FDMS3660S_F121 ON Semiconductor / Fairchild
Hersteller: ON Semiconductor / FairchildMOSFET PowerTrench PowerStage Asymmetric Dual N-Channel MOSFET
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Technische Details FDMS3660S_F121 ON Semiconductor / Fairchild
Description: MOSFET 2N-CH 30V 13A/30A POWER56, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Asymmetrical, Technology: MOSFET (Metal Oxide), Power - Max: 1W, Drain to Source Voltage (Vdss): 30V, Current - Continuous Drain (Id) @ 25°C: 13A, 30A, Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V, Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V, Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 2.7V @ 250µA, Supplier Device Package: Power56.
Weitere Produktangebote FDMS3660S_F121
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FDMS3660S-F121 | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |
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FDMS3660S-F121 | Hersteller : onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Asymmetrical Technology: MOSFET (Metal Oxide) Power - Max: 1W Drain to Source Voltage (Vdss): 30V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 2.7V @ 250µA Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |