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FCU900N60Z FCU900N60Z onsemi fcu900n60z-d.pdf Description: MOSFET N-CH 600V 4.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
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FOD8321 FOD8321 onsemi fod8321-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
auf Bestellung 783 Stücke:
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2+13.42 EUR
10+9.5 EUR
100+7.77 EUR
500+7.46 EUR
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FDMA910PZ FDMA910PZ onsemi fdma910pz-d.pdf Description: MOSFET P-CH 20V 9.4A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V
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6000+0.43 EUR
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FDMA910PZ FDMA910PZ onsemi fdma910pz-d.pdf Description: MOSFET P-CH 20V 9.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V
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17+1.26 EUR
100+0.82 EUR
500+0.64 EUR
1000+0.57 EUR
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FDB9403-F085 FDB9403-F085 onsemi FDB9403_F085-D.PDF Description: MOSFET N-CH 40V 110A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Qualification: AEC-Q101
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FLD00060 onsemi Description: SENSOR OPT 640NM AMBIENT 8 LFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LFDFN
Wavelength: 640nm
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.4V ~ 3.6V
Supplier Device Package: 8-SMD
Proximity Detection: Yes
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FLS0116MX FLS0116MX onsemi fls0116-d.pdf Description: IC LED DRIVER OFFL ANALOG 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 20kHz ~ 250kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: Analog
Voltage - Supply (Max): 20V
Part Status: Active
Produkt ist nicht verfügbar
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FLS0116MX FLS0116MX onsemi fls0116-d.pdf Description: IC LED DRIVER OFFL ANALOG 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 20kHz ~ 250kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: Analog
Voltage - Supply (Max): 20V
Part Status: Active
Produkt ist nicht verfügbar
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FDB9403-F085 FDB9403-F085 onsemi FDB9403_F085-D.PDF Description: MOSFET N-CH 40V 110A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FOD8320V FOD8320V onsemi fod8320-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 5SOP
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FOD8320R2V FOD8320R2V onsemi fod8320-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
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FAN6224M FAN6224M onsemi fan6224-d.pdf Description: IC CTLR SR SYNC RECT LLC 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10.1V ~ 27.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FAN6224M FAN6224M onsemi fan6224-d.pdf Description: IC CTLR SR SYNC RECT LLC 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10.1V ~ 27.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FOD8316R2 FOD8316R2 onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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FOD8316R2V FOD8316R2V onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 750 Stücke:
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FOD8320R2 FOD8320R2 onsemi fod8320-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
auf Bestellung 2100 Stücke:
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2+10.6 EUR
10+7.94 EUR
100+6.37 EUR
500+5.76 EUR
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FOD8320R2 FOD8320R2 onsemi fod8320-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
auf Bestellung 2000 Stücke:
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1000+5.46 EUR
2000+5.27 EUR
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FOD8316V FOD8316V onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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FOD8316R2V FOD8316R2V onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 750 Stücke:
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2+16.53 EUR
10+11.98 EUR
100+9.9 EUR
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FOD8320R2V FOD8320R2V onsemi fod8320-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
auf Bestellung 347 Stücke:
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2+14.08 EUR
10+9.95 EUR
100+8.15 EUR
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FOD8316R2 FOD8316R2 onsemi fod8316-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 722 Stücke:
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2+16.53 EUR
10+11.98 EUR
100+9.9 EUR
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FDMC86160 FDMC86160 onsemi fdmc86160-d.pdf Description: MOSFET N CH 100V 9A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Produkt ist nicht verfügbar
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FGH75T65UPD FGH75T65UPD onsemi fgh75t65upd-d.pdf Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/166ns
Switching Energy: 2.85mJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 385 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
auf Bestellung 71 Stücke:
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2+13.72 EUR
30+7.94 EUR
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FGA20S125P FGA20S125P onsemi fga20s125p-d.pdf Description: IGBT 1250V 40A 250W TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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FDMC86520DC FDMC86520DC onsemi fdmc86520dc-d.pdf Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
auf Bestellung 12000 Stücke:
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3000+2.62 EUR
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FDMC86520DC FDMC86520DC onsemi fdmc86520dc-d.pdf Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
auf Bestellung 14875 Stücke:
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3+7.56 EUR
10+4.96 EUR
100+3.49 EUR
500+2.86 EUR
1000+2.65 EUR
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FDMC86160 FDMC86160 onsemi fdmc86160-d.pdf Description: MOSFET N CH 100V 9A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 1360 Stücke:
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4+6.76 EUR
10+4.4 EUR
50+3.39 EUR
100+3.07 EUR
500+2.5 EUR
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FCD600N60Z FCD600N60Z onsemi FCD600N60Z-D.pdf Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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FOD8318R2V FOD8318R2V onsemi fod8318-d.pdf Description: OPTOISO 4.243KV GATE DRIVER 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
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FOD8318R2V FOD8318R2V onsemi fod8318-d.pdf Description: OPTOISO 4.243KV GATE DRIVER 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 4243Vrms
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
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FDPC8013S FDPC8013S onsemi fdpc8013s-d.pdf Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
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FDMQ86530L FDMQ86530L onsemi fdmq86530l-d.pdf Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
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FCD380N60E FCD380N60E onsemi FCD380N60E-D.pdf Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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FCB20N60F-F085 FCB20N60F-F085 onsemi FCB20N60F_F085-D.PDF Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
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FDPC8013S FDPC8013S onsemi fdpc8013s-d.pdf Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
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FCD600N60Z FCD600N60Z onsemi FCD600N60Z-D.pdf Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
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FDMQ86530L FDMQ86530L onsemi fdmq86530l-d.pdf Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
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FCD380N60E FCD380N60E onsemi FCD380N60E-D.pdf Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
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FDD770N15A FDD770N15A onsemi FDD770N15A-D.pdf Description: MOSFET N CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
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FDMF6821A FDMF6821A onsemi fdmf6821a-d.pdf Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
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FDB38N30U FDB38N30U onsemi FDB38N30U-D.pdf Description: MOSFET N CH 300V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
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FCH041N60E FCH041N60E onsemi FCH041N60E-D.PDF Description: MOSFET N-CH 600V 77A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V
Power Dissipation (Max): 592W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V
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FDMA1430JP FDMA1430JP onsemi fdma1430jp-d.pdf Description: FET/BJT NPN/P CH 30V 2.9A MICROF
Supplier Device Package: 6-MicroFET (2x2)
Applications: Load Switch
Transistor Type: NPN, P-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 2.9A
Package / Case: 6-VDFN Exposed Pad
Voltage - Rated: 30V
Packaging: Tape & Reel (TR)
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FGH50T65UPD FGH50T65UPD onsemi fgh50t65upd-d.pdf Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/160ns
Switching Energy: 2.7mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 230 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 340 W
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FOD8318R2 FOD8318R2 onsemi fod8318-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
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FOD8318V FOD8318V onsemi fod8318-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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FOD8318 FOD8318 onsemi fod8318-d.pdf Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
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500+8.68 EUR
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FGAF40N60SMD FGAF40N60SMD onsemi fgaf40n60smd-d.pdf Description: IGBT FIELD STOP 600V 80A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 115 W
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FDD4N60NZ FDD4N60NZ onsemi fdd4n60nz-d.pdf Description: MOSFET N-CH 600V 3.4A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
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FOD8321R2V FOD8321R2V onsemi fod8321-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
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FOD8321R2 FOD8321R2 onsemi fod8321-d.pdf Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tape & Reel (TR)
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FDMC86248 FDMC86248 onsemi fdmc86248-d.pdf Description: MOSFET N CH 150V 3.4A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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FGH30S130P FGH30S130P onsemi fgh30s130p-d.pdf Description: IGBT TRENCH FS 1300V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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FDMA8878 FDMA8878 onsemi FDMA8878-D.PDF Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
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FGA25S125P FGA25S125P onsemi fga25s125p-d.pdf Description: IGBT 1250V 50A 250W TO-3PN
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 204 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FDMC7208S FDMC7208S onsemi fdmc7208s-d.pdf Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FFH75H60S FFH75H60S onsemi ffh75h60s-d.pdf Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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FDMC8327L FDMC8327L onsemi fdmc8327l-d.pdf Description: MOSFET N-CH 40V 12A/14A 8MLP
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
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FOD8321V FOD8321V onsemi fod8321-d.pdf Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tube
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500+6.12 EUR
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FDMS8820 FDMS8820 onsemi fdms8820-d.pdf Description: MOSFET N-CH 30V 28A/116A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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FCU900N60Z fcu900n60z-d.pdf
FCU900N60Z
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A IPAK
Packaging: Tube
Package / Case: TO-251-3 Stub Leads, IPak
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Power Dissipation (Max): 52W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: IPAK
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 710 pF @ 25 V
Produkt ist nicht verfügbar
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FOD8321 fod8321-d.pdf
FOD8321
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
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FDMA910PZ fdma910pz-d.pdf
FDMA910PZ
Hersteller: onsemi
Description: MOSFET P-CH 20V 9.4A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V
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FDMA910PZ fdma910pz-d.pdf
FDMA910PZ
Hersteller: onsemi
Description: MOSFET P-CH 20V 9.4A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 9.4A (Ta)
Rds On (Max) @ Id, Vgs: 20mOhm @ 9.4A, 4.5V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2805 pF @ 10 V
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11+2.01 EUR
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100+0.82 EUR
500+0.64 EUR
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FDB9403-F085 FDB9403_F085-D.PDF
FDB9403-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A TO263AB
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Qualification: AEC-Q101
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FLD00060
Hersteller: onsemi
Description: SENSOR OPT 640NM AMBIENT 8 LFDFN
Packaging: Tape & Reel (TR)
Package / Case: 8-LFDFN
Wavelength: 640nm
Output Type: I2C
Mounting Type: Surface Mount
Type: Ambient
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.4V ~ 3.6V
Supplier Device Package: 8-SMD
Proximity Detection: Yes
Produkt ist nicht verfügbar
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FLS0116MX fls0116-d.pdf
FLS0116MX
Hersteller: onsemi
Description: IC LED DRIVER OFFL ANALOG 7SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 20kHz ~ 250kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: Analog
Voltage - Supply (Max): 20V
Part Status: Active
Produkt ist nicht verfügbar
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FLS0116MX fls0116-d.pdf
FLS0116MX
Hersteller: onsemi
Description: IC LED DRIVER OFFL ANALOG 7SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width), 7 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Frequency: 20kHz ~ 250kHz
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): Yes
Topology: Step-Down (Buck)
Supplier Device Package: 7-SOIC
Dimming: Analog
Voltage - Supply (Max): 20V
Part Status: Active
Produkt ist nicht verfügbar
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FDB9403-F085 FDB9403_F085-D.PDF
FDB9403-F085
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.2mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 213 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12700 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FOD8320V fod8320-d.pdf
FOD8320V
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Produkt ist nicht verfügbar
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FOD8320R2V fod8320-d.pdf
FOD8320R2V
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Produkt ist nicht verfügbar
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FAN6224M fan6224-d.pdf
FAN6224M
Hersteller: onsemi
Description: IC CTLR SR SYNC RECT LLC 8SOP
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10.1V ~ 27.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
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FAN6224M fan6224-d.pdf
FAN6224M
Hersteller: onsemi
Description: IC CTLR SR SYNC RECT LLC 8SOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 10.1V ~ 27.5V
Applications: Secondary-Side Controller, Synchronous Rectifier
Supplier Device Package: 8-SOIC
Part Status: Obsolete
Current - Supply: 7 mA
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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FOD8316R2 fod8316-d.pdf
FOD8316R2
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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FOD8316R2V fod8316-d.pdf
FOD8316R2V
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
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750+8.39 EUR
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FOD8320R2 fod8320-d.pdf
FOD8320R2
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
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2+10.6 EUR
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100+6.37 EUR
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FOD8320R2 fod8320-d.pdf
FOD8320R2
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.5V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2A, 2A
Voltage - Isolation: 5000Vrms
Approval Agency: UL
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 60ns, 60ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 400ns, 400ns
Pulse Width Distortion (Max): 100ns
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 16V ~ 30V
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1000+5.46 EUR
2000+5.27 EUR
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FOD8316V fod8316-d.pdf
FOD8316V
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Tube
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
Produkt ist nicht verfügbar
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FOD8316R2V fod8316-d.pdf
FOD8316R2V
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 750 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+16.53 EUR
10+11.98 EUR
100+9.9 EUR
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FOD8320R2V fod8320-d.pdf
FOD8320R2V
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
auf Bestellung 347 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+14.08 EUR
10+9.95 EUR
100+8.15 EUR
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FOD8316R2 fod8316-d.pdf
FOD8316R2
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 34ns, 34ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Pulse Width Distortion (Max): 300ns
Part Status: Active
Number of Channels: 1
Voltage - Output Supply: 15V ~ 30V
auf Bestellung 722 Stücke:
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AnzahlPrivatkunde
2+16.53 EUR
10+11.98 EUR
100+9.9 EUR
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FDMC86160 fdmc86160-d.pdf
FDMC86160
Hersteller: onsemi
Description: MOSFET N CH 100V 9A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Produkt ist nicht verfügbar
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FGH75T65UPD fgh75t65upd-d.pdf
FGH75T65UPD
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 85 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/166ns
Switching Energy: 2.85mJ (on), 1.2mJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 385 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 375 W
auf Bestellung 71 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+13.72 EUR
30+7.94 EUR
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FGA20S125P fga20s125p-d.pdf
FGA20S125P
Hersteller: onsemi
Description: IGBT 1250V 40A 250W TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.5V @ 15V, 20A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Gate Charge: 129 nC
Current - Collector (Ic) (Max): 40 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector Pulsed (Icm): 60 A
Power - Max: 250 W
Produkt ist nicht verfügbar
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FDMC86520DC fdmc86520dc-d.pdf
FDMC86520DC
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3000+2.62 EUR
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FDMC86520DC fdmc86520dc-d.pdf
FDMC86520DC
Hersteller: onsemi
Description: MOSFET N-CH 60V 17A/40A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 40A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 17A, 10V
Power Dissipation (Max): 3W (Ta), 73W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2790 pF @ 30 V
auf Bestellung 14875 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+7.56 EUR
10+4.96 EUR
100+3.49 EUR
500+2.86 EUR
1000+2.65 EUR
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FDMC86160 fdmc86160-d.pdf
FDMC86160
Hersteller: onsemi
Description: MOSFET N CH 100V 9A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 1360 Stücke:
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AnzahlPrivatkunde
4+6.76 EUR
10+4.4 EUR
50+3.39 EUR
100+3.07 EUR
500+2.5 EUR
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FCD600N60Z FCD600N60Z-D.pdf
FCD600N60Z
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 14928 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+5.57 EUR
10+3.62 EUR
100+2.49 EUR
500+2.01 EUR
1000+1.92 EUR
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FOD8318R2V fod8318-d.pdf
FOD8318R2V
Hersteller: onsemi
Description: OPTOISO 4.243KV GATE DRIVER 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FOD8318R2V fod8318-d.pdf
FOD8318R2V
Hersteller: onsemi
Description: OPTOISO 4.243KV GATE DRIVER 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 4243Vrms
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 469 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2+19.02 EUR
10+13.79 EUR
100+11.4 EUR
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FDPC8013S fdpc8013s-d.pdf
FDPC8013S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
auf Bestellung 868 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
5+4.52 EUR
10+2.9 EUR
100+1.99 EUR
500+1.59 EUR
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FDMQ86530L fdmq86530l-d.pdf
FDMQ86530L
Hersteller: onsemi
Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
auf Bestellung 871 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
3+8.25 EUR
10+5.45 EUR
100+3.84 EUR
500+3.3 EUR
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FCD380N60E FCD380N60E-D.pdf
FCD380N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 2859 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
4+6.66 EUR
10+4.34 EUR
100+3.02 EUR
500+2.46 EUR
1000+2.43 EUR
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FCB20N60F-F085 FCB20N60F_F085-D.PDF
FCB20N60F-F085
Hersteller: onsemi
Description: MOSFET N-CH 600V 20A TO263AB
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Tc)
Rds On (Max) @ Id, Vgs: 195mOhm @ 20A, 10V
Power Dissipation (Max): 405W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 102 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2035 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDPC8013S fdpc8013s-d.pdf
FDPC8013S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A PWRCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 827pF @ 15V
Rds On (Max) @ Id, Vgs: 6.4mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 13nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
Produkt ist nicht verfügbar
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FCD600N60Z FCD600N60Z-D.pdf
FCD600N60Z
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.58 EUR
5000+1.56 EUR
Mindestbestellmenge: 2500 Stücke
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FDMQ86530L fdmq86530l-d.pdf
FDMQ86530L
Hersteller: onsemi
Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Produkt ist nicht verfügbar
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FCD380N60E FCD380N60E-D.pdf
FCD380N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+1.99 EUR
Mindestbestellmenge: 2500 Stücke
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FDD770N15A FDD770N15A-D.pdf
FDD770N15A
Hersteller: onsemi
Description: MOSFET N CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
2500+0.89 EUR
Mindestbestellmenge: 2500 Stücke
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FDMF6821A fdmf6821a-d.pdf
FDMF6821A
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
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FDB38N30U FDB38N30U-D.pdf
FDB38N30U
Hersteller: onsemi
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
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FCH041N60E FCH041N60E-D.PDF
FCH041N60E
Hersteller: onsemi
Description: MOSFET N-CH 600V 77A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V
Power Dissipation (Max): 592W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V
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60+15.14 EUR
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FDMA1430JP fdma1430jp-d.pdf
FDMA1430JP
Hersteller: onsemi
Description: FET/BJT NPN/P CH 30V 2.9A MICROF
Supplier Device Package: 6-MicroFET (2x2)
Applications: Load Switch
Transistor Type: NPN, P-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 2.9A
Package / Case: 6-VDFN Exposed Pad
Voltage - Rated: 30V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FGH50T65UPD fgh50t65upd-d.pdf
FGH50T65UPD
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/160ns
Switching Energy: 2.7mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 230 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 340 W
auf Bestellung 223 Stücke:
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2+13.95 EUR
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FOD8318R2 fod8318-d.pdf
FOD8318R2
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Produkt ist nicht verfügbar
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FOD8318V fod8318-d.pdf
FOD8318V
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
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FOD8318 fod8318-d.pdf
FOD8318
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 2970 Stücke:
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2+16.53 EUR
10+11.98 EUR
100+9.9 EUR
500+8.68 EUR
1000+8.2 EUR
2000+8.01 EUR
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FGAF40N60SMD fgaf40n60smd-d.pdf
FGAF40N60SMD
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 115 W
auf Bestellung 254 Stücke:
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2+10.64 EUR
30+6.01 EUR
120+5 EUR
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FDD4N60NZ fdd4n60nz-d.pdf
FDD4N60NZ
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.4A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
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FOD8321R2V fod8321-d.pdf
FOD8321R2V
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Produkt ist nicht verfügbar
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FOD8321R2 fod8321-d.pdf
FOD8321R2
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMC86248 fdmc86248-d.pdf
FDMC86248
Hersteller: onsemi
Description: MOSFET N CH 150V 3.4A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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3000+1.64 EUR
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FGH30S130P fgh30s130p-d.pdf
FGH30S130P
Hersteller: onsemi
Description: IGBT TRENCH FS 1300V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 500 W
Produkt ist nicht verfügbar
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FDMA8878 FDMA8878-D.PDF
FDMA8878
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
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3000+1.11 EUR
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FGA25S125P fga25s125p-d.pdf
FGA25S125P
Hersteller: onsemi
Description: IGBT 1250V 50A 250W TO-3PN
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 204 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
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FDMC7208S fdmc7208s-d.pdf
FDMC7208S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FFH75H60S ffh75h60s-d.pdf
FFH75H60S
Hersteller: onsemi
Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
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3+9.65 EUR
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FDMC8327L fdmc8327l-d.pdf
FDMC8327L
Hersteller: onsemi
Description: MOSFET N-CH 40V 12A/14A 8MLP
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
auf Bestellung 36000 Stücke:
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3000+0.65 EUR
6000+0.61 EUR
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FOD8321V fod8321-d.pdf
FOD8321V
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tube
auf Bestellung 2000 Stücke:
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2+11.3 EUR
10+8.5 EUR
100+6.84 EUR
500+6.12 EUR
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2000+5.69 EUR
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FDMS8820 fdms8820-d.pdf
FDMS8820
Hersteller: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 21000 Stücke:
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AnzahlPrivatkunde
3000+0.93 EUR
6000+0.88 EUR
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