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Technische Details CPH5617-TL-E ON Semiconductor
Description: MOSFET 2N-CH 30V 0.15A 5CPH, Packaging: Tape & Reel (TR), Package / Case: 5-SMD, Gull Wing, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual), Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 250mW, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 150mA, Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V, Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V, Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V, FET Feature: Logic Level Gate, Supplier Device Package: 5-CPH.
Weitere Produktangebote CPH5617-TL-E nach Preis ab 0.13 EUR bis 0.13 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
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|---|---|---|---|---|---|---|---|
| CPH5617-TL-E | onsemi |
 Description: MOSFET 2N-CH 30V 0.15A 5CPHPackaging: Bulk Package / Case: 5-SMD, Gull Wing Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 250mW Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 150mA Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V FET Feature: Logic Level Gate Supplier Device Package: 5-CPH |
auf Bestellung 345000 Stücke: Lieferzeit 10-14 Tag (e) |
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| CPH5617-TL-E |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 0.15A 5CPH
Packaging: Bulk
Package / Case: 5-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150mA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 5-CPH
Description: MOSFET 2N-CH 30V 0.15A 5CPH
Packaging: Bulk
Package / Case: 5-SMD, Gull Wing
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 250mW
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 150mA
Input Capacitance (Ciss) (Max) @ Vds: 7pF @ 10V
Rds On (Max) @ Id, Vgs: 3.7Ohm @ 80mA, 4V
Gate Charge (Qg) (Max) @ Vgs: 1.58nC @ 10V
FET Feature: Logic Level Gate
Supplier Device Package: 5-CPH
auf Bestellung 345000 Stücke:
Lieferzeit 10-14 Tag (e)| Anzahl | Preis |
|---|---|
| 3806+ | 0.13 EUR |