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FDMS8820 FDMS8820 onsemi fdms8820-d.pdf Description: MOSFET N-CH 30V 28A/116A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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FGH40T65UPD FGH40T65UPD onsemi fgh40t65upd-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Produkt ist nicht verfügbar
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FXMHD103UMX FXMHD103UMX onsemi FXMHD103_Rev_1.0.2.pdf Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Tape & Reel (TR)
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FXWA9306L8X FXWA9306L8X onsemi fxwa9306-d.pdf Description: IC TRANSLATOR BIDIR 8MICROPAK
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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HUF76633P3-F085 HUF76633P3-F085 onsemi Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Qualification: AEC-Q101
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DFB2080 DFB2080 onsemi dfb2080-d.pdf Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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DFB2040 DFB2040 onsemi dfb2080-d.pdf Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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FXL6408UMX FXL6408UMX onsemi fxl6408-d.pdf Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
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FSBB30CH60CT FSBB30CH60CT onsemi fsbb30ch60c-d.pdf Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
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FSL137MRIN FSL137MRIN onsemi fsl137mrin-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 30 W
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
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HUF76639S3ST-F085 HUF76639S3ST-F085 onsemi huf76639s3s-d.pdf Description: MOSFET N CH 100V 51A TO-263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
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FDMS030N06B FDMS030N06B onsemi fdms030n06b-d.pdf Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
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FDMS8090 FDMS8090 onsemi fdms8090-d.pdf Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
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FDMC89521L FDMC89521L onsemi fdmc89521l-d.pdf Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.9W (Ta), 16W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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FDP053N08B-F102 FDP053N08B-F102 onsemi fdp053n08b-d.pdf Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
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FDME820NZT FDME820NZT onsemi fdme820nzt-d.pdf Description: MOSFET N-CH 20V 9A MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MicroFet 1.6x1.6 Thin
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
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FDMF3030 FDMF3030 onsemi fdmf3030-d.pdf Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 900mOhm LS, 800mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
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FDMS86101A FDMS86101A onsemi fdms86101a-d.pdf Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
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FDMS7678 FDMS7678 onsemi fdms7678-d.pdf Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
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DFB25100 DFB25100 onsemi DFB2505-D.PDF Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FAN53600AUC33X FAN53600AUC33X onsemi fan53610-d.pdf Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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FAN3227TMX-F085 FAN3227TMX-F085 onsemi FAN3229T_F085-D.PDF Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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BR262AD001EVK onsemi br262-d.pdf Description: BOARD EVAL FOR BR262
Packaging: Bulk
Function: Audio Processing
Type: Audio
Contents: Board(s)
Utilized IC / Part: BR262
Primary Attributes: Noise-Cancelling
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FDMS86200DC FDMS86200DC onsemi fdms86200dc-d.pdf Description: MOSFET N-CH 150V 9.3A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V
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FDMC86260 FDMC86260 onsemi fdmc86260-d.pdf Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
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FOD8160R2 FOD8160R2 onsemi fod8160-d.pdf Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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FOD8160 FOD8160 onsemi fod8160-d.pdf Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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FCH041N60F FCH041N60F onsemi FCH041N60F-D.PDF Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V
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FDMS8333L FDMS8333L onsemi fdms8333l-d.pdf Description: MOSFET N CH 40V 22A POWER 56
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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FDMS8333L FDMS8333L onsemi fdms8333l-d.pdf Description: MOSFET N CH 40V 22A POWER 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
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FGD3N60UNDF FGD3N60UNDF onsemi fgd3n60undf-d.pdf Description: IGBT NPT 600V 6A TO-252AA
Power - Max: 60 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 1.6 nC
Test Condition: 400V, 3A, 10Ohm, 15V
Switching Energy: 52µJ (on), 30µJ (off)
Td (on/off) @ 25°C: 5.5ns/22ns
IGBT Type: NPT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Reverse Recovery Time (trr): 21 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
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QSB34CGR QSB34CGR onsemi QSB34-D.PDF Description: SENSOR PHOTODIODE 940NM 2SMD GW
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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NCS1002ADR2G NCS1002ADR2G onsemi ncs1002a-d.pdf Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
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LMV932DR2G LMV932DR2G onsemi lmv931-d.pdf Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
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LMV932DR2G LMV932DR2G onsemi lmv931-d.pdf Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
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NCS1002ADR2G NCS1002ADR2G onsemi ncs1002a-d.pdf Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
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LMV932DMR2G LMV932DMR2G onsemi lmv931-d.pdf Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
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LMV932DMR2G LMV932DMR2G onsemi lmv931-d.pdf Description: IC CMOS 2 CIRCUIT 8MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 80 mA
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1 nA
Gain Bandwidth Product: 1.5 MHz
Slew Rate: 0.35V/µs
Current - Supply: 75µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
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TS391SN2T1G TS391SN2T1G onsemi ts391-d.pdf Description: IC COMPARATOR 1CH 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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TS391SN2T1G TS391SN2T1G onsemi ts391-d.pdf Description: IC COMPARATOR 1CH 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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NCS12802MNTXG onsemi Description: IC VIDEO VOLT REF GEN 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Gamma Reference
Voltage - Supply: 9V ~ 17.5V
Applications: Video Display
Supplier Device Package: 24-QFN (4x4)
Control Interface: I2C
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NCS2584DTBR2G NCS2584DTBR2G onsemi ncs2584-d.pdf Description: IC VIDEO DRIVER 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
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NCS2584DTBR2G NCS2584DTBR2G onsemi ncs2584-d.pdf Description: IC VIDEO DRIVER 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
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NCS3402DR2G NCS3402DR2G onsemi ncs3402-d.pdf Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
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NCS3402DR2G NCS3402DR2G onsemi ncs3402-d.pdf Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
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NCS7301SN1T1G onsemi Description: IC OP AMP
Packaging: Tape & Reel (TR)
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FDLL914B FDLL914B onsemi 1n914-d.pdf Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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KST3906MTF KST3906MTF onsemi KST3906.pdf Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
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FJX3904TF FJX3904TF onsemi fjx3904-d.pdf Description: TRANS NPN 40V 0.2A SOT323
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
Packaging: Cut Tape (CT)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
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BCW89 BCW89 onsemi BCW89.pdf description Description: TRANS PNP 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
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KST43MTF KST43MTF onsemi FAIRS47383-1.pdf?t.download=true&u=5oefqw Description: TRANS NPN 200V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 mW
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FJX992TF FJX992TF onsemi fjx992-d.pdf Description: TRANS PNP 120V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
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MMSZ5255B MMSZ5255B onsemi MMSZ5227B.pdf Description: DIODE ZENER 28V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
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MPSA05RA MPSA05RA onsemi MPSA05%2CMMBTA05.pdf Description: TRANS NPN 60V 0.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
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1N5231CTR 1N5231CTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
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1N5243BTR 1N5243BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
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1N5244BTR 1N5244BTR onsemi 1N5221B-D.PDF Description: DIODE ZENER 14V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
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1N5246BTR 1N5246BTR onsemi 1n5221b-d.pdf Description: DIODE ZENER 16V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
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BAT54S-D87Z BAT54S-D87Z onsemi BAT54%28A%2CC%2CS%29.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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TN6726A_D26Z TN6726A_D26Z onsemi NZT6726.pdf Description: TRANS PNP 30V 1.5A TO226
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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FDMS8820 fdms8820-d.pdf
FDMS8820
Hersteller: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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3000+0.93 EUR
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FGH40T65UPD fgh40t65upd-d.pdf
FGH40T65UPD
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Produkt ist nicht verfügbar
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FXMHD103UMX FXMHD103_Rev_1.0.2.pdf
FXMHD103UMX
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FXWA9306L8X fxwa9306-d.pdf
FXWA9306L8X
Hersteller: onsemi
Description: IC TRANSLATOR BIDIR 8MICROPAK
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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HUF76633P3-F085
HUF76633P3-F085
Hersteller: onsemi
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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DFB2080 dfb2080-d.pdf
DFB2080
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
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4+5.37 EUR
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105+3.55 EUR
510+3 EUR
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DFB2040 dfb2080-d.pdf
DFB2040
Hersteller: onsemi
Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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FXL6408UMX fxl6408-d.pdf
FXL6408UMX
Hersteller: onsemi
Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
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5000+0.45 EUR
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FSBB30CH60CT fsbb30ch60c-d.pdf
FSBB30CH60CT
Hersteller: onsemi
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
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FSL137MRIN fsl137mrin-d.pdf
FSL137MRIN
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 30 W
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
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HUF76639S3ST-F085 huf76639s3s-d.pdf
HUF76639S3ST-F085
Hersteller: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMS030N06B fdms030n06b-d.pdf
FDMS030N06B
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
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3000+3 EUR
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FDMS8090 fdms8090-d.pdf
FDMS8090
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Produkt ist nicht verfügbar
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FDMC89521L fdmc89521l-d.pdf
FDMC89521L
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.9W (Ta), 16W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
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3000+1.68 EUR
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FDP053N08B-F102 fdp053n08b-d.pdf
FDP053N08B-F102
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 790 Stücke:
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4+5.65 EUR
10+3.68 EUR
50+2.82 EUR
100+2.53 EUR
500+2.06 EUR
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FDME820NZT fdme820nzt-d.pdf
FDME820NZT
Hersteller: onsemi
Description: MOSFET N-CH 20V 9A MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MicroFet 1.6x1.6 Thin
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
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AnzahlPrivatkunde
5000+0.67 EUR
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FDMF3030 fdmf3030-d.pdf
FDMF3030
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 900mOhm LS, 800mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMS86101A fdms86101a-d.pdf
FDMS86101A
Hersteller: onsemi
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
Produkt ist nicht verfügbar
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FDMS7678 fdms7678-d.pdf
FDMS7678
Hersteller: onsemi
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Produkt ist nicht verfügbar
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DFB25100 DFB2505-D.PDF
DFB25100
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
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FAN53600AUC33X fan53610-d.pdf
FAN53600AUC33X
Hersteller: onsemi
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
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FAN3227TMX-F085 FAN3229T_F085-D.PDF
FAN3227TMX-F085
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
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2500+1.36 EUR
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BR262AD001EVK br262-d.pdf
Hersteller: onsemi
Description: BOARD EVAL FOR BR262
Packaging: Bulk
Function: Audio Processing
Type: Audio
Contents: Board(s)
Utilized IC / Part: BR262
Primary Attributes: Noise-Cancelling
Produkt ist nicht verfügbar
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FDMS86200DC fdms86200dc-d.pdf
FDMS86200DC
Hersteller: onsemi
Description: MOSFET N-CH 150V 9.3A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V
Produkt ist nicht verfügbar
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FDMC86260 fdmc86260-d.pdf
FDMC86260
Hersteller: onsemi
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Produkt ist nicht verfügbar
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FOD8160R2 fod8160-d.pdf
FOD8160R2
Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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1000+3.68 EUR
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FOD8160 fod8160-d.pdf
FOD8160
Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
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FCH041N60F FCH041N60F-D.PDF
FCH041N60F
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V
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FDMS8333L fdms8333l-d.pdf
FDMS8333L
Hersteller: onsemi
Description: MOSFET N CH 40V 22A POWER 56
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDMS8333L fdms8333l-d.pdf
FDMS8333L
Hersteller: onsemi
Description: MOSFET N CH 40V 22A POWER 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
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FGD3N60UNDF fgd3n60undf-d.pdf
FGD3N60UNDF
Hersteller: onsemi
Description: IGBT NPT 600V 6A TO-252AA
Power - Max: 60 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 1.6 nC
Test Condition: 400V, 3A, 10Ohm, 15V
Switching Energy: 52µJ (on), 30µJ (off)
Td (on/off) @ 25°C: 5.5ns/22ns
IGBT Type: NPT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Reverse Recovery Time (trr): 21 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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QSB34CGR QSB34-D.PDF
QSB34CGR
Hersteller: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Gull Wing
Packaging: Tape & Reel (TR)
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1000+0.9 EUR
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NCS1002ADR2G ncs1002a-d.pdf
NCS1002ADR2G
Hersteller: onsemi
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
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LMV932DR2G lmv931-d.pdf
LMV932DR2G
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Produkt ist nicht verfügbar
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LMV932DR2G lmv931-d.pdf
LMV932DR2G
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
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NCS1002ADR2G ncs1002a-d.pdf
NCS1002ADR2G
Hersteller: onsemi
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
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LMV932DMR2G lmv931-d.pdf
LMV932DMR2G
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-MSOP
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
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LMV932DMR2G lmv931-d.pdf
LMV932DMR2G
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 1.8 V
Current - Output / Channel: 80 mA
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 1 mV
Current - Input Bias: 1 nA
Gain Bandwidth Product: 1.5 MHz
Slew Rate: 0.35V/µs
Current - Supply: 75µA (x2 Channels)
Operating Temperature: -40°C ~ 125°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
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TS391SN2T1G ts391-d.pdf
TS391SN2T1G
Hersteller: onsemi
Description: IC COMPARATOR 1CH 5-TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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3000+0.42 EUR
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TS391SN2T1G ts391-d.pdf
TS391SN2T1G
Hersteller: onsemi
Description: IC COMPARATOR 1CH 5-TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Number of Elements: 1
Type: Standard (General Purpose)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2V ~ 36V, ±1V ~ 18V
Supplier Device Package: 5-TSOP
Propagation Delay (Max): 850ns (Typ)
Current - Quiescent (Max): 1.25mA
Voltage - Input Offset (Max): 5mV @ 5V
Current - Input Bias (Max): 0.25µA @ 5V
Current - Output (Typ): 20mA
Grade: Automotive
Part Status: Active
Qualification: AEC-Q100
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22+0.96 EUR
31+0.68 EUR
35+0.61 EUR
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500+0.46 EUR
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NCS12802MNTXG
Hersteller: onsemi
Description: IC VIDEO VOLT REF GEN 24QFN
Packaging: Tape & Reel (TR)
Package / Case: 24-VFQFN Exposed Pad
Mounting Type: Surface Mount
Function: Gamma Reference
Voltage - Supply: 9V ~ 17.5V
Applications: Video Display
Supplier Device Package: 24-QFN (4x4)
Control Interface: I2C
Produkt ist nicht verfügbar
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NCS2584DTBR2G ncs2584-d.pdf
NCS2584DTBR2G
Hersteller: onsemi
Description: IC VIDEO DRIVER 14TSSOP
Packaging: Tape & Reel (TR)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
Produkt ist nicht verfügbar
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NCS2584DTBR2G ncs2584-d.pdf
NCS2584DTBR2G
Hersteller: onsemi
Description: IC VIDEO DRIVER 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Function: Driver
Voltage - Supply: 3.3V ~ 5V
Applications: Consumer Video
Supplier Device Package: 14-TSSOP
Control Interface: Parallel
Produkt ist nicht verfügbar
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NCS3402DR2G ncs3402-d.pdf
NCS3402DR2G
Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
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2500+0.65 EUR
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NCS3402DR2G ncs3402-d.pdf
NCS3402DR2G
Hersteller: onsemi
Description: IC COMPARATOR 2 GEN PUR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Open-Drain
Mounting Type: Surface Mount
Number of Elements: 2
Type: General Purpose
Operating Temperature: -40°C ~ 125°C
Voltage - Supply, Single/Dual (±): 2.5V ~ 16V
Supplier Device Package: 8-SOIC
Propagation Delay (Max): 220µs (Typ)
Current - Quiescent (Max): 640nA
Voltage - Input Offset (Max): 3.6mV @ 15V
Current - Input Bias (Max): 250pA @ 15V
Current - Output (Typ): 10mA
CMRR, PSRR (Typ): 88dB CMRR, 105dB PSRR
auf Bestellung 5168 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
8+2.68 EUR
13+1.63 EUR
25+1.36 EUR
100+1.06 EUR
250+0.9 EUR
500+0.81 EUR
1000+0.74 EUR
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NCS7301SN1T1G
Hersteller: onsemi
Description: IC OP AMP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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FDLL914B 1n914-d.pdf
FDLL914B
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
auf Bestellung 10223 Stücke:
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125+0.17 EUR
589+0.036 EUR
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KST3906MTF KST3906.pdf
KST3906MTF
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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FJX3904TF fjx3904-d.pdf
FJX3904TF
Hersteller: onsemi
Description: TRANS NPN 40V 0.2A SOT323
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 200 mA
Part Status: Obsolete
Supplier Device Package: SOT-323
Packaging: Cut Tape (CT)
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 5mA, 50mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Produkt ist nicht verfügbar
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BCW89 description BCW89.pdf
BCW89
Hersteller: onsemi
Description: TRANS PNP 60V 0.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 2mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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KST43MTF FAIRS47383-1.pdf?t.download=true&u=5oefqw
KST43MTF
Hersteller: onsemi
Description: TRANS NPN 200V 0.5A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 2mA, 20mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 30mA, 10V
Frequency - Transition: 50MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 200 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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FJX992TF fjx992-d.pdf
FJX992TF
Hersteller: onsemi
Description: TRANS PNP 120V 0.1A SOT-323
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 6V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-323
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 120 V
Power - Max: 235 mW
auf Bestellung 722 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
24+0.88 EUR
39+0.54 EUR
100+0.35 EUR
500+0.25 EUR
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MMSZ5255B MMSZ5227B.pdf
MMSZ5255B
Hersteller: onsemi
Description: DIODE ZENER 28V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 28 V
Impedance (Max) (Zzt): 44 Ohms
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 100 nA @ 21 V
Produkt ist nicht verfügbar
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MPSA05RA MPSA05%2CMMBTA05.pdf
MPSA05RA
Hersteller: onsemi
Description: TRANS NPN 60V 0.5A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 625 mW
auf Bestellung 46084 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
28+0.77 EUR
44+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.2 EUR
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1N5231CTR 1N5221B-D.PDF
1N5231CTR
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW DO35
Tolerance: ±2%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 200 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
auf Bestellung 85415 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
112+0.19 EUR
180+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
2000+0.065 EUR
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1N5243BTR 1N5221B-D.PDF
1N5243BTR
Hersteller: onsemi
Description: DIODE ZENER 13V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
auf Bestellung 64294 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
108+0.19 EUR
174+0.12 EUR
500+0.087 EUR
1000+0.076 EUR
2000+0.068 EUR
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1N5244BTR 1N5221B-D.PDF
1N5244BTR
Hersteller: onsemi
Description: DIODE ZENER 14V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 14 V
Impedance (Max) (Zzt): 15 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 10 V
auf Bestellung 46932 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
72+0.3 EUR
112+0.19 EUR
180+0.12 EUR
500+0.084 EUR
1000+0.074 EUR
2000+0.065 EUR
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1N5246BTR 1n5221b-d.pdf
1N5246BTR
Hersteller: onsemi
Description: DIODE ZENER 16V 500MW DO35
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 200 mA
Current - Reverse Leakage @ Vr: 100 nA @ 12 V
auf Bestellung 47046 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPrivatkunde
67+0.31 EUR
110+0.19 EUR
177+0.12 EUR
500+0.086 EUR
1000+0.075 EUR
2000+0.067 EUR
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BAT54S-D87Z BAT54%28A%2CC%2CS%29.pdf
BAT54S-D87Z
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Produkt ist nicht verfügbar
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TN6726A_D26Z NZT6726.pdf
TN6726A_D26Z
Hersteller: onsemi
Description: TRANS PNP 30V 1.5A TO226
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 Long Body (Formed Leads)
Mounting Type: Through Hole
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 1A, 1V
Supplier Device Package: TO-226
Part Status: Obsolete
Current - Collector (Ic) (Max): 1.5 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 1 W
Produkt ist nicht verfügbar
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