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74VHC00MX 74VHC00MX onsemi FAIRS26089-1.pdf?t.download=true&u=5oefqw Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHC02MX 74VHC02MX onsemi ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHC123AMX 74VHC123AMX onsemi 74VHC123A-D.pdf Description: IC MMV 2-CIR 8.1-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 8.1 ns
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
auf Bestellung 5658 Stücke:
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74VHC132MX 74VHC132MX onsemi 74VHC132-D.pdf Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHC138MX 74VHC138MX onsemi FAIRS03249-1.pdf?t.download=true&u=5oefqw Description: IC DECODER/DEMUX 1X3:8 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 76850 Stücke:
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74VHC139MTCX 74VHC139MTCX onsemi 74VHC139-D.pdf Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
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74VHC164MTCX 74VHC164MTCX onsemi 74vhc164-d.pdf Description: IC SHIFT REGISTER 8BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Bits per Element: 8
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74VHC4040MTCX 74VHC4040MTCX onsemi 74VHC4040.pdf Description: IC BINARY COUNTER 12BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
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74VHC4040MX 74VHC4040MX onsemi 74VHC4040.pdf Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
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74VHCT14AMTCX 74VHCT14AMTCX onsemi ONSM-S-A0003584994-1.pdf?t.download=true&u=5oefqw Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
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74VHCT573AMTCX 74VHCT573AMTCX onsemi 74vhct573a-d.pdf Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Part Status: Active
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BCP52 BCP52 onsemi bcp52-d.pdf Description: TRANS PNP 60V 1.2A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BCP69 BCP69 onsemi DS_261_BCP69.pdf Description: TRANS PNP 20V 1.5A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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ES1B ES1B onsemi ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 477751 Stücke:
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50+0.36 EUR
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ES1C ES1C onsemi ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
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ES2A ES2A onsemi es2d-d.pdf Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
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ES2C ES2C onsemi es2d-d.pdf Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
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ES3A ES3A onsemi ES3J-D.PDF Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 15598 Stücke:
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FAN3122TMX FAN3122TMX onsemi FAN3121-D.PDF Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 23ns, 19ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Part Status: Active
DigiKey Programmable: Not Verified
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10+2.82 EUR
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250+1.67 EUR
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FAN5354MPX FAN5354MPX onsemi FAIRS34070-1.pdf?t.download=true&u=5oefqw Description: IC REG BUCK ADJ 3A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLP (3.5x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 2V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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FDB050AN06A0 FDB050AN06A0 onsemi fdp050an06a0-d.pdf Description: MOSFET N-CH 60V 18A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 114 Stücke:
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FDB070AN06A0 FDB070AN06A0 onsemi FAIRS45662-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 60V 15A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 7886 Stücke:
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FDD120AN15A0 FDD120AN15A0 onsemi fdd120an15a0-d.pdf Description: MOSFET N-CH 150V 2.8A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
auf Bestellung 41013 Stücke:
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FDD2582 FDD2582 onsemi fdd2582-d.pdf Description: MOSFET N-CH 150V 3.7/21A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 7A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 25 V
auf Bestellung 1784 Stücke:
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FDD5612 FDD5612 onsemi fdd5612-d.pdf Description: MOSFET N-CH 60V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V
Produkt ist nicht verfügbar
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FDD6612A FDD6612A onsemi FDD,FDU6612A.pdf Description: MOSFET N-CH 30V 9.5A/30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
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FDLL300A FDLL300A onsemi ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 125V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
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FDLL4148-D87Z FDLL4148-D87Z onsemi 1n914-d.pdf Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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FDMC7660 FDMC7660 onsemi fdmc7660-d.pdf Description: MOSFET N-CH 30V 20A/40A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 15 V
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FDMC7692 FDMC7692 onsemi fdmc7692-d.pdf Description: MOSFET N-CH 30V 13.3A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
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FDMC86102 FDMC86102 onsemi fdmc86102-d.pdf Description: MOSFET N-CH 100V 7A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
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FDS3572 FDS3572 onsemi ONSM-S-A0003584166-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 80V 8.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
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FDS3590 FDS3590 onsemi fds3590-d.pdf Description: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
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FDS5690 FDS5690 onsemi fds5690-d.pdf Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
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FDS6576 FDS6576 onsemi fds6576-d.pdf Description: MOSFET P-CH 20V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 10 V
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FDS8896 FDS8896 onsemi fds8896-d.pdf Description: MOSFET N-CH 30V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
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FDS8978 FDS8978 onsemi fds8978-d.pdf Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
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FDS9934C FDS9934C onsemi fds9934c-d.pdf Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
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FDS9953A FDS9953A onsemi fds9953a-d.pdf Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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FDT3612 FDT3612 onsemi fdt3612-d.pdf Description: MOSFET N-CH 100V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.7A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
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FDT458P FDT458P onsemi fdt458p-d.pdf Description: MOSFET P-CH 30V 3.4A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
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FIN1048MTCX FIN1048MTCX onsemi ONSM-S-A0003589267-1.pdf?t.download=true&u=5oefqw Description: IC TRANSCEIVER 0/4 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
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FQB12P20TM FQB12P20TM onsemi fqb12p20-d.pdf Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
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FQB34P10TM FQB34P10TM onsemi FQB34P10CN-D.pdf Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
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FQB47P06TM-AM002 FQB47P06TM-AM002 onsemi fqb47p06-d.pdf Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
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FQB4N80TM FQB4N80TM onsemi fqi4n80-d.pdf Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
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FQB5N90TM FQB5N90TM onsemi fqb5n90-d.pdf Description: MOSFET N-CH 900V 5.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 589 Stücke:
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FQB6N80TM FQB6N80TM onsemi fqb6n80-d.pdf Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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FQD11P06TM FQD11P06TM onsemi fqu11p06-d.pdf Description: MOSFET P-CH 60V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 23878 Stücke:
Lieferzeit 10-14 Tag (e)
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100+1.09 EUR
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1000+0.79 EUR
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FQD13N10LTM FQD13N10LTM onsemi fqu13n10l-d.pdf Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
auf Bestellung 4976 Stücke:
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19+0.98 EUR
100+0.67 EUR
500+0.54 EUR
1000+0.49 EUR
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FQD13N10TM FQD13N10TM onsemi FQD13N10-D.pdf Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 67460 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.95 EUR
22+0.8 EUR
100+0.71 EUR
500+0.67 EUR
1000+0.61 EUR
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FQD18N20V2TM FQD18N20V2TM onsemi fqd18n20v2-d.pdf Description: MOSFET N-CH 200V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
auf Bestellung 2876 Stücke:
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11+1.73 EUR
100+1.23 EUR
500+1.02 EUR
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FQD19N10LTM FQD19N10LTM onsemi FQD19N10L-D.PDF Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 6276 Stücke:
Lieferzeit 10-14 Tag (e)
9+2.04 EUR
13+1.38 EUR
100+1.02 EUR
500+0.81 EUR
1000+0.74 EUR
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FQD1N80TM FQD1N80TM onsemi fqu1n80-d.pdf Description: MOSFET N-CH 800V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 5537 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
14+1.28 EUR
100+0.89 EUR
500+0.8 EUR
1000+0.73 EUR
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FQD2N60CTM FQD2N60CTM onsemi fqu2n60c-d.pdf Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
11+1.72 EUR
15+1.22 EUR
100+0.82 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 11
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FQD3P50TM FQD3P50TM onsemi fqd3p50tm-d.pdf Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 13477 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.76 EUR
10+1.97 EUR
100+1.33 EUR
500+1.06 EUR
1000+0.99 EUR
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FQD5P20TM FQD5P20TM onsemi fqu5p20-d.pdf Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 5628 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
100+0.78 EUR
500+0.65 EUR
1000+0.58 EUR
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FQD6N40CTM FQD6N40CTM onsemi fqd6n40c-d.pdf Description: MOSFET N-CH 400V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
auf Bestellung 8489 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.92 EUR
13+1.44 EUR
100+1.1 EUR
500+1.02 EUR
1000+0.95 EUR
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FQD7N10LTM FQD7N10LTM onsemi fqd7n10l-d.pdf Description: MOSFET N-CH 100V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Produkt ist nicht verfügbar
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FQD7P06TM FQD7P06TM onsemi fqd7p06-d.pdf Description: MOSFET P-CH 60V 5.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Produkt ist nicht verfügbar
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74VHC00MX FAIRS26089-1.pdf?t.download=true&u=5oefqw
74VHC00MX
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHC02MX ONSM-S-A0003590884-1.pdf?t.download=true&u=5oefqw
74VHC02MX
Hersteller: onsemi
Description: IC GATE NOR 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NOR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 7.5ns @ 5V, 50pF
Part Status: Obsolete
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHC123AMX 74VHC123A-D.pdf
74VHC123AMX
Hersteller: onsemi
Description: IC MMV 2-CIR 8.1-NS 16-SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: Monostable
Operating Temperature: -40°C ~ 85°C
Propagation Delay: 8.1 ns
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Schmitt Trigger Input: Yes
Supplier Device Package: 16-SOIC
Part Status: Active
Voltage - Supply: 2 V ~ 5.5 V
auf Bestellung 5658 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.87 EUR
13+1.36 EUR
25+1.23 EUR
100+1.09 EUR
250+1.02 EUR
500+0.99 EUR
Mindestbestellmenge: 10
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74VHC132MX 74VHC132-D.pdf
74VHC132MX
Hersteller: onsemi
Description: IC GATE NAND 4CH 2-INP 14SOIC
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Logic Type: NAND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 2
Supplier Device Package: 14-SOIC
Input Logic Level - High: 2.2V ~ 3.85V
Input Logic Level - Low: 0.9V ~ 1.65V
Max Propagation Delay @ V, Max CL: 9.7ns @ 5V, 50pF
Number of Circuits: 4
Current - Quiescent (Max): 2 µA
Produkt ist nicht verfügbar
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74VHC138MX FAIRS03249-1.pdf?t.download=true&u=5oefqw
74VHC138MX
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X3:8 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 3:8
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-SOIC
Part Status: Active
auf Bestellung 76850 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.16 EUR
25+1.82 EUR
100+1.44 EUR
250+1.24 EUR
500+1.13 EUR
1000+1.03 EUR
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74VHC139MTCX 74VHC139-D.pdf
74VHC139MTCX
Hersteller: onsemi
Description: IC DECODER/DEMUX 1X2:4 16-TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Circuit: 1 x 2:4
Type: Decoder/Demultiplexer
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Independent Circuits: 2
Current - Output High, Low: 8mA, 8mA
Voltage Supply Source: Single Supply
Supplier Device Package: 16-TSSOP
Part Status: Active
auf Bestellung 1502 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
28+0.64 EUR
31+0.57 EUR
100+0.5 EUR
250+0.47 EUR
500+0.44 EUR
1000+0.43 EUR
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74VHC164MTCX 74vhc164-d.pdf
74VHC164MTCX
Hersteller: onsemi
Description: IC SHIFT REGISTER 8BIT 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Output Type: Push-Pull
Mounting Type: Surface Mount
Number of Elements: 1
Function: Serial to Parallel
Logic Type: Shift Register
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 5.5V
Supplier Device Package: 14-TSSOP
Part Status: Active
Number of Bits per Element: 8
auf Bestellung 14967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
32+0.55 EUR
36+0.49 EUR
100+0.43 EUR
250+0.4 EUR
500+0.38 EUR
1000+0.37 EUR
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74VHC4040MTCX 74VHC4040.pdf
74VHC4040MTCX
Hersteller: onsemi
Description: IC BINARY COUNTER 12BIT 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-TSSOP
Part Status: Obsolete
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
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74VHC4040MX 74VHC4040.pdf
74VHC4040MX
Hersteller: onsemi
Description: IC BINARY COUNTER 12-BIT 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Binary Counter
Reset: Asynchronous
Operating Temperature: -40°C ~ 85°C
Direction: Up
Trigger Type: Negative Edge
Supplier Device Package: 16-SOIC
Part Status: Obsolete
Voltage - Supply: 2 V ~ 5.5 V
Count Rate: 210 MHz
Number of Bits per Element: 12
Produkt ist nicht verfügbar
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74VHCT14AMTCX ONSM-S-A0003584994-1.pdf?t.download=true&u=5oefqw
74VHCT14AMTCX
Hersteller: onsemi
Description: IC INVERTER 6CH 1-INP 14TSSOP
Packaging: Cut Tape (CT)
Features: Schmitt Trigger
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 14-TSSOP
Input Logic Level - High: 1.9V ~ 2.1V
Input Logic Level - Low: 0.5V ~ 0.6V
Max Propagation Delay @ V, Max CL: 9.6ns @ 5V, 50pF
Number of Circuits: 6
Current - Quiescent (Max): 2 µA
auf Bestellung 2805 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.6 EUR
19+0.97 EUR
25+0.8 EUR
100+0.62 EUR
250+0.52 EUR
500+0.47 EUR
1000+0.42 EUR
Mindestbestellmenge: 11
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74VHCT573AMTCX 74vhct573a-d.pdf
74VHCT573AMTCX
Hersteller: onsemi
Description: IC D-TYPE TRANSP SGL 8:8 20TSSOP
Packaging: Cut Tape (CT)
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Output Type: Tri-State
Mounting Type: Surface Mount
Circuit: 8:8
Logic Type: D-Type Transparent Latch
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 4.5V ~ 5.5V
Independent Circuits: 1
Current - Output High, Low: 8mA, 8mA
Delay Time - Propagation: 5.1ns
Supplier Device Package: 20-TSSOP
Part Status: Active
auf Bestellung 20030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
21+0.87 EUR
25+0.78 EUR
100+0.69 EUR
250+0.64 EUR
500+0.61 EUR
1000+0.6 EUR
Mindestbestellmenge: 15
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BCP52 bcp52-d.pdf
BCP52
Hersteller: onsemi
Description: TRANS PNP 60V 1.2A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 150mA, 2V
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.2 A
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
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BCP69 DS_261_BCP69.pdf
BCP69
Hersteller: onsemi
Description: TRANS PNP 20V 1.5A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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ES1B ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw
ES1B
Hersteller: onsemi
Description: DIODE STANDARD 100V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 100 V
auf Bestellung 477751 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
34+0.53 EUR
50+0.36 EUR
100+0.22 EUR
500+0.2 EUR
1000+0.18 EUR
2000+0.17 EUR
Mindestbestellmenge: 34
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ES1C ONSM-S-A0003539063-1.pdf?t.download=true&u=5oefqw
ES1C
Hersteller: onsemi
Description: DIODE GEN PURP 150V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 15 ns
Technology: Standard
Capacitance @ Vr, F: 7pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 920 mV @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 150 V
auf Bestellung 16636 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.79 EUR
37+0.48 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23
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ES2A es2d-d.pdf
ES2A
Hersteller: onsemi
Description: DIODE GEN PURP 50V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 19307 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
32+0.56 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.25 EUR
Mindestbestellmenge: 28
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ES2C es2d-d.pdf
ES2C
Hersteller: onsemi
Description: DIODE GEN PURP 150V 2A DO214AA
Packaging: Cut Tape (CT)
Package / Case: DO-214AA, SMB
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 18pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-214AA (SMB)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 150 V
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 2 A
Current - Reverse Leakage @ Vr: 10 µA @ 150 V
auf Bestellung 141 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.09 EUR
27+0.68 EUR
100+0.43 EUR
Mindestbestellmenge: 17
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ES3A ES3J-D.PDF
ES3A
Hersteller: onsemi
Description: DIODE STANDARD 50V 3A DO214AB
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 20 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 3A
Supplier Device Package: DO-214AB (SMC)
Operating Temperature - Junction: -50°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 950 mV @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 50 V
auf Bestellung 15598 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
48+0.37 EUR
52+0.34 EUR
Mindestbestellmenge: 48
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FAN3122TMX FAN3121-D.PDF
FAN3122TMX
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 23ns, 19ns
Channel Type: Single
Driven Configuration: Low-Side
Number of Drivers: 1
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 20424 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.45 EUR
10+2.82 EUR
25+2.4 EUR
100+1.91 EUR
250+1.67 EUR
500+1.53 EUR
1000+1.4 EUR
Mindestbestellmenge: 4
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FAN5354MPX FAIRS34070-1.pdf?t.download=true&u=5oefqw
FAN5354MPX
Hersteller: onsemi
Description: IC REG BUCK ADJ 3A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WFDFN Exposed Pad
Output Type: Adjustable
Mounting Type: Surface Mount
Number of Outputs: 1
Function: Step-Down
Current - Output: 3A
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: Positive
Frequency - Switching: 3MHz
Voltage - Input (Max): 5.5V
Topology: Buck
Supplier Device Package: 12-MLP (3.5x3)
Synchronous Rectifier: Yes
Voltage - Output (Max): 2V
Voltage - Input (Min): 2.7V
Voltage - Output (Min/Fixed): 0.8V
Produkt ist nicht verfügbar
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FDB050AN06A0 fdp050an06a0-d.pdf
FDB050AN06A0
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 80A, 10V
Power Dissipation (Max): 245W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 25 V
auf Bestellung 114 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.65 EUR
10+4.18 EUR
100+3.36 EUR
Mindestbestellmenge: 4
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FDB070AN06A0 FAIRS45662-1.pdf?t.download=true&u=5oefqw
FDB070AN06A0
Hersteller: onsemi
Description: MOSFET N-CH 60V 15A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 7mOhm @ 80A, 10V
Power Dissipation (Max): 175W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 66 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 25 V
auf Bestellung 7886 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.13 EUR
10+4.7 EUR
100+3.32 EUR
Mindestbestellmenge: 3
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FDD120AN15A0 fdd120an15a0-d.pdf
FDD120AN15A0
Hersteller: onsemi
Description: MOSFET N-CH 150V 2.8A/14A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 14A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Power Dissipation (Max): 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 14.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 770 pF @ 25 V
auf Bestellung 41013 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
14+1.26 EUR
100+0.89 EUR
500+0.71 EUR
1000+0.65 EUR
Mindestbestellmenge: 10
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FDD2582 fdd2582-d.pdf
FDD2582
Hersteller: onsemi
Description: MOSFET N-CH 150V 3.7/21A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta), 21A (Tc)
Rds On (Max) @ Id, Vgs: 66mOhm @ 7A, 10V
Power Dissipation (Max): 95W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1295 pF @ 25 V
auf Bestellung 1784 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.89 EUR
10+1.83 EUR
100+1.23 EUR
500+0.97 EUR
1000+0.89 EUR
Mindestbestellmenge: 7
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FDD5612 fdd5612-d.pdf
FDD5612
Hersteller: onsemi
Description: MOSFET N-CH 60V 5.4A TO252-3
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta)
Rds On (Max) @ Id, Vgs: 55mOhm @ 5.4A, 10V
Power Dissipation (Max): 3.8W (Ta), 42W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 30 V
Produkt ist nicht verfügbar
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FDD6612A FDD,FDU6612A.pdf
FDD6612A
Hersteller: onsemi
Description: MOSFET N-CH 30V 9.5A/30A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.5A (Ta), 30A (Tc)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.5A, 10V
Power Dissipation (Max): 2.8W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.4 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 15 V
Produkt ist nicht verfügbar
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FDLL300A ONSM-S-A0003585186-1.pdf?t.download=true&u=5oefqw
FDLL300A
Hersteller: onsemi
Description: DIODE GEN PURP 125V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: 175°C (Max)
Voltage - DC Reverse (Vr) (Max): 125 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 200 mA
Current - Reverse Leakage @ Vr: 1 nA @ 125 V
auf Bestellung 460646 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
70+0.25 EUR
114+0.16 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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FDLL4148-D87Z 1n914-d.pdf
FDLL4148-D87Z
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 149218 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
112+0.16 EUR
257+0.069 EUR
300+0.059 EUR
500+0.042 EUR
1000+0.036 EUR
2000+0.032 EUR
5000+0.027 EUR
Mindestbestellmenge: 112
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FDMC7660 fdmc7660-d.pdf
FDMC7660
Hersteller: onsemi
Description: MOSFET N-CH 30V 20A/40A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 2.2mOhm @ 20A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4830 pF @ 15 V
auf Bestellung 16987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.94 EUR
10+2.53 EUR
100+1.73 EUR
500+1.38 EUR
1000+1.27 EUR
Mindestbestellmenge: 5
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FDMC7692 fdmc7692-d.pdf
FDMC7692
Hersteller: onsemi
Description: MOSFET N-CH 30V 13.3A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.3A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 13.3A, 10V
Power Dissipation (Max): 2.3W (Ta), 29W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1680 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.46 EUR
15+1.2 EUR
100+0.93 EUR
500+0.79 EUR
1000+0.65 EUR
Mindestbestellmenge: 13
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FDMC86102 fdmc86102-d.pdf
FDMC86102
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/20A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 965 pF @ 50 V
auf Bestellung 2781 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.88 EUR
10+3.16 EUR
100+2.18 EUR
500+1.77 EUR
1000+1.63 EUR
Mindestbestellmenge: 4
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FDS3572 ONSM-S-A0003584166-1.pdf?t.download=true&u=5oefqw
FDS3572
Hersteller: onsemi
Description: MOSFET N-CH 80V 8.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.9A (Ta)
Rds On (Max) @ Id, Vgs: 16mOhm @ 8.9A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1990 pF @ 25 V
auf Bestellung 7070 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.57 EUR
10+2.13 EUR
100+1.7 EUR
500+1.43 EUR
1000+1.22 EUR
Mindestbestellmenge: 7
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FDS3590 fds3590-d.pdf
FDS3590
Hersteller: onsemi
Description: MOSFET N-CH 80V 6.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta)
Rds On (Max) @ Id, Vgs: 39mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1180 pF @ 40 V
auf Bestellung 5105 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
12+1.48 EUR
100+0.99 EUR
500+0.77 EUR
1000+0.7 EUR
Mindestbestellmenge: 8
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FDS5690 fds5690-d.pdf
FDS5690
Hersteller: onsemi
Description: MOSFET N-CH 60V 7A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta)
Rds On (Max) @ Id, Vgs: 28mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 32 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1107 pF @ 30 V
auf Bestellung 51346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
15+1.26 EUR
100+0.98 EUR
500+0.83 EUR
1000+0.67 EUR
Mindestbestellmenge: 12
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FDS6576 fds6576-d.pdf
FDS6576
Hersteller: onsemi
Description: MOSFET P-CH 20V 11A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 14mOhm @ 11A, 4.5V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±12V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 4044 pF @ 10 V
auf Bestellung 7030 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.81 EUR
12+1.49 EUR
100+1.16 EUR
500+0.98 EUR
1000+0.8 EUR
Mindestbestellmenge: 10
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FDS8896 fds8896-d.pdf
FDS8896
Hersteller: onsemi
Description: MOSFET N-CH 30V 15A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta)
Rds On (Max) @ Id, Vgs: 6mOhm @ 15A, 10V
Power Dissipation (Max): 2.5W (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2525 pF @ 15 V
auf Bestellung 13730 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
18+0.99 EUR
100+0.69 EUR
500+0.55 EUR
1000+0.5 EUR
Mindestbestellmenge: 12
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FDS8978 fds8978-d.pdf
FDS8978
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7.5A
Input Capacitance (Ciss) (Max) @ Vds: 1270pF @ 15V
Rds On (Max) @ Id, Vgs: 18mOhm @ 7.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 26nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Last Time Buy
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.48 EUR
12+1.57 EUR
100+1.04 EUR
Mindestbestellmenge: 8
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FDS9934C fds9934c-d.pdf
FDS9934C
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 6.5A/5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 6.5A, 5A
Input Capacitance (Ciss) (Max) @ Vds: 650pF @ 10V
Rds On (Max) @ Id, Vgs: 30mOhm @ 6.5A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 9nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 3643 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.37 EUR
16+1.11 EUR
100+0.87 EUR
500+0.73 EUR
1000+0.6 EUR
Mindestbestellmenge: 13
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FDS9953A fds9953a-d.pdf
FDS9953A
Hersteller: onsemi
Description: MOSFET 2P-CH 30V 2.9A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 2.9A
Input Capacitance (Ciss) (Max) @ Vds: 185pF @ 15V
Rds On (Max) @ Id, Vgs: 130mOhm @ 1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 3.5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-SOIC
Produkt ist nicht verfügbar
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FDT3612 fdt3612-d.pdf
FDT3612
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.7A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 120mOhm @ 3.7A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 632 pF @ 50 V
auf Bestellung 35314 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
16+1.13 EUR
19+0.98 EUR
100+0.68 EUR
500+0.57 EUR
1000+0.48 EUR
2000+0.43 EUR
Mindestbestellmenge: 16
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FDT458P fdt458p-d.pdf
FDT458P
Hersteller: onsemi
Description: MOSFET P-CH 30V 3.4A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.4A, 10V
Power Dissipation (Max): 3W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-223-4
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 3.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 205 pF @ 15 V
auf Bestellung 6098 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.23 EUR
17+1.07 EUR
100+0.74 EUR
500+0.62 EUR
1000+0.53 EUR
2000+0.47 EUR
Mindestbestellmenge: 15
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FIN1048MTCX ONSM-S-A0003589267-1.pdf?t.download=true&u=5oefqw
FIN1048MTCX
Hersteller: onsemi
Description: IC TRANSCEIVER 0/4 16TSSOP
Packaging: Cut Tape (CT)
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Receiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 0/4
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 16-TSSOP
auf Bestellung 631 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.52 EUR
10+4.87 EUR
25+4.18 EUR
100+3.4 EUR
250+3.01 EUR
500+2.78 EUR
Mindestbestellmenge: 3
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FQB12P20TM fqb12p20-d.pdf
FQB12P20TM
Hersteller: onsemi
Description: MOSFET P-CH 200V 11.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11.5A (Tc)
Rds On (Max) @ Id, Vgs: 470mOhm @ 5.75A, 10V
Power Dissipation (Max): 3.13W (Ta), 120W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 25 V
auf Bestellung 2605 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.7 EUR
100+1.9 EUR
Mindestbestellmenge: 5
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FQB34P10TM FQB34P10CN-D.pdf
FQB34P10TM
Hersteller: onsemi
Description: MOSFET P-CH 100V 33.5A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 33.5A (Tc)
Rds On (Max) @ Id, Vgs: 60mOhm @ 16.75A, 10V
Power Dissipation (Max): 3.75W (Ta), 155W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2910 pF @ 25 V
auf Bestellung 833 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.79 EUR
10+3.72 EUR
100+2.79 EUR
Mindestbestellmenge: 4
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FQB47P06TM-AM002 fqb47p06-d.pdf
FQB47P06TM-AM002
Hersteller: onsemi
Description: MOSFET P-CH 60V 47A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 47A (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 23.5A, 10V
Power Dissipation (Max): 3.75W (Ta), 160W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 110 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3600 pF @ 25 V
auf Bestellung 1331 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.56 EUR
10+4.27 EUR
100+3.25 EUR
Mindestbestellmenge: 4
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FQB4N80TM fqi4n80-d.pdf
FQB4N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 3.9A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.9A (Tc)
Rds On (Max) @ Id, Vgs: 3.6Ohm @ 1.95A, 10V
Power Dissipation (Max): 3.13W (Ta), 130W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 880 pF @ 25 V
auf Bestellung 893 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.56 EUR
10+2.53 EUR
100+1.93 EUR
Mindestbestellmenge: 5
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FQB5N90TM fqb5n90-d.pdf
FQB5N90TM
Hersteller: onsemi
Description: MOSFET N-CH 900V 5.4A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 2.3Ohm @ 2.7A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1550 pF @ 25 V
auf Bestellung 589 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.5 EUR
10+3.29 EUR
100+2.64 EUR
Mindestbestellmenge: 6
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FQB6N80TM fqb6n80-d.pdf
FQB6N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 5.8A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 1.95Ohm @ 2.9A, 10V
Power Dissipation (Max): 3.13W (Ta), 158W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1500 pF @ 25 V
Produkt ist nicht verfügbar
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FQD11P06TM fqu11p06-d.pdf
FQD11P06TM
Hersteller: onsemi
Description: MOSFET P-CH 60V 9.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 185mOhm @ 4.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 25 V
auf Bestellung 23878 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.24 EUR
12+1.55 EUR
100+1.09 EUR
500+0.86 EUR
1000+0.79 EUR
Mindestbestellmenge: 8
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FQD13N10LTM fqu13n10l-d.pdf
FQD13N10LTM
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 520 pF @ 25 V
auf Bestellung 4976 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.36 EUR
19+0.98 EUR
100+0.67 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 13
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FQD13N10TM FQD13N10-D.pdf
FQD13N10TM
Hersteller: onsemi
Description: MOSFET N-CH 100V 10A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Tc)
Rds On (Max) @ Id, Vgs: 180mOhm @ 5A, 10V
Power Dissipation (Max): 2.5W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 450 pF @ 25 V
auf Bestellung 67460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.95 EUR
22+0.8 EUR
100+0.71 EUR
500+0.67 EUR
1000+0.61 EUR
Mindestbestellmenge: 19
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FQD18N20V2TM fqd18n20v2-d.pdf
FQD18N20V2TM
Hersteller: onsemi
Description: MOSFET N-CH 200V 15A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
Rds On (Max) @ Id, Vgs: 140mOhm @ 7.5A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1080 pF @ 25 V
auf Bestellung 2876 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.32 EUR
11+1.73 EUR
100+1.23 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 8
Im Einkaufswagen  Stück im Wert von  UAH
FQD19N10LTM FQD19N10L-D.PDF
FQD19N10LTM
Hersteller: onsemi
Description: MOSFET N-CH 100V 15.6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15.6A (Tc)
Rds On (Max) @ Id, Vgs: 100mOhm @ 7.8A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 870 pF @ 25 V
auf Bestellung 6276 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.04 EUR
13+1.38 EUR
100+1.02 EUR
500+0.81 EUR
1000+0.74 EUR
Mindestbestellmenge: 9
Im Einkaufswagen  Stück im Wert von  UAH
FQD1N80TM fqu1n80-d.pdf
FQD1N80TM
Hersteller: onsemi
Description: MOSFET N-CH 800V 1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Tc)
Rds On (Max) @ Id, Vgs: 20Ohm @ 500mA, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 7.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 195 pF @ 25 V
auf Bestellung 5537 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
14+1.28 EUR
100+0.89 EUR
500+0.8 EUR
1000+0.73 EUR
Mindestbestellmenge: 10
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FQD2N60CTM fqu2n60c-d.pdf
FQD2N60CTM
Hersteller: onsemi
Description: MOSFET N-CH 600V 1.9A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.9A (Tc)
Rds On (Max) @ Id, Vgs: 4.7Ohm @ 950mA, 10V
Power Dissipation (Max): 2.5W (Ta), 44W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 235 pF @ 25 V
auf Bestellung 3611 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.72 EUR
15+1.22 EUR
100+0.82 EUR
500+0.65 EUR
1000+0.59 EUR
Mindestbestellmenge: 11
Im Einkaufswagen  Stück im Wert von  UAH
FQD3P50TM fqd3p50tm-d.pdf
FQD3P50TM
Hersteller: onsemi
Description: MOSFET P-CH 500V 2.1A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.1A (Tc)
Rds On (Max) @ Id, Vgs: 4.9Ohm @ 1.05A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 23 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 660 pF @ 25 V
auf Bestellung 13477 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+1.97 EUR
100+1.33 EUR
500+1.06 EUR
1000+0.99 EUR
Mindestbestellmenge: 7
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FQD5P20TM fqu5p20-d.pdf
FQD5P20TM
Hersteller: onsemi
Description: MOSFET P-CH 200V 3.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.4Ohm @ 1.85A, 10V
Power Dissipation (Max): 2.5W (Ta), 45W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
auf Bestellung 5628 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
100+0.78 EUR
500+0.65 EUR
1000+0.58 EUR
Mindestbestellmenge: 18
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FQD6N40CTM fqd6n40c-d.pdf
FQD6N40CTM
Hersteller: onsemi
Description: MOSFET N-CH 400V 4.5A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 1Ohm @ 2.25A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 400 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 625 pF @ 25 V
auf Bestellung 8489 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
13+1.44 EUR
100+1.1 EUR
500+1.02 EUR
1000+0.95 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FQD7N10LTM fqd7n10l-d.pdf
FQD7N10LTM
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.8A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.8A (Tc)
Rds On (Max) @ Id, Vgs: 350mOhm @ 2.9A, 10V
Power Dissipation (Max): 2.5W (Ta), 25W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 6 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 290 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FQD7P06TM fqd7p06-d.pdf
FQD7P06TM
Hersteller: onsemi
Description: MOSFET P-CH 60V 5.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Tc)
Rds On (Max) @ Id, Vgs: 451mOhm @ 2.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 28W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 8.2 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 295 pF @ 25 V
Produkt ist nicht verfügbar
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