Technische Details NGTB20N120IHRWG ON Semiconductor
Description: IGBT TRENCH/FS 1200V 40A TO247, Packaging: Tube, Package / Case: TO-247-3, Mounting Type: Through Hole, Operating Temperature: -40°C ~ 175°C (TJ), Input Type: Standard, Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A, Supplier Device Package: TO-247, IGBT Type: Trench Field Stop, Td (on/off) @ 25°C: -/235ns, Switching Energy: 450µJ (off), Test Condition: 600V, 20A, 10Ohm, 15V, Gate Charge: 225 nC, Part Status: Obsolete, Current - Collector (Ic) (Max): 40 A, Voltage - Collector Emitter Breakdown (Max): 1200 V, Current - Collector Pulsed (Icm): 120 A, Power - Max: 384 W.
Weitere Produktangebote NGTB20N120IHRWG
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NGTB20N120IHRWG Produktcode: 151548 |
 Transistoren > Transistoren IGBT, Leistungsmodule |
Produkt ist nicht verfügbar
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NGTB20N120IHRWG | Hersteller : ON Semiconductor |
Trans IGBT Chip N-CH 1200V 40A 384000mW 3-Pin(3+Tab) TO-247 Tube |
Produkt ist nicht verfügbar |
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NGTB20N120IHRWG | Hersteller : onsemi |
Description: IGBT TRENCH/FS 1200V 40A TO247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.45V @ 15V, 20A Supplier Device Package: TO-247 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: -/235ns Switching Energy: 450µJ (off) Test Condition: 600V, 20A, 10Ohm, 15V Gate Charge: 225 nC Part Status: Obsolete Current - Collector (Ic) (Max): 40 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 120 A Power - Max: 384 W |
Produkt ist nicht verfügbar |
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NGTB20N120IHRWG | Hersteller : onsemi |
IGBT Transistors 1200V/20A RC IGBT FSII |
Produkt ist nicht verfügbar |