Technische Details 5LP01C-TB-H ON Semiconductor
Description: MOSFET P-CH 50V 70MA 3CP, Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±10V, Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V, Supplier Device Package: SC-59-3/CP3, Power Dissipation (Max): 250mW (Ta), Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V, Current - Continuous Drain (Id) @ 25°C: 70mA (Ta), FET Type: P-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote 5LP01C-TB-H nach Preis ab 0.19 EUR bis 0.21 EUR
| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||
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5LP01C-TB-H | onsemi |
 Description: MOSFET P-CH 50V 70MA 3CPInput Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±10V Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V Supplier Device Package: SC-59-3/CP3 Power Dissipation (Max): 250mW (Ta) Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V Current - Continuous Drain (Id) @ 25°C: 70mA (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Bulk |
auf Bestellung 66000 Stücke: Lieferzeit 10-14 Tag (e) |
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| 5LP01C-TB-H | ONSEMI |
Description: ONSEMI - 5LP01C-TB-H - 5LP01C-TB-H, SINGLE BIPOLAR TRANSISTORS tariffCode: 85412900 productTraceability: No rohsCompliant: YES euEccn: NLR hazardous: false rohsPhthalatesCompliant: YES usEccn: EAR99 SVHC: No SVHC (14-Jun-2023) |
auf Bestellung 66000 Stücke: Lieferzeit 14-21 Tag (e) |
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| 5LP01C-TB-H |
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Hersteller: onsemi
Description: MOSFET P-CH 50V 70MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
Description: MOSFET P-CH 50V 70MA 3CP
Input Capacitance (Ciss) (Max) @ Vds: 7.4 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±10V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4V
Supplier Device Package: SC-59-3/CP3
Power Dissipation (Max): 250mW (Ta)
Rds On (Max) @ Id, Vgs: 23Ohm @ 40mA, 4V
Current - Continuous Drain (Id) @ 25°C: 70mA (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Bulk
auf Bestellung 66000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2597+ | 0.21 EUR |
| 5LP01C-TB-H |
|
Hersteller: ONSEMI
Description: ONSEMI - 5LP01C-TB-H - 5LP01C-TB-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
Description: ONSEMI - 5LP01C-TB-H - 5LP01C-TB-H, SINGLE BIPOLAR TRANSISTORS
tariffCode: 85412900
productTraceability: No
rohsCompliant: YES
euEccn: NLR
hazardous: false
rohsPhthalatesCompliant: YES
usEccn: EAR99
SVHC: No SVHC (14-Jun-2023)
auf Bestellung 66000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6000+ | 0.19 EUR |