Distortion (Max): 100ns Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 25 mA Voltage - Output Supply: 15V ~ 30V |
auf Bestellung 1197 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM121AR2 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 300% @ 5mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 11019 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM124R2V | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 80mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 100% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 1200% @ 1mA Supplier Device Package: 4-SMD Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 14394 Stücke: Lieferzeit 10-14 Tag (e) |
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HMHA281R2 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.3V (Max) Input Type: DC Current - Output / Channel: 50mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 50% @ 5mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 600% @ 5mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 80V Rise / Fall Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 50 mA |
auf Bestellung 653313 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC205R2VM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 40% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 80% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 1764 Stücke: Lieferzeit 10-14 Tag (e) |
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MOC213R2M | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor with Base Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.15V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 100% @ 10mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SOIC Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Part Status: Active Number of Channels: 1 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 984683 Stücke: Lieferzeit 10-14 Tag (e) |
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MOCD208R2M | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.25V Input Type: DC Current - Output / Channel: 150mA Voltage - Isolation: 2500Vrms Current Transfer Ratio (Min): 40% @ 10mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 125% @ 10mA Supplier Device Package: 8-SOIC Voltage - Output (Max): 70V Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs Rise / Fall Time (Typ): 3.2µs, 4.7µs Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 85077 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD390N15A | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V |
auf Bestellung 9870 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86252 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V |
auf Bestellung 58977 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86520L | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V |
auf Bestellung 6635 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ8403 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
auf Bestellung 35685 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS039N08B | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V |
auf Bestellung 7191 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7650DC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V |
auf Bestellung 11803 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86300 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
auf Bestellung 3547 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86256 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V |
auf Bestellung 859 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN5346S20X | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN5346S30X | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDC8602 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 690mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 7167 Stücke: Lieferzeit 10-14 Tag (e) |
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FQNL2N50BTA | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads) Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 350mA (Tc) Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V Power Dissipation (Max): 1.5W (Tc) Vgs(th) (Max) @ Id: 3.7V @ 250µA Supplier Device Package: TO-92-3 Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V |
Produkt ist nicht verfügbar |
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KSA928AYTA | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Mounting Type: Through Hole Transistor Type: PNP Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V Frequency - Transition: 120MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 2 A Voltage - Collector Emitter Breakdown (Max): 30 V Power - Max: 1 W |
auf Bestellung 3566 Stücke: Lieferzeit 10-14 Tag (e) |
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SSN1N45BTA | onsemi |
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auf Bestellung 1398 Stücke: Lieferzeit 10-14 Tag (e) |
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74ACT08MTCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Logic Type: AND Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4.5V ~ 5.5V Current - Output High, Low: 24mA, 24mA Number of Inputs: 2 Supplier Device Package: 14-TSSOP Input Logic Level - High: 2V Input Logic Level - Low: 0.8V Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF Part Status: Active Number of Circuits: 4 Current - Quiescent (Max): 4 µA |
auf Bestellung 151287 Stücke: Lieferzeit 10-14 Tag (e) |
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74ACT240MTCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Buffer, Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 4 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-TSSOP |
auf Bestellung 13927 Stücke: Lieferzeit 10-14 Tag (e) |
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74LCX573MTCX | onsemi |
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Produkt ist nicht verfügbar |
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74VHC541MTCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 2V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP Part Status: Active |
auf Bestellung 2350 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN6300AMY | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 8V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Open Loop, Over Voltage Voltage - Start Up: 16 V Part Status: Last Time Buy |
auf Bestellung 10044 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8880 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V Power Dissipation (Max): 55W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V |
auf Bestellung 4028 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD8896 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc) Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V Power Dissipation (Max): 80W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V |
auf Bestellung 23910 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC2514SDC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V Power Dissipation (Max): 3W (Ta), 60W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: Dual Cool ™ 33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V |
Produkt ist nicht verfügbar |
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FDMC3020DC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V Power Dissipation (Max): 3W (Ta), 50W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Dual Cool ™ 33 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V |
Produkt ist nicht verfügbar |
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FDMS7698 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V Power Dissipation (Max): 2.5W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V |
auf Bestellung 10119 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS2582 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta) Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V |
auf Bestellung 5466 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86106LZ | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta) Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: SOT-223-4 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V |
auf Bestellung 27124 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB44N10TM | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc) Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V Power Dissipation (Max): 3.75W (Ta), 146W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V |
auf Bestellung 22968 Stücke: Lieferzeit 10-14 Tag (e) |
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FQB7P20TM-F085 | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FST3257MTCX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 4 x 2:1 Type: Multiplexer/Demultiplexer Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 5.5V Independent Circuits: 1 Voltage Supply Source: Single Supply Supplier Device Package: 16-TSSOP Part Status: Obsolete |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HUF75639S3ST | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 56A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V Power Dissipation (Max): 200W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V |
auf Bestellung 1480 Stücke: Lieferzeit 10-14 Tag (e) |
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SG6901ASZ | onsemi |
Description: IC PFC CTR AV CURR 65KHZ 20SOIC Packaging: Cut Tape (CT) Package / Case: 20-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -30°C ~ 85°C Voltage - Supply: 12V ~ 20V Frequency - Switching: 65kHz Mode: Average Current Supplier Device Package: 20-SOIC Current - Startup: 10 µA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN5622SX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Number of Outputs: 2 Type: Linear Operating Temperature: -40°C ~ 85°C (TA) Applications: Backlight Current - Output / Channel: 30mA Internal Switch(s): Yes Supplier Device Package: SuperSOT™-6 Dimming: Single-Wire Voltage - Supply (Min): 2.7V Voltage - Supply (Max): 5.5V Part Status: Active |
auf Bestellung 43285 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD390N15A | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Tc) Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V Power Dissipation (Max): 63W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86252 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc) Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V Power Dissipation (Max): 3.1W (Ta), 89W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V |
auf Bestellung 55000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86520L | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6705B | onsemi |
Description: IC HALF BRIDGE DRIVER 38A 40PQFN Packaging: Tape & Reel (TR) Features: Bootstrap Circuit, Status Flag Package / Case: 40-PowerTFQFN Mounting Type: Surface Mount Interface: PWM Operating Temperature: -40°C ~ 150°C (TJ) Output Configuration: Half Bridge Voltage - Supply: 4.5V ~ 5.5V Rds On (Typ): 1Ohm LS, 1Ohm HS Applications: Synchronous Buck Converters Current - Output / Channel: 38A Technology: DrMOS Voltage - Load: 3V ~ 24V Supplier Device Package: 40-PQFN (6x6) Fault Protection: Over Temperature, Shoot-Through, UVLO Load Type: Inductive Part Status: Last Time Buy |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ8403 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.1A Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
auf Bestellung 33000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS039N08B | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7650DC | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V Power Dissipation (Max): 3.3W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86300 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86256 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc) Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V Power Dissipation (Max): 2.3W (Ta), 10W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN5346S20X | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FAN5346S30X | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDC8602 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 690mW Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SuperSOT™-6 Part Status: Active |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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QSE258 | onsemi |
![]() Packaging: Bulk Package / Case: Radial, 3 Lead, Side View Wavelength: 880nm Output Type: Open Collector Type: Photo Detector, Logic Output Operating Temperature: -40°C ~ 85°C (TA) Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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CAT4201AGEVB | onsemi |
![]() Packaging: Bulk Features: Dimmable Voltage - Input: 12V Current - Output / Channel: 350mA Utilized IC / Part: CAT4201 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 1 Stücke: Lieferzeit 10-14 Tag (e) |
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MC34063LBGEVB | onsemi |
Description: EVAL BOARD FOR MC34063 Packaging: Bulk Voltage - Output: 12V Voltage - Input: 3V ~ 40V Current - Output: 1.5A Regulator Topology: Boost Board Type: Fully Populated Utilized IC / Part: MC34063 Supplied Contents: Board(s) Main Purpose: DC/DC, Step Up Outputs and Type: 1 Non-Isolated Output Part Status: Obsolete Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NCL30105GEVB | onsemi |
![]() Packaging: Box Voltage - Output: 60V Current - Output / Channel: 350mA Utilized IC / Part: NCL30105 Supplied Contents: Board(s) Outputs and Type: 1, Non-Isolated Part Status: Active |
auf Bestellung 2 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP380LSN10AGEVB |
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Hersteller: onsemi
Description: BOARD EVAL NCP380LSN10 LOAD SW
Description: BOARD EVAL NCP380LSN10 LOAD SW
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCP380LSNAJAGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
Description: EVAL BOARD FOR NCP380
Packaging: Box
Function: Power Distribution Switch (Load Switch)
Type: Power Management
Utilized IC / Part: NCP380
Supplied Contents: Board(s)
Embedded: No
Part Status: Active
Contents: Board(s)
Secondary Attributes: Thermal Shutdown Circuit
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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1+ | 83.62 EUR |
NIS6111EVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NIS6111
Packaging: Box
Function: ORing Controller / High Side
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NIS6111
Embedded: No
Description: EVAL BOARD FOR NIS6111
Packaging: Box
Function: ORing Controller / High Side
Type: Power Management
Contents: Board(s)
Utilized IC / Part: NIS6111
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NV890201MWTXGEVB |
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Hersteller: onsemi
Description: EVAL BOARD FOR NV890201
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4.5V ~ 36V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 2MHz
Regulator Topology: Buck
Utilized IC / Part: NV890201
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
Description: EVAL BOARD FOR NV890201
Packaging: Box
Voltage - Output: 3.3V
Voltage - Input: 4.5V ~ 36V
Current - Output: 2A
Contents: Board(s)
Frequency - Switching: 2MHz
Regulator Topology: Buck
Utilized IC / Part: NV890201
Main Purpose: DC/DC, Step Down
Outputs and Type: 1 Non-Isolated Output
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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1+ | 172.6 EUR |
FOD3120SD |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 2572 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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5+ | 3.78 EUR |
10+ | 2.73 EUR |
100+ | 2.1 EUR |
500+ | 1.83 EUR |
FOD3120SDV |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: IEC, UL
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 1197 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
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6+ | 3.19 EUR |
10+ | 2.29 EUR |
100+ | 1.75 EUR |
500+ | 1.51 EUR |
FODM121AR2 |
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Hersteller: onsemi
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV 1CH TRANS 4-SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 300% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 11019 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
18+ | 0.99 EUR |
26+ | 0.68 EUR |
100+ | 0.5 EUR |
500+ | 0.41 EUR |
1000+ | 0.38 EUR |
FODM124R2V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 1200% @ 1mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 14394 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 1.27 EUR |
24+ | 0.75 EUR |
100+ | 0.5 EUR |
500+ | 0.4 EUR |
1000+ | 0.37 EUR |
HMHA281R2 |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SOIC
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
Description: OPTOISO 3.75KV TRANSISTOR 4SOIC
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 653313 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.51 EUR |
20+ | 0.92 EUR |
100+ | 0.61 EUR |
500+ | 0.5 EUR |
1000+ | 0.46 EUR |
MOC205R2VM |
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Hersteller: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 80% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 80% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 1764 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.46 EUR |
20+ | 0.88 EUR |
100+ | 0.59 EUR |
500+ | 0.47 EUR |
1000+ | 0.44 EUR |
MOC213R2M |
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Hersteller: onsemi
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV TRANS W/BASE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.15V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 100% @ 10mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 984683 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.36 EUR |
22+ | 0.81 EUR |
100+ | 0.53 EUR |
500+ | 0.43 EUR |
1000+ | 0.39 EUR |
MOCD208R2M |
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Hersteller: onsemi
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISO 2.5KV 2CH TRANS 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 2500Vrms
Current Transfer Ratio (Min): 40% @ 10mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 125% @ 10mA
Supplier Device Package: 8-SOIC
Voltage - Output (Max): 70V
Turn On / Turn Off Time (Typ): 7.5µs, 5.7µs
Rise / Fall Time (Typ): 3.2µs, 4.7µs
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 85077 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.46 EUR |
18+ | 1.02 EUR |
100+ | 0.75 EUR |
500+ | 0.63 EUR |
1000+ | 0.59 EUR |
FDD390N15A |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
auf Bestellung 9870 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.2 EUR |
12+ | 1.54 EUR |
100+ | 1.09 EUR |
500+ | 0.93 EUR |
1000+ | 0.92 EUR |
FDD86252 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
auf Bestellung 58977 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.57 EUR |
10+ | 1.9 EUR |
100+ | 1.22 EUR |
500+ | 1.1 EUR |
1000+ | 1.05 EUR |
FDMC86520L |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
auf Bestellung 6635 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.77 EUR |
10+ | 2.89 EUR |
100+ | 2.11 EUR |
500+ | 1.81 EUR |
1000+ | 1.7 EUR |
FDMQ8403 |
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Hersteller: onsemi
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 35685 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.51 EUR |
10+ | 4.01 EUR |
100+ | 3.09 EUR |
500+ | 2.85 EUR |
FDMS039N08B |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
auf Bestellung 7191 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5+ | 4.28 EUR |
10+ | 2.96 EUR |
100+ | 2.24 EUR |
500+ | 1.88 EUR |
1000+ | 1.74 EUR |
FDMS7650DC |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
auf Bestellung 11803 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.44 EUR |
10+ | 3.62 EUR |
100+ | 2.06 EUR |
FDMS86300 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
auf Bestellung 3547 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.84 EUR |
10+ | 3.15 EUR |
100+ | 2.18 EUR |
500+ | 1.85 EUR |
FDT86256 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
auf Bestellung 859 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.92 EUR |
10+ | 1.86 EUR |
100+ | 1.26 EUR |
500+ | 1 EUR |
FAN5346S20X |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FAN5346S30X |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
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FDC8602 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 7167 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.13 EUR |
10+ | 2 EUR |
100+ | 1.36 EUR |
500+ | 1.08 EUR |
1000+ | 1.03 EUR |
FQNL2N50BTA |
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Hersteller: onsemi
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Description: MOSFET N-CH 500V 350MA TO92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 350mA (Tc)
Rds On (Max) @ Id, Vgs: 5.3Ohm @ 175mA, 10V
Power Dissipation (Max): 1.5W (Tc)
Vgs(th) (Max) @ Id: 3.7V @ 250µA
Supplier Device Package: TO-92-3
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 230 pF @ 25 V
Produkt ist nicht verfügbar
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KSA928AYTA |
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Hersteller: onsemi
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Description: TRANS PNP 30V 2A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 2V @ 30mA, 1.5A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 500mA, 2V
Frequency - Transition: 120MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
auf Bestellung 3566 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
21+ | 0.84 EUR |
34+ | 0.52 EUR |
100+ | 0.33 EUR |
500+ | 0.25 EUR |
1000+ | 0.23 EUR |
SSN1N45BTA |
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Hersteller: onsemi
Description: MOSFET N-CH 450V 500MA TO92-3
Description: MOSFET N-CH 450V 500MA TO92-3
auf Bestellung 1398 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
11+ | 1.6 EUR |
13+ | 1.41 EUR |
100+ | 1.08 EUR |
500+ | 0.86 EUR |
1000+ | 0.69 EUR |
74ACT08MTCX |
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Hersteller: onsemi
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
Description: IC GATE AND 4CH 2-INP 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 2
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 2V
Input Logic Level - Low: 0.8V
Max Propagation Delay @ V, Max CL: 9ns @ 5V, 50pF
Part Status: Active
Number of Circuits: 4
Current - Quiescent (Max): 4 µA
auf Bestellung 151287 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
19+ | 0.97 EUR |
26+ | 0.69 EUR |
29+ | 0.62 EUR |
100+ | 0.54 EUR |
250+ | 0.51 EUR |
500+ | 0.48 EUR |
1000+ | 0.47 EUR |
74ACT240MTCX |
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Hersteller: onsemi
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
Description: IC BUFF INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Buffer, Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 4
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-TSSOP
auf Bestellung 13927 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
14+ | 1.34 EUR |
19+ | 0.95 EUR |
25+ | 0.86 EUR |
100+ | 0.75 EUR |
250+ | 0.7 EUR |
500+ | 0.67 EUR |
74LCX573MTCX |
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Hersteller: onsemi
Description: IC LATCH OCT LV 5V I/O 20TSSOP
Description: IC LATCH OCT LV 5V I/O 20TSSOP
Produkt ist nicht verfügbar
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74VHC541MTCX |
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Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 2350 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.38 EUR |
13+ | 1.46 EUR |
25+ | 1.22 EUR |
100+ | 0.95 EUR |
250+ | 0.81 EUR |
500+ | 0.73 EUR |
1000+ | 0.66 EUR |
FAN6300AMY |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 8V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Voltage
Voltage - Start Up: 16 V
Part Status: Last Time Buy
auf Bestellung 10044 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
7+ | 2.71 EUR |
11+ | 1.67 EUR |
25+ | 1.4 EUR |
100+ | 1.1 EUR |
250+ | 0.95 EUR |
500+ | 0.85 EUR |
1000+ | 0.78 EUR |
FDD8880 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
Description: MOSFET N-CH 30V 13A/58A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 58A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 35A, 10V
Power Dissipation (Max): 55W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1260 pF @ 15 V
auf Bestellung 4028 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.15 EUR |
16+ | 1.16 EUR |
100+ | 0.8 EUR |
500+ | 0.69 EUR |
1000+ | 0.63 EUR |
FDD8896 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
Description: MOSFET N-CH 30V 17A/94A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 94A (Tc)
Rds On (Max) @ Id, Vgs: 5.7mOhm @ 35A, 10V
Power Dissipation (Max): 80W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
auf Bestellung 23910 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.32 EUR |
12+ | 1.48 EUR |
100+ | 1.01 EUR |
500+ | 0.8 EUR |
1000+ | 0.73 EUR |
FDMC2514SDC |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Description: MOSFET N-CH 25V 24A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 22.5A, 10V
Power Dissipation (Max): 3W (Ta), 60W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2705 pF @ 13 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMC3020DC |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Description: MOSFET N-CH 30V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.25mOhm @ 12A, 10V
Power Dissipation (Max): 3W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1385 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS7698 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
Description: MOSFET N-CH 30V 13.5A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 10mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 24 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1605 pF @ 15 V
auf Bestellung 10119 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
15+ | 1.21 EUR |
17+ | 1.06 EUR |
100+ | 0.73 EUR |
500+ | 0.61 EUR |
1000+ | 0.52 EUR |
FDS2582 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
Description: MOSFET N-CH 150V 4.1A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.1A (Ta)
Rds On (Max) @ Id, Vgs: 66mOhm @ 4.1A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 25 V
auf Bestellung 5466 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.04 EUR |
10+ | 1.94 EUR |
100+ | 1.31 EUR |
500+ | 1.04 EUR |
1000+ | 0.95 EUR |
FDT86106LZ |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
Description: MOSFET N-CH 100V 3.2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.2A (Ta)
Rds On (Max) @ Id, Vgs: 108mOhm @ 3.2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 315 pF @ 50 V
auf Bestellung 27124 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.43 EUR |
11+ | 1.74 EUR |
100+ | 1.2 EUR |
500+ | 1.03 EUR |
1000+ | 0.97 EUR |
FQB44N10TM |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
Description: MOSFET N-CH 100V 43.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 43.5A (Tc)
Rds On (Max) @ Id, Vgs: 39mOhm @ 21.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 146W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1800 pF @ 25 V
auf Bestellung 22968 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 4.79 EUR |
10+ | 3.11 EUR |
100+ | 2.15 EUR |
FQB7P20TM-F085 |
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Hersteller: onsemi
Description: MOSFET P-CH 200V 7.3A D2PAK
Description: MOSFET P-CH 200V 7.3A D2PAK
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FST3257MTCX |
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Hersteller: onsemi
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
Description: IC MUX/DEMUX 4 X 2:1 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 4 x 2:1
Type: Multiplexer/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 5.5V
Independent Circuits: 1
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Im Einkaufswagen Stück im Wert von UAH
HUF75639S3ST |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
Description: MOSFET N-CH 100V 56A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 56A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 56A, 10V
Power Dissipation (Max): 200W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 130 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 2000 pF @ 25 V
auf Bestellung 1480 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.1 EUR |
10+ | 3.54 EUR |
100+ | 2.47 EUR |
SG6901ASZ |
Hersteller: onsemi
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 12V ~ 20V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Current - Startup: 10 µA
Description: IC PFC CTR AV CURR 65KHZ 20SOIC
Packaging: Cut Tape (CT)
Package / Case: 20-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -30°C ~ 85°C
Voltage - Supply: 12V ~ 20V
Frequency - Switching: 65kHz
Mode: Average Current
Supplier Device Package: 20-SOIC
Current - Startup: 10 µA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FAN5622SX |
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Hersteller: onsemi
Description: IC LED DRV LIN SGL WR 30MA 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 2
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Active
Description: IC LED DRV LIN SGL WR 30MA 6SSOT
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Number of Outputs: 2
Type: Linear
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Backlight
Current - Output / Channel: 30mA
Internal Switch(s): Yes
Supplier Device Package: SuperSOT™-6
Dimming: Single-Wire
Voltage - Supply (Min): 2.7V
Voltage - Supply (Max): 5.5V
Part Status: Active
auf Bestellung 43285 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.15 EUR |
14+ | 1.31 EUR |
25+ | 1.09 EUR |
100+ | 0.84 EUR |
250+ | 0.72 EUR |
500+ | 0.65 EUR |
1000+ | 0.58 EUR |
FDD390N15A |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Description: MOSFET N-CH 150V 26A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Tc)
Rds On (Max) @ Id, Vgs: 40mOhm @ 26A, 10V
Power Dissipation (Max): 63W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.79 EUR |
5000+ | 0.76 EUR |
7500+ | 0.75 EUR |
FDD86252 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
Description: MOSFET N-CH 150V 5A/27A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5A (Ta), 27A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 5A, 10V
Power Dissipation (Max): 3.1W (Ta), 89W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 985 pF @ 75 V
auf Bestellung 55000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2500+ | 0.94 EUR |
FDMC86520L |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
Description: MOSFET N-CH 60V 13.5A/22A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 13.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4550 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.62 EUR |
FDMF6705B |
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 38A
Technology: DrMOS
Voltage - Load: 3V ~ 24V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
Description: IC HALF BRIDGE DRIVER 38A 40PQFN
Packaging: Tape & Reel (TR)
Features: Bootstrap Circuit, Status Flag
Package / Case: 40-PowerTFQFN
Mounting Type: Surface Mount
Interface: PWM
Operating Temperature: -40°C ~ 150°C (TJ)
Output Configuration: Half Bridge
Voltage - Supply: 4.5V ~ 5.5V
Rds On (Typ): 1Ohm LS, 1Ohm HS
Applications: Synchronous Buck Converters
Current - Output / Channel: 38A
Technology: DrMOS
Voltage - Load: 3V ~ 24V
Supplier Device Package: 40-PQFN (6x6)
Fault Protection: Over Temperature, Shoot-Through, UVLO
Load Type: Inductive
Part Status: Last Time Buy
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 2.68 EUR |
FDMQ8403 |
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Hersteller: onsemi
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 4N-CH 100V 3.1A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.1A
Input Capacitance (Ciss) (Max) @ Vds: 215pF @ 15V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 33000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 2.33 EUR |
FDMS039N08B |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
Description: MOSFET N-CH 80V 19.4A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19.4A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7600 pF @ 40 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.65 EUR |
FDMS7650DC |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
Description: MOSFET N-CH 30V 47A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 0.99mOhm @ 36A, 10V
Power Dissipation (Max): 3.3W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 206 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14765 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 3.62 EUR |
FDMS86300 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
Description: MOSFET N-CH 80V 19A/80A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7082 pF @ 40 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.51 EUR |
FDT86256 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Description: MOSFET N-CH 150V 1.2A/3A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.2A (Ta), 3A (Tc)
Rds On (Max) @ Id, Vgs: 845mOhm @ 1.2A, 10V
Power Dissipation (Max): 2.3W (Ta), 10W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 73 pF @ 75 V
Produkt ist nicht verfügbar
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FAN5346S20X |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
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FAN5346S30X |
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Hersteller: onsemi
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Description: IC LED DRVR RGLTR PWM 25MA 6SSOT
Produkt ist nicht verfügbar
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FDC8602 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
Description: MOSFET 2N-CH 100V 1.2A SSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 690mW
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 70pF @ 50V
Rds On (Max) @ Id, Vgs: 350mOhm @ 1.2A, 10V
Gate Charge (Qg) (Max) @ Vgs: 2nC @ 10V
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.88 EUR |
6000+ | 0.84 EUR |
QSE258 |
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Hersteller: onsemi
Description: IC PHOTOSENSOR SIDELOOKER
Packaging: Bulk
Package / Case: Radial, 3 Lead, Side View
Wavelength: 880nm
Output Type: Open Collector
Type: Photo Detector, Logic Output
Operating Temperature: -40°C ~ 85°C (TA)
Part Status: Obsolete
Description: IC PHOTOSENSOR SIDELOOKER
Packaging: Bulk
Package / Case: Radial, 3 Lead, Side View
Wavelength: 880nm
Output Type: Open Collector
Type: Photo Detector, Logic Output
Operating Temperature: -40°C ~ 85°C (TA)
Part Status: Obsolete
Produkt ist nicht verfügbar
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CAT4201AGEVB |
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Hersteller: onsemi
Description: BOARD EVAL CAT4201 LED DRIVER
Packaging: Bulk
Features: Dimmable
Voltage - Input: 12V
Current - Output / Channel: 350mA
Utilized IC / Part: CAT4201
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL CAT4201 LED DRIVER
Packaging: Bulk
Features: Dimmable
Voltage - Input: 12V
Current - Output / Channel: 350mA
Utilized IC / Part: CAT4201
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 1 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 145.73 EUR |
MC34063LBGEVB |
Hersteller: onsemi
Description: EVAL BOARD FOR MC34063
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: MC34063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Description: EVAL BOARD FOR MC34063
Packaging: Bulk
Voltage - Output: 12V
Voltage - Input: 3V ~ 40V
Current - Output: 1.5A
Regulator Topology: Boost
Board Type: Fully Populated
Utilized IC / Part: MC34063
Supplied Contents: Board(s)
Main Purpose: DC/DC, Step Up
Outputs and Type: 1 Non-Isolated Output
Part Status: Obsolete
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NCL30105GEVB |
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Hersteller: onsemi
Description: BOARD EVAL 80V 350 FOR LED DRV
Packaging: Box
Voltage - Output: 60V
Current - Output / Channel: 350mA
Utilized IC / Part: NCL30105
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
Description: BOARD EVAL 80V 350 FOR LED DRV
Packaging: Box
Voltage - Output: 60V
Current - Output / Channel: 350mA
Utilized IC / Part: NCL30105
Supplied Contents: Board(s)
Outputs and Type: 1, Non-Isolated
Part Status: Active
auf Bestellung 2 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 220 EUR |