| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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FCD600N60Z | onsemi |
 Description: MOSFET N-CH 600V 7.4A DPAKPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V |
auf Bestellung 12500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ86530L | onsemi |
Description: MOSFET 4N-CH 60V 8A 12MLP Packaging: Tape & Reel (TR) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 4 N-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.9W Drain to Source Voltage (Vdss): 60V Current - Continuous Drain (Id) @ 25°C: 8A Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 12-MLP (5x4.5) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FCD380N60E | onsemi |
Description: MOSFET N-CH 600V 10.2A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc) Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V Power Dissipation (Max): 106W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD770N15A | onsemi |
Description: MOSFET N CH 150V 18A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Tc) Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V Power Dissipation (Max): 56.8W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6821A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFN Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS Current - Output / Channel: 60A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB38N30U | onsemi |
Description: MOSFET N CH 300V 38A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V |
auf Bestellung 3200 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH041N60E | onsemi |
Description: MOSFET N-CH 600V 77A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 77A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V Power Dissipation (Max): 592W (Tc) Vgs(th) (Max) @ Id: 3.5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V |
auf Bestellung 731 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA1430JP | onsemi |
Description: FET/BJT NPN/P CH 30V 2.9A MICROF Supplier Device Package: 6-MicroFET (2x2) Applications: Load Switch Transistor Type: NPN, P-Channel Mounting Type: Surface Mount Current Rating (Amps): 2.9A Package / Case: 6-VDFN Exposed Pad Voltage - Rated: 30V Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FGH50T65UPD | onsemi |
Description: IGBT TRENCH FS 650V 100A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 53 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 32ns/160ns Switching Energy: 2.7mJ (on), 740µJ (off) Test Condition: 400V, 50A, 6Ohm, 15V Gate Charge: 230 nC Part Status: Not For New Designs Current - Collector (Ic) (Max): 100 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 150 A Power - Max: 340 W |
auf Bestellung 223 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8318R2 | onsemi |
Description: OPTOISO 4.243KV 1CH GT DVR 16SO Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) Voltage - Output Supply: 15V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 300ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 34ns, 34ns Supplier Device Package: 16-SO Approval Agency: UL Voltage - Isolation: 4243Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 750 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD8318V | onsemi |
Description: OPTOISO 4.243KV 1CH GT DVR 16SO Approval Agency: IEC/EN/DIN, UL Voltage - Output Supply: 15V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 300ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 34ns, 34ns Supplier Device Package: 16-SO Voltage - Isolation: 4243Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD8318 | onsemi |
Description: OPTOISO 4.243KV 1CH GT DVR 16SO Voltage - Output Supply: 15V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 300ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 34ns, 34ns Supplier Device Package: 16-SO Approval Agency: UL Voltage - Isolation: 4243Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tube |
auf Bestellung 2970 Stücke: Lieferzeit 10-14 Tag (e) |
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FGAF40N60SMD | onsemi |
Description: IGBT FIELD STOP 600V 80A TO-3PF Packaging: Tube Package / Case: TO-3P-3 Full Pack Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 36 ns Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A Supplier Device Package: TO-3PF IGBT Type: Field Stop Td (on/off) @ 25°C: 12ns/92ns Switching Energy: 870µJ (on), 260µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 119 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector Pulsed (Icm): 120 A Power - Max: 115 W |
auf Bestellung 258 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD4N60NZ | onsemi |
Description: MOSFET N-CH 600V 3.4A DPAK Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±25V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 114W (Tc) Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD8321R2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD8321R2 | onsemi |
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP Voltage - Output Supply: 16V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 300ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 60ns, 60ns Supplier Device Package: 5-SOP Approval Agency: UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2A, 2A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMC86248 | onsemi |
Description: MOSFET N CH 150V 3.4A POWER33 Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: Power33 Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Vgs(th) (Max) @ Id: 4V @ 250mA Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH30S130P | onsemi |
Description: IGBT TRENCH FS 1300V 60A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Gate Charge: 78 nC Part Status: Obsolete Current - Collector (Ic) (Max): 60 A Voltage - Collector Emitter Breakdown (Max): 1300 V Current - Collector Pulsed (Icm): 90 A Power - Max: 500 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMA8878 | onsemi |
Description: MOSFET N-CH 30V 9A/10A 6MICROFET Packaging: Tape & Reel (TR) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc) Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V Power Dissipation (Max): 2.4W (Ta) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 6-MicroFET (2x2) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA25S125P | onsemi |
Description: IGBT 1250V 50A 250W TO-3PN Power - Max: 250 W Current - Collector Pulsed (Icm): 75 A Voltage - Collector Emitter Breakdown (Max): 1250 V Current - Collector (Ic) (Max): 50 A Part Status: Obsolete Gate Charge: 204 nC IGBT Type: Trench Field Stop Supplier Device Package: TO-3PN Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A Input Type: Standard Mounting Type: Through Hole Package / Case: TO-3P-3, SC-65-3 Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMC7208S | onsemi |
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Drain to Source Voltage (Vdss): 30V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FFH75H60S | onsemi |
Description: DIODE STANDARD 600V 75A TO2472 Packaging: Tube Package / Case: TO-247-2 Mounting Type: Through Hole Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 75 ns Technology: Standard Current - Average Rectified (Io): 75A Supplier Device Package: TO-247-2 Operating Temperature - Junction: -65°C ~ 175°C Voltage - DC Reverse (Vr) (Max): 600 V Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 75 A Current - Reverse Leakage @ Vr: 100 µA @ 600 V |
auf Bestellung 878 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8327L | onsemi |
Description: MOSFET N-CH 40V 12A/14A 8MLP Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.3W (Ta), 30W (Tc) |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8321V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 5SOP Voltage - Output Supply: 16V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Pulse Width Distortion (Max): 300ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 60ns, 60ns Supplier Device Package: 5-SOP Approval Agency: IEC/EN/DIN, UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2A, 2A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads Packaging: Tube |
auf Bestellung 2000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8820 | onsemi |
Description: MOSFET N-CH 30V 28A/116A 8PQFN Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH40T65UPD | onsemi |
Description: IGBT TRENCH FS 650V 80A TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 43 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 20ns/144ns Switching Energy: 1.59mJ (on), 580µJ (off) Test Condition: 400V, 40A, 7Ohm, 15V Gate Charge: 177 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FXMHD103UMX | onsemi |
Description: IC INTERFACE SPECIALIZED 12UMLP Supplier Device Package: 12-UMLP (1.8x1.8) Applications: Cell Phones, Digital Cameras, Media Players Voltage - Supply: 1.6V ~ 3.6V Mounting Type: Surface Mount Package / Case: 12-UFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FXWA9306L8X | onsemi |
Description: IC TRANSLATOR BIDIR 8MICROPAK Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) Package / Case: 8-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 8-MicroPak™ Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 2 Voltage - VCCA: 1 V ~ 5.5 V Voltage - VCCB: 1.8 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
auf Bestellung 90000 Stücke: Lieferzeit 10-14 Tag (e) |
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HUF76633P3-F085 | onsemi |
Description: MOSFET N-CH 100V 39A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 39A (Tc) Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V Power Dissipation (Max): 145W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: TO-220-3 Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±16V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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DFB2080 | onsemi |
Description: BRIDGE RECT 1PHASE 800V 20A TS6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 800 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 800 V |
auf Bestellung 1200 Stücke: Lieferzeit 10-14 Tag (e) |
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DFB2040 | onsemi |
Description: BRIDGE RECT 1P 400V 20A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 400 V Current - Average Rectified (Io): 20 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A Current - Reverse Leakage @ Vr: 10 µA @ 400 V |
auf Bestellung 1040 Stücke: Lieferzeit 10-14 Tag (e) |
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FXL6408UMX | onsemi |
Description: IC XPNDR 400KHZ I2C 16UMLP Features: POR Packaging: Tape & Reel (TR) Package / Case: 16-UFQFN Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 4V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 16-UMLP (1.8x2.6) Current - Output Source/Sink: 6mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 60000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSBB30CH60CT | onsemi |
Description: IGBT IPM 600V 30A 27-PWRDIP MOD Packaging: Tube Package / Case: 27-PowerDIP Module (1.205", 30.60mm) Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2500Vrms Part Status: Obsolete Current: 30 A Voltage: 600 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FSL137MRIN | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8DIP Power (Watts): 30 W Part Status: Active Voltage - Start Up: 12 V Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-DIP Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V Topology: Flyback Output Isolation: Isolated Voltage - Breakdown: 700V Internal Switch(s): Yes Frequency - Switching: 67kHz Duty Cycle: 67% Operating Temperature: -40°C ~ 125°C (TJ) Mounting Type: Through Hole Package / Case: 8-DIP (0.300", 7.62mm) Packaging: Tube |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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HUF76639S3ST-F085 | onsemi |
Description: MOSFET N CH 100V 51A TO-263AB Qualification: AEC-Q101 Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±16V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Obsolete Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 180W (Tc) Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V Current - Continuous Drain (Id) @ 25°C: 51A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS030N06B | onsemi |
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8090 | onsemi |
Description: MOSFET 2N-CH 100V 10A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.2W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (5x6), Power56 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMC89521L | onsemi |
Description: MOSFET 2N-CH 60V 8.2A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 1.9W (Ta), 16W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP053N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 75A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 146W (Tc) Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FDME820NZT | onsemi |
Description: MOSFET N-CH 20V 9A MICROFET Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V Drain to Source Voltage (Vdss): 20 V Vgs (Max): ±12V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: MicroFet 1.6x1.6 Thin Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.1W (Ta) Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF3030 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Part Status: Last Time Buy Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 24V Technology: DrMOS Current - Output / Channel: 50A Applications: Synchronous Buck Converters Rds On (Typ): 900mOhm LS, 800mOhm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS86101A | onsemi |
Description: MOSFET N-CH 100V 13A/60A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS7678 | onsemi |
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V Power Dissipation (Max): 2.3W (Ta), 41W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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DFB25100 | onsemi |
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P Packaging: Tube Package / Case: 4-SIP, TS-6P Mounting Type: Through Hole Diode Type: Single Phase Operating Temperature: -55°C ~ 150°C (TJ) Technology: Standard Supplier Device Package: TS-6P Voltage - Peak Reverse (Max): 1 kV Current - Average Rectified (Io): 25 A Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A Current - Reverse Leakage @ Vr: 10 µA @ 1000 V |
auf Bestellung 2351 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN53600AUC33X | onsemi |
Description: IC REG BUCK 3.3V 600MA 6WLCSP Part Status: Last Time Buy Voltage - Output (Min/Fixed): 3.3V Voltage - Input (Min): 2.3V Synchronous Rectifier: Yes Supplier Device Package: 6-WLCSP (1.23x0.88) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 600mA Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN3227TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC DigiKey Programmable: Not Verified Qualification: AEC-Q100 Grade: Automotive Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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| BR262AD001EVK | onsemi |
Description: BOARD EVAL FOR BR262 Packaging: Bulk Function: Audio Processing Type: Audio Contents: Board(s) Utilized IC / Part: BR262 Primary Attributes: Noise-Cancelling |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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FDMS86200DC | onsemi |
Description: MOSFET N-CH 150V 9.3A DLCOOL56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc) Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMC86260 | onsemi |
Description: MOSFET N CH 150V 5.4A POWER 33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FOD8160R2 | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP Packaging: Tape & Reel (TR) Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 22ns, 9ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8160 | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP Packaging: Tube Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Output Type: Open Collector, Schottky Clamped Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 25mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 5-SOP Rise / Fall Time (Typ): 22ns, 9ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 1804 Stücke: Lieferzeit 10-14 Tag (e) |
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FCH041N60F | onsemi |
Description: MOSFET N-CH 600V 76A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 76A (Tc) Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V Power Dissipation (Max): 595W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-247-3 Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V |
auf Bestellung 2981 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8333L | onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS8333L | onsemi |
Description: MOSFET N CH 40V 22A POWER 56 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) |
auf Bestellung 2189 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3N60UNDF | onsemi |
Description: IGBT NPT 600V 6A TO-252AA Power - Max: 60 W Current - Collector Pulsed (Icm): 9 A Voltage - Collector Emitter Breakdown (Max): 600 V Current - Collector (Ic) (Max): 6 A Gate Charge: 1.6 nC Test Condition: 400V, 3A, 10Ohm, 15V Switching Energy: 52µJ (on), 30µJ (off) Td (on/off) @ 25°C: 5.5ns/22ns IGBT Type: NPT Supplier Device Package: TO-252AA Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A Reverse Recovery Time (trr): 21 ns Input Type: Standard Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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QSB34CGR | onsemi |
Description: SENSOR PHOTODIODE 940NM 2SMD GW Voltage - DC Reverse (Vr) (Max): 32 V Part Status: Active Current - Dark (Typ): 30nA Active Area: 6.5mm² Spectral Range: 400nm ~ 1100nm Viewing Angle: 120° Response Time: 50ns Operating Temperature: -25°C ~ 85°C Diode Type: Pin Mounting Type: Surface Mount Wavelength: 940nm Package / Case: 2-SMD, Gull Wing Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS1002ADR2G | onsemi |
Description: IC SECONDARY-SIDE CTRLR 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 32V Applications: Secondary-Side Controller Current - Supply: 200µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 7690 Stücke: Lieferzeit 10-14 Tag (e) |
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LMV932DR2G | onsemi |
Description: IC CMOS 2 CIRCUIT 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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LMV932DR2G | onsemi |
Description: IC CMOS 2 CIRCUIT 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Output Type: Rail-to-Rail Mounting Type: Surface Mount Amplifier Type: CMOS Operating Temperature: -40°C ~ 125°C Current - Supply: 75µA (x2 Channels) Slew Rate: 0.35V/µs Gain Bandwidth Product: 1.5 MHz Current - Input Bias: 1 nA Voltage - Input Offset: 1 mV Supplier Device Package: 8-SOIC Number of Circuits: 2 Current - Output / Channel: 80 mA Voltage - Supply Span (Min): 1.8 V Voltage - Supply Span (Max): 5 V |
auf Bestellung 172 Stücke: Lieferzeit 10-14 Tag (e) |
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NCS1002ADR2G | onsemi |
Description: IC SECONDARY-SIDE CTRLR 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C Voltage - Supply: 3V ~ 32V Applications: Secondary-Side Controller Current - Supply: 200µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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| FCD600N60Z |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
Description: MOSFET N-CH 600V 7.4A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
Rds On (Max) @ Id, Vgs: 600mOhm @ 3.7A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1120 pF @ 25 V
auf Bestellung 12500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.58 EUR |
| 5000+ | 1.56 EUR |
| FDMQ86530L |
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Hersteller: onsemi
Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Description: MOSFET 4N-CH 60V 8A 12MLP
Packaging: Tape & Reel (TR)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 4 N-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.9W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 8A
Input Capacitance (Ciss) (Max) @ Vds: 2295pF @ 30V
Rds On (Max) @ Id, Vgs: 17.5mOhm @ 8A, 10V
Gate Charge (Qg) (Max) @ Vgs: 33nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FCD380N60E |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
Description: MOSFET N-CH 600V 10.2A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10.2A (Tc)
Rds On (Max) @ Id, Vgs: 380mOhm @ 5A, 10V
Power Dissipation (Max): 106W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1770 pF @ 25 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.99 EUR |
| FDD770N15A |
|
Hersteller: onsemi
Description: MOSFET N CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
Description: MOSFET N CH 150V 18A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Tc)
Rds On (Max) @ Id, Vgs: 77mOhm @ 12A, 10V
Power Dissipation (Max): 56.8W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 765 pF @ 75 V
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.86 EUR |
| FDMF6821A |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 4.41 EUR |
| FDB38N30U |
|
Hersteller: onsemi
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
auf Bestellung 3200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 2.98 EUR |
| 1600+ | 2.84 EUR |
| FCH041N60E |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 77A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V
Power Dissipation (Max): 592W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V
Description: MOSFET N-CH 600V 77A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 77A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 39A, 10V
Power Dissipation (Max): 592W (Tc)
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 380 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13700 pF @ 100 V
auf Bestellung 731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 25.79 EUR |
| 30+ | 15.74 EUR |
| 120+ | 13.54 EUR |
| 510+ | 13.28 EUR |
| FDMA1430JP |
|
Hersteller: onsemi
Description: FET/BJT NPN/P CH 30V 2.9A MICROF
Supplier Device Package: 6-MicroFET (2x2)
Applications: Load Switch
Transistor Type: NPN, P-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 2.9A
Package / Case: 6-VDFN Exposed Pad
Voltage - Rated: 30V
Packaging: Tape & Reel (TR)
Description: FET/BJT NPN/P CH 30V 2.9A MICROF
Supplier Device Package: 6-MicroFET (2x2)
Applications: Load Switch
Transistor Type: NPN, P-Channel
Mounting Type: Surface Mount
Current Rating (Amps): 2.9A
Package / Case: 6-VDFN Exposed Pad
Voltage - Rated: 30V
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH50T65UPD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/160ns
Switching Energy: 2.7mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 230 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 340 W
Description: IGBT TRENCH FS 650V 100A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 53 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 50A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 32ns/160ns
Switching Energy: 2.7mJ (on), 740µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 230 nC
Part Status: Not For New Designs
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 340 W
auf Bestellung 223 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 13.99 EUR |
| 30+ | 8.09 EUR |
| 120+ | 7.27 EUR |
| FOD8318R2 |
|
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Produkt ist nicht verfügbar
Mindestbestellmenge: 750 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD8318V |
|
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Approval Agency: IEC/EN/DIN, UL
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8318 |
|
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tube
auf Bestellung 2970 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.53 EUR |
| 10+ | 11.98 EUR |
| 100+ | 9.9 EUR |
| 500+ | 8.68 EUR |
| 1000+ | 8.2 EUR |
| 2000+ | 8.01 EUR |
| FGAF40N60SMD |
|
Hersteller: onsemi
Description: IGBT FIELD STOP 600V 80A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 115 W
Description: IGBT FIELD STOP 600V 80A TO-3PF
Packaging: Tube
Package / Case: TO-3P-3 Full Pack
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 36 ns
Vce(on) (Max) @ Vge, Ic: 1.9V @ 15V, 40A
Supplier Device Package: TO-3PF
IGBT Type: Field Stop
Td (on/off) @ 25°C: 12ns/92ns
Switching Energy: 870µJ (on), 260µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 119 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 115 W
auf Bestellung 258 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.66 EUR |
| 30+ | 6.03 EUR |
| 120+ | 5.01 EUR |
| FDD4N60NZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 3.4A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 600V 3.4A DPAK
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 510 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 10.8 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±25V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 114W (Tc)
Rds On (Max) @ Id, Vgs: 2.5Ohm @ 1.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8321R2V |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD8321R2 |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Description: OPTOISO 5KV 1CH GATE DRIVER 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86248 |
|
Hersteller: onsemi
Description: MOSFET N CH 150V 3.4A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 150V 3.4A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250mA
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.64 EUR |
| FGH30S130P |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1300V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 500 W
Description: IGBT TRENCH FS 1300V 60A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Gate Charge: 78 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 60 A
Voltage - Collector Emitter Breakdown (Max): 1300 V
Current - Collector Pulsed (Icm): 90 A
Power - Max: 500 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMA8878 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
Description: MOSFET N-CH 30V 9A/10A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 10A (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 9A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 15 V
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.14 EUR |
| 6000+ | 1.09 EUR |
| FGA25S125P |
|
Hersteller: onsemi
Description: IGBT 1250V 50A 250W TO-3PN
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 204 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Description: IGBT 1250V 50A 250W TO-3PN
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 204 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC7208S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.46 EUR |
| FFH75H60S |
|
Hersteller: onsemi
Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Description: DIODE STANDARD 600V 75A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 75A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.2 V @ 75 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
auf Bestellung 878 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.65 EUR |
| 30+ | 5.43 EUR |
| 120+ | 4.5 EUR |
| 510+ | 3.81 EUR |
| FDMC8327L |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 12A/14A 8MLP
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
Description: MOSFET N-CH 40V 12A/14A 8MLP
Rds On (Max) @ Id, Vgs: 9.7mOhm @ 12A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 1850 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.3W (Ta), 30W (Tc)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.67 EUR |
| 6000+ | 0.62 EUR |
| FOD8321V |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tube
Description: OPTOISO 5KV 1CH GATE DVR 5SOP
Voltage - Output Supply: 16V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 60ns, 60ns
Supplier Device Package: 5-SOP
Approval Agency: IEC/EN/DIN, UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2A, 2A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 6-SOIC (0.346", 8.80mm Width), 5 Leads
Packaging: Tube
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.3 EUR |
| 10+ | 8.5 EUR |
| 100+ | 6.84 EUR |
| 500+ | 6.12 EUR |
| 1000+ | 5.88 EUR |
| 2000+ | 5.69 EUR |
| FDMS8820 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.93 EUR |
| 6000+ | 0.88 EUR |
| FGH40T65UPD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 20ns/144ns
Switching Energy: 1.59mJ (on), 580µJ (off)
Test Condition: 400V, 40A, 7Ohm, 15V
Gate Charge: 177 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FXMHD103UMX |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Tape & Reel (TR)
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FXWA9306L8X |
|
Hersteller: onsemi
Description: IC TRANSLATOR BIDIR 8MICROPAK
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC TRANSLATOR BIDIR 8MICROPAK
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 8-MicroPak™
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1 V ~ 5.5 V
Voltage - VCCB: 1.8 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 90000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.75 EUR |
| 10000+ | 0.73 EUR |
| 25000+ | 0.7 EUR |
| HUF76633P3-F085 |
Hersteller: onsemi
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Qualification: AEC-Q101
Description: MOSFET N-CH 100V 39A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 39A (Tc)
Rds On (Max) @ Id, Vgs: 35mOhm @ 39A, 10V
Power Dissipation (Max): 145W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-220-3
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 67 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1820 pF @ 25 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| DFB2080 |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
Description: BRIDGE RECT 1PHASE 800V 20A TS6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 800 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 800 V
auf Bestellung 1200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.37 EUR |
| 15+ | 4.45 EUR |
| 105+ | 3.55 EUR |
| 510+ | 3 EUR |
| 1005+ | 2.55 EUR |
| DFB2040 |
|
Hersteller: onsemi
Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Description: BRIDGE RECT 1P 400V 20A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 400 V
Current - Average Rectified (Io): 20 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 20 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 1040 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.51 EUR |
| 10+ | 4.26 EUR |
| 100+ | 2.98 EUR |
| 500+ | 2.43 EUR |
| FXL6408UMX |
|
Hersteller: onsemi
Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 16UMLP
Features: POR
Packaging: Tape & Reel (TR)
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.42 EUR |
| 15000+ | 0.4 EUR |
| 35000+ | 0.39 EUR |
| FSBB30CH60CT |
|
Hersteller: onsemi
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Description: IGBT IPM 600V 30A 27-PWRDIP MOD
Packaging: Tube
Package / Case: 27-PowerDIP Module (1.205", 30.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Obsolete
Current: 30 A
Voltage: 600 V
Produkt ist nicht verfügbar
Im Einkaufswagen
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| FSL137MRIN |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 30 W
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Description: IC OFFLINE SWITCH FLYBACK 8DIP
Power (Watts): 30 W
Part Status: Active
Voltage - Start Up: 12 V
Fault Protection: Current Limiting, Over Load, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-DIP
Voltage - Supply (Vcc/Vdd): 7.5V ~ 26V
Topology: Flyback
Output Isolation: Isolated
Voltage - Breakdown: 700V
Internal Switch(s): Yes
Frequency - Switching: 67kHz
Duty Cycle: 67%
Operating Temperature: -40°C ~ 125°C (TJ)
Mounting Type: Through Hole
Package / Case: 8-DIP (0.300", 7.62mm)
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| HUF76639S3ST-F085 |
|
Hersteller: onsemi
Description: MOSFET N CH 100V 51A TO-263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 100V 51A TO-263AB
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 2400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 86 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±16V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Obsolete
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 180W (Tc)
Rds On (Max) @ Id, Vgs: 26mOhm @ 51A, 10V
Current - Continuous Drain (Id) @ 25°C: 51A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS030N06B |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 3 EUR |
| FDMS8090 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Description: MOSFET 2N-CH 100V 10A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.2W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 1800pF @ 50V
Rds On (Max) @ Id, Vgs: 13mOhm @ 10A, 10V
Gate Charge (Qg) (Max) @ Vgs: 27nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (5x6), Power56
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| FDMC89521L |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.9W (Ta), 16W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.9W (Ta), 16W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.68 EUR |
| FDP053N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Description: MOSFET N-CH 80V 75A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 5960 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 85 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 146W (Tc)
Rds On (Max) @ Id, Vgs: 5.3mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.32 EUR |
| 50+ | 2.64 EUR |
| 100+ | 2.38 EUR |
| 500+ | 1.92 EUR |
| FDME820NZT |
|
Hersteller: onsemi
Description: MOSFET N-CH 20V 9A MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MicroFet 1.6x1.6 Thin
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 20V 9A MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 865 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±12V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: MicroFet 1.6x1.6 Thin
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.1W (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 9A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.67 EUR |
| FDMF3030 |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 900mOhm LS, 800mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 900mOhm LS, 800mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86101A |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS7678 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Description: MOSFET N-CH 30V 17.5A/26A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17.5A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 5.5mOhm @ 17.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 39 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2410 pF @ 15 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| DFB25100 |
|
Hersteller: onsemi
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
Description: BRIDGE RECT 1PHASE 1KV 25A TS-6P
Packaging: Tube
Package / Case: 4-SIP, TS-6P
Mounting Type: Through Hole
Diode Type: Single Phase
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: Standard
Supplier Device Package: TS-6P
Voltage - Peak Reverse (Max): 1 kV
Current - Average Rectified (Io): 25 A
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 25 A
Current - Reverse Leakage @ Vr: 10 µA @ 1000 V
auf Bestellung 2351 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.31 EUR |
| 15+ | 4.49 EUR |
| 105+ | 3.36 EUR |
| 510+ | 2.76 EUR |
| 1005+ | 2.57 EUR |
| 2010+ | 2.48 EUR |
| FAN53600AUC33X |
|
Hersteller: onsemi
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.82 EUR |
| FAN3227TMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.36 EUR |
| 5000+ | 1.32 EUR |
| BR262AD001EVK |
|
Hersteller: onsemi
Description: BOARD EVAL FOR BR262
Packaging: Bulk
Function: Audio Processing
Type: Audio
Contents: Board(s)
Utilized IC / Part: BR262
Primary Attributes: Noise-Cancelling
Description: BOARD EVAL FOR BR262
Packaging: Bulk
Function: Audio Processing
Type: Audio
Contents: Board(s)
Utilized IC / Part: BR262
Primary Attributes: Noise-Cancelling
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86200DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 9.3A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V
Description: MOSFET N-CH 150V 9.3A DLCOOL56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9.3A (Ta), 28A (Tc)
Rds On (Max) @ Id, Vgs: 17mOhm @ 9.3A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 42 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2955 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| FDMC86260 |
|
Hersteller: onsemi
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FOD8160R2 |
|
Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tape & Reel (TR)
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 3.68 EUR |
| FOD8160 |
|
Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Packaging: Tube
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Output Type: Open Collector, Schottky Clamped
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 25mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-SOP
Rise / Fall Time (Typ): 22ns, 9ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 1804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.44 EUR |
| 10+ | 5.75 EUR |
| 100+ | 4.38 EUR |
| 500+ | 3.84 EUR |
| 1000+ | 3.68 EUR |
| FCH041N60F |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V
Description: MOSFET N-CH 600V 76A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 76A (Tc)
Rds On (Max) @ Id, Vgs: 41mOhm @ 38A, 10V
Power Dissipation (Max): 595W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-247-3
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 360 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 14365 pF @ 100 V
auf Bestellung 2981 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 20.12 EUR |
| 30+ | 12.05 EUR |
| 120+ | 10.27 EUR |
| 510+ | 9.65 EUR |
| FDMS8333L |
|
Hersteller: onsemi
Description: MOSFET N CH 40V 22A POWER 56
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N CH 40V 22A POWER 56
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8333L |
|
Hersteller: onsemi
Description: MOSFET N CH 40V 22A POWER 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Description: MOSFET N CH 40V 22A POWER 56
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 22A, 10V
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 76A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 4545 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
auf Bestellung 2189 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.88 EUR |
| 10+ | 2.48 EUR |
| 100+ | 1.68 EUR |
| 500+ | 1.33 EUR |
| 1000+ | 1.21 EUR |
| FGD3N60UNDF |
|
Hersteller: onsemi
Description: IGBT NPT 600V 6A TO-252AA
Power - Max: 60 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 1.6 nC
Test Condition: 400V, 3A, 10Ohm, 15V
Switching Energy: 52µJ (on), 30µJ (off)
Td (on/off) @ 25°C: 5.5ns/22ns
IGBT Type: NPT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Reverse Recovery Time (trr): 21 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: IGBT NPT 600V 6A TO-252AA
Power - Max: 60 W
Current - Collector Pulsed (Icm): 9 A
Voltage - Collector Emitter Breakdown (Max): 600 V
Current - Collector (Ic) (Max): 6 A
Gate Charge: 1.6 nC
Test Condition: 400V, 3A, 10Ohm, 15V
Switching Energy: 52µJ (on), 30µJ (off)
Td (on/off) @ 25°C: 5.5ns/22ns
IGBT Type: NPT
Supplier Device Package: TO-252AA
Vce(on) (Max) @ Vge, Ic: 2.52V @ 15V, 3A
Reverse Recovery Time (trr): 21 ns
Input Type: Standard
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| QSB34CGR |
|
Hersteller: onsemi
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Gull Wing
Packaging: Tape & Reel (TR)
Description: SENSOR PHOTODIODE 940NM 2SMD GW
Voltage - DC Reverse (Vr) (Max): 32 V
Part Status: Active
Current - Dark (Typ): 30nA
Active Area: 6.5mm²
Spectral Range: 400nm ~ 1100nm
Viewing Angle: 120°
Response Time: 50ns
Operating Temperature: -25°C ~ 85°C
Diode Type: Pin
Mounting Type: Surface Mount
Wavelength: 940nm
Package / Case: 2-SMD, Gull Wing
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 0.9 EUR |
| 2000+ | 0.86 EUR |
| 3000+ | 0.83 EUR |
| 5000+ | 0.81 EUR |
| 7000+ | 0.79 EUR |
| NCS1002ADR2G |
|
Hersteller: onsemi
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7690 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 19+ | 1.15 EUR |
| 26+ | 0.82 EUR |
| 29+ | 0.74 EUR |
| 100+ | 0.64 EUR |
| 250+ | 0.6 EUR |
| 500+ | 0.57 EUR |
| 1000+ | 0.55 EUR |
| LMV932DR2G |
|
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| LMV932DR2G |
|
Hersteller: onsemi
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
Description: IC CMOS 2 CIRCUIT 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: CMOS
Operating Temperature: -40°C ~ 125°C
Current - Supply: 75µA (x2 Channels)
Slew Rate: 0.35V/µs
Gain Bandwidth Product: 1.5 MHz
Current - Input Bias: 1 nA
Voltage - Input Offset: 1 mV
Supplier Device Package: 8-SOIC
Number of Circuits: 2
Current - Output / Channel: 80 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5 V
auf Bestellung 172 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 24+ | 0.9 EUR |
| 34+ | 0.63 EUR |
| 37+ | 0.57 EUR |
| 100+ | 0.49 EUR |
| NCS1002ADR2G |
|
Hersteller: onsemi
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: IC SECONDARY-SIDE CTRLR 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C
Voltage - Supply: 3V ~ 32V
Applications: Secondary-Side Controller
Current - Supply: 200µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.51 EUR |
| 5000+ | 0.5 EUR |