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FDMS3669S FDMS3669S onsemi fdms3669s-d.pdf Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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FDN537N FDN537N onsemi fdn537n-d.pdf Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FTCO3V455A1 FTCO3V455A1 onsemi ftco3v455a1-d.pdf Description: MOSFET 6N-CH 40V 150A MODULE
Supplier Device Package: Module
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A
Drain to Source Voltage (Vdss): 40V
Power - Max: 115W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Through Hole
Package / Case: 19-PowerDIP Module
Packaging: Tube
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FDPC8012S FDPC8012S onsemi fdpc8012s-d.pdf Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
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FAN3240TMX FAN3240TMX onsemi fan3240-d.pdf Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FAN3241TMX FAN3241TMX onsemi fan3240-d.pdf Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Part Status: Active
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NCL30160GEVB NCL30160GEVB onsemi ncl30160-d.pdf Description: EVAL BOARD FOR NCL30160
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: NCL30160
Current - Output / Channel: 1A
Voltage - Input: 6.3V ~ 40V
Features: Dimmable
Packaging: Bulk
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1N4148-T50R 1N4148-T50R onsemi 1N914-D.PDF Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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4N32SR2M 4N32SR2M onsemi H11B1M-D.pdf Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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BC516-D27Z BC516-D27Z onsemi BC516-D.PDF Description: TRANS PNP DARL 30V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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FDD2670 FDD2670 onsemi fdd2670-d.pdf Description: MOSFET N-CH 200V 3.6A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
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FDD3670 FDD3670 onsemi fdd3670-d.pdf Description: MOSFET N-CH 100V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V
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FDD3680 FDD3680 onsemi fdd3680-d.pdf Description: MOSFET N-CH 100V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 68W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDD5670 FDD5670 onsemi fdd5670-d.pdf Description: MOSFET N-CH 60V 52A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDLL485B FDLL485B onsemi FDLL485B-D.PDF Description: DIODE STANDARD 180V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
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FDMS8090 FDMS8090 onsemi fdms8090-d.pdf Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
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FJT44KTF FJT44KTF onsemi fjt44-d.pdf Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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FJV992FMTF FJV992FMTF onsemi fjv992-d.pdf Description: TRANS PNP 120V 0.05A SOT-23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FQD2N90TM FQD2N90TM onsemi fqu2n90tu_am002-d.pdf Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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FSA2267AL10X FSA2267AL10X onsemi Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
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FSA66P5X FSA66P5X onsemi FSA66.pdf Description: IC SWITCH SPST-NO X 1 SC70-5
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 6pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 0.05pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-5
-3db Bandwidth: 250MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FSB649 FSB649 onsemi fsb649-d.pdf Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
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HCPL0701R2 HCPL0701R2 onsemi hcpl0731-d.pdf Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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HGTD1N120BNS9A HGTD1N120BNS9A onsemi hgtd1n120bns-d.pdf Description: IGBT NPT 1200V 5.3A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
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KSB834WYTM KSB834WYTM onsemi ksb834w-d.pdf Description: TRANS PNP 60V 3A D2PAK
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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KST5550MTF KST5550MTF onsemi KST5550.pdf Description: TRANS NPN 140V 0.6A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBD2838 MMBD2838 onsemi FAIRS43961-1.pdf?t.download=true&u=5oefqw Description: DIODE ARRAY GP 75V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
Produkt ist nicht verfügbar
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MMBT5962 MMBT5962 onsemi mmbt5962-d.pdf Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MMSZ4688 MMSZ4688 onsemi Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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MMSZ5243B MMSZ5243B onsemi MMSZ5227B.pdf Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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NC7S08P5 NC7S08P5 onsemi ONSM-S-A0003587594-1.pdf?t.download=true&u=5oefqw Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7S32L6X NC7S32L6X onsemi nc7s32-d.pdf Description: IC GATE OR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7SZ04L6X NC7SZ04L6X onsemi NC7SZ04-D.PDF Description: IC INVERTER 1CH 1-INP 6MICROPAK
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
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NC7SZ332L6X NC7SZ332L6X onsemi nc7sz332-d.pdf Description: IC GATE OR 1CH 3-INP 6MICROPAK
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
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NZT44H8 NZT44H8 onsemi D44H8_NZT44H8.pdf Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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NZT45H8 NZT45H8 onsemi nzt45h8-d.pdf Description: TRANS PNP 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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NZT605 NZT605 onsemi nzt605-d.pdf Description: TRANS NPN DARL 110V 1.5A SOT-223
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 110 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-223-4
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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6N136SDM 6N136SDM onsemi HCPL2530M-D.PDF Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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FAN3214TMX FAN3214TMX onsemi ONSM-S-A0003539129-1.pdf?t.download=true&u=5oefqw Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 5A, 5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FAN3216TMX FAN3216TMX onsemi fan3217-d.pdf Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FAN4852IMU8X FAN4852IMU8X onsemi fan4852-d.pdf Description: IC CMOS 2 CIRCUIT 8MSOP
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 300 µV
Current - Input Bias: 0.1 pA
Gain Bandwidth Product: 9 MHz
Slew Rate: 6.1V/µs
Current - Supply: 900µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 90 mA
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FAN6921MLMY FAN6921MLMY onsemi fan6921ml-d.pdf Description: IC PFC CTRLR CRM 16SOP
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Startup: 10 µA
Part Status: Last Time Buy
Supplier Device Package: 16-SOIC
Mode: Critical Conduction (CRM)
Voltage - Supply: 8.5V ~ 25V
Operating Temperature: -40°C ~ 105°C
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FAN7085MX-GF085 FAN7085MX-GF085 onsemi fan7085_gf085-d.pdf Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 450mA, 450mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 65ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 300 V
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FAN73901MX FAN73901MX onsemi fan73901-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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FAN73932MX FAN73932MX onsemi fan73932-d.pdf Description: IC GATE DRVR HALF-BRIDGE 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
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FAN73933MX FAN73933MX onsemi fan73933-d.pdf Description: IC GATE DRVR HALF-BRIDGE 14SOP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
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FDD3N50NZTM FDD3N50NZTM onsemi fdd3n50nz-d.pdf Description: MOSFET N-CH 500V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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FDMS7608S FDMS7608S onsemi fdms7608s-d.pdf Description: MOSFET 2N-CH 30V 12A/15A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
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FQD2P40TM FQD2P40TM onsemi fqd2p40-d.pdf Description: MOSFET P-CH 400V 1.56A DPAK
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
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KSC5402DTF KSC5402DTF onsemi ksc5402dt-d.pdf Description: TRANS NPN 525V 2A TO252AA
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 525 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FAN5624UMPX FAN5624UMPX onsemi fan5626-d.pdf Description: IC LED DRV LIN SGL WR 10UMLP
Type: Linear
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: Single-Wire
Supplier Device Package: 10-UMLP (1.8x1.4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
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FDC5661N-F085 FDC5661N-F085 onsemi FDC5661N_F085-D.PDF Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SuperSOT™-6
Produkt ist nicht verfügbar
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FDN8601 FDN8601 onsemi fdn8601-d.pdf Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FDY302NZ FDY302NZ onsemi fdy302nz-d.pdf Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
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FPF1038UCX FPF1038UCX onsemi FAIRS46408-1.pdf?t.download=true&u=5oefqw Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
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FPF1204UCX FPF1204UCX onsemi fpf1204-d.pdf Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
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FSSD06UMX FSSD06UMX onsemi fssd06-d.pdf Description: IC MULTIPLEXER 24UMLP
DigiKey Programmable: Not Verified
Supplier Device Package: 24-UMLP (3.4x2.5)
Applications: Cell Phones, Digital Cameras, Media Players
Type: Multiplexer
Mounting Type: Surface Mount
Package / Case: 24-UFQFN
Packaging: Cut Tape (CT)
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FSUSB63UMX FSUSB63UMX onsemi FSUSB63-D.PDF Description: IC USB 2.0 SW & MUX 3:1 12-UMLP
Multiplexer/Demultiplexer Circuit: 3:1
Voltage - Supply, Single (V+): 2.7V ~ 4.4V
Supplier Device Package: 12-UMLP (1.8x1.8)
-3db Bandwidth: 830MHz
On-State Resistance (Max): 7.8Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Number of Channels: 1
Part Status: Last Time Buy
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LM431SBCM32X LM431SBCM32X onsemi lm431sa-d.pdf Description: IC VREF SHUNT ADJ 1% SOT23-3
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 1 mA
Part Status: Active
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: SOT-23-3
Operating Temperature: -25°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
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NC7SZ125FHX NC7SZ125FHX onsemi NC7SZ125-D.PDF Description: IC BUFF 1.65V 6-MICROPAK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 6-MicroPak2™
Part Status: Obsolete
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50+0.42 EUR
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FDMS3669S fdms3669s-d.pdf
FDMS3669S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/18A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1605pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 18A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
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FDN537N fdn537n-d.pdf
FDN537N
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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FTCO3V455A1 ftco3v455a1-d.pdf
FTCO3V455A1
Hersteller: onsemi
Description: MOSFET 6N-CH 40V 150A MODULE
Supplier Device Package: Module
FET Feature: Logic Level Gate
Rds On (Max) @ Id, Vgs: 1.66mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 150A
Drain to Source Voltage (Vdss): 40V
Power - Max: 115W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 175°C (TJ)
Configuration: 6 N-Channel (3-Phase Bridge)
Mounting Type: Through Hole
Package / Case: 19-PowerDIP Module
Packaging: Tube
Produkt ist nicht verfügbar
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FDPC8012S fdpc8012s-d.pdf
FDPC8012S
Hersteller: onsemi
Description: MOSFET 2N-CH 25V 13A PWRCLIP-33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW, 900mW
Drain to Source Voltage (Vdss): 25V
Current - Continuous Drain (Id) @ 25°C: 13A, 26A
Input Capacitance (Ciss) (Max) @ Vds: 1075pF @ 13V
Rds On (Max) @ Id, Vgs: 7mOhm @ 12A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 8nC @ 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Active
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FAN3240TMX fan3240-d.pdf
FAN3240TMX
Hersteller: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FAN3241TMX fan3240-d.pdf
FAN3241TMX
Hersteller: onsemi
Description: IC PWR DRIVER N-CHAN 1:1 8SOIC
Part Status: Active
Fault Protection: Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 8V ~ 60V
Input Type: Non-Inverting
Rds On (Typ): 1Ohm
Output Configuration: Low Side
Operating Temperature: -40°C ~ 105°C (TA)
Switch Type: Latched Driver
Interface: On/Off
Number of Outputs: 2
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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NCL30160GEVB ncl30160-d.pdf
NCL30160GEVB
Hersteller: onsemi
Description: EVAL BOARD FOR NCL30160
Contents: Board(s)
Part Status: Active
Outputs and Type: 1 Non-Isolated Output
Supplied Contents: Board(s)
Utilized IC / Part: NCL30160
Current - Output / Channel: 1A
Voltage - Input: 6.3V ~ 40V
Features: Dimmable
Packaging: Bulk
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1N4148-T50R 1N914-D.PDF
1N4148-T50R
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA DO35
Packaging: Cut Tape (CT)
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 4pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: DO-35
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 75 V
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4N32SR2M H11B1M-D.pdf
4N32SR2M
Hersteller: onsemi
Description: OPTOISO 4.17KV DARL W/BASE 6-SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Darlington with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 150mA
Voltage - Isolation: 4170Vrms
Current Transfer Ratio (Min): 500% @ 10mA
Vce Saturation (Max): 1V
Supplier Device Package: 6-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 5µs, 100µs (Max)
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 80 mA
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BC516-D27Z BC516-D.PDF
BC516-D27Z
Hersteller: onsemi
Description: TRANS PNP DARL 30V 1A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: PNP - Darlington
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1V @ 100µA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30000 @ 20mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 30 V
Power - Max: 625 mW
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FDD2670 fdd2670-d.pdf
FDD2670
Hersteller: onsemi
Description: MOSFET N-CH 200V 3.6A TO252
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 1228 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 43 nC @ 10 V
Drain to Source Voltage (Vdss): 200 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 70W (Tc)
Rds On (Max) @ Id, Vgs: 130mOhm @ 3.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.6A (Ta)
FET Type: N-Channel
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FDD3670 fdd3670-d.pdf
FDD3670
Hersteller: onsemi
Description: MOSFET N-CH 100V 34A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 34A (Ta)
Rds On (Max) @ Id, Vgs: 32mOhm @ 7.3A, 10V
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 80 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2490 pF @ 50 V
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FDD3680 fdd3680-d.pdf
FDD3680
Hersteller: onsemi
Description: MOSFET N-CH 100V 25A TO252
Input Capacitance (Ciss) (Max) @ Vds: 1735 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 53 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 68W (Ta)
Rds On (Max) @ Id, Vgs: 46mOhm @ 6.1A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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FDD5670 fdd5670-d.pdf
FDD5670
Hersteller: onsemi
Description: MOSFET N-CH 60V 52A TO252
Input Capacitance (Ciss) (Max) @ Vds: 2739 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.8W (Ta), 83W (Tc)
Rds On (Max) @ Id, Vgs: 15mOhm @ 10A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDLL485B FDLL485B-D.PDF
FDLL485B
Hersteller: onsemi
Description: DIODE STANDARD 180V 200MA SOD80
Packaging: Cut Tape (CT)
Package / Case: DO-213AC, MINI-MELF, SOD-80
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Standard
Capacitance @ Vr, F: 6pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-80
Operating Temperature - Junction: -65°C ~ 200°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 180 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 100 mA
Current - Reverse Leakage @ Vr: 25 nA @ 180 V
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70+0.3 EUR
113+0.19 EUR
500+0.14 EUR
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FDMS8090 fdms8090-d.pdf
FDMS8090
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
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FJT44KTF fjt44-d.pdf
FJT44KTF
Hersteller: onsemi
Description: TRANS NPN 400V 0.3A SOT-223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 50 @ 10mA, 10V
Supplier Device Package: SOT-223-4
Part Status: Active
Current - Collector (Ic) (Max): 300 mA
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 2 W
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FJV992FMTF fjv992-d.pdf
FJV992FMTF
Hersteller: onsemi
Description: TRANS PNP 120V 0.05A SOT-23-3
Power - Max: 300 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SOT-23-3
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 300 @ 1mA, 6V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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48+0.44 EUR
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124+0.17 EUR
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FQD2N90TM fqu2n90tu_am002-d.pdf
FQD2N90TM
Hersteller: onsemi
Description: MOSFET N-CH 900V 1.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.7A (Tc)
Rds On (Max) @ Id, Vgs: 7.2Ohm @ 850mA, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 500 pF @ 25 V
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FSA2267AL10X
FSA2267AL10X
Hersteller: onsemi
Description: IC SWITCH DUAL SPDT 10MICROPAK
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Voltage - Supply, Single (V+): 2.3V ~ 4.3V
Supplier Device Package: 10-MicroPak™
-3db Bandwidth: 45MHz
On-State Resistance (Max): 350mOhm (Typ)
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
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8+2.68 EUR
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FSA66P5X FSA66.pdf
FSA66P5X
Hersteller: onsemi
Description: IC SWITCH SPST-NO X 1 SC70-5
Number of Circuits: 1
Channel Capacitance (CS(off), CD(off)): 6pF
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NO
Charge Injection: 0.05pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-70-5
-3db Bandwidth: 250MHz
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
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FSB649 fsb649-d.pdf
FSB649
Hersteller: onsemi
Description: TRANS NPN 25V 3A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 1A, 2V
Frequency - Transition: 150MHz
Supplier Device Package: SOT-23-3
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 25 V
Power - Max: 500 mW
auf Bestellung 2868 Stücke:
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18+1.19 EUR
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HCPL0701R2 hcpl0731-d.pdf
HCPL0701R2
Hersteller: onsemi
Description: OPTOISO 2.5KV DARL W/BASE 8-SOIC
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Part Status: Active
Turn On / Turn Off Time (Typ): 300ns, 1.6µs
Voltage - Output (Max): 18V
Supplier Device Package: 8-SOIC
Current Transfer Ratio (Max): 2600% @ 1.6mA
Current Transfer Ratio (Min): 500% @ 1.6mA
Voltage - Isolation: 2500Vrms
Current - Output / Channel: 60mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.25V
Operating Temperature: -40°C ~ 85°C
Mounting Type: Surface Mount
Output Type: Darlington with Base
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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5+4.9 EUR
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HGTD1N120BNS9A hgtd1n120bns-d.pdf
HGTD1N120BNS9A
Hersteller: onsemi
Description: IGBT NPT 1200V 5.3A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.9V @ 15V, 1A
Supplier Device Package: TO-252AA
IGBT Type: NPT
Td (on/off) @ 25°C: 15ns/67ns
Switching Energy: 70µJ (on), 90µJ (off)
Test Condition: 960V, 1A, 82Ohm, 15V
Gate Charge: 14 nC
Part Status: Active
Current - Collector (Ic) (Max): 5.3 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 6 A
Power - Max: 60 W
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5+4.21 EUR
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KSB834WYTM ksb834w-d.pdf
KSB834WYTM
Hersteller: onsemi
Description: TRANS PNP 60V 3A D2PAK
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 3 A
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Frequency - Transition: 9MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 5mA, 5V
Current - Collector Cutoff (Max): 100µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 300mA, 3A
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
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13+1.71 EUR
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KST5550MTF KST5550.pdf
KST5550MTF
Hersteller: onsemi
Description: TRANS NPN 140V 0.6A SOT-23-3
Power - Max: 350 mW
Voltage - Collector Emitter Breakdown (Max): 140 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Obsolete
Supplier Device Package: SOT-23-3
Frequency - Transition: 300MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 10mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 5mA, 50mA
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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MMBD2838 FAIRS43961-1.pdf?t.download=true&u=5oefqw
MMBD2838
Hersteller: onsemi
Description: DIODE ARRAY GP 75V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA
Supplier Device Package: SOT-23-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 50 V
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MMBT5962 mmbt5962-d.pdf
MMBT5962
Hersteller: onsemi
Description: TRANS NPN 45V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 500µA, 10mA
Current - Collector Cutoff (Max): 2nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 600 @ 10mA, 5V
Supplier Device Package: SOT-23-3
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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MMSZ4688
MMSZ4688
Hersteller: onsemi
Description: DIODE ZENER 4.7V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Supplier Device Package: SOD-123
Part Status: Obsolete
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 10 µA @ 3 V
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MMSZ5243B MMSZ5227B.pdf
MMSZ5243B
Hersteller: onsemi
Description: DIODE ZENER 13V 500MW SOD123
Tolerance: ±5%
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 13 V
Impedance (Max) (Zzt): 13 Ohms
Supplier Device Package: SOD-123
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 500 nA @ 9.9 V
Produkt ist nicht verfügbar
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NC7S08P5 ONSM-S-A0003587594-1.pdf?t.download=true&u=5oefqw
NC7S08P5
Hersteller: onsemi
Description: IC GATE AND 1CH 2-INP SC70-5
Packaging: Cut Tape (CT)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Mounting Type: Surface Mount
Logic Type: AND Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: SC-70-5
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
Produkt ist nicht verfügbar
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NC7S32L6X nc7s32-d.pdf
NC7S32L6X
Hersteller: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: OR Gate
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 2V ~ 6V
Current - Output High, Low: 2.6mA, 2.6mA
Number of Inputs: 2
Supplier Device Package: 6-MicroPak
Input Logic Level - High: 1.5V
Input Logic Level - Low: 0.5V
Max Propagation Delay @ V, Max CL: 17ns @ 6V, 50pF
Part Status: Obsolete
Number of Circuits: 1
Current - Quiescent (Max): 1 µA
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NC7SZ04L6X NC7SZ04-D.PDF
NC7SZ04L6X
Hersteller: onsemi
Description: IC INVERTER 1CH 1-INP 6MICROPAK
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
Mounting Type: Surface Mount
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 4.3ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 1
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: Inverter
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NC7SZ332L6X nc7sz332-d.pdf
NC7SZ332L6X
Hersteller: onsemi
Description: IC GATE OR 1CH 3-INP 6MICROPAK
Current - Quiescent (Max): 2 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-MicroPak
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Logic Type: OR Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Cut Tape (CT)
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NZT44H8 D44H8_NZT44H8.pdf
NZT44H8
Hersteller: onsemi
Description: TRANS NPN 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 50MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NZT45H8 nzt45h8-d.pdf
NZT45H8
Hersteller: onsemi
Description: TRANS PNP 60V 8A SOT223-4
Power - Max: 1.5 W
Voltage - Collector Emitter Breakdown (Max): 60 V
Current - Collector (Ic) (Max): 8 A
Part Status: Obsolete
Supplier Device Package: SOT-223-4
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 4A, 1V
Current - Collector Cutoff (Max): 10µA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 400mA, 8A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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NZT605 nzt605-d.pdf
NZT605
Hersteller: onsemi
Description: TRANS NPN DARL 110V 1.5A SOT-223
Power - Max: 1 W
Voltage - Collector Emitter Breakdown (Max): 110 V
Current - Collector (Ic) (Max): 1.5 A
Supplier Device Package: SOT-223-4
Frequency - Transition: 150MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 1A, 5V
Current - Collector Cutoff (Max): 10nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 1mA, 1A
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN - Darlington
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 14397 Stücke:
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14+1.51 EUR
23+0.94 EUR
100+0.61 EUR
500+0.46 EUR
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6N136SDM HCPL2530M-D.PDF
6N136SDM
Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 1059 Stücke:
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7+3.31 EUR
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FAN3214TMX ONSM-S-A0003539129-1.pdf?t.download=true&u=5oefqw
FAN3214TMX
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 5A, 5A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 300669 Stücke:
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FAN3216TMX fan3217-d.pdf
FAN3216TMX
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Synchronous
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
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FAN4852IMU8X fan4852-d.pdf
FAN4852IMU8X
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8MSOP
Number of Circuits: 2
Supplier Device Package: 8-MSOP
Voltage - Input Offset: 300 µV
Current - Input Bias: 0.1 pA
Gain Bandwidth Product: 9 MHz
Slew Rate: 6.1V/µs
Current - Supply: 900µA
Operating Temperature: -40°C ~ 85°C
Amplifier Type: CMOS
Mounting Type: Surface Mount
Output Type: Rail-to-Rail
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Packaging: Cut Tape (CT)
Voltage - Supply Span (Max): 5 V
Voltage - Supply Span (Min): 2.5 V
Current - Output / Channel: 90 mA
Produkt ist nicht verfügbar
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FAN6921MLMY fan6921ml-d.pdf
FAN6921MLMY
Hersteller: onsemi
Description: IC PFC CTRLR CRM 16SOP
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Startup: 10 µA
Part Status: Last Time Buy
Supplier Device Package: 16-SOIC
Mode: Critical Conduction (CRM)
Voltage - Supply: 8.5V ~ 25V
Operating Temperature: -40°C ~ 105°C
auf Bestellung 5000 Stücke:
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4+5.51 EUR
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1000+1.73 EUR
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FAN7085MX-GF085 fan7085_gf085-d.pdf
FAN7085MX-GF085
Hersteller: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 450mA, 450mA
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 65ns, 25ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 300 V
Input Type: Inverting
Voltage - Supply: 4.5V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3533 Stücke:
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FAN73901MX fan73901-d.pdf
FAN73901MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 25ns, 20ns
Channel Type: Independent
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Last Time Buy
DigiKey Programmable: Not Verified
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6+3.97 EUR
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FAN73932MX fan73932-d.pdf
FAN73932MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Synchronous
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 203 Stücke:
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5+4.65 EUR
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FAN73933MX fan73933-d.pdf
FAN73933MX
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 40ns, 20ns
Supplier Device Package: 14-SOP
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 10654 Stücke:
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4+6.12 EUR
10+3.92 EUR
25+3.33 EUR
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1000+2 EUR
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FDD3N50NZTM fdd3n50nz-d.pdf
FDD3N50NZTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 2.5A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 280 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 8 nC @ 10 V
Drain to Source Voltage (Vdss): 500 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.25A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FDMS7608S fdms7608s-d.pdf
FDMS7608S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/15A POWER56
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1510pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 15A
auf Bestellung 26301 Stücke:
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10+2.31 EUR
12+1.88 EUR
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FQD2P40TM fqd2p40-d.pdf
FQD2P40TM
Hersteller: onsemi
Description: MOSFET P-CH 400V 1.56A DPAK
Packaging: Cut Tape (CT)
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Drain to Source Voltage (Vdss): 400 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 38W (Tc)
Rds On (Max) @ Id, Vgs: 6.5Ohm @ 780mA, 10V
Current - Continuous Drain (Id) @ 25°C: 1.56A (Tc)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Input Capacitance (Ciss) (Max) @ Vds: 350 pF @ 25 V
auf Bestellung 4902 Stücke:
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8+2.95 EUR
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KSC5402DTF ksc5402dt-d.pdf
KSC5402DTF
Hersteller: onsemi
Description: TRANS NPN 525V 2A TO252AA
Power - Max: 30 W
Voltage - Collector Emitter Breakdown (Max): 525 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: TO-252AA
Frequency - Transition: 11MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 6 @ 1A, 1V
Current - Collector Cutoff (Max): 250µA
Vce Saturation (Max) @ Ib, Ic: 750mV @ 200mA, 1A
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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FAN5624UMPX fan5626-d.pdf
FAN5624UMPX
Hersteller: onsemi
Description: IC LED DRV LIN SGL WR 10UMLP
Type: Linear
Number of Outputs: 4
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Cut Tape (CT)
Voltage - Supply (Max): 5.5V
Voltage - Supply (Min): 2.7V
Dimming: Single-Wire
Supplier Device Package: 10-UMLP (1.8x1.4)
Internal Switch(s): Yes
Current - Output / Channel: 30mA
Applications: Backlight
Operating Temperature: -40°C ~ 85°C (TA)
auf Bestellung 4177 Stücke:
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7+3.09 EUR
12+1.89 EUR
25+1.58 EUR
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500+0.95 EUR
1000+0.87 EUR
2500+0.77 EUR
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FDC5661N-F085 FDC5661N_F085-D.PDF
FDC5661N-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 4.3A SUPERSOT6
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.6W (Ta)
Rds On (Max) @ Id, Vgs: 47mOhm @ 4.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.3A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 763 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 19 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Grade: Automotive
Supplier Device Package: SuperSOT™-6
Produkt ist nicht verfügbar
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FDN8601 fdn8601-d.pdf
FDN8601
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 11469 Stücke:
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12+1.8 EUR
19+1.12 EUR
100+0.73 EUR
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FDY302NZ fdy302nz-d.pdf
FDY302NZ
Hersteller: onsemi
Description: MOSFET N-CH 20V 600MA SC89-3
Rds On (Max) @ Id, Vgs: 300mOhm @ 600mA, 4.5V
Current - Continuous Drain (Id) @ 25°C: 600mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-89, SOT-490
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 60 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.1 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SC-89-3
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Power Dissipation (Max): 625mW (Ta)
auf Bestellung 6386 Stücke:
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32+0.67 EUR
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100+0.32 EUR
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FPF1038UCX FAIRS46408-1.pdf?t.download=true&u=5oefqw
FPF1038UCX
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 6WLCSP
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12+1.84 EUR
13+1.62 EUR
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FPF1204UCX fpf1204-d.pdf
FPF1204UCX
Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Packaging: Cut Tape (CT)
Features: Load Discharge, Slew Rate Controlled
Package / Case: 4-UFBGA, WLCSP
Output Type: P-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: General Purpose
Operating Temperature: -40°C ~ 85°C (TA)
Output Configuration: High Side
Rds On (Typ): 45mOhm
Input Type: Non-Inverting
Voltage - Load: 1.2V ~ 5.5V
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 2.2A
Ratio - Input:Output: 1:1
Supplier Device Package: 4-WLCSP (0.76x0.76)
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23+0.94 EUR
32+0.67 EUR
35+0.6 EUR
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500+0.46 EUR
1000+0.44 EUR
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FSSD06UMX fssd06-d.pdf
FSSD06UMX
Hersteller: onsemi
Description: IC MULTIPLEXER 24UMLP
DigiKey Programmable: Not Verified
Supplier Device Package: 24-UMLP (3.4x2.5)
Applications: Cell Phones, Digital Cameras, Media Players
Type: Multiplexer
Mounting Type: Surface Mount
Package / Case: 24-UFQFN
Packaging: Cut Tape (CT)
auf Bestellung 7834 Stücke:
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4+6.22 EUR
10+3.95 EUR
25+3.36 EUR
100+2.69 EUR
250+2.36 EUR
500+2.15 EUR
1000+1.99 EUR
2500+1.83 EUR
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FSUSB63UMX FSUSB63-D.PDF
FSUSB63UMX
Hersteller: onsemi
Description: IC USB 2.0 SW & MUX 3:1 12-UMLP
Multiplexer/Demultiplexer Circuit: 3:1
Voltage - Supply, Single (V+): 2.7V ~ 4.4V
Supplier Device Package: 12-UMLP (1.8x1.8)
-3db Bandwidth: 830MHz
On-State Resistance (Max): 7.8Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Number of Channels: 1
Part Status: Last Time Buy
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15+1.43 EUR
21+1.02 EUR
25+0.92 EUR
100+0.81 EUR
250+0.75 EUR
500+0.71 EUR
1000+0.69 EUR
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LM431SBCM32X lm431sa-d.pdf
LM431SBCM32X
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 1% SOT23-3
Voltage - Output (Max): 36 V
Current - Output: 100 mA
Current - Cathode: 1 mA
Part Status: Active
Voltage - Output (Min/Fixed): 2.495V
Supplier Device Package: SOT-23-3
Operating Temperature: -25°C ~ 85°C (TA)
Reference Type: Shunt
Mounting Type: Surface Mount
Output Type: Adjustable
Temperature Coefficient: 50ppm/°C Typical
Package / Case: TO-236-3, SC-59, SOT-23-3
Tolerance: ±1%
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NC7SZ125FHX NC7SZ125-D.PDF
NC7SZ125FHX
Hersteller: onsemi
Description: IC BUFF 1.65V 6-MICROPAK2
Packaging: Cut Tape (CT)
Package / Case: 6-UFDFN
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 1.65V ~ 5.5V
Number of Bits per Element: 1
Current - Output High, Low: 32mA, 32mA
Supplier Device Package: 6-MicroPak2™
Part Status: Obsolete
auf Bestellung 635 Stücke:
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AnzahlPrivatkunde
50+0.42 EUR
73+0.29 EUR
82+0.26 EUR
100+0.21 EUR
250+0.2 EUR
500+0.19 EUR
Mindestbestellmenge: 50 Stücke
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