| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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NCP565D2T33R4G | onsemi |
 Description: IC REG LINEAR 3.3V 1.5A D2PAK-3Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Output Type: Fixed Mounting Type: Surface Mount Current - Output: 1.5A Operating Temperature: -40°C ~ 125°C Output Configuration: Positive Current - Quiescent (Iq): 3 mA Voltage - Input (Max): 9V Number of Regulators: 1 Supplier Device Package: D2PAK-3 Voltage - Output (Min/Fixed): 3.3V Part Status: Active PSRR: 85dB ~ 75db (120Hz ~ 1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 1267 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV4276BDSADJR4G | onsemi |
Description: IC REG LIN POS ADJ 400MA D2PAK-5 Packaging: Cut Tape (CT) Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA Output Type: Adjustable Mounting Type: Surface Mount Current - Output: 400mA Operating Temperature: -40°C ~ 150°C Output Configuration: Positive Current - Quiescent (Iq): 200 µA Voltage - Input (Max): 45V Number of Regulators: 1 Supplier Device Package: D2PAK-5 Voltage - Output (Max): 20V Voltage - Output (Min/Fixed): 2.5V Control Features: Enable Grade: Automotive Part Status: Not For New Designs PSRR: 70dB (100Hz) Voltage Dropout (Max): 0.5V @ 250mA Protection Features: Over Temperature, Reverse Polarity, Short Circuit Current - Supply (Max): 35 mA Qualification: AEC-Q100 |
auf Bestellung 12779 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3N2304NZMNR4G | onsemi |
Description: IC CLK BUFFER 1:4 140MHZ 8DFN Packaging: Cut Tape (CT) Package / Case: 8-VFDFN Exposed Pad Number of Circuits: 1 Mounting Type: Surface Mount Output: LVCMOS, LVTTL Type: Fanout Buffer (Distribution) Input: LVCMOS, LVTTL Operating Temperature: -40°C ~ 85°C Voltage - Supply: 3V ~ 3.6V Ratio - Input:Output: 1:4 Differential - Input:Output: No/No Supplier Device Package: 8-DFN (2x2) Frequency - Max: 140 MHz |
auf Bestellung 1518 Stücke: Lieferzeit 10-14 Tag (e) |
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ADT7461AARMZ-R | onsemi |
Description: SENSOR DIGITAL -40C-120C MICRO8 Features: One-Shot, Output Switch, Programmable Limit, Standby Mode Packaging: Cut Tape (CT) Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width) Output Type: SMBus Mounting Type: Surface Mount Operating Temperature: -40°C ~ 120°C Voltage - Supply: 3V ~ 3.6V Sensor Type: Digital, Local/Remote Resolution: 8 b Supplier Device Package: 8-MSOP Test Condition: 0°C ~ 70°C (-40°C ~ 100°C) Accuracy - Highest (Lowest): ±1°C (±2.5°C) Sensing Temperature - Local: -40°C ~ 120°C Sensing Temperature - Remote: -64°C ~ 191°C |
auf Bestellung 5118 Stücke: Lieferzeit 10-14 Tag (e) |
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ADM1021AARQZ-R | onsemi |
Description: IC TEMP SENSOR DUAL3/5.5V 16QSOP Packaging: Cut Tape (CT) Package / Case: 16-SSOP (0.154", 3.90mm Width) Output Type: SMBus Mounting Type: Surface Mount Function: Temp Monitoring System (Sensor) Accuracy: ±3°C Local(Max), ±5°C Remote(Max) Operating Temperature: 0°C ~ 100°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Internal and External Sensing Temperature: 0°C ~ 100°C, External Sensor Topology: ADC, Comparator, Multiplexer, Register Bank Output Alarm: Yes Output Fan: No Supplier Device Package: 16-QSOP Part Status: Active |
auf Bestellung 1430 Stücke: Lieferzeit 10-14 Tag (e) |
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ADT7462ACPZ-REEL | onsemi |
Description: IC TEMP/VOLT MONITOR 32-LFCSP Packaging: Cut Tape (CT) Package / Case: 32-VFQFN Exposed Pad, CSP Output Type: SMBus Mounting Type: Surface Mount Function: Fan Control, Temp Monitor Accuracy: ±4°C(Max) Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 5.5V Sensor Type: Internal and External Sensing Temperature: -40°C ~ 125°C, External Sensor Topology: ADC, Comparator, Multiplexer, Register Bank Output Alarm: Yes Output Fan: Yes Supplier Device Package: 32-LFCSP-VQ (5x5) |
auf Bestellung 1878 Stücke: Lieferzeit 10-14 Tag (e) |
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NB6N14SMNR2G | onsemi |
Description: IC CLK BUFFER 1:4 2GHZ 16QFN Frequency - Max: 2 GHz Supplier Device Package: 16-QFN (3x3) Differential - Input:Output: Yes/Yes Ratio - Input:Output: 1:4 Voltage - Supply: 3V ~ 3.6V Operating Temperature: -40°C ~ 85°C Input: CML, LVDS, LVPECL Type: Fanout Buffer (Distribution), Translator Output: LVDS Mounting Type: Surface Mount Number of Circuits: 1 Package / Case: 16-VFQFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 1212 Stücke: Lieferzeit 10-14 Tag (e) |
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FEBSPM3SPM45-M01MTCA-GEVB | onsemi |
Description: EVAL BOARD FOR FNB41560 Part Status: Obsolete Embedded: No Primary Attributes: Motors (BLAC, BLDC, PMSM) Supplied Contents: Board(s) Utilized IC / Part: FNB41560 Type: Power Management Function: Motor Controller/Driver Packaging: Box Secondary Attributes: Short-Circuit Protection Contents: Board(s) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN7390AMX1 | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 14SOP Driven Configuration: Half-Bridge Channel Type: Independent Rise / Fall Time (Typ): 25ns, 20ns Supplier Device Package: 14-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -40°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 14-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) DigiKey Programmable: Not Verified Part Status: Last Time Buy Current - Peak Output (Source, Sink): 4.5A, 4.5A Logic Voltage - VIL, VIH: 1.2V, 2.5V Gate Type: IGBT, N-Channel MOSFET Number of Drivers: 2 |
auf Bestellung 1532 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB38N30U | onsemi |
Description: MOSFET N CH 300V 38A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 38A (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V Power Dissipation (Max): 313W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-263 (D2Pak) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±30V Drain to Source Voltage (Vdss): 300 V Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V |
auf Bestellung 3607 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8318R2 | onsemi |
Description: OPTOISO 4.243KV 1CH GT DVR 16SO Voltage - Output Supply: 15V ~ 30V Number of Channels: 1 Pulse Width Distortion (Max): 300ns Propagation Delay tpLH / tpHL (Max): 500ns, 500ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 34ns, 34ns Supplier Device Package: 16-SO Approval Agency: UL Voltage - Isolation: 4243Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMC86248 | onsemi |
Description: MOSFET N CH 150V 3.4A POWER33 Vgs(th) (Max) @ Id: 4V @ 250mA Power Dissipation (Max): 2.3W (Ta), 36W (Tc) Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: Power33 |
auf Bestellung 13540 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC7208S | onsemi |
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33 Supplier Device Package: 8-Power33 (3x3) Vgs(th) (Max) @ Id: 3V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V Current - Continuous Drain (Id) @ 25°C: 12A, 16A Drain to Source Voltage (Vdss): 30V Power - Max: 800mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 4145 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8820 | onsemi |
Description: MOSFET N-CH 30V 28A/116A 8PQFN Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 2.5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 21741 Stücke: Lieferzeit 10-14 Tag (e) |
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FXMHD103UMX | onsemi |
Description: IC INTERFACE SPECIALIZED 12UMLP Supplier Device Package: 12-UMLP (1.8x1.8) Applications: Cell Phones, Digital Cameras, Media Players Voltage - Supply: 1.6V ~ 3.6V Mounting Type: Surface Mount Package / Case: 12-UFQFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FXL6408UMX | onsemi |
Description: IC XPNDR 400KHZ I2C 16UMLP Packaging: Cut Tape (CT) Features: POR Package / Case: 16-UFQFN Output Type: Open Drain Mounting Type: Surface Mount Interface: I2C Number of I/O: 8 Operating Temperature: -40°C ~ 85°C Voltage - Supply: 1.65V ~ 4V Clock Frequency: 400 kHz Interrupt Output: Yes Supplier Device Package: 16-UMLP (1.8x2.6) Current - Output Source/Sink: 6mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 62840 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86101A | onsemi |
Description: MOSFET N-CH 100V 13A/60A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc) Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Power Dissipation (Max): 2.5W (Ta), 104W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V |
auf Bestellung 1169 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN53600AUC33X | onsemi |
Description: IC REG BUCK 3.3V 600MA 6WLCSP Part Status: Last Time Buy Voltage - Output (Min/Fixed): 3.3V Voltage - Input (Min): 2.3V Synchronous Rectifier: Yes Supplier Device Package: 6-WLCSP (1.23x0.88) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 3MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 600mA Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Fixed Package / Case: 6-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 6200 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN3227TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC DigiKey Programmable: Not Verified Qualification: AEC-Q100 Grade: Automotive Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A |
auf Bestellung 12240 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260 | onsemi |
Description: MOSFET N CH 150V 5.4A POWER 33 Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.3W (Ta), 54W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
auf Bestellung 1527 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8160R2 | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP Current - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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6N137SDVM | onsemi |
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Open Collector Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Supply: 4.5V ~ 5.5V Voltage - Forward (Vf) (Typ): 1.45V Data Rate: 10Mbps Input Type: DC Voltage - Isolation: 5000Vrms Current - DC Forward (If) (Max): 50mA Inputs - Side 1/Side 2: 1/0 Supplier Device Package: 8-SMD Rise / Fall Time (Typ): 30ns, 10ns Common Mode Transient Immunity (Min): 10kV/µs (Typ) Propagation Delay tpLH / tpHL (Max): 75ns, 75ns Part Status: Active Number of Channels: 1 Current - Output / Channel: 50 mA |
auf Bestellung 990 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMB2308PZ | onsemi |
Description: MOSFET 2P-CH 6MLP Packaging: Cut Tape (CT) Package / Case: 6-WDFN Exposed Pad Mounting Type: Surface Mount Configuration: 2 P-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 800mW Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.5V @ 250µA Supplier Device Package: 6-MLP (2x3) Part Status: Active |
auf Bestellung 2944 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86152 | onsemi |
Description: MOSFET N-CH 100V 14A/45A POWER56 Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 125W (Tc) Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V Drain to Source Voltage (Vdss): 100 V |
auf Bestellung 13963 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801CR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 131 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB390N15A | onsemi |
Description: MOSFET N-CH 150V 27A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V Current - Continuous Drain (Id) @ 25°C: 27A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 75W (Tc) |
auf Bestellung 1818 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3606AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/27A POWER56 Current - Continuous Drain (Id) @ 25°C: 13A, 27A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSA2866UMX | onsemi |
Description: IC ANALOG SWITCH 20UMLP Number of Channels: 1 Multiplexer/Demultiplexer Circuit: 2:2 Voltage - Supply, Single (V+): 1.65V ~ 4.3V -3db Bandwidth: 210MHz On-State Resistance (Max): 3.5Ohm Applications: Telecommunications Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-UFQFN Exposed Pad Features: Break-Before-Make Packaging: Cut Tape (CT) Supplier Device Package: 20-UMLP (3x3) |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3182TSR2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 730 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801BR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C |
auf Bestellung 1517086 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801AR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) |
auf Bestellung 131682 Stücke: Lieferzeit 10-14 Tag (e) |
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FXLP4555MPX | onsemi |
Description: IC XLTR VL BIDIR 16-MLP Packaging: Cut Tape (CT) Features: SIM Card Interface Package / Case: 16-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-MLP (3x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.7 V ~ 3.2 V Number of Circuits: 1 |
auf Bestellung 6619 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3182SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 15436 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3182SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C |
auf Bestellung 22195 Stücke: Lieferzeit 10-14 Tag (e) |
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FMBS2383 | onsemi |
Description: TRANS NPN 160V 0.8A SUPERSOT-6 Power - Max: 630 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FXLA0104QFX | onsemi |
Description: IC XLTR VL BIDIR 12-UMLP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 12-UMLP (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Number of Circuits: 1 |
auf Bestellung 4495 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN48632UC33X | onsemi |
Description: IC REG CONV GSM PA 1OUT 16WLCSP Supplier Device Package: 16-WLCSP (1.78x1.78) Applications: Converter, GSM PA Operating Temperature: -40°C ~ 85°C Voltage - Input: 2.35V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 3.3V, 3.49V Package / Case: 16-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAL200MTCX | onsemi |
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 4 Current - Leakage (IS(off)) (Max): 100µA Channel Capacitance (CS(off), CD(off)): 13pF Switch Time (Ton, Toff) (Max): 20ns, 10ns Channel-to-Channel Matching (ΔRon): 400mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 30MHz Charge Injection: 7pC Voltage - Supply, Single (V+): 3V ~ 5.5V Supplier Device Package: 16-TSSOP -3db Bandwidth: 137MHz On-State Resistance (Max): 12Ohm |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMD Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
auf Bestellung 157294 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMD Packaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD Packaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
auf Bestellung 157050 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50325AT | onsemi |
Description: MOSFET IPM 250V 1.7A 23-PWRDIP Packaging: Tube Package / Case: 23-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.7 A Voltage: 250 V |
Produkt ist nicht verfügbar |
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FSB50550A | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD Packaging: Tube Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Last Time Buy Current: 2 A Voltage: 500 V |
Produkt ist nicht verfügbar |
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FSB50550AT | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD Packaging: Tube Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
Produkt ist nicht verfügbar |
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FODM8801AV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tube |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801BV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 238284 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7171M-F085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Qualification: AEC-Q100 Grade: Automotive Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 25ns, 15ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 4A, 4A Logic Voltage - VIL, VIH: 0.8V, 2.5V |
auf Bestellung 3265 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF260N60E-F152 | onsemi |
Description: MOSFET N-CH 600V 15A TO220F Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDI045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP023N08B-F102 | onsemi |
Description: MOSFET N-CH 75V 120A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 1148 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP027N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V |
auf Bestellung 313 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP030N06B-F102 | onsemi |
Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V |
auf Bestellung 364 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP032N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3 Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 4868 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
auf Bestellung 952 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP085N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 96A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH15T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 30A TO-247 Switching Energy: 1.15mJ (on), 460µJ (off) Td (on/off) @ 25°C: 32ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Reverse Recovery Time (trr): 72 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 333 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Gate Charge: 128 nC Test Condition: 600V, 15A, 34Ohm, 15V |
Produkt ist nicht verfügbar |
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FGH25T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 50A TO-247 Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 428 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active Gate Charge: 225 nC Test Condition: 600V, 25A, 23Ohm, 15V Switching Energy: 1.74mJ (on), 560µJ (off) Td (on/off) @ 25°C: 40ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Reverse Recovery Time (trr): 60 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
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FGH30T65UPDT-F155 | onsemi |
Description: IGBT 650V 60A 250W TO247-3 Power - Max: 250 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 155 nC Test Condition: 400V, 30A, 8Ohm, 15V Switching Energy: 760µJ (on), 400µJ (off) Td (on/off) @ 25°C: 22ns/139ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Reverse Recovery Time (trr): 43 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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FGH40T120SMD | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
auf Bestellung 1670 Stücke: Lieferzeit 10-14 Tag (e) |
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| NCP565D2T33R4G |
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Hersteller: onsemi
Description: IC REG LINEAR 3.3V 1.5A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 85dB ~ 75db (120Hz ~ 1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 1.5A D2PAK-3
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 1.5A
Operating Temperature: -40°C ~ 125°C
Output Configuration: Positive
Current - Quiescent (Iq): 3 mA
Voltage - Input (Max): 9V
Number of Regulators: 1
Supplier Device Package: D2PAK-3
Voltage - Output (Min/Fixed): 3.3V
Part Status: Active
PSRR: 85dB ~ 75db (120Hz ~ 1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 1267 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.39 EUR |
| 10+ | 4.06 EUR |
| 25+ | 3.46 EUR |
| 100+ | 2.77 EUR |
| 250+ | 2.43 EUR |
| NCV4276BDSADJR4G |
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Hersteller: onsemi
Description: IC REG LIN POS ADJ 400MA D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Part Status: Not For New Designs
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
Description: IC REG LIN POS ADJ 400MA D2PAK-5
Packaging: Cut Tape (CT)
Package / Case: TO-263-6, D2PAK (5 Leads + Tab), TO-263BA
Output Type: Adjustable
Mounting Type: Surface Mount
Current - Output: 400mA
Operating Temperature: -40°C ~ 150°C
Output Configuration: Positive
Current - Quiescent (Iq): 200 µA
Voltage - Input (Max): 45V
Number of Regulators: 1
Supplier Device Package: D2PAK-5
Voltage - Output (Max): 20V
Voltage - Output (Min/Fixed): 2.5V
Control Features: Enable
Grade: Automotive
Part Status: Not For New Designs
PSRR: 70dB (100Hz)
Voltage Dropout (Max): 0.5V @ 250mA
Protection Features: Over Temperature, Reverse Polarity, Short Circuit
Current - Supply (Max): 35 mA
Qualification: AEC-Q100
auf Bestellung 12779 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.5 EUR |
| 25+ | 2.27 EUR |
| 100+ | 2.02 EUR |
| 250+ | 1.9 EUR |
| NB3N2304NZMNR4G |
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Hersteller: onsemi
Description: IC CLK BUFFER 1:4 140MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-DFN (2x2)
Frequency - Max: 140 MHz
Description: IC CLK BUFFER 1:4 140MHZ 8DFN
Packaging: Cut Tape (CT)
Package / Case: 8-VFDFN Exposed Pad
Number of Circuits: 1
Mounting Type: Surface Mount
Output: LVCMOS, LVTTL
Type: Fanout Buffer (Distribution)
Input: LVCMOS, LVTTL
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Ratio - Input:Output: 1:4
Differential - Input:Output: No/No
Supplier Device Package: 8-DFN (2x2)
Frequency - Max: 140 MHz
auf Bestellung 1518 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.55 EUR |
| 10+ | 5 EUR |
| 25+ | 4.71 EUR |
| 100+ | 4.01 EUR |
| 250+ | 3.77 EUR |
| 500+ | 3.3 EUR |
| ADT7461AARMZ-R |
|
Hersteller: onsemi
Description: SENSOR DIGITAL -40C-120C MICRO8
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 120°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 8 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: -40°C ~ 120°C
Sensing Temperature - Remote: -64°C ~ 191°C
Description: SENSOR DIGITAL -40C-120C MICRO8
Features: One-Shot, Output Switch, Programmable Limit, Standby Mode
Packaging: Cut Tape (CT)
Package / Case: 8-TSSOP, 8-MSOP (0.118", 3.00mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 120°C
Voltage - Supply: 3V ~ 3.6V
Sensor Type: Digital, Local/Remote
Resolution: 8 b
Supplier Device Package: 8-MSOP
Test Condition: 0°C ~ 70°C (-40°C ~ 100°C)
Accuracy - Highest (Lowest): ±1°C (±2.5°C)
Sensing Temperature - Local: -40°C ~ 120°C
Sensing Temperature - Remote: -64°C ~ 191°C
auf Bestellung 5118 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.72 EUR |
| 10+ | 8.23 EUR |
| 25+ | 7.6 EUR |
| 100+ | 6.91 EUR |
| 250+ | 6.59 EUR |
| 500+ | 6.39 EUR |
| 1000+ | 6.22 EUR |
| ADM1021AARQZ-R |
|
Hersteller: onsemi
Description: IC TEMP SENSOR DUAL3/5.5V 16QSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3°C Local(Max), ±5°C Remote(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 16-QSOP
Part Status: Active
Description: IC TEMP SENSOR DUAL3/5.5V 16QSOP
Packaging: Cut Tape (CT)
Package / Case: 16-SSOP (0.154", 3.90mm Width)
Output Type: SMBus
Mounting Type: Surface Mount
Function: Temp Monitoring System (Sensor)
Accuracy: ±3°C Local(Max), ±5°C Remote(Max)
Operating Temperature: 0°C ~ 100°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: 0°C ~ 100°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: No
Supplier Device Package: 16-QSOP
Part Status: Active
auf Bestellung 1430 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 11.16 EUR |
| 10+ | 8.57 EUR |
| 25+ | 7.91 EUR |
| 100+ | 7.21 EUR |
| 250+ | 6.87 EUR |
| 500+ | 6.66 EUR |
| 1000+ | 6.5 EUR |
| ADT7462ACPZ-REEL |
|
Hersteller: onsemi
Description: IC TEMP/VOLT MONITOR 32-LFCSP
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad, CSP
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±4°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: -40°C ~ 125°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 32-LFCSP-VQ (5x5)
Description: IC TEMP/VOLT MONITOR 32-LFCSP
Packaging: Cut Tape (CT)
Package / Case: 32-VFQFN Exposed Pad, CSP
Output Type: SMBus
Mounting Type: Surface Mount
Function: Fan Control, Temp Monitor
Accuracy: ±4°C(Max)
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 5.5V
Sensor Type: Internal and External
Sensing Temperature: -40°C ~ 125°C, External Sensor
Topology: ADC, Comparator, Multiplexer, Register Bank
Output Alarm: Yes
Output Fan: Yes
Supplier Device Package: 32-LFCSP-VQ (5x5)
auf Bestellung 1878 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.15 EUR |
| 10+ | 12.55 EUR |
| 25+ | 11.66 EUR |
| 100+ | 10.67 EUR |
| 250+ | 10.21 EUR |
| 500+ | 9.92 EUR |
| 1000+ | 9.69 EUR |
| NB6N14SMNR2G |
|
Hersteller: onsemi
Description: IC CLK BUFFER 1:4 2GHZ 16QFN
Frequency - Max: 2 GHz
Supplier Device Package: 16-QFN (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution), Translator
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
Description: IC CLK BUFFER 1:4 2GHZ 16QFN
Frequency - Max: 2 GHz
Supplier Device Package: 16-QFN (3x3)
Differential - Input:Output: Yes/Yes
Ratio - Input:Output: 1:4
Voltage - Supply: 3V ~ 3.6V
Operating Temperature: -40°C ~ 85°C
Input: CML, LVDS, LVPECL
Type: Fanout Buffer (Distribution), Translator
Output: LVDS
Mounting Type: Surface Mount
Number of Circuits: 1
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 1212 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 27.08 EUR |
| 10+ | 21.37 EUR |
| 25+ | 19.96 EUR |
| 100+ | 18.39 EUR |
| 250+ | 18.21 EUR |
| FEBSPM3SPM45-M01MTCA-GEVB |
|
Hersteller: onsemi
Description: EVAL BOARD FOR FNB41560
Part Status: Obsolete
Embedded: No
Primary Attributes: Motors (BLAC, BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: FNB41560
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Secondary Attributes: Short-Circuit Protection
Contents: Board(s)
Description: EVAL BOARD FOR FNB41560
Part Status: Obsolete
Embedded: No
Primary Attributes: Motors (BLAC, BLDC, PMSM)
Supplied Contents: Board(s)
Utilized IC / Part: FNB41560
Type: Power Management
Function: Motor Controller/Driver
Packaging: Box
Secondary Attributes: Short-Circuit Protection
Contents: Board(s)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN7390AMX1 |
|
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
Description: IC GATE DRVR HALF-BRIDGE 14SOP
Driven Configuration: Half-Bridge
Channel Type: Independent
Rise / Fall Time (Typ): 25ns, 20ns
Supplier Device Package: 14-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -40°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 14-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
DigiKey Programmable: Not Verified
Part Status: Last Time Buy
Current - Peak Output (Source, Sink): 4.5A, 4.5A
Logic Voltage - VIL, VIH: 1.2V, 2.5V
Gate Type: IGBT, N-Channel MOSFET
Number of Drivers: 2
auf Bestellung 1532 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.51 EUR |
| 10+ | 4.95 EUR |
| 25+ | 4.68 EUR |
| 100+ | 3.74 EUR |
| 250+ | 3.27 EUR |
| 500+ | 3.18 EUR |
| 1000+ | 2.52 EUR |
| FDB38N30U |
|
Hersteller: onsemi
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
Description: MOSFET N CH 300V 38A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 38A (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 19A, 10V
Power Dissipation (Max): 313W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 300 V
Gate Charge (Qg) (Max) @ Vgs: 73 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3340 pF @ 25 V
auf Bestellung 3607 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.69 EUR |
| 10+ | 5.74 EUR |
| 100+ | 4.06 EUR |
| FOD8318R2 |
|
Hersteller: onsemi
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 4.243KV 1CH GT DVR 16SO
Voltage - Output Supply: 15V ~ 30V
Number of Channels: 1
Pulse Width Distortion (Max): 300ns
Propagation Delay tpLH / tpHL (Max): 500ns, 500ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 34ns, 34ns
Supplier Device Package: 16-SO
Approval Agency: UL
Voltage - Isolation: 4243Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMC86248 |
|
Hersteller: onsemi
Description: MOSFET N CH 150V 3.4A POWER33
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
Description: MOSFET N CH 150V 3.4A POWER33
Vgs(th) (Max) @ Id: 4V @ 250mA
Power Dissipation (Max): 2.3W (Ta), 36W (Tc)
Rds On (Max) @ Id, Vgs: 90mOhm @ 3.4A, 10V
Current - Continuous Drain (Id) @ 25°C: 3.4A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 525 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 9 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: Power33
auf Bestellung 13540 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.67 EUR |
| 10+ | 2.81 EUR |
| 100+ | 2.2 EUR |
| 500+ | 1.87 EUR |
| 1000+ | 1.73 EUR |
| FDMC7208S |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 12A/16A 8PWR33
Supplier Device Package: 8-Power33 (3x3)
Vgs(th) (Max) @ Id: 3V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 18nC @ 10V
Rds On (Max) @ Id, Vgs: 9mOhm @ 12A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1130pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 12A, 16A
Drain to Source Voltage (Vdss): 30V
Power - Max: 800mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 4145 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.05 EUR |
| 10+ | 3.25 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.78 EUR |
| 1000+ | 1.64 EUR |
| FDMS8820 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 21741 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.05 EUR |
| FXMHD103UMX |
|
Hersteller: onsemi
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Cut Tape (CT)
Description: IC INTERFACE SPECIALIZED 12UMLP
Supplier Device Package: 12-UMLP (1.8x1.8)
Applications: Cell Phones, Digital Cameras, Media Players
Voltage - Supply: 1.6V ~ 3.6V
Mounting Type: Surface Mount
Package / Case: 12-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FXL6408UMX |
|
Hersteller: onsemi
Description: IC XPNDR 400KHZ I2C 16UMLP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC XPNDR 400KHZ I2C 16UMLP
Packaging: Cut Tape (CT)
Features: POR
Package / Case: 16-UFQFN
Output Type: Open Drain
Mounting Type: Surface Mount
Interface: I2C
Number of I/O: 8
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 1.65V ~ 4V
Clock Frequency: 400 kHz
Interrupt Output: Yes
Supplier Device Package: 16-UMLP (1.8x2.6)
Current - Output Source/Sink: 6mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 62840 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 22+ | 0.96 EUR |
| 31+ | 0.68 EUR |
| 35+ | 0.61 EUR |
| 100+ | 0.54 EUR |
| 250+ | 0.49 EUR |
| 500+ | 0.48 EUR |
| 1000+ | 0.45 EUR |
| 2500+ | 0.43 EUR |
| FDMS86101A |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
Description: MOSFET N-CH 100V 13A/60A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13A (Ta), 60A (Tc)
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Power Dissipation (Max): 2.5W (Ta), 104W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 58 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4120 pF @ 50 V
auf Bestellung 1169 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.23 EUR |
| 10+ | 5.43 EUR |
| 100+ | 3.83 EUR |
| 500+ | 3.27 EUR |
| FAN53600AUC33X |
|
Hersteller: onsemi
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BUCK 3.3V 600MA 6WLCSP
Part Status: Last Time Buy
Voltage - Output (Min/Fixed): 3.3V
Voltage - Input (Min): 2.3V
Synchronous Rectifier: Yes
Supplier Device Package: 6-WLCSP (1.23x0.88)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 3MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 600mA
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: 6-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 6200 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.31 EUR |
| 11+ | 2.05 EUR |
| 25+ | 1.71 EUR |
| 100+ | 1.33 EUR |
| 250+ | 1.15 EUR |
| 500+ | 1.04 EUR |
| 1000+ | 0.94 EUR |
| FAN3227TMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Description: IC GATE DRVR LOW-SIDE 8SOIC
DigiKey Programmable: Not Verified
Qualification: AEC-Q100
Grade: Automotive
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
auf Bestellung 12240 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.81 EUR |
| 11+ | 2.06 EUR |
| 25+ | 1.87 EUR |
| 100+ | 1.65 EUR |
| 250+ | 1.56 EUR |
| 500+ | 1.5 EUR |
| 1000+ | 1.48 EUR |
| FDMC86260 |
|
Hersteller: onsemi
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Description: MOSFET N CH 150V 5.4A POWER 33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 54W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 1527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.47 EUR |
| 10+ | 4.22 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.39 EUR |
| 1000+ | 2.37 EUR |
| FOD8160R2 |
|
Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.44 EUR |
| 10+ | 5.75 EUR |
| 100+ | 4.38 EUR |
| 500+ | 3.84 EUR |
| 6N137SDVM |
|
Hersteller: onsemi
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
Description: OPTOISOLTR 5KV OPEN COLL 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Open Collector
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Supply: 4.5V ~ 5.5V
Voltage - Forward (Vf) (Typ): 1.45V
Data Rate: 10Mbps
Input Type: DC
Voltage - Isolation: 5000Vrms
Current - DC Forward (If) (Max): 50mA
Inputs - Side 1/Side 2: 1/0
Supplier Device Package: 8-SMD
Rise / Fall Time (Typ): 30ns, 10ns
Common Mode Transient Immunity (Min): 10kV/µs (Typ)
Propagation Delay tpLH / tpHL (Max): 75ns, 75ns
Part Status: Active
Number of Channels: 1
Current - Output / Channel: 50 mA
auf Bestellung 990 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.93 EUR |
| 11+ | 2.08 EUR |
| 100+ | 1.57 EUR |
| 500+ | 1.33 EUR |
| FDMB2308PZ |
|
Hersteller: onsemi
Description: MOSFET 2P-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
Description: MOSFET 2P-CH 6MLP
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Configuration: 2 P-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 800mW
Input Capacitance (Ciss) (Max) @ Vds: 3030pF @ 10V
Rds On (Max) @ Id, Vgs: 36mOhm @ 5.7A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-MLP (2x3)
Part Status: Active
auf Bestellung 2944 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.01 EUR |
| 10+ | 3.24 EUR |
| 100+ | 2.23 EUR |
| 500+ | 1.83 EUR |
| FDMS86152 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Description: MOSFET N-CH 100V 14A/45A POWER56
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 125W (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 14A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 45A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 3370 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 50 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
auf Bestellung 13963 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.69 EUR |
| 10+ | 7.14 EUR |
| 100+ | 5.14 EUR |
| 500+ | 5.06 EUR |
| FODM8801CR2 |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.08 EUR |
| 10+ | 2.19 EUR |
| 100+ | 1.65 EUR |
| FDB390N15A |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 27A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
Description: MOSFET N-CH 150V 27A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 1285 pF @ 75 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Rds On (Max) @ Id, Vgs: 39mOhm @ 27A, 10V
Current - Continuous Drain (Id) @ 25°C: 27A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 75W (Tc)
auf Bestellung 1818 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.87 EUR |
| 10+ | 3.81 EUR |
| 100+ | 2.63 EUR |
| FDMS3606AS |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSA2866UMX |
Hersteller: onsemi
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 12+ | 1.87 EUR |
| 25+ | 1.77 EUR |
| FOD3182TSR2V |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 10+ | 4.37 EUR |
| 100+ | 3.42 EUR |
| FODM8801BR2 |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
auf Bestellung 1517086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.83 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.23 EUR |
| FODM8801AR2 |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
auf Bestellung 131682 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.31 EUR |
| FXLP4555MPX |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
auf Bestellung 6619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 33+ | 0.65 EUR |
| 37+ | 0.58 EUR |
| 100+ | 0.5 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.43 EUR |
| FOD3182SD |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 15436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.19 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.56 EUR |
| FOD3182SDV |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
auf Bestellung 22195 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 10+ | 4.37 EUR |
| 100+ | 3.42 EUR |
| 500+ | 2.99 EUR |
| FMBS2383 |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FXLA0104QFX |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 4495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 36+ | 0.58 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.45 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
| FAN48632UC33X |
|
Hersteller: onsemi
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 2.12 EUR |
| 25+ | 1.78 EUR |
| 100+ | 1.39 EUR |
| 250+ | 1.21 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |
| FSAL200MTCX |
Hersteller: onsemi
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.13 EUR |
| 5000+ | 1.09 EUR |
| FSB50250AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.04 EUR |
| 10+ | 10.94 EUR |
| 100+ | 8.12 EUR |
| FSB50550AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
auf Bestellung 157294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.1 EUR |
| 10+ | 13.14 EUR |
| 100+ | 10.21 EUR |
| FSB50250AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
auf Bestellung 157050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 450+ | 8.34 EUR |
| FSB50325AT |
|
Hersteller: onsemi
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550A |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550AT |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM8801AV |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.38 EUR |
| FODM8801BV |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 238284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.84 EUR |
| 11+ | 2.03 EUR |
| 150+ | 1.46 EUR |
| 600+ | 1.3 EUR |
| 1050+ | 1.24 EUR |
| 2100+ | 1.18 EUR |
| 5100+ | 1.11 EUR |
| 10050+ | 1.07 EUR |
| FAN7171M-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
auf Bestellung 3265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.01 EUR |
| 10+ | 4.5 EUR |
| 95+ | 3.72 EUR |
| 190+ | 3.56 EUR |
| 285+ | 3.49 EUR |
| 570+ | 3.37 EUR |
| 1045+ | 3.28 EUR |
| 2565+ | 3.19 EUR |
| FCPF260N60E-F152 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDI045N10A-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.09 EUR |
| 50+ | 5.3 EUR |
| FDP023N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 1148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.98 EUR |
| 50+ | 4.65 EUR |
| 100+ | 4.24 EUR |
| 500+ | 3.5 EUR |
| 1000+ | 3.26 EUR |
| FDP027N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
auf Bestellung 313 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.79 EUR |
| 50+ | 3.97 EUR |
| 100+ | 3.61 EUR |
| FDP030N06B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.89 EUR |
| 50+ | 2.95 EUR |
| 100+ | 2.67 EUR |
| FDP032N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 4868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.1 EUR |
| 50+ | 3.61 EUR |
| 100+ | 3.27 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.49 EUR |
| 2000+ | 2.38 EUR |
| FDP045N10A-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.73 EUR |
| 50+ | 5.09 EUR |
| 100+ | 4.64 EUR |
| 500+ | 3.86 EUR |
| FDP085N10A-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.45 EUR |
| 50+ | 3.25 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.39 EUR |
| FGH15T120SMD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH25T120SMD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH30T65UPDT-F155 |
|
Hersteller: onsemi
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH40T120SMD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
auf Bestellung 1670 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.33 EUR |
| 30+ | 10.84 EUR |
| 120+ | 9.2 EUR |
| 510+ | 8.43 EUR |