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FDD5N50NZTM | onsemi |
 Description: MOSFET N-CH 500V 4A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 4A (Tc) Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V Power Dissipation (Max): 62W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 500 V Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V |
auf Bestellung 4988 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN6982MY | onsemi |
Description: IC PFC CTRLR CCM 75KHZ 14SOIC Current - Startup: 30 µA Part Status: Obsolete Supplier Device Package: 14-SOIC Mode: Continuous Conduction (CCM) Frequency - Switching: 50kHz ~ 75kHz Voltage - Supply: 11V ~ 22V Operating Temperature: -40°C ~ 105°C Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
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FAN7389MX1 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Part Status: Not For New Designs Current - Peak Output (Source, Sink): 350mA, 650mA Logic Voltage - VIL, VIH: 0.8V, 2.5V Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 6 Driven Configuration: Half-Bridge Channel Type: 3-Phase Rise / Fall Time (Typ): 50ns, 30ns Supplier Device Package: 28-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 28-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified |
auf Bestellung 968 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA2466UMX | onsemi |
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP Packaging: Cut Tape (CT) Package / Case: 16-UFQFN Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) On-State Resistance (Max): 1.6Ohm (Typ) -3db Bandwidth: 240MHz Supplier Device Package: 16-UMLP (1.8x2.6) Voltage - Supply, Single (V+): 1.65V ~ 4.45V Charge Injection: 8pC Crosstalk: -90dB @ 100kHz Switch Circuit: DPDT Multiplexer/Demultiplexer Circuit: 2:2 Channel-to-Channel Matching (ΔRon): 40mOhm Switch Time (Ton, Toff) (Max): 50ns, 32ns Channel Capacitance (CS(off), CD(off)): 6pF Current - Leakage (IS(off)) (Max): 10nA Part Status: Last Time Buy Number of Circuits: 2 |
auf Bestellung 2476 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7620S | onsemi |
Description: MOSFET 2N-CH 30V 10.1A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power56 Part Status: Active |
auf Bestellung 37648 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc) Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V Power Dissipation (Max): 2.3W (Ta), 26W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V |
auf Bestellung 6419 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS89141 | onsemi |
Description: MOSFET 2N-CH 100V 3.5A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1.6W Drain to Source Voltage (Vdss): 100V Current - Continuous Drain (Id) @ 25°C: 3.5A Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FQS4903TF | onsemi |
Description: MOSFET 2N-CH 500V 0.37A 8SOP Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Supplier Device Package: 8-SOIC Vgs(th) (Max) @ Id: 4V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V Current - Continuous Drain (Id) @ 25°C: 370mA Drain to Source Voltage (Vdss): 500V Power - Max: 2W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount |
auf Bestellung 113 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8020 | onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 65W (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86244 | onsemi |
Description: MOSFET N-CH 150V 2.8A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc) Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V |
auf Bestellung 4094 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT86246 | onsemi |
Description: MOSFET N-CH 150V 2A SOT223-4 Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta) Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V Power Dissipation (Max): 2.2W (Ta) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V |
auf Bestellung 4606 Stücke: Lieferzeit 10-14 Tag (e) |
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EGP10G | onsemi |
Description: DIODE STANDARD 400V 1A DO41 Current - Reverse Leakage @ Vr: 5 µA @ 400 V Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A Voltage - DC Reverse (Vr) (Max): 400 V Part Status: Active Operating Temperature - Junction: -65°C ~ 150°C Supplier Device Package: DO-41 Current - Average Rectified (Io): 1A Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: DO-204AL, DO-41, Axial Packaging: Cut Tape (CT) |
auf Bestellung 4032 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7660AS | onsemi |
Description: MOSFET N-CH 30V 26A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 2.5W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 3V @ 1mA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V |
auf Bestellung 3554 Stücke: Lieferzeit 10-14 Tag (e) |
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FSUSB74MPX | onsemi |
Description: IC USB MUX/SWITCH 16MLP Number of Channels: 1 Part Status: Active Multiplexer/Demultiplexer Circuit: 4:1 Voltage - Supply, Single (V+): 2.5V ~ 4.4V Supplier Device Package: 16-MLP (3x3) On-State Resistance (Max): 9Ohm Applications: USB Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-WFQFN Exposed Pad Features: Break-Before-Make, USB 2.0 Packaging: Cut Tape (CT) |
auf Bestellung 18313 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86105 | onsemi |
Description: MOSFET N-CH 100V 6A/26A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V Power Dissipation (Max): 2.5W (Ta), 48W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8030 | onsemi |
Description: MOSFET 2N-CH 40V 12A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 2.8V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V Current - Continuous Drain (Id) @ 25°C: 12A Drain to Source Voltage (Vdss): 40V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 8259 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8018 | onsemi |
Description: MOSFET N-CH 30V 30A/120A 8PQFN Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 83W (Tc) |
auf Bestellung 20164 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86310 | onsemi |
Description: MOSFET N-CH 80V 17A/50A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V |
auf Bestellung 8175 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7081MX-GF085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOIC DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 250mA, 500mA Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 15ns, 10ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive |
auf Bestellung 2473 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86102LZ | onsemi |
Description: MOSFET N-CH 100V 7A/22A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDS86140 | onsemi |
Description: MOSFET N-CH 100V 11.2A 8SOIC Packaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta) Rds On (Max) @ Id, Vgs: 9.8mOhm @ 11.2A, 10V Power Dissipation (Max): 2.5W (Ta), 5W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-SOIC Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 50 V |
auf Bestellung 1504 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8321L | onsemi |
Description: MOSFET N-CH 40V 22A/49A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 49A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 22A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V |
auf Bestellung 6089 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC89521L | onsemi |
Description: MOSFET 2N-CH 60V 8.2A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Drain to Source Voltage (Vdss): 60V Power - Max: 1.9W (Ta), 16W (Tc) Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 5311 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86320 | onsemi |
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 30731 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86520 | onsemi |
Description: MOSFET N-CH 60V 14A/42A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 42A (Tc) Rds On (Max) @ Id, Vgs: 7.4mOhm @ 14A, 10V Power Dissipation (Max): 2.5W (Ta), 69W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V |
auf Bestellung 59832 Stücke: Lieferzeit 10-14 Tag (e) |
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FXMA2104UMX | onsemi |
Description: IC XLTR VL BIDIR 12-UMLP Packaging: Cut Tape (CT) Package / Case: 12-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 26MHz Supplier Device Package: 12-UMLP (1.8x1.8) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FXMAR2104UMX | onsemi |
Description: IC XLTR VL BIDIR 12-UMLP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing Package / Case: 12-UFQFN Output Type: Open Drain, Tri-State Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 26MHz Supplier Device Package: 12-UMLP (1.8x1.8) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.65 V ~ 5.5 V Part Status: Active Number of Circuits: 1 |
auf Bestellung 48645 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86110 | onsemi |
Description: MOSFET N-CH 100V 12.5A/50A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 50A (Tc) Rds On (Max) @ Id, Vgs: 10.2mOhm @ 12.5A, 10V Power Dissipation (Max): 3.1W (Ta), 127W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V |
auf Bestellung 4198 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB86135 | onsemi |
Description: MOSFET N-CH 100V 75A D2PAK Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.4W (Ta), 227W (Tc) Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 75A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 2615 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7393AMX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOP Packaging: Cut Tape (CT) Package / Case: 14-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Non-Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 14-SOP Rise / Fall Time (Typ): 25ns, 15ns Channel Type: Synchronous Driven Configuration: Half-Bridge Number of Drivers: 2 Gate Type: IGBT, MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 2.5A, 2.5A Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 17301 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3664S | onsemi |
Description: MOSFET 2N-CH 30V 13A/25A POWER56 Packaging: Cut Tape (CT) Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 25A Drain to Source Voltage (Vdss): 30V Part Status: Active |
auf Bestellung 146472 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2701MX | onsemi |
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO |
Produkt ist nicht verfügbar |
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FPF2702MX | onsemi |
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Supplier Device Package: 8-SOIC Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.8V ~ 36V Input Type: Inverting Rds On (Typ): 88mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-SOIC (0.154", 3.90mm Width) Features: Power Good, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
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FDMS86101DC | onsemi |
Description: MOSFET N-CH 100V 14.5A DLCOOL56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14.5A, 10V Power Dissipation (Max): 3.2W (Ta), 125W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3135 pF @ 50 V |
auf Bestellung 30694 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8071R2 | onsemi |
Description: OPTOIS 3.75KV PUSH PULL 5-MF Packaging: Cut Tape (CT) Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads Output Type: Push-Pull, Totem Pole Mounting Type: Surface Mount Operating Temperature: -40°C ~ 110°C Voltage - Supply: 3V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.35V Data Rate: 20Mbps Input Type: DC Voltage - Isolation: 3750Vrms Current - DC Forward (If) (Max): 20mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 5-Mini-Flat Rise / Fall Time (Typ): 5.8ns, 5.3ns Common Mode Transient Immunity (Min): 20kV/µs Propagation Delay tpLH / tpHL (Max): 55ns, 55ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 10 mA |
auf Bestellung 7567 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS7656AS | onsemi |
Description: MOSFET N-CH 30V 31A/49A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 1mA Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 39 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86103L | onsemi |
Description: MOSFET N-CH 100V 12A/49A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 8-PQFN (5x6) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) |
auf Bestellung 6565 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC8010 | onsemi |
Description: MOSFET N-CH 30V 30A/75A POWER33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 75A (Tc) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Power Dissipation (Max): 2.4W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 1mA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V |
auf Bestellung 8997 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86540 | onsemi |
Description: MOSFET N-CH 60V 20A/50A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 27443 Stücke: Lieferzeit 10-14 Tag (e) |
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.jpg "FPF2701MPX") |
FPF2701MPX | onsemi |
Description: IC PWR SWITCH N-CHAN 1:1 8MLP |
auf Bestellung 21454 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF2702MPX | onsemi |
Description: IC PWR SWITCH N-CHAN 1:1 8MLP Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO Supplier Device Package: 8-MLP (3x3) Ratio - Input:Output: 1:1 Current - Output (Max): 2A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 2.8V ~ 36V Input Type: Inverting Rds On (Typ): 88mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: N-Channel Package / Case: 8-WDFN Exposed Pad Features: Power Good, Slew Rate Controlled, Status Flag Packaging: Cut Tape (CT) |
auf Bestellung 22115 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC2512SDC | onsemi |
Description: MOSFET N-CH 25V 32A 8PQFN |
auf Bestellung 394 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86250 | onsemi |
Description: MOSFET N-CH 150V 6.7A/20A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 20A (Tc) Rds On (Max) @ Id, Vgs: 25mOhm @ 6.7A, 10V Power Dissipation (Max): 2.5W (Ta), 96W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 75 V |
auf Bestellung 6444 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8320L | onsemi |
Description: MOSFET N-CH 40V 36A/100A 8PQFN Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 32A, 10V Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active |
auf Bestellung 12114 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS030N06B | onsemi |
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc) Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V |
auf Bestellung 3596 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMQ8203 | onsemi |
Description: MOSFET 2N/2P-CH 100V/80V 12MLP Packaging: Cut Tape (CT) Package / Case: 12-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 N and 2 P-Channel (Full Bridge) Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 2.5W Drain to Source Voltage (Vdss): 100V, 80V Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V, 850pF @ 40V Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 12-MLP (5x4.5) Part Status: Active |
auf Bestellung 17884 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6823C | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Part Status: Last Time Buy Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS Current - Output / Channel: 50A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Cut Tape (CT) |
auf Bestellung 11942 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA641UMX | onsemi |
Description: IC ANALOG MIPI SWITCH 20UMLP Voltage - Supply, Single (V+): 2.65V ~ 4.3V Supplier Device Package: 20-UMLP (3x3) -3db Bandwidth: 1GHz On-State Resistance (Max): 14Ohm Applications: MIPI Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-UFQFN Exposed Pad Packaging: Cut Tape (CT) Number of Channels: 1 Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT |
auf Bestellung 3103 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF3030 | onsemi |
Description: IC HALF BRIDGE DRIVER 50A 40PQFN Part Status: Last Time Buy Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 24V Technology: DrMOS Current - Output / Channel: 50A Applications: Synchronous Buck Converters Rds On (Typ): 900mOhm LS, 800mOhm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Diode Emulation, Status Flag Packaging: Cut Tape (CT) |
auf Bestellung 2899 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC1815YTA | onsemi |
Description: TRANS NPN 50V 0.15A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V Frequency - Transition: 80MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 150 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 400 mW |
auf Bestellung 1420 Stücke: Lieferzeit 10-14 Tag (e) |
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KSC1008YTA | onsemi |
Description: TRANS NPN 60V 0.7A TO-92-3 Packaging: Cut Tape (CT) Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Mounting Type: Through Hole Transistor Type: NPN Operating Temperature: 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V Frequency - Transition: 50MHz Supplier Device Package: TO-92-3 Part Status: Active Current - Collector (Ic) (Max): 700 mA Voltage - Collector Emitter Breakdown (Max): 60 V Power - Max: 800 mW |
auf Bestellung 5333 Stücke: Lieferzeit 10-14 Tag (e) |
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BZX79C18-T50A | onsemi |
Description: DIODE ZENER 18V 500MW DO35 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AH, DO-35, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 18 V Impedance (Max) (Zzt): 45 Ohms Supplier Device Package: DO-35 Part Status: Active Power - Max: 500 mW Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V |
auf Bestellung 1742 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4745A-T50A | onsemi |
Description: DIODE ZENER 16V 1W DO41 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 16 V Impedance (Max) (Zzt): 16 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V |
auf Bestellung 1835 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4742A-T50A | onsemi |
Description: DIODE ZENER 12V 1W DO41 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 12 V Impedance (Max) (Zzt): 9 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V |
auf Bestellung 919 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4734A-T50A | onsemi |
Description: DIODE ZENER 5.6V 1W DO41 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 5.6 V Impedance (Max) (Zzt): 5 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 10 µA @ 2 V |
auf Bestellung 2875 Stücke: Lieferzeit 10-14 Tag (e) |
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1N4744A-T50A | onsemi |
Description: DIODE ZENER 15V 1W DO41 Packaging: Cut Tape (CT) Tolerance: ±5% Package / Case: DO-204AL, DO-41, Axial Mounting Type: Through Hole Operating Temperature: -65°C ~ 200°C Voltage - Zener (Nom) (Vz): 15 V Impedance (Max) (Zzt): 14 Ohms Supplier Device Package: DO-41 Part Status: Active Power - Max: 1 W Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V |
auf Bestellung 45509 Stücke: Lieferzeit 10-14 Tag (e) |
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KSA916YTA | onsemi |
Description: TRANS PNP 120V 0.8A TO-92-3 Power - Max: 900 mW Voltage - Collector Emitter Breakdown (Max): 120 V Current - Collector (Ic) (Max): 800 mA Part Status: Active Supplier Device Package: TO-92-3 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: PNP Mounting Type: Through Hole Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads Packaging: Cut Tape (CT) |
auf Bestellung 3318 Stücke: Lieferzeit 10-14 Tag (e) |
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CAT4240AGEVB | onsemi |
Description: BOARD EVAL FOR CAT4240 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
| NCP1653GEVB | onsemi |
Description: EVAL BOARD FOR NCP1653 Contents: Board(s) Supplied Contents: Board(s) Utilized IC / Part: NCP1653 Type: Power Management Function: Power Factor Correction Packaging: Bulk Part Status: Obsolete Embedded: No |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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LV8727GEVB | onsemi |
Description: EVAL BOARD FOR LV8727 Contents: Board(s) Part Status: Active Embedded: No Supplied Contents: Board(s) Utilized IC / Part: LV8727 Type: Power Management Function: Motor Controller/Driver, Stepper Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDD5N50NZTM |
|
Hersteller: onsemi
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
Description: MOSFET N-CH 500V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Tc)
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 2A, 10V
Power Dissipation (Max): 62W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 440 pF @ 25 V
auf Bestellung 4988 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.62 EUR |
| 11+ | 1.66 EUR |
| 100+ | 1.11 EUR |
| 500+ | 0.87 EUR |
| 1000+ | 0.8 EUR |
| FAN6982MY |
|
Hersteller: onsemi
Description: IC PFC CTRLR CCM 75KHZ 14SOIC
Current - Startup: 30 µA
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 50kHz ~ 75kHz
Voltage - Supply: 11V ~ 22V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC PFC CTRLR CCM 75KHZ 14SOIC
Current - Startup: 30 µA
Part Status: Obsolete
Supplier Device Package: 14-SOIC
Mode: Continuous Conduction (CCM)
Frequency - Switching: 50kHz ~ 75kHz
Voltage - Supply: 11V ~ 22V
Operating Temperature: -40°C ~ 105°C
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN7389MX1 |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Part Status: Not For New Designs
Current - Peak Output (Source, Sink): 350mA, 650mA
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 6
Driven Configuration: Half-Bridge
Channel Type: 3-Phase
Rise / Fall Time (Typ): 50ns, 30ns
Supplier Device Package: 28-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
auf Bestellung 968 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.97 EUR |
| 10+ | 4.51 EUR |
| 25+ | 3.87 EUR |
| 100+ | 3.15 EUR |
| 250+ | 2.79 EUR |
| 500+ | 2.57 EUR |
| FSA2466UMX |
|
Hersteller: onsemi
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.6Ohm (Typ)
-3db Bandwidth: 240MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.45V
Charge Injection: 8pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 50ns, 32ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Last Time Buy
Number of Circuits: 2
Description: IC SWITCH DPDT X 2 1.6OHM 16UMLP
Packaging: Cut Tape (CT)
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 1.6Ohm (Typ)
-3db Bandwidth: 240MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.45V
Charge Injection: 8pC
Crosstalk: -90dB @ 100kHz
Switch Circuit: DPDT
Multiplexer/Demultiplexer Circuit: 2:2
Channel-to-Channel Matching (ΔRon): 40mOhm
Switch Time (Ton, Toff) (Max): 50ns, 32ns
Channel Capacitance (CS(off), CD(off)): 6pF
Current - Leakage (IS(off)) (Max): 10nA
Part Status: Last Time Buy
Number of Circuits: 2
auf Bestellung 2476 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 20+ | 0.9 EUR |
| 28+ | 0.64 EUR |
| 31+ | 0.57 EUR |
| 100+ | 0.5 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.44 EUR |
| 1000+ | 0.42 EUR |
| FDMS7620S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Part Status: Active
Description: MOSFET 2N-CH 30V 10.1A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 10.1A, 12.4A
Input Capacitance (Ciss) (Max) @ Vds: 608pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 10.1A, 10V
Gate Charge (Qg) (Max) @ Vgs: 11nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power56
Part Status: Active
auf Bestellung 37648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.03 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.98 EUR |
| FDMC86244 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A/9.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Ta), 9.4A (Tc)
Rds On (Max) @ Id, Vgs: 134mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.3W (Ta), 26W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 5.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 345 pF @ 75 V
auf Bestellung 6419 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.92 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.25 EUR |
| 500+ | 0.99 EUR |
| 1000+ | 0.9 EUR |
| FDS89141 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Description: MOSFET 2N-CH 100V 3.5A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1.6W
Drain to Source Voltage (Vdss): 100V
Current - Continuous Drain (Id) @ 25°C: 3.5A
Input Capacitance (Ciss) (Max) @ Vds: 398pF @ 50V
Rds On (Max) @ Id, Vgs: 62mOhm @ 3.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 7.1nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.04 EUR |
| 10+ | 3.95 EUR |
| 100+ | 2.77 EUR |
| 500+ | 2.29 EUR |
| FQS4903TF |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 500V 0.37A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 500V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Description: MOSFET 2N-CH 500V 0.37A 8SOP
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Supplier Device Package: 8-SOIC
Vgs(th) (Max) @ Id: 4V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 8.2nC @ 10V
Rds On (Max) @ Id, Vgs: 6.2Ohm @ 185mA, 10V
Input Capacitance (Ciss) (Max) @ Vds: 200pF @ 25V
Current - Continuous Drain (Id) @ 25°C: 370mA
Drain to Source Voltage (Vdss): 500V
Power - Max: 2W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
auf Bestellung 113 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.9 EUR |
| 10+ | 2.62 EUR |
| 100+ | 2.1 EUR |
| FDMS8020 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3800 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 65W (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 26A, 10V
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.9 EUR |
| 100+ | 1.28 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.93 EUR |
| FDT86244 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V
Description: MOSFET N-CH 150V 2.8A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.8A (Tc)
Rds On (Max) @ Id, Vgs: 128mOhm @ 2.8A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 395 pF @ 75 V
auf Bestellung 4094 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.24 EUR |
| 13+ | 1.42 EUR |
| 100+ | 0.94 EUR |
| 500+ | 0.73 EUR |
| 1000+ | 0.67 EUR |
| 2000+ | 0.61 EUR |
| FDT86246 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
Description: MOSFET N-CH 150V 2A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta)
Rds On (Max) @ Id, Vgs: 236mOhm @ 2A, 10V
Power Dissipation (Max): 2.2W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 215 pF @ 75 V
auf Bestellung 4606 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.97 EUR |
| 10+ | 1.89 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.92 EUR |
| 2000+ | 0.87 EUR |
| EGP10G |
|
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
Description: DIODE STANDARD 400V 1A DO41
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Part Status: Active
Operating Temperature - Junction: -65°C ~ 150°C
Supplier Device Package: DO-41
Current - Average Rectified (Io): 1A
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: DO-204AL, DO-41, Axial
Packaging: Cut Tape (CT)
auf Bestellung 4032 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 25+ | 0.72 EUR |
| 35+ | 0.51 EUR |
| 100+ | 0.4 EUR |
| 500+ | 0.31 EUR |
| 1000+ | 0.26 EUR |
| 2000+ | 0.25 EUR |
| FDMS7660AS |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
Description: MOSFET N-CH 30V 26A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6120 pF @ 15 V
auf Bestellung 3554 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.43 EUR |
| 10+ | 2.21 EUR |
| 100+ | 1.5 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.11 EUR |
| FSUSB74MPX |
|
Hersteller: onsemi
Description: IC USB MUX/SWITCH 16MLP
Number of Channels: 1
Part Status: Active
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 2.5V ~ 4.4V
Supplier Device Package: 16-MLP (3x3)
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
Description: IC USB MUX/SWITCH 16MLP
Number of Channels: 1
Part Status: Active
Multiplexer/Demultiplexer Circuit: 4:1
Voltage - Supply, Single (V+): 2.5V ~ 4.4V
Supplier Device Package: 16-MLP (3x3)
On-State Resistance (Max): 9Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN Exposed Pad
Features: Break-Before-Make, USB 2.0
Packaging: Cut Tape (CT)
auf Bestellung 18313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.09 EUR |
| 12+ | 1.53 EUR |
| 25+ | 1.39 EUR |
| 100+ | 1.23 EUR |
| 250+ | 1.15 EUR |
| 500+ | 1.13 EUR |
| FDMS86105 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 6A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V
Description: MOSFET N-CH 100V 6A/26A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta), 26A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 6A, 10V
Power Dissipation (Max): 2.5W (Ta), 48W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 11 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 645 pF @ 50 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.29 EUR |
| 10+ | 2.77 EUR |
| 100+ | 1.9 EUR |
| 500+ | 1.53 EUR |
| 1000+ | 1.43 EUR |
| FDMC8030 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 40V 12A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 12A
Drain to Source Voltage (Vdss): 40V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 40V 12A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 10mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1975pF @ 20V
Current - Continuous Drain (Id) @ 25°C: 12A
Drain to Source Voltage (Vdss): 40V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 8259 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 10+ | 1.84 EUR |
| 100+ | 1.43 EUR |
| 500+ | 1.21 EUR |
| 1000+ | 0.99 EUR |
| FDMS8018 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
Description: MOSFET N-CH 30V 30A/120A 8PQFN
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5235 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 83W (Tc)
auf Bestellung 20164 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 10+ | 2.62 EUR |
| 100+ | 1.79 EUR |
| 500+ | 1.43 EUR |
| 1000+ | 1.32 EUR |
| FDMS86310 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 17A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V
Description: MOSFET N-CH 80V 17A/50A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 4.8mOhm @ 17A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6290 pF @ 40 V
auf Bestellung 8175 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.33 EUR |
| 10+ | 3.47 EUR |
| 100+ | 2.41 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.93 EUR |
| FAN7081MX-GF085 |
|
Hersteller: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Description: IC GATE DRVR HIGH-SIDE 8SOIC
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 250mA, 500mA
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 15ns, 10ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 2473 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.89 EUR |
| 10+ | 3.1 EUR |
| 25+ | 2.63 EUR |
| 100+ | 2.1 EUR |
| 250+ | 1.84 EUR |
| 500+ | 1.68 EUR |
| 1000+ | 1.54 EUR |
| FDMS86102LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
Description: MOSFET N-CH 100V 7A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 7A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1305 pF @ 50 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.72 EUR |
| 10+ | 3.05 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.63 EUR |
| FDS86140 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 11.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 11.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 50 V
Description: MOSFET N-CH 100V 11.2A 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.2A (Ta)
Rds On (Max) @ Id, Vgs: 9.8mOhm @ 11.2A, 10V
Power Dissipation (Max): 2.5W (Ta), 5W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-SOIC
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2580 pF @ 50 V
auf Bestellung 1504 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.81 EUR |
| 10+ | 3.81 EUR |
| 100+ | 2.67 EUR |
| 500+ | 2.39 EUR |
| FDMC8321L |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 22A/49A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 22A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
Description: MOSFET N-CH 40V 22A/49A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 22A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3900 pF @ 20 V
auf Bestellung 6089 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 2.94 EUR |
| 10+ | 1.87 EUR |
| 100+ | 1.26 EUR |
| 500+ | 1 EUR |
| 1000+ | 0.93 EUR |
| FDMC89521L |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.9W (Ta), 16W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 60V 8.2A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 17mOhm @ 8.2A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1635pF @ 30V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Drain to Source Voltage (Vdss): 60V
Power - Max: 1.9W (Ta), 16W (Tc)
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 5311 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.73 EUR |
| 10+ | 3.06 EUR |
| 100+ | 2.11 EUR |
| 500+ | 1.7 EUR |
| 1000+ | 1.57 EUR |
| FDMS86320 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 80V 10.5A/22A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 2640 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 41 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Rds On (Max) @ Id, Vgs: 11.7mOhm @ 10.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10.5A (Ta), 22A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 30731 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.92 EUR |
| 10+ | 2.52 EUR |
| 100+ | 1.71 EUR |
| 500+ | 1.37 EUR |
| 1000+ | 1.26 EUR |
| FDMS86520 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 14A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V
Description: MOSFET N-CH 60V 14A/42A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 42A (Tc)
Rds On (Max) @ Id, Vgs: 7.4mOhm @ 14A, 10V
Power Dissipation (Max): 2.5W (Ta), 69W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2850 pF @ 30 V
auf Bestellung 59832 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.75 EUR |
| 10+ | 2.4 EUR |
| 100+ | 1.63 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.2 EUR |
| FXMA2104UMX |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 26MHz
Supplier Device Package: 12-UMLP (1.8x1.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Package / Case: 12-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 26MHz
Supplier Device Package: 12-UMLP (1.8x1.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 22+ | 0.81 EUR |
| 31+ | 0.58 EUR |
| 35+ | 0.52 EUR |
| 100+ | 0.45 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
| FXMAR2104UMX |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 12-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 26MHz
Supplier Device Package: 12-UMLP (1.8x1.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 12-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 26MHz
Supplier Device Package: 12-UMLP (1.8x1.8)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 48645 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 24+ | 0.76 EUR |
| 34+ | 0.53 EUR |
| 37+ | 0.48 EUR |
| 100+ | 0.41 EUR |
| 250+ | 0.38 EUR |
| 500+ | 0.37 EUR |
| 1000+ | 0.35 EUR |
| FDD86110 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 12.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V
Description: MOSFET N-CH 100V 12.5A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 12.5A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 10.2mOhm @ 12.5A, 10V
Power Dissipation (Max): 3.1W (Ta), 127W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2265 pF @ 50 V
auf Bestellung 4198 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.81 EUR |
| 10+ | 3.8 EUR |
| 100+ | 2.65 EUR |
| 500+ | 2.17 EUR |
| FDB86135 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 75A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 227W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 100V 75A D2PAK
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.4W (Ta), 227W (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 2615 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 10.98 EUR |
| 10+ | 7.44 EUR |
| 100+ | 5.58 EUR |
| FAN7393AMX |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Packaging: Cut Tape (CT)
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Non-Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 14-SOP
Rise / Fall Time (Typ): 25ns, 15ns
Channel Type: Synchronous
Driven Configuration: Half-Bridge
Number of Drivers: 2
Gate Type: IGBT, MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 2.5A, 2.5A
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 17301 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.49 EUR |
| 10+ | 3.36 EUR |
| 25+ | 3.08 EUR |
| 100+ | 2.76 EUR |
| 250+ | 2.62 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.45 EUR |
| FDMS3664S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Drain to Source Voltage (Vdss): 30V
Part Status: Active
Description: MOSFET 2N-CH 30V 13A/25A POWER56
Packaging: Cut Tape (CT)
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 25A
Drain to Source Voltage (Vdss): 30V
Part Status: Active
auf Bestellung 146472 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.16 EUR |
| 11+ | 1.63 EUR |
| 100+ | 1.32 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1.07 EUR |
| FPF2701MX |
|
Hersteller: onsemi
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FPF2702MX |
|
Hersteller: onsemi
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.8V ~ 36V
Input Type: Inverting
Rds On (Typ): 88mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CHANNEL 1:1 8SO
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: 8-SOIC
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.8V ~ 36V
Input Type: Inverting
Rds On (Typ): 88mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86101DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 14.5A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3135 pF @ 50 V
Description: MOSFET N-CH 100V 14.5A DLCOOL56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14.5A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 7.5mOhm @ 14.5A, 10V
Power Dissipation (Max): 3.2W (Ta), 125W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 44 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3135 pF @ 50 V
auf Bestellung 30694 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.52 EUR |
| 10+ | 5.67 EUR |
| 100+ | 4.05 EUR |
| 500+ | 3.63 EUR |
| FODM8071R2 |
|
Hersteller: onsemi
Description: OPTOIS 3.75KV PUSH PULL 5-MF
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.35V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-Mini-Flat
Rise / Fall Time (Typ): 5.8ns, 5.3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
Description: OPTOIS 3.75KV PUSH PULL 5-MF
Packaging: Cut Tape (CT)
Package / Case: 6-SOIC (0.173", 4.40mm Width), 5 Leads
Output Type: Push-Pull, Totem Pole
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Supply: 3V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.35V
Data Rate: 20Mbps
Input Type: DC
Voltage - Isolation: 3750Vrms
Current - DC Forward (If) (Max): 20mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 5-Mini-Flat
Rise / Fall Time (Typ): 5.8ns, 5.3ns
Common Mode Transient Immunity (Min): 20kV/µs
Propagation Delay tpLH / tpHL (Max): 55ns, 55ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 10 mA
auf Bestellung 7567 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.07 EUR |
| 10+ | 3.7 EUR |
| 100+ | 2.89 EUR |
| 500+ | 2.53 EUR |
| 1000+ | 2.42 EUR |
| FDMS7656AS |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 31A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 31A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 1mA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 39 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.04 EUR |
| 10+ | 2.74 EUR |
| FDMS86103L |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 12A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Description: MOSFET N-CH 100V 12A/49A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 3710 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 12A, 10V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 8-PQFN (5x6)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Current - Continuous Drain (Id) @ 25°C: 12A (Ta), 49A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
auf Bestellung 6565 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.25 EUR |
| 10+ | 2.1 EUR |
| FDMC8010 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/75A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Description: MOSFET N-CH 30V 30A/75A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 75A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.4W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
auf Bestellung 8997 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.75 EUR |
| 10+ | 2.41 EUR |
| 100+ | 1.65 EUR |
| 500+ | 1.32 EUR |
| 1000+ | 1.31 EUR |
| FDMS86540 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 20A/50A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 20A/50A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 6435 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 20A, 10V
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 50A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 27443 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.98 EUR |
| 10+ | 2.56 EUR |
| 100+ | 1.75 EUR |
| 500+ | 1.4 EUR |
| 1000+ | 1.29 EUR |
| FPF2701MPX |
|
Hersteller: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
auf Bestellung 21454 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.72 EUR |
| 10+ | 5.12 EUR |
| 25+ | 4.84 EUR |
| 100+ | 4.2 EUR |
| 250+ | 3.98 EUR |
| 500+ | 3.57 EUR |
| 1000+ | 3.01 EUR |
| FPF2702MPX |
|
Hersteller: onsemi
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: 8-MLP (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.8V ~ 36V
Input Type: Inverting
Rds On (Typ): 88mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-WDFN Exposed Pad
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH N-CHAN 1:1 8MLP
Fault Protection: Current Limiting (Adjustable), Over Temperature, UVLO
Supplier Device Package: 8-MLP (3x3)
Ratio - Input:Output: 1:1
Current - Output (Max): 2A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 2.8V ~ 36V
Input Type: Inverting
Rds On (Typ): 88mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: N-Channel
Package / Case: 8-WDFN Exposed Pad
Features: Power Good, Slew Rate Controlled, Status Flag
Packaging: Cut Tape (CT)
auf Bestellung 22115 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.88 EUR |
| 10+ | 4.37 EUR |
| 25+ | 4.13 EUR |
| 100+ | 3.4 EUR |
| 250+ | 3.05 EUR |
| 500+ | 2.94 EUR |
| 1000+ | 2.44 EUR |
| FDMC2512SDC |
|
Hersteller: onsemi
Description: MOSFET N-CH 25V 32A 8PQFN
Description: MOSFET N-CH 25V 32A 8PQFN
auf Bestellung 394 Stücke:
Lieferzeit 10-14 Tag (e)
| FDMS86250 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 6.7A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 75 V
Description: MOSFET N-CH 150V 6.7A/20A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.7A (Ta), 20A (Tc)
Rds On (Max) @ Id, Vgs: 25mOhm @ 6.7A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2330 pF @ 75 V
auf Bestellung 6444 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5.65 EUR |
| 10+ | 3.69 EUR |
| 100+ | 2.57 EUR |
| 500+ | 2.1 EUR |
| 1000+ | 2.09 EUR |
| FDMS8320L |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 36A/100A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Description: MOSFET N-CH 40V 36A/100A 8PQFN
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 32A, 10V
Current - Continuous Drain (Id) @ 25°C: 36A (Ta), 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 11110 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 170 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
auf Bestellung 12114 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 5 EUR |
| 10+ | 3.75 EUR |
| 100+ | 3.22 EUR |
| 500+ | 3.14 EUR |
| FDMS030N06B |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
Description: MOSFET N-CH 60V 22.1A/100A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 22.1A (Ta), 100A (Tc)
Rds On (Max) @ Id, Vgs: 3mOhm @ 50A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7560 pF @ 30 V
auf Bestellung 3596 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.55 EUR |
| 10+ | 5 EUR |
| 100+ | 3.55 EUR |
| 500+ | 3.09 EUR |
| FDMQ8203 |
|
Hersteller: onsemi
Description: MOSFET 2N/2P-CH 100V/80V 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 100V, 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V, 850pF @ 40V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
Description: MOSFET 2N/2P-CH 100V/80V 12MLP
Packaging: Cut Tape (CT)
Package / Case: 12-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 N and 2 P-Channel (Full Bridge)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 2.5W
Drain to Source Voltage (Vdss): 100V, 80V
Current - Continuous Drain (Id) @ 25°C: 3.4A, 2.6A
Input Capacitance (Ciss) (Max) @ Vds: 210pF @ 50V, 850pF @ 40V
Rds On (Max) @ Id, Vgs: 110mOhm @ 3A, 10V
Gate Charge (Qg) (Max) @ Vgs: 5nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 12-MLP (5x4.5)
Part Status: Active
auf Bestellung 17884 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.48 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.52 EUR |
| 500+ | 1.22 EUR |
| 1000+ | 1.19 EUR |
| FDMF6823C |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Cut Tape (CT)
auf Bestellung 11942 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.59 EUR |
| 10+ | 5.04 EUR |
| 100+ | 3.59 EUR |
| 500+ | 2.97 EUR |
| 1000+ | 2.78 EUR |
| FSA641UMX |
|
Hersteller: onsemi
Description: IC ANALOG MIPI SWITCH 20UMLP
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Supplier Device Package: 20-UMLP (3x3)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 14Ohm
Applications: MIPI
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Description: IC ANALOG MIPI SWITCH 20UMLP
Voltage - Supply, Single (V+): 2.65V ~ 4.3V
Supplier Device Package: 20-UMLP (3x3)
-3db Bandwidth: 1GHz
On-State Resistance (Max): 14Ohm
Applications: MIPI
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Packaging: Cut Tape (CT)
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
auf Bestellung 3103 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 16+ | 1.16 EUR |
| 25+ | 1.05 EUR |
| 100+ | 0.93 EUR |
| 250+ | 0.87 EUR |
| 500+ | 0.83 EUR |
| 1000+ | 0.8 EUR |
| 2500+ | 0.77 EUR |
| FDMF3030 |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 900mOhm LS, 800mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
Description: IC HALF BRIDGE DRIVER 50A 40PQFN
Part Status: Last Time Buy
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 24V
Technology: DrMOS
Current - Output / Channel: 50A
Applications: Synchronous Buck Converters
Rds On (Typ): 900mOhm LS, 800mOhm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Diode Emulation, Status Flag
Packaging: Cut Tape (CT)
auf Bestellung 2899 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.88 EUR |
| 10+ | 4.93 EUR |
| 100+ | 3.99 EUR |
| 500+ | 3.55 EUR |
| 1000+ | 3.04 EUR |
| KSC1815YTA |
|
Hersteller: onsemi
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
Description: TRANS NPN 50V 0.15A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 10mA, 100mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 2mA, 6V
Frequency - Transition: 80MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 150 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 400 mW
auf Bestellung 1420 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 39+ | 0.46 EUR |
| 62+ | 0.29 EUR |
| 100+ | 0.18 EUR |
| 500+ | 0.13 EUR |
| 1000+ | 0.12 EUR |
| KSC1008YTA |
|
Hersteller: onsemi
Description: TRANS NPN 60V 0.7A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
Description: TRANS NPN 60V 0.7A TO-92-3
Packaging: Cut Tape (CT)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Mounting Type: Through Hole
Transistor Type: NPN
Operating Temperature: 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 50mA, 2V
Frequency - Transition: 50MHz
Supplier Device Package: TO-92-3
Part Status: Active
Current - Collector (Ic) (Max): 700 mA
Voltage - Collector Emitter Breakdown (Max): 60 V
Power - Max: 800 mW
auf Bestellung 5333 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 30+ | 0.6 EUR |
| 49+ | 0.36 EUR |
| 100+ | 0.23 EUR |
| 500+ | 0.17 EUR |
| 1000+ | 0.15 EUR |
| BZX79C18-T50A |
|
Hersteller: onsemi
Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
Description: DIODE ZENER 18V 500MW DO35
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AH, DO-35, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 18 V
Impedance (Max) (Zzt): 45 Ohms
Supplier Device Package: DO-35
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 100 mA
Current - Reverse Leakage @ Vr: 50 nA @ 12.6 V
auf Bestellung 1742 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 112+ | 0.16 EUR |
| 176+ | 0.1 EUR |
| 378+ | 0.047 EUR |
| 500+ | 0.044 EUR |
| 1000+ | 0.041 EUR |
| 1N4745A-T50A |
|
Hersteller: onsemi
Description: DIODE ZENER 16V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
Description: DIODE ZENER 16V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 16 V
Impedance (Max) (Zzt): 16 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 12.2 V
auf Bestellung 1835 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 70+ | 0.25 EUR |
| 111+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| 1N4742A-T50A |
|
Hersteller: onsemi
Description: DIODE ZENER 12V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
Description: DIODE ZENER 12V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 12 V
Impedance (Max) (Zzt): 9 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 9.1 V
auf Bestellung 919 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 69+ | 0.26 EUR |
| 111+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1N4734A-T50A |
|
Hersteller: onsemi
Description: DIODE ZENER 5.6V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
Description: DIODE ZENER 5.6V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 5.6 V
Impedance (Max) (Zzt): 5 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 10 µA @ 2 V
auf Bestellung 2875 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 33+ | 0.55 EUR |
| 53+ | 0.33 EUR |
| 100+ | 0.21 EUR |
| 500+ | 0.16 EUR |
| 1000+ | 0.14 EUR |
| 1N4744A-T50A |
|
Hersteller: onsemi
Description: DIODE ZENER 15V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
Description: DIODE ZENER 15V 1W DO41
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: DO-204AL, DO-41, Axial
Mounting Type: Through Hole
Operating Temperature: -65°C ~ 200°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 14 Ohms
Supplier Device Package: DO-41
Part Status: Active
Power - Max: 1 W
Current - Reverse Leakage @ Vr: 5 µA @ 11.4 V
auf Bestellung 45509 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 42+ | 0.42 EUR |
| 70+ | 0.25 EUR |
| 111+ | 0.16 EUR |
| 500+ | 0.12 EUR |
| 1000+ | 0.1 EUR |
| KSA916YTA |
|
Hersteller: onsemi
Description: TRANS PNP 120V 0.8A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
Description: TRANS PNP 120V 0.8A TO-92-3
Power - Max: 900 mW
Voltage - Collector Emitter Breakdown (Max): 120 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Active
Supplier Device Package: TO-92-3
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: PNP
Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 Long Body, Formed Leads
Packaging: Cut Tape (CT)
auf Bestellung 3318 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 17+ | 1.07 EUR |
| 27+ | 0.67 EUR |
| 100+ | 0.43 EUR |
| 500+ | 0.32 EUR |
| 1000+ | 0.29 EUR |
| CAT4240AGEVB |
|
Hersteller: onsemi
Description: BOARD EVAL FOR CAT4240
Description: BOARD EVAL FOR CAT4240
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NCP1653GEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR NCP1653
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: NCP1653
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
Part Status: Obsolete
Embedded: No
Description: EVAL BOARD FOR NCP1653
Contents: Board(s)
Supplied Contents: Board(s)
Utilized IC / Part: NCP1653
Type: Power Management
Function: Power Factor Correction
Packaging: Bulk
Part Status: Obsolete
Embedded: No
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| LV8727GEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR LV8727
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: LV8727
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
Description: EVAL BOARD FOR LV8727
Contents: Board(s)
Part Status: Active
Embedded: No
Supplied Contents: Board(s)
Utilized IC / Part: LV8727
Type: Power Management
Function: Motor Controller/Driver, Stepper
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH