55GN01MA-TL-E onsemi
Hersteller: onsemi
Description: RF TRANS NPN 10V 5.5GHZ 3-MCP
Supplier Device Package: 3-MCP
Noise Figure (dB Typ @ f): 1.9dB @ 1GHz
Frequency - Transition: 4.5GHz ~ 5.5GHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V
Voltage - Collector Emitter Breakdown (Max): 10V
Current - Collector (Ic) (Max): 70mA
Power - Max: 400mW
Gain: 10dB @ 1GHz
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Bulk
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Technische Details 55GN01MA-TL-E onsemi
Description: RF TRANS NPN 10V 5.5GHZ 3-MCP, Transistor Type: NPN, Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR), Supplier Device Package: 3-MCP, Noise Figure (dB Typ @ f): 1.9dB @ 1GHz, Frequency - Transition: 4.5GHz ~ 5.5GHz, DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 5V, Voltage - Collector Emitter Breakdown (Max): 10V, Current - Collector (Ic) (Max): 70mA, Power - Max: 400mW, Gain: 10dB @ 1GHz, Operating Temperature: 150°C (TJ).
Weitere Produktangebote 55GN01MA-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
 |
55GN01MA-TL-E | ON Semiconductor |
Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G |
auf Bestellung 5548 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| 55GN01MA-TL-E |
|
Hersteller: ON Semiconductor
Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
Bipolar Transistors - BJT BIP NPN 70MA 10V FT=5.5G
auf Bestellung 5548 Stücke:
Lieferzeit 10-14 Tag (e)