Foto | Bezeichnung | Hersteller | Beschreibung |
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NC7SZ14L6X | onsemi | Description: IC INVERTER 1CH 1-INP 6MICROPAK |
Produkt ist nicht verfügbar |
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NC7WZ14L6X | onsemi |
Description: IC INVERTER 2CH 2-INP 6MICROPAK Features: Schmitt Trigger Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 6-MicroPak Input Logic Level - High: 1.4V ~ 3.6V Input Logic Level - Low: 0.2V ~ 1.2V Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF Part Status: Obsolete Number of Circuits: 2 Current - Quiescent (Max): 1 µA |
Produkt ist nicht verfügbar |
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FDN308P | onsemi |
Description: MOSFET P-CH 20V 1.5A SUPERSOT3 Packaging: Cut Tape (CT) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta) Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 4.5V Power Dissipation (Max): 500mW (Ta) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SOT-23-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 341 pF @ 10 V |
auf Bestellung 3563 Stücke: Lieferzeit 21-28 Tag (e) |
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FSA1256L8X | onsemi | Description: IC ANALOG SWITCH 8MICROPAK |
auf Bestellung 25874 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7SV74L8X | onsemi |
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK Packaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Complementary Mounting Type: Surface Mount Number of Elements: 1 Function: Set(Preset) and Reset Type: D-Type Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Current - Quiescent (Iq): 900 µA Current - Output High, Low: 24mA, 24mA Trigger Type: Positive Edge Clock Frequency: 200 MHz Input Capacitance: 2 pF Supplier Device Package: 8-MicroPak™ Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF Part Status: Obsolete Number of Bits per Element: 1 |
Produkt ist nicht verfügbar |
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NC7NZ17L8X | onsemi | Description: IC BUF NON-INVERT 5.5V 8MICROPAK |
auf Bestellung 10531 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7WZ86L8X | onsemi |
Description: IC GATE XOR 2CH 2-INP 8MICROPAK Packaging: Cut Tape (CT) Package / Case: 8-UFQFN Mounting Type: Surface Mount Logic Type: XOR (Exclusive OR) Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 5.5V Current - Output High, Low: 32mA, 32mA Number of Inputs: 2 Supplier Device Package: 8-MicroPak™ Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF Number of Circuits: 2 Current - Quiescent (Max): 1 µA |
auf Bestellung 165000 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7SV125L6X | onsemi |
Description: IC BUF NON-INVERT 3.6V 6MICROPAK Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 0.9V ~ 3.6V Number of Bits per Element: 1 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 6-MicroPak Part Status: Obsolete |
auf Bestellung 4085 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7WP32K8X | onsemi |
Description: IC GATE OR 2CH 2-INP US8 Packaging: Cut Tape (CT) Package / Case: 8-VFSOP (0.091", 2.30mm Width) Mounting Type: Surface Mount Logic Type: OR Gate Operating Temperature: -40°C ~ 85°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 2.6mA, 2.6mA Number of Inputs: 2 Supplier Device Package: US8 Input Logic Level - High: 1.6V ~ 2.1V Input Logic Level - Low: 0.7V ~ 0.9V Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF Part Status: Obsolete Number of Circuits: 2 Current - Quiescent (Max): 900 nA |
auf Bestellung 1165 Stücke: Lieferzeit 21-28 Tag (e) |
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FDME1034CZT | onsemi |
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Exposed Pad Mounting Type: Surface Mount Configuration: N and P-Channel Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 600mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: 6-MicroFET (1.6x1.6) |
Produkt ist nicht verfügbar |
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FPF1039UCX | onsemi |
Description: IC PWR SWITCH LOAD MGMT 6WLCSP Features: Slew Rate Controlled Packaging: Cut Tape (CT) Package / Case: 6-UFBGA, WLCSP Mounting Type: Surface Mount Number of Outputs: 1 Interface: On/Off Switch Type: General Purpose Rds On (Typ): 20mOhm Voltage - Load: 1.2V ~ 5.5V Voltage - Supply (Vcc/Vdd): Not Required Current - Output (Max): 3.5A Supplier Device Package: 6-WLCSP (0.96x1.66) Part Status: Last Time Buy |
auf Bestellung 22561 Stücke: Lieferzeit 21-28 Tag (e) |
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74VCX245BQX | onsemi |
Description: IC TXRX NON-INVERT 3.6V 20DQFN Packaging: Cut Tape (CT) Package / Case: 20-WFQFN Exposed Pad Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.4V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 20-DQFN (2.5x4.5) |
auf Bestellung 3017 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7NZ34L8X | onsemi |
Description: IC BUF NON-INVERT 5.5V 8MICROPAK Packaging: Cut Tape (CT) Package / Case: 8-UFQFN Output Type: Push-Pull Mounting Type: Surface Mount Number of Elements: 3 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 5.5V Number of Bits per Element: 1 Current - Output High, Low: 32mA, 32mA Supplier Device Package: 8-MicroPak™ |
Produkt ist nicht verfügbar |
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74LCX04BQX | onsemi |
Description: IC INVERTER 6CH 1-INP 14DQFN Packaging: Cut Tape (CT) Package / Case: 14-VFQFN Exposed Pad Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Current - Output High, Low: 24mA, 24mA Number of Inputs: 1 Supplier Device Package: 14-DQFN (3x2.5) Input Logic Level - High: 1.7V ~ 2V Input Logic Level - Low: 0.7V ~ 0.8V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF Part Status: Active Number of Circuits: 6 Current - Quiescent (Max): 10 µA |
auf Bestellung 74887 Stücke: Lieferzeit 21-28 Tag (e) |
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FDC6310P | onsemi |
Description: MOSFET 2P-CH 20V 2.2A SSOT6 Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Thin, TSOT-23-6 Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 700mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 2.2A Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: SuperSOT™-6 |
auf Bestellung 133945 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7SB3157L6X | onsemi |
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK Packaging: Cut Tape (CT) Package / Case: 6-UFDFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 15Ohm -3db Bandwidth: 250MHz Supplier Device Package: 6-MicroPak Voltage - Supply, Single (V+): 1.65V ~ 5.5V Charge Injection: 7pC Crosstalk: -54dB @ 10MHz Switch Circuit: SPDT Multiplexer/Demultiplexer Circuit: 2:1 Channel-to-Channel Matching (ΔRon): 150mOhm Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns Channel Capacitance (CS(off), CD(off)): 6.5pF Current - Leakage (IS(off)) (Max): 100nA Part Status: Last Time Buy Number of Circuits: 1 |
auf Bestellung 1210 Stücke: Lieferzeit 21-28 Tag (e) |
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FAN4931IP5X | onsemi |
Description: IC OPAMP VFB 1 CIRCUIT SC70-5 Packaging: Cut Tape (CT) Package / Case: 5-TSSOP, SC-70-5, SOT-353 Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: Voltage Feedback Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Supplier Device Package: SC-70-5 Number of Circuits: 1 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
auf Bestellung 98988 Stücke: Lieferzeit 21-28 Tag (e) |
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FAN2558MPX | onsemi |
Description: IC REG LINEAR POS ADJ 180MA 6MLP Packaging: Cut Tape (CT) Package / Case: 6-VDFN Exposed Pad Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 180mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 150 µA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 6-DFN (2x2) Voltage - Output (Max): 5.5V Voltage - Output (Min/Fixed): 1V Control Features: Enable, Power Good PSRR: 50dB (100kHz) Voltage Dropout (Max): 0.4V @ 180mA Protection Features: Over Current, Over Temperature |
auf Bestellung 2999 Stücke: Lieferzeit 21-28 Tag (e) |
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FDG1024NZ | onsemi |
Description: MOSFET 2N-CH 20V 1.2A SC88 Packaging: Cut Tape (CT) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 300mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 1.2A Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1V @ 250µA Supplier Device Package: SC-88 (SC-70-6) Part Status: Active |
auf Bestellung 10076 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC8882 | onsemi |
Description: MOSFET N-CH 30V 10.5A/16A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V Power Dissipation (Max): 2.3W (Ta), 18W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V |
auf Bestellung 34937 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB9N50CTM | onsemi |
Description: MOSFET N-CH 500V 9A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Tc) Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V Power Dissipation (Max): 135W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V |
Produkt ist nicht verfügbar |
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HUF76639S3ST | onsemi |
Description: MOSFET N-CH 100V 51A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 51A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Power Dissipation (Max): 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V |
auf Bestellung 6 Stücke: Lieferzeit 21-28 Tag (e) |
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74ALVC16245MTDX | onsemi |
Description: IC TXRX NON-INVERT 3.6V 48TSSOP Packaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 2 Logic Type: Transceiver, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 1.65V ~ 3.6V Number of Bits per Element: 8 Current - Output High, Low: 24mA, 24mA Supplier Device Package: 48-TSSOP |
auf Bestellung 1851 Stücke: Lieferzeit 21-28 Tag (e) |
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74LVX161284MTDX | onsemi |
Description: TXRX TRANSLATING IEEE 48TSSOP Packaging: Cut Tape (CT) Package / Case: 48-TFSOP (0.240", 6.10mm Width) Mounting Type: Surface Mount Number of Bits: 8 Logic Type: IEEE STD 1284 Translation Transceiver Operating Temperature: -40°C ~ 85°C Supply Voltage: 3V ~ 3.6V Supplier Device Package: 48-TSSOP Part Status: Obsolete |
auf Bestellung 815 Stücke: Lieferzeit 21-28 Tag (e) |
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BAY72TR | onsemi |
Description: DIODE GEN PURP 125V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Part Status: Active Voltage - DC Reverse (Vr) (Max): 125 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 100 V |
auf Bestellung 7770 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD86113LZ | onsemi |
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc) Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V Power Dissipation (Max): 3.1W (Ta), 29W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V |
Produkt ist nicht verfügbar |
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FJB5555TM | onsemi | Description: TRANS NPN 400V 5A D2PAK |
Produkt ist nicht verfügbar |
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FIN1047MTCX | onsemi |
Description: IC DRIVER 4/0 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Driver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 4/0 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 16-TSSOP |
auf Bestellung 2326 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD8870 | onsemi |
Description: MOSFET N-CH 30V 21A/160A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc) Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V Power Dissipation (Max): 160W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V |
auf Bestellung 4607 Stücke: Lieferzeit 21-28 Tag (e) |
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FDD3706 | onsemi |
Description: MOSFET N-CH 20V 14.7A/50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V Power Dissipation (Max): 3.8W (Ta), 44W (Tc) Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V Vgs (Max): ±12V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V |
Produkt ist nicht verfügbar |
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EGF1D | onsemi |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 10 µA @ 200 V |
auf Bestellung 7305 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF76609D3ST | onsemi |
Description: MOSFET N-CH 100V 10A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V Power Dissipation (Max): 49W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-252AA Part Status: Last Time Buy Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V |
auf Bestellung 1210 Stücke: Lieferzeit 21-28 Tag (e) |
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ES3C | onsemi |
Description: DIODE GEN PURP 150V 3A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 20 ns Technology: Standard Capacitance @ Vr, F: 45pF @ 4V, 1MHz Current - Average Rectified (Io): 3A Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -50°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 150 V Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A Current - Reverse Leakage @ Vr: 10 µA @ 150 V |
auf Bestellung 5763 Stücke: Lieferzeit 21-28 Tag (e) |
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SS15 | onsemi |
Description: DIODE SCHOTTKY 50V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 125°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A Current - Reverse Leakage @ Vr: 200 µA @ 50 V |
auf Bestellung 31162 Stücke: Lieferzeit 21-28 Tag (e) |
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FQB50N06LTM | onsemi |
Description: MOSFET N-CH 60V 52.4A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc) Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V Power Dissipation (Max): 3.75W (Ta), 121W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V |
Produkt ist nicht verfügbar |
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FDB3682 | onsemi |
Description: MOSFET N-CH 100V 6A/32A TO263 Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc) Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V Power Dissipation (Max): 95W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V |
auf Bestellung 862 Stücke: Lieferzeit 21-28 Tag (e) |
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FST3125MTCX | onsemi |
Description: IC BUS SWITCH 1 X 1:1 14TSSOP Packaging: Cut Tape (CT) Package / Case: 14-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Circuit: 1 x 1:1 Type: Bus Switch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 4V ~ 5.5V Independent Circuits: 4 Voltage Supply Source: Single Supply Supplier Device Package: 14-TSSOP Part Status: Obsolete |
auf Bestellung 832 Stücke: Lieferzeit 21-28 Tag (e) |
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74LVX573MTCX | onsemi |
Description: IC LATCH OCTAL LV 3STATE 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: Tri-State Mounting Type: Surface Mount Circuit: 8:8 Logic Type: D-Type Transparent Latch Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2V ~ 3.6V Independent Circuits: 1 Current - Output High, Low: 4mA, 4mA Delay Time - Propagation: 5.9ns Supplier Device Package: 20-TSSOP Part Status: Active |
Produkt ist nicht verfügbar |
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FAN9612MX | onsemi | Description: IC PFC CTRLR BCM 525KHZ 16SOIC |
Produkt ist nicht verfügbar |
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FDMS7670AS | onsemi | Description: MOSFET N-CH 30V 22A/42A 8PQFN |
auf Bestellung 119 Stücke: Lieferzeit 21-28 Tag (e) |
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FAN4274imu8x | onsemi |
Description: IC CMOS 2 CIRCUIT 8MSOP Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 85°C Current - Supply: 200µA (x2 Channels) Slew Rate: 3V/µs Gain Bandwidth Product: 3.7 MHz Current - Input Bias: 5 pA Voltage - Input Offset: 6 mV Supplier Device Package: 8-MSOP Part Status: Last Time Buy Number of Circuits: 2 Current - Output / Channel: 33 mA -3db Bandwidth: 3.7 MHz Voltage - Supply Span (Min): 2.3 V Voltage - Supply Span (Max): 5.25 V |
auf Bestellung 15470 Stücke: Lieferzeit 21-28 Tag (e) |
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LMV358AMU8X | onsemi | Description: IC OPAMP VFB 2 CIRCUIT 8MSOP |
Produkt ist nicht verfügbar |
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FAN2558S15X | onsemi | Description: IC REG LINEAR 1.5V 180MA SOT23-5 |
auf Bestellung 114 Stücke: Lieferzeit 21-28 Tag (e) |
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RGF1J | onsemi |
Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 250 ns Technology: Standard Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
Produkt ist nicht verfügbar |
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ISL9R8120S3ST | onsemi |
Description: DIODE GEN PURP 1.2KV 8A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 300 ns Technology: Avalanche Capacitance @ Vr, F: 30pF @ 10V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-263 (D2Pak) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 1200 V Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A Current - Reverse Leakage @ Vr: 100 µA @ 1200 V |
Produkt ist nicht verfügbar |
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SS35 | onsemi |
Description: DIODE SCHOTTKY 50V 3A SMC Packaging: Cut Tape (CT) Package / Case: DO-214AB, SMC Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 3A Supplier Device Package: SMC (DO-214AB) Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 50 V Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A Current - Reverse Leakage @ Vr: 500 µA @ 50 V |
auf Bestellung 2949 Stücke: Lieferzeit 21-28 Tag (e) |
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GF1D | onsemi |
Description: DIODE GEN PURP 200V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 200 V |
auf Bestellung 28268 Stücke: Lieferzeit 21-28 Tag (e) |
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FIN1032MTCX | onsemi |
Description: IC RECEIVER 0/4 16TSSOP Packaging: Cut Tape (CT) Package / Case: 16-TSSOP (0.173", 4.40mm Width) Mounting Type: Surface Mount Type: Receiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 0/4 Data Rate: 400Mbps Protocol: LVDS Supplier Device Package: 16-TSSOP |
auf Bestellung 5176 Stücke: Lieferzeit 21-28 Tag (e) |
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RGP10M | onsemi |
Description: DIODE GEN PURP 1KV 1A DO41 Packaging: Cut Tape (CT) Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 500 ns Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-41 Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V |
auf Bestellung 71 Stücke: Lieferzeit 21-28 Tag (e) |
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FQT13N06TF | onsemi |
Description: MOSFET N-CH 60V 2.8A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V Power Dissipation (Max): 2.1W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V |
Produkt ist nicht verfügbar |
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74VHCT541AMTCX | onsemi |
Description: IC BUF NON-INVERT 5.5V 20TSSOP Packaging: Cut Tape (CT) Package / Case: 20-TSSOP (0.173", 4.40mm Width) Output Type: 3-State Mounting Type: Surface Mount Number of Elements: 1 Logic Type: Buffer, Non-Inverting Operating Temperature: -40°C ~ 85°C (TA) Voltage - Supply: 4.5V ~ 5.5V Number of Bits per Element: 8 Current - Output High, Low: 8mA, 8mA Supplier Device Package: 20-TSSOP |
auf Bestellung 2702 Stücke: Lieferzeit 21-28 Tag (e) |
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GF1J | onsemi |
Description: DIODE GEN PURP 600V 1A DO214AC Packaging: Cut Tape (CT) Package / Case: DO-214AC, SMA Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 2 µs Technology: Standard Capacitance @ Vr, F: 15pF @ 4V, 1MHz Current - Average Rectified (Io): 1A Supplier Device Package: DO-214AC (SMA) Operating Temperature - Junction: -65°C ~ 175°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A Current - Reverse Leakage @ Vr: 5 µA @ 600 V |
auf Bestellung 61481 Stücke: Lieferzeit 21-28 Tag (e) |
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FDMC7660S | onsemi |
Description: MOSFET N-CH 30V 20A/40A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc) Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V |
auf Bestellung 2950 Stücke: Lieferzeit 21-28 Tag (e) |
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FDS8870 | onsemi |
Description: MOSFET N-CH 30V 18A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta) Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V Power Dissipation (Max): 2.5W (Ta) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V |
auf Bestellung 2621 Stücke: Lieferzeit 21-28 Tag (e) |
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HUF75329D3ST | onsemi |
Description: MOSFET N-CH 55V 20A TO252AA Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V Power Dissipation (Max): 128W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 55 V Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V |
Produkt ist nicht verfügbar |
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KA78M05RTM | onsemi |
Description: IC REG LINEAR 5V 500MA DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 6 mA Voltage - Input (Max): 35V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 5V Part Status: Obsolete PSRR: 80dB (120Hz) Voltage Dropout (Max): 2V @ 500mA (Typ) Protection Features: Over Temperature, Short Circuit |
Produkt ist nicht verfügbar |
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1N3070TR | onsemi |
Description: DIODE GEN PURP 200V 500MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 50 ns Technology: Standard Capacitance @ Vr, F: 5pF @ 0V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 100 nA @ 175 V |
auf Bestellung 66236 Stücke: Lieferzeit 21-28 Tag (e) |
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1N485BTR | onsemi |
Description: DIODE GEN PURP 200V 200MA DO35 Packaging: Cut Tape (CT) Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Speed: Small Signal =< 200mA (Io), Any Speed Technology: Standard Current - Average Rectified (Io): 200mA Supplier Device Package: DO-35 Operating Temperature - Junction: 175°C (Max) Voltage - DC Reverse (Vr) (Max): 200 V Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA Current - Reverse Leakage @ Vr: 25 nA @ 175 V |
auf Bestellung 28979 Stücke: Lieferzeit 21-28 Tag (e) |
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KA78RM33RTF | onsemi |
Description: IC REG LINEAR 3.3V 500MA DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Output Type: Fixed Mounting Type: Surface Mount Current - Output: 500mA Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 5 mA Voltage - Input (Max): 20V Number of Regulators: 1 Supplier Device Package: DPAK Voltage - Output (Min/Fixed): 3.3V Part Status: Obsolete PSRR: 55dB (120Hz) Voltage Dropout (Max): 0.6V @ 500mA Protection Features: Over Current, Over Temperature, Short Circuit Current - Supply (Max): 10 mA |
Produkt ist nicht verfügbar |
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FUSB2805MLX | onsemi |
Description: IC TRANSCEIVER FULL 1/1 32MLP Packaging: Cut Tape (CT) Package / Case: 32-WFQFN Exposed Pad Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 85°C Voltage - Supply: 2.7V ~ 4.5V Number of Drivers/Receivers: 1/1 Data Rate: 480Mbps Protocol: USB 2.0 Supplier Device Package: 32-MLP (5x5) Duplex: Full Part Status: Active |
auf Bestellung 6455 Stücke: Lieferzeit 21-28 Tag (e) |
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NC7SZ14L6X |
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Produkt ist nicht verfügbar
NC7WZ14L6X |
Hersteller: onsemi
Description: IC INVERTER 2CH 2-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Description: IC INVERTER 2CH 2-INP 6MICROPAK
Features: Schmitt Trigger
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.4V ~ 3.6V
Input Logic Level - Low: 0.2V ~ 1.2V
Max Propagation Delay @ V, Max CL: 4.9ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
FDN308P |
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 341 pF @ 10 V
Description: MOSFET P-CH 20V 1.5A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 125mOhm @ 1.5A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 341 pF @ 10 V
auf Bestellung 3563 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
22+ | 1.22 EUR |
25+ | 1.05 EUR |
100+ | 0.73 EUR |
500+ | 0.57 EUR |
1000+ | 0.46 EUR |
FSA1256L8X |
Hersteller: onsemi
Description: IC ANALOG SWITCH 8MICROPAK
Description: IC ANALOG SWITCH 8MICROPAK
auf Bestellung 25874 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 2.65 EUR |
12+ | 2.36 EUR |
25+ | 2.24 EUR |
100+ | 1.84 EUR |
250+ | 1.72 EUR |
500+ | 1.52 EUR |
1000+ | 1.2 EUR |
2500+ | 1.12 EUR |
NC7SV74L8X |
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Iq): 900 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 2 pF
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Bits per Element: 1
Description: IC FF D-TYPE SNGL 1BIT 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Complementary
Mounting Type: Surface Mount
Number of Elements: 1
Function: Set(Preset) and Reset
Type: D-Type
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Current - Quiescent (Iq): 900 µA
Current - Output High, Low: 24mA, 24mA
Trigger Type: Positive Edge
Clock Frequency: 200 MHz
Input Capacitance: 2 pF
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 2.8ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Bits per Element: 1
Produkt ist nicht verfügbar
NC7NZ17L8X |
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 8MICROPAK
Description: IC BUF NON-INVERT 5.5V 8MICROPAK
auf Bestellung 10531 Stücke:
Lieferzeit 21-28 Tag (e)NC7WZ86L8X |
Hersteller: onsemi
Description: IC GATE XOR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
Description: IC GATE XOR 2CH 2-INP 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Mounting Type: Surface Mount
Logic Type: XOR (Exclusive OR)
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 5.5V
Current - Output High, Low: 32mA, 32mA
Number of Inputs: 2
Supplier Device Package: 8-MicroPak™
Max Propagation Delay @ V, Max CL: 4.2ns @ 5V, 50pF
Number of Circuits: 2
Current - Quiescent (Max): 1 µA
auf Bestellung 165000 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
20+ | 1.33 EUR |
23+ | 1.13 EUR |
25+ | 1.06 EUR |
100+ | 0.78 EUR |
250+ | 0.66 EUR |
500+ | 0.63 EUR |
1000+ | 0.47 EUR |
2500+ | 0.44 EUR |
NC7SV125L6X |
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
Description: IC BUF NON-INVERT 3.6V 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 0.9V ~ 3.6V
Number of Bits per Element: 1
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 6-MicroPak
Part Status: Obsolete
auf Bestellung 4085 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.51 EUR |
20+ | 1.32 EUR |
25+ | 1.24 EUR |
100+ | 1.01 EUR |
250+ | 0.94 EUR |
500+ | 0.8 EUR |
1000+ | 0.64 EUR |
2500+ | 0.58 EUR |
NC7WP32K8X |
Hersteller: onsemi
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: US8
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
Description: IC GATE OR 2CH 2-INP US8
Packaging: Cut Tape (CT)
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: US8
Input Logic Level - High: 1.6V ~ 2.1V
Input Logic Level - Low: 0.7V ~ 0.9V
Max Propagation Delay @ V, Max CL: 7ns @ 3.3V, 30pF
Part Status: Obsolete
Number of Circuits: 2
Current - Quiescent (Max): 900 nA
auf Bestellung 1165 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.56 EUR |
20+ | 1.36 EUR |
25+ | 1.28 EUR |
100+ | 0.97 EUR |
250+ | 0.83 EUR |
500+ | 0.79 EUR |
1000+ | 0.6 EUR |
FDME1034CZT |
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Description: MOSFET N/P-CH 20V 3.8A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 600mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 3.8A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 300pF @ 10V
Rds On (Max) @ Id, Vgs: 66mOhm @ 3.4A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 4.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-MicroFET (1.6x1.6)
Produkt ist nicht verfügbar
FPF1039UCX |
Hersteller: onsemi
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Rds On (Typ): 20mOhm
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Supplier Device Package: 6-WLCSP (0.96x1.66)
Part Status: Last Time Buy
Description: IC PWR SWITCH LOAD MGMT 6WLCSP
Features: Slew Rate Controlled
Packaging: Cut Tape (CT)
Package / Case: 6-UFBGA, WLCSP
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Rds On (Typ): 20mOhm
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 3.5A
Supplier Device Package: 6-WLCSP (0.96x1.66)
Part Status: Last Time Buy
auf Bestellung 22561 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.11 EUR |
14+ | 1.88 EUR |
25+ | 1.79 EUR |
100+ | 1.37 EUR |
250+ | 1.21 EUR |
500+ | 1.15 EUR |
1000+ | 0.89 EUR |
74VCX245BQX |
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Description: IC TXRX NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.4V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
auf Bestellung 3017 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.15 EUR |
10+ | 2.82 EUR |
25+ | 2.68 EUR |
100+ | 2.06 EUR |
250+ | 1.82 EUR |
500+ | 1.72 EUR |
1000+ | 1.34 EUR |
NC7NZ34L8X |
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Description: IC BUF NON-INVERT 5.5V 8MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 8-UFQFN
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 3
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 8-MicroPak™
Produkt ist nicht verfügbar
74LCX04BQX |
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14DQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-DQFN (3x2.5)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
Description: IC INVERTER 6CH 1-INP 14DQFN
Packaging: Cut Tape (CT)
Package / Case: 14-VFQFN Exposed Pad
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Current - Output High, Low: 24mA, 24mA
Number of Inputs: 1
Supplier Device Package: 14-DQFN (3x2.5)
Input Logic Level - High: 1.7V ~ 2V
Input Logic Level - Low: 0.7V ~ 0.8V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 50pF
Part Status: Active
Number of Circuits: 6
Current - Quiescent (Max): 10 µA
auf Bestellung 74887 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
16+ | 1.72 EUR |
18+ | 1.52 EUR |
25+ | 1.42 EUR |
100+ | 1.08 EUR |
250+ | 0.92 EUR |
500+ | 0.87 EUR |
1000+ | 0.67 EUR |
FDC6310P |
Hersteller: onsemi
Description: MOSFET 2P-CH 20V 2.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
Description: MOSFET 2P-CH 20V 2.2A SSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 2.2A
Input Capacitance (Ciss) (Max) @ Vds: 337pF @ 10V
Rds On (Max) @ Id, Vgs: 125mOhm @ 2.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 5.2nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: SuperSOT™-6
auf Bestellung 133945 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
19+ | 1.43 EUR |
21+ | 1.24 EUR |
100+ | 0.86 EUR |
500+ | 0.72 EUR |
1000+ | 0.61 EUR |
NC7SB3157L6X |
Hersteller: onsemi
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Last Time Buy
Number of Circuits: 1
Description: IC SWITCH SPDTX1 15OHM 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 250MHz
Supplier Device Package: 6-MicroPak
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Charge Injection: 7pC
Crosstalk: -54dB @ 10MHz
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Channel-to-Channel Matching (ΔRon): 150mOhm
Switch Time (Ton, Toff) (Max): 5.2ns, 3.5ns
Channel Capacitance (CS(off), CD(off)): 6.5pF
Current - Leakage (IS(off)) (Max): 100nA
Part Status: Last Time Buy
Number of Circuits: 1
auf Bestellung 1210 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
30+ | 0.89 EUR |
32+ | 0.83 EUR |
100+ | 0.62 EUR |
250+ | 0.52 EUR |
500+ | 0.5 EUR |
1000+ | 0.37 EUR |
FAN4931IP5X |
Hersteller: onsemi
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC OPAMP VFB 1 CIRCUIT SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Voltage Feedback
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Supplier Device Package: SC-70-5
Number of Circuits: 1
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
auf Bestellung 98988 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.13 EUR |
14+ | 1.88 EUR |
25+ | 1.76 EUR |
100+ | 1.34 EUR |
250+ | 1.14 EUR |
500+ | 1.08 EUR |
1000+ | 0.83 EUR |
FAN2558MPX |
Hersteller: onsemi
Description: IC REG LINEAR POS ADJ 180MA 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable, Power Good
PSRR: 50dB (100kHz)
Voltage Dropout (Max): 0.4V @ 180mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR POS ADJ 180MA 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-VDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 180mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 150 µA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 6-DFN (2x2)
Voltage - Output (Max): 5.5V
Voltage - Output (Min/Fixed): 1V
Control Features: Enable, Power Good
PSRR: 50dB (100kHz)
Voltage Dropout (Max): 0.4V @ 180mA
Protection Features: Over Current, Over Temperature
auf Bestellung 2999 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
9+ | 3.04 EUR |
10+ | 2.72 EUR |
25+ | 2.59 EUR |
100+ | 1.99 EUR |
250+ | 1.75 EUR |
500+ | 1.66 EUR |
1000+ | 1.29 EUR |
FDG1024NZ |
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 1.2A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
Description: MOSFET 2N-CH 20V 1.2A SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 300mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 1.2A
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 10V
Rds On (Max) @ Id, Vgs: 175mOhm @ 1.2A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 2.6nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SC-88 (SC-70-6)
Part Status: Active
auf Bestellung 10076 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
18+ | 1.51 EUR |
20+ | 1.31 EUR |
100+ | 0.9 EUR |
500+ | 0.76 EUR |
1000+ | 0.64 EUR |
FDMC8882 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
Description: MOSFET N-CH 30V 10.5A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 14.3mOhm @ 10.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 18W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 945 pF @ 15 V
auf Bestellung 34937 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.18 EUR |
15+ | 1.79 EUR |
100+ | 1.39 EUR |
500+ | 1.18 EUR |
1000+ | 0.96 EUR |
FQB9N50CTM |
Hersteller: onsemi
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Description: MOSFET N-CH 500V 9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Tc)
Rds On (Max) @ Id, Vgs: 800mOhm @ 4.5A, 10V
Power Dissipation (Max): 135W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1030 pF @ 25 V
Produkt ist nicht verfügbar
HUF76639S3ST |
Hersteller: onsemi
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Description: MOSFET N-CH 100V 51A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
auf Bestellung 6 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 6.06 EUR |
74ALVC16245MTDX |
Hersteller: onsemi
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
Description: IC TXRX NON-INVERT 3.6V 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 2
Logic Type: Transceiver, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 48-TSSOP
auf Bestellung 1851 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.64 EUR |
10+ | 6.87 EUR |
25+ | 6.49 EUR |
100+ | 5.34 EUR |
250+ | 4.79 EUR |
500+ | 4.61 EUR |
74LVX161284MTDX |
Hersteller: onsemi
Description: TXRX TRANSLATING IEEE 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 8
Logic Type: IEEE STD 1284 Translation Transceiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
Description: TXRX TRANSLATING IEEE 48TSSOP
Packaging: Cut Tape (CT)
Package / Case: 48-TFSOP (0.240", 6.10mm Width)
Mounting Type: Surface Mount
Number of Bits: 8
Logic Type: IEEE STD 1284 Translation Transceiver
Operating Temperature: -40°C ~ 85°C
Supply Voltage: 3V ~ 3.6V
Supplier Device Package: 48-TSSOP
Part Status: Obsolete
auf Bestellung 815 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 3.77 EUR |
10+ | 3.39 EUR |
25+ | 3.2 EUR |
100+ | 2.73 EUR |
250+ | 2.56 EUR |
500+ | 2.24 EUR |
BAY72TR |
Hersteller: onsemi
Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
Description: DIODE GEN PURP 125V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 100 V
auf Bestellung 7770 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
32+ | 0.83 EUR |
39+ | 0.68 EUR |
100+ | 0.36 EUR |
500+ | 0.24 EUR |
1000+ | 0.16 EUR |
2000+ | 0.15 EUR |
5000+ | 0.13 EUR |
FDD86113LZ |
Hersteller: onsemi
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
Description: MOSFET N-CH 100V 4.2A/5.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.2A (Ta), 5.5A (Tc)
Rds On (Max) @ Id, Vgs: 104mOhm @ 4.2A, 10V
Power Dissipation (Max): 3.1W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 285 pF @ 50 V
Produkt ist nicht verfügbar
FIN1047MTCX |
Hersteller: onsemi
Description: IC DRIVER 4/0 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Description: IC DRIVER 4/0 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Driver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 4/0
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
auf Bestellung 2326 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
6+ | 4.52 EUR |
10+ | 4.06 EUR |
25+ | 3.83 EUR |
100+ | 3.07 EUR |
250+ | 2.68 EUR |
500+ | 2.61 EUR |
1000+ | 2.07 EUR |
FDD8870 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A/160A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
Description: MOSFET N-CH 30V 21A/160A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 21A (Ta), 160A (Tc)
Rds On (Max) @ Id, Vgs: 3.9mOhm @ 35A, 10V
Power Dissipation (Max): 160W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 118 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5160 pF @ 15 V
auf Bestellung 4607 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.19 EUR |
10+ | 3.42 EUR |
100+ | 2.66 EUR |
500+ | 2.25 EUR |
1000+ | 1.84 EUR |
FDD3706 |
Hersteller: onsemi
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Description: MOSFET N-CH 20V 14.7A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.7A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 9mOhm @ 16.2A, 10V
Power Dissipation (Max): 3.8W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 10V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1882 pF @ 10 V
Produkt ist nicht verfügbar
EGF1D |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 10 µA @ 200 V
auf Bestellung 7305 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.53 EUR |
20+ | 1.31 EUR |
100+ | 0.91 EUR |
500+ | 0.71 EUR |
1000+ | 0.58 EUR |
2000+ | 0.52 EUR |
HUF76609D3ST |
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
Description: MOSFET N-CH 100V 10A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 10A, 10V
Power Dissipation (Max): 49W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 425 pF @ 25 V
auf Bestellung 1210 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.52 EUR |
12+ | 2.21 EUR |
100+ | 1.7 EUR |
500+ | 1.34 EUR |
1000+ | 1.07 EUR |
ES3C |
Hersteller: onsemi
Description: DIODE GEN PURP 150V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
Description: DIODE GEN PURP 150V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -50°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
auf Bestellung 5763 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.53 EUR |
20+ | 1.31 EUR |
100+ | 0.91 EUR |
500+ | 0.71 EUR |
1000+ | 0.58 EUR |
SS15 |
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
Description: DIODE SCHOTTKY 50V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 50 V
auf Bestellung 31162 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.04 EUR |
30+ | 0.89 EUR |
100+ | 0.62 EUR |
500+ | 0.48 EUR |
1000+ | 0.39 EUR |
2000+ | 0.35 EUR |
FQB50N06LTM |
Hersteller: onsemi
Description: MOSFET N-CH 60V 52.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Description: MOSFET N-CH 60V 52.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 52.4A (Tc)
Rds On (Max) @ Id, Vgs: 21mOhm @ 26.2A, 10V
Power Dissipation (Max): 3.75W (Ta), 121W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 1630 pF @ 25 V
Produkt ist nicht verfügbar
FDB3682 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
Description: MOSFET N-CH 100V 6A/32A TO263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 32A (Tc)
Rds On (Max) @ Id, Vgs: 36mOhm @ 32A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1250 pF @ 25 V
auf Bestellung 862 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5+ | 5.49 EUR |
10+ | 4.54 EUR |
100+ | 3.62 EUR |
FST3125MTCX |
Hersteller: onsemi
Description: IC BUS SWITCH 1 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
Part Status: Obsolete
Description: IC BUS SWITCH 1 X 1:1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 1:1
Type: Bus Switch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4V ~ 5.5V
Independent Circuits: 4
Voltage Supply Source: Single Supply
Supplier Device Package: 14-TSSOP
Part Status: Obsolete
auf Bestellung 832 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
15+ | 1.77 EUR |
17+ | 1.57 EUR |
25+ | 1.47 EUR |
100+ | 1.12 EUR |
250+ | 0.95 EUR |
500+ | 0.9 EUR |
74LVX573MTCX |
Hersteller: onsemi
Description: IC LATCH OCTAL LV 3STATE 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.9ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Description: IC LATCH OCTAL LV 3STATE 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 3.6V
Independent Circuits: 1
Current - Output High, Low: 4mA, 4mA
Delay Time - Propagation: 5.9ns
Supplier Device Package: 20-TSSOP
Part Status: Active
Produkt ist nicht verfügbar
FDMS7670AS |
Hersteller: onsemi
Description: MOSFET N-CH 30V 22A/42A 8PQFN
Description: MOSFET N-CH 30V 22A/42A 8PQFN
auf Bestellung 119 Stücke:
Lieferzeit 21-28 Tag (e)FAN4274imu8x |
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA (x2 Channels)
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 6 mV
Supplier Device Package: 8-MSOP
Part Status: Last Time Buy
Number of Circuits: 2
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 85°C
Current - Supply: 200µA (x2 Channels)
Slew Rate: 3V/µs
Gain Bandwidth Product: 3.7 MHz
Current - Input Bias: 5 pA
Voltage - Input Offset: 6 mV
Supplier Device Package: 8-MSOP
Part Status: Last Time Buy
Number of Circuits: 2
Current - Output / Channel: 33 mA
-3db Bandwidth: 3.7 MHz
Voltage - Supply Span (Min): 2.3 V
Voltage - Supply Span (Max): 5.25 V
auf Bestellung 15470 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
13+ | 2.11 EUR |
15+ | 1.85 EUR |
25+ | 1.73 EUR |
100+ | 1.32 EUR |
250+ | 1.12 EUR |
500+ | 1.06 EUR |
1000+ | 0.81 EUR |
FAN2558S15X |
Hersteller: onsemi
Description: IC REG LINEAR 1.5V 180MA SOT23-5
Description: IC REG LINEAR 1.5V 180MA SOT23-5
auf Bestellung 114 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 2.37 EUR |
13+ | 2.11 EUR |
25+ | 2 EUR |
100+ | 1.64 EUR |
RGF1J |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 250 ns
Technology: Standard
Capacitance @ Vr, F: 8.5pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Produkt ist nicht verfügbar
ISL9R8120S3ST |
Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Description: DIODE GEN PURP 1.2KV 8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 300 ns
Technology: Avalanche
Capacitance @ Vr, F: 30pF @ 10V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-263 (D2Pak)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 1200 V
Voltage - Forward (Vf) (Max) @ If: 3.3 V @ 8 A
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Produkt ist nicht verfügbar
SS35 |
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
Description: DIODE SCHOTTKY 50V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC (DO-214AB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 3 A
Current - Reverse Leakage @ Vr: 500 µA @ 50 V
auf Bestellung 2949 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
17+ | 1.56 EUR |
20+ | 1.36 EUR |
100+ | 0.94 EUR |
500+ | 0.79 EUR |
1000+ | 0.67 EUR |
GF1D |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
Description: DIODE GEN PURP 200V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 200 V
auf Bestellung 28268 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
29+ | 0.91 EUR |
100+ | 0.68 EUR |
500+ | 0.53 EUR |
1000+ | 0.41 EUR |
2000+ | 0.38 EUR |
FIN1032MTCX |
Hersteller: onsemi
Description: IC RECEIVER 0/4 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
Description: IC RECEIVER 0/4 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
auf Bestellung 5176 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 6.71 EUR |
10+ | 6.03 EUR |
25+ | 5.69 EUR |
100+ | 4.55 EUR |
250+ | 3.98 EUR |
500+ | 3.87 EUR |
1000+ | 3.07 EUR |
RGP10M |
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Description: DIODE GEN PURP 1KV 1A DO41
Packaging: Cut Tape (CT)
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 500 ns
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-41
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.3 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
auf Bestellung 71 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
25+ | 1.07 EUR |
32+ | 0.83 EUR |
FQT13N06TF |
Hersteller: onsemi
Description: MOSFET N-CH 60V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Description: MOSFET N-CH 60V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 1.4A, 10V
Power Dissipation (Max): 2.1W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 7.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 310 pF @ 25 V
Produkt ist nicht verfügbar
74VHCT541AMTCX |
Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
Description: IC BUF NON-INVERT 5.5V 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 4.5V ~ 5.5V
Number of Bits per Element: 8
Current - Output High, Low: 8mA, 8mA
Supplier Device Package: 20-TSSOP
auf Bestellung 2702 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
12+ | 2.34 EUR |
13+ | 2.11 EUR |
25+ | 2 EUR |
100+ | 1.53 EUR |
250+ | 1.36 EUR |
500+ | 1.28 EUR |
1000+ | 1 EUR |
GF1J |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
Description: DIODE GEN PURP 600V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 600 V
auf Bestellung 61481 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
23+ | 1.17 EUR |
29+ | 0.9 EUR |
100+ | 0.54 EUR |
500+ | 0.5 EUR |
1000+ | 0.34 EUR |
2000+ | 0.31 EUR |
FDMC7660S |
Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
Description: MOSFET N-CH 30V 20A/40A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4325 pF @ 15 V
auf Bestellung 2950 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 3.38 EUR |
10+ | 2.77 EUR |
100+ | 2.16 EUR |
500+ | 1.83 EUR |
1000+ | 1.49 EUR |
FDS8870 |
Hersteller: onsemi
Description: MOSFET N-CH 30V 18A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V
Description: MOSFET N-CH 30V 18A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta)
Rds On (Max) @ Id, Vgs: 4.2mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 112 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4615 pF @ 15 V
auf Bestellung 2621 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
7+ | 4.08 EUR |
10+ | 3.39 EUR |
100+ | 2.7 EUR |
500+ | 2.28 EUR |
1000+ | 1.94 EUR |
HUF75329D3ST |
Hersteller: onsemi
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Description: MOSFET N-CH 55V 20A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 20A, 10V
Power Dissipation (Max): 128W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 55 V
Gate Charge (Qg) (Max) @ Vgs: 65 nC @ 20 V
Input Capacitance (Ciss) (Max) @ Vds: 1060 pF @ 25 V
Produkt ist nicht verfügbar
KA78M05RTM |
Hersteller: onsemi
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Description: IC REG LINEAR 5V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): 35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 5V
Part Status: Obsolete
PSRR: 80dB (120Hz)
Voltage Dropout (Max): 2V @ 500mA (Typ)
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
1N3070TR |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
Description: DIODE GEN PURP 200V 500MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 175 V
auf Bestellung 66236 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
46+ | 0.57 EUR |
55+ | 0.48 EUR |
103+ | 0.25 EUR |
500+ | 0.17 EUR |
1000+ | 0.11 EUR |
2000+ | 0.1 EUR |
5000+ | 0.089 EUR |
1N485BTR |
Hersteller: onsemi
Description: DIODE GEN PURP 200V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
Description: DIODE GEN PURP 200V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 200 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 175 V
auf Bestellung 28979 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
33+ | 0.81 EUR |
47+ | 0.56 EUR |
100+ | 0.27 EUR |
500+ | 0.23 EUR |
1000+ | 0.16 EUR |
2000+ | 0.14 EUR |
5000+ | 0.13 EUR |
KA78RM33RTF |
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Description: IC REG LINEAR 3.3V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 5 mA
Voltage - Input (Max): 20V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): 3.3V
Part Status: Obsolete
PSRR: 55dB (120Hz)
Voltage Dropout (Max): 0.6V @ 500mA
Protection Features: Over Current, Over Temperature, Short Circuit
Current - Supply (Max): 10 mA
Produkt ist nicht verfügbar
FUSB2805MLX |
Hersteller: onsemi
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
Description: IC TRANSCEIVER FULL 1/1 32MLP
Packaging: Cut Tape (CT)
Package / Case: 32-WFQFN Exposed Pad
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2.7V ~ 4.5V
Number of Drivers/Receivers: 1/1
Data Rate: 480Mbps
Protocol: USB 2.0
Supplier Device Package: 32-MLP (5x5)
Duplex: Full
Part Status: Active
auf Bestellung 6455 Stücke:
Lieferzeit 21-28 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 7.49 EUR |
10+ | 6.72 EUR |
25+ | 6.35 EUR |
100+ | 5.22 EUR |
250+ | 4.69 EUR |
500+ | 4.52 EUR |
1000+ | 3.75 EUR |