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FDMF6824A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFNCurrent - Output / Channel: 60A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS037N08B | onsemi |
Description: MOSFET N-CH 75V 100A 8PQFNOperating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 830mW (Ta), 104.2W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3660AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS3660S-F121 | onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86202 | onsemi |
Description: MOSFET N-CH 120V 13.5A POWER56Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86550 | onsemi |
Description: MOSFET N-CH 60V 32A/155A POWER56Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC4044 | onsemi |
Description: MOSFET 2N-CH POWERCLIP-33Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDT1600N10ALZ | onsemi |
Description: MOSFET N-CH 100V 5.6A SOT223-4Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V Power Dissipation (Max): 10.42W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FGD3040G2-F085 | onsemi |
Description: IGBT 400V 41A TO-252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3440G2-F085 | onsemi |
Description: IGBT 400V 26.9A TO-252AAPackaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: -/5.3µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 24 nC Current - Collector (Ic) (Max): 26.9 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 166 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM8801AR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801BR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 210000 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD9N25TM-F085 | onsemi |
Description: MOSFET N-CH 250V 7.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ISL9V5045S3ST-F085 | onsemi |
Description: IGBT 480V 51A TO-263Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: -/10.8µs Test Condition: 300V, 1kOhm, 5V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 480 V Power - Max: 300 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2400 Stücke: Lieferzeit 10-14 Tag (e) |
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RURD4120S9A-F085 | onsemi |
Description: DIODE GEN PURP 1.2KV 4A TO252AAMounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 100 µA @ 1200 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A Voltage - DC Reverse (Vr) (Max): 1200 V Grade: Automotive Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-252AA Current - Average Rectified (Io): 4A Technology: Avalanche Reverse Recovery Time (trr): 90 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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RURD660S9A-F085 | onsemi |
Description: DIODE GEN PURP 600V 6A TO252AA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN48630UC50X | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSPFunction: Step-Up Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 16-UFBGA, WLCSP Packaging: Tape & Reel (TR) Voltage - Output (Min/Fixed): 5V, 5.29V Voltage - Input (Min): 2.35V Synchronous Rectifier: Yes Supplier Device Package: 16-WLCSP (1.78x1.78) Topology: Boost Voltage - Input (Max): 5.5V Frequency - Switching: 2.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 1.5A (Switch) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN53555UC04X | onsemi |
Description: IC REG BUCK PROG 5A 20WLCSPPart Status: Active Voltage - Output (Min/Fixed): 0.603V Voltage - Input (Min): 2.5V Voltage - Output (Max): 1.41V Synchronous Rectifier: Yes Supplier Device Package: 20-WLCSP (1.96x1.56) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 2.4MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 5A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 20-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN54013BUCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 20WLCSPPart Status: Obsolete Current - Charging: Constant - Programmable Battery Pack Voltage: 4.5V (Max) Voltage - Supply (Max): 6V Fault Protection: Over Temperature, Over Voltage, Short Circuit Programmable Features: Current, Timer, Voltage Charge Current - Max: 1.45A Supplier Device Package: 20-WLCSP (1.96x1.56) Battery Chemistry: Lithium Ion/Polymer Operating Temperature: -30°C ~ 85°C (TA) Interface: I2C, USB Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 20-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMA908PZ | onsemi |
Description: MOSFET P-CH 12V 12A 6MICROFETInput Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 23650 Stücke: Lieferzeit 10-14 Tag (e) |
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FDZ1323NZ | onsemi |
Description: MOSFET 2N-CH 20V 10A 6WLCSPPart Status: Active Supplier Device Package: 6-WLCSP (1.3x2.3) Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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FHR1200 | onsemi |
Description: TRANS NPN 100V 0.05A SC88Power - Max: 227 mW Voltage - Collector Emitter Breakdown (Max): 100 V Current - Collector (Ic) (Max): 50 mA Supplier Device Package: SC-88 (SC-70-6) Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN + Zener Diode (Isolated) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FOD8160R2V | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOPCurrent - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Tape & Reel (TR) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1504BUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSPVoltage - Load: 1V ~ 3.6V Input Type: Non-Inverting Rds On (Typ): 15mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 4-UFBGA, WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Tape & Reel (TR) Part Status: Active Supplier Device Package: 4-WLCSP (0.96x0.96) Ratio - Input:Output: 1:1 Current - Output (Max): 1.5A Voltage - Supply (Vcc/Vdd): Not Required |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1504LUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSA831AL10X | onsemi |
Description: IC BATT MFUNC 10MICROPAKFault Protection: Over Voltage Supplier Device Package: 10-MicroPak™ Operating Temperature: -40°C ~ 85°C (TA) Interface: USB Function: Multi-Function Controller Mounting Type: Surface Mount Package / Case: 10-UFQFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA832L10X | onsemi |
Description: IC BATT MFUNC 10MICROPAK |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSA880UMX_F106 | onsemi |
Description: IC BATT MFUNC 16UMLPPart Status: Obsolete Fault Protection: Over Voltage Supplier Device Package: 16-UMLP (1.8x2.6) Operating Temperature: -40°C ~ 85°C (TA) Interface: I²C, USB Function: Multi-Function Controller Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN3122TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 10.6A, 11.4A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: Low-Side Channel Type: Single Rise / Fall Time (Typ): 23ns, 19ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 3659 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN3224TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICPackaging: Cut Tape (CT) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 6273 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN3226TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICChannel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Driven Configuration: Low-Side Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 |
auf Bestellung 2231 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN3227CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICRise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent |
auf Bestellung 2349 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN3228CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOICQualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Cut Tape (CT) Current - Peak Output (Source, Sink): 3A, 3A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCD620N60ZF | onsemi |
Description: MOSFET N-CH 600V 7.3A DPAKPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD900N60Z | onsemi |
Description: MOSFET N-CH 600V 4.5A TO252Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) |
auf Bestellung 11542 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD120AN15A0-F085 | onsemi |
Description: MOSFET N-CH 150V 14A DPAKInput Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
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FDD1600N10ALZ | onsemi |
Description: MOSFET N-CH 100V 6.8A TO252Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V Power Dissipation (Max): 14.9W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
auf Bestellung 22669 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC0310AS-F127 | onsemi |
Description: MOSFET N-CH 30V 21A 8MLPInput Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 1mA Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Cut Tape (CT) |
auf Bestellung 32742 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS037N08B | onsemi |
Description: MOSFET N-CH 75V 100A 8PQFNSupplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 830mW (Ta), 104.2W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active |
auf Bestellung 15898 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3660S-F121 | onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86202 | onsemi |
Description: MOSFET N-CH 120V 13.5A POWER56Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) |
auf Bestellung 1924 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86550 | onsemi |
Description: MOSFET N-CH 60V 32A/155A POWER56Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V |
auf Bestellung 4347 Stücke: Lieferzeit 10-14 Tag (e) |
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FDT1600N10ALZ | onsemi |
Description: MOSFET N-CH 100V 5.6A SOT223-4Packaging: Cut Tape (CT) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V Power Dissipation (Max): 10.42W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
auf Bestellung 643 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3040G2-F085 | onsemi |
Description: IGBT 400V 41A TO-252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 3453 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3440G2-F085 | onsemi |
Description: IGBT 400V 26.9A TO-252AAPackaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: -/5.3µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 24 nC Current - Collector (Ic) (Max): 26.9 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 166 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 372 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801AR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 4888 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801BR2V | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLATCurrent - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) |
auf Bestellung 210560 Stücke: Lieferzeit 10-14 Tag (e) |
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FQD9N25TM-F085 | onsemi |
Description: MOSFET N-CH 250V 7.4A DPAK Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 5V @ 250µA Power Dissipation (Max): 2.5W (Ta), 55W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Cut Tape (CT) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ISL9V5045S3ST-F085 | onsemi |
Description: IGBT 480V 51A TO-263Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -40°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A Supplier Device Package: TO-263 (D2Pak) Td (on/off) @ 25°C: -/10.8µs Test Condition: 300V, 1kOhm, 5V Gate Charge: 32 nC Part Status: Active Current - Collector (Ic) (Max): 51 A Voltage - Collector Emitter Breakdown (Max): 480 V Power - Max: 300 W Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2692 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN48630UC50X | onsemi |
Description: IC REG BOOST PROG 1.5A 16WLCSPVoltage - Output (Min/Fixed): 5V, 5.29V Voltage - Input (Min): 2.35V Synchronous Rectifier: Yes Supplier Device Package: 16-WLCSP (1.78x1.78) Topology: Boost Voltage - Input (Max): 5.5V Frequency - Switching: 2.5MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 1.5A (Switch) Function: Step-Up Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 16-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 24 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN53555UC04X | onsemi |
Description: IC REG BUCK PROG 5A 20WLCSPPart Status: Active Voltage - Output (Min/Fixed): 0.603V Voltage - Input (Min): 2.5V Voltage - Output (Max): 1.41V Synchronous Rectifier: Yes Supplier Device Package: 20-WLCSP (1.96x1.56) Topology: Buck Voltage - Input (Max): 5.5V Frequency - Switching: 2.4MHz Output Configuration: Positive Operating Temperature: -40°C ~ 85°C (TA) Current - Output: 5A Function: Step-Down Number of Outputs: 1 Mounting Type: Surface Mount Output Type: Programmable Package / Case: 20-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 2706 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA908PZ | onsemi |
Description: MOSFET P-CH 12V 12A 6MICROFETInput Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Active Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V Current - Continuous Drain (Id) @ 25°C: 12A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 23804 Stücke: Lieferzeit 10-14 Tag (e) |
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FDZ1323NZ | onsemi |
Description: MOSFET 2N-CH 20V 10A 6WLCSPPart Status: Active Supplier Device Package: 6-WLCSP (1.3x2.3) Vgs(th) (Max) @ Id: 1.2V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V Current - Continuous Drain (Id) @ 25°C: 10A Drain to Source Voltage (Vdss): 20V Power - Max: 500mW Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 6-XFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 28663 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8160R2V | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5SOPCurrent - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Cut Tape (CT) |
auf Bestellung 12880 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1504BUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSPPart Status: Active Supplier Device Package: 4-WLCSP (0.96x0.96) Ratio - Input:Output: 1:1 Current - Output (Max): 1.5A Voltage - Supply (Vcc/Vdd): Not Required Voltage - Load: 1V ~ 3.6V Input Type: Non-Inverting Rds On (Typ): 15mOhm Output Configuration: High Side Operating Temperature: -40°C ~ 85°C (TA) Switch Type: General Purpose Interface: On/Off Number of Outputs: 1 Mounting Type: Surface Mount Output Type: P-Channel Package / Case: 4-UFBGA, WLCSP Features: Load Discharge, Slew Rate Controlled Packaging: Cut Tape (CT) |
auf Bestellung 6342 Stücke: Lieferzeit 10-14 Tag (e) |
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FPF1504LUCX | onsemi |
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP |
auf Bestellung 8 Stücke: Lieferzeit 10-14 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSA3200UMX-F106 | onsemi |
Description: IC ANALOG USB VID SWITCH 16UMLPPart Status: Obsolete Supplier Device Package: 16-UMLP (1.8x2.6) Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSA831AL10X | onsemi |
Description: IC BATT MFUNC 10MICROPAKPackaging: Cut Tape (CT) Fault Protection: Over Voltage Supplier Device Package: 10-MicroPak™ Operating Temperature: -40°C ~ 85°C (TA) Interface: USB Function: Multi-Function Controller Mounting Type: Surface Mount Package / Case: 10-UFQFN Exposed Pad |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA832L10X | onsemi |
Description: IC BATT MFUNC 10MICROPAK |
auf Bestellung 648 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA880UMX_F106 | onsemi |
Description: IC BATT MFUNC 16UMLPPart Status: Obsolete Fault Protection: Over Voltage Supplier Device Package: 16-UMLP (1.8x2.6) Operating Temperature: -40°C ~ 85°C (TA) Interface: I²C, USB Function: Multi-Function Controller Mounting Type: Surface Mount Package / Case: 16-UFQFN Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMF6824A |
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Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 2.45 EUR |
| FDMS037N08B |
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Hersteller: onsemi
Description: MOSFET N-CH 75V 100A 8PQFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 100A 8PQFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 1.83 EUR |
| FDMS3660AS |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
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| FDMS3660S-F121 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
Produkt ist nicht verfügbar
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| FDMS86202 |
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Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| FDMS86550 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 4.92 EUR |
| FDPC4044 |
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Hersteller: onsemi
Description: MOSFET 2N-CH POWERCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Obsolete
Description: MOSFET 2N-CH POWERCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Obsolete
Produkt ist nicht verfügbar
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| FDT1600N10ALZ |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Produkt ist nicht verfügbar
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| FGD3040G2-F085 |
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Hersteller: onsemi
Description: IGBT 400V 41A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 41A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.02 EUR |
| FGD3440G2-F085 |
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Hersteller: onsemi
Description: IGBT 400V 26.9A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/5.3µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 26.9A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/5.3µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| FODM8801AR2V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 1.04 EUR |
| FODM8801BR2V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 210000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.96 EUR |
| 5000+ | 0.92 EUR |
| 7500+ | 0.9 EUR |
| 12500+ | 0.88 EUR |
| FQD9N25TM-F085 |
Hersteller: onsemi
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
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| ISL9V5045S3ST-F085 |
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Hersteller: onsemi
Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 480V 51A TO-263
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 800+ | 3.33 EUR |
| RURD4120S9A-F085 |
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Hersteller: onsemi
Description: DIODE GEN PURP 1.2KV 4A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE GEN PURP 1.2KV 4A TO252AA
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 100 µA @ 1200 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 4 A
Voltage - DC Reverse (Vr) (Max): 1200 V
Grade: Automotive
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-252AA
Current - Average Rectified (Io): 4A
Technology: Avalanche
Reverse Recovery Time (trr): 90 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2500+ | 0.73 EUR |
| RURD660S9A-F085 |
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Hersteller: onsemi
Description: DIODE GEN PURP 600V 6A TO252AA
Description: DIODE GEN PURP 600V 6A TO252AA
Produkt ist nicht verfügbar
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| FAN48630UC50X |
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Hersteller: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 5V, 5.29V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Description: IC REG BOOST PROG 1.5A 16WLCSP
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Voltage - Output (Min/Fixed): 5V, 5.29V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Produkt ist nicht verfügbar
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| FAN53555UC04X |
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Hersteller: onsemi
Description: IC REG BUCK PROG 5A 20WLCSP
Part Status: Active
Voltage - Output (Min/Fixed): 0.603V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 1.41V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC REG BUCK PROG 5A 20WLCSP
Part Status: Active
Voltage - Output (Min/Fixed): 0.603V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 1.41V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| FAN54013BUCX |
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Hersteller: onsemi
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Part Status: Obsolete
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 6V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.45A
Supplier Device Package: 20-WLCSP (1.96x1.56)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC BATT CHG LI-ION 1CELL 20WLCSP
Part Status: Obsolete
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 6V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.45A
Supplier Device Package: 20-WLCSP (1.96x1.56)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C, USB
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 20-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMA908PZ |
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Hersteller: onsemi
Description: MOSFET P-CH 12V 12A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 12A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 23650 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.54 EUR |
| 6000+ | 0.5 EUR |
| 9000+ | 0.48 EUR |
| 15000+ | 0.47 EUR |
| FDZ1323NZ |
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Hersteller: onsemi
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.3x2.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.3x2.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.9 EUR |
| FHR1200 |
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Hersteller: onsemi
Description: TRANS NPN 100V 0.05A SC88
Power - Max: 227 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SC-88 (SC-70-6)
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN + Zener Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: TRANS NPN 100V 0.05A SC88
Power - Max: 227 mW
Voltage - Collector Emitter Breakdown (Max): 100 V
Current - Collector (Ic) (Max): 50 mA
Supplier Device Package: SC-88 (SC-70-6)
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN + Zener Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FOD8160R2V |
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Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tape & Reel (TR)
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tape & Reel (TR)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 1000+ | 2.71 EUR |
| 2000+ | 2.61 EUR |
| 3000+ | 2.55 EUR |
| 5000+ | 2.5 EUR |
| FPF1504BUCX |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Tape & Reel (TR)
Part Status: Active
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3000+ | 0.32 EUR |
| 6000+ | 0.3 EUR |
| FPF1504LUCX |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSA831AL10X |
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Hersteller: onsemi
Description: IC BATT MFUNC 10MICROPAK
Fault Protection: Over Voltage
Supplier Device Package: 10-MicroPak™
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: IC BATT MFUNC 10MICROPAK
Fault Protection: Over Voltage
Supplier Device Package: 10-MicroPak™
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5000+ | 0.54 EUR |
| FSA832L10X |
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Hersteller: onsemi
Description: IC BATT MFUNC 10MICROPAK
Description: IC BATT MFUNC 10MICROPAK
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSA880UMX_F106 |
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Hersteller: onsemi
Description: IC BATT MFUNC 16UMLP
Part Status: Obsolete
Fault Protection: Over Voltage
Supplier Device Package: 16-UMLP (1.8x2.6)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I²C, USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Description: IC BATT MFUNC 16UMLP
Part Status: Obsolete
Fault Protection: Over Voltage
Supplier Device Package: 16-UMLP (1.8x2.6)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I²C, USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3122TMX-F085 |
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Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 23ns, 19ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 10.6A, 11.4A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: Low-Side
Channel Type: Single
Rise / Fall Time (Typ): 23ns, 19ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 3659 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.5 EUR |
| 10+ | 2.59 EUR |
| 25+ | 2.37 EUR |
| 100+ | 2.12 EUR |
| 250+ | 2 EUR |
| 500+ | 1.93 EUR |
| 1000+ | 1.87 EUR |
| FAN3224TMX-F085 |
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Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 6273 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.69 EUR |
| 10+ | 1.98 EUR |
| 25+ | 1.8 EUR |
| 100+ | 1.61 EUR |
| 250+ | 1.51 EUR |
| 500+ | 1.46 EUR |
| 1000+ | 1.41 EUR |
| FAN3226TMX-F085 |
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Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Driven Configuration: Low-Side
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Description: IC GATE DRVR LOW-SIDE 8SOIC
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Driven Configuration: Low-Side
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
auf Bestellung 2231 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 4.07 EUR |
| 10+ | 2.54 EUR |
| 25+ | 2.15 EUR |
| 100+ | 1.7 EUR |
| 250+ | 1.48 EUR |
| 500+ | 1.35 EUR |
| 1000+ | 1.23 EUR |
| FAN3227CMX-F085 |
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Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Description: IC GATE DRVR LOW-SIDE 8SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
auf Bestellung 2349 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.39 EUR |
| 10+ | 4.1 EUR |
| 25+ | 3.5 EUR |
| 100+ | 2.83 EUR |
| 250+ | 2.5 EUR |
| 500+ | 2.29 EUR |
| 1000+ | 2.12 EUR |
| FAN3228CMX-F085 |
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Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 3A, 3A
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Current - Peak Output (Source, Sink): 3A, 3A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD620N60ZF |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.47 EUR |
| 10+ | 2.9 EUR |
| 100+ | 1.99 EUR |
| 500+ | 1.61 EUR |
| 1000+ | 1.52 EUR |
| FCD900N60Z |
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Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 11542 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.64 EUR |
| 10+ | 2.34 EUR |
| 100+ | 1.6 EUR |
| 500+ | 1.28 EUR |
| 1000+ | 1.26 EUR |
| FDD120AN15A0-F085 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 150V 14A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDD1600N10ALZ |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 6.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 6.8A TO252
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
auf Bestellung 22669 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.46 EUR |
| 12+ | 1.56 EUR |
| 100+ | 1.04 EUR |
| 500+ | 0.82 EUR |
| 1000+ | 0.74 EUR |
| FDMC0310AS-F127 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 30V 21A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Cut Tape (CT)
auf Bestellung 32742 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.76 EUR |
| 15+ | 1.19 EUR |
| 100+ | 0.82 EUR |
| 500+ | 0.66 EUR |
| 1000+ | 0.61 EUR |
| FDMS037N08B |
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Hersteller: onsemi
Description: MOSFET N-CH 75V 100A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Description: MOSFET N-CH 75V 100A 8PQFN
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
auf Bestellung 15898 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.44 EUR |
| 10+ | 3.2 EUR |
| 100+ | 2.32 EUR |
| 500+ | 2 EUR |
| 1000+ | 1.89 EUR |
| FDMS3660S-F121 |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86202 |
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Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
auf Bestellung 1924 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 7.87 EUR |
| 10+ | 5.24 EUR |
| 100+ | 3.74 EUR |
| 500+ | 3.57 EUR |
| FDMS86550 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
auf Bestellung 4347 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 2+ | 12.44 EUR |
| 10+ | 8.44 EUR |
| 100+ | 6.18 EUR |
| 500+ | 6.02 EUR |
| FDT1600N10ALZ |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
auf Bestellung 643 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 10+ | 1.9 EUR |
| 15+ | 1.19 EUR |
| 100+ | 0.78 EUR |
| 500+ | 0.61 EUR |
| FGD3040G2-F085 |
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Hersteller: onsemi
Description: IGBT 400V 41A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 41A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3453 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.52 EUR |
| 10+ | 2.25 EUR |
| 100+ | 1.53 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.19 EUR |
| FGD3440G2-F085 |
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Hersteller: onsemi
Description: IGBT 400V 26.9A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/5.3µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 26.9A TO-252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.2V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: -/5.3µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 24 nC
Current - Collector (Ic) (Max): 26.9 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 166 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 372 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 4+ | 4.89 EUR |
| 10+ | 3.19 EUR |
| 100+ | 2.22 EUR |
| FODM8801AR2V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 4888 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 7+ | 2.53 EUR |
| 10+ | 1.8 EUR |
| 100+ | 1.36 EUR |
| 500+ | 1.17 EUR |
| 1000+ | 1.11 EUR |
| FODM8801BR2V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
auf Bestellung 210560 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 8+ | 2.38 EUR |
| 11+ | 1.69 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1.03 EUR |
| FQD9N25TM-F085 |
Hersteller: onsemi
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Description: MOSFET N-CH 250V 7.4A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 700 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 55W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 3.7A, 10V
Current - Continuous Drain (Id) @ 25°C: 7.4A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
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| ISL9V5045S3ST-F085 |
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Hersteller: onsemi
Description: IGBT 480V 51A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 480V 51A TO-263
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.6V @ 4V, 10A
Supplier Device Package: TO-263 (D2Pak)
Td (on/off) @ 25°C: -/10.8µs
Test Condition: 300V, 1kOhm, 5V
Gate Charge: 32 nC
Part Status: Active
Current - Collector (Ic) (Max): 51 A
Voltage - Collector Emitter Breakdown (Max): 480 V
Power - Max: 300 W
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2692 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 8.66 EUR |
| 10+ | 5.8 EUR |
| 100+ | 4.17 EUR |
| FAN48630UC50X |
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Hersteller: onsemi
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Output (Min/Fixed): 5V, 5.29V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BOOST PROG 1.5A 16WLCSP
Voltage - Output (Min/Fixed): 5V, 5.29V
Voltage - Input (Min): 2.35V
Synchronous Rectifier: Yes
Supplier Device Package: 16-WLCSP (1.78x1.78)
Topology: Boost
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.5MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 1.5A (Switch)
Function: Step-Up
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 24 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 5+ | 3.61 EUR |
| 10+ | 2.25 EUR |
| FAN53555UC04X |
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Hersteller: onsemi
Description: IC REG BUCK PROG 5A 20WLCSP
Part Status: Active
Voltage - Output (Min/Fixed): 0.603V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 1.41V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG BUCK PROG 5A 20WLCSP
Part Status: Active
Voltage - Output (Min/Fixed): 0.603V
Voltage - Input (Min): 2.5V
Voltage - Output (Max): 1.41V
Synchronous Rectifier: Yes
Supplier Device Package: 20-WLCSP (1.96x1.56)
Topology: Buck
Voltage - Input (Max): 5.5V
Frequency - Switching: 2.4MHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C (TA)
Current - Output: 5A
Function: Step-Down
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: Programmable
Package / Case: 20-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 2706 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 12+ | 1.57 EUR |
| 16+ | 1.12 EUR |
| 25+ | 1.02 EUR |
| 100+ | 0.89 EUR |
| 250+ | 0.84 EUR |
| 500+ | 0.8 EUR |
| 1000+ | 0.77 EUR |
| FDMA908PZ |
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Hersteller: onsemi
Description: MOSFET P-CH 12V 12A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 12V 12A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 3957 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 34 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 12.5mOhm @ 12A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 23804 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 9+ | 2.13 EUR |
| 14+ | 1.33 EUR |
| 100+ | 0.88 EUR |
| 500+ | 0.68 EUR |
| 1000+ | 0.62 EUR |
| FDZ1323NZ |
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Hersteller: onsemi
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.3x2.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Part Status: Active
Supplier Device Package: 6-WLCSP (1.3x2.3)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Current - Continuous Drain (Id) @ 25°C: 10A
Drain to Source Voltage (Vdss): 20V
Power - Max: 500mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 6-XFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 28663 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 6+ | 3.41 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.42 EUR |
| 500+ | 1.13 EUR |
| 1000+ | 0.97 EUR |
| 2000+ | 0.96 EUR |
| FOD8160R2V |
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Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV OPEN COLLECTOR 5SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Cut Tape (CT)
auf Bestellung 12880 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 6.37 EUR |
| 10+ | 4.31 EUR |
| 100+ | 3.26 EUR |
| 500+ | 2.84 EUR |
| FPF1504BUCX |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Part Status: Active
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Part Status: Active
Supplier Device Package: 4-WLCSP (0.96x0.96)
Ratio - Input:Output: 1:1
Current - Output (Max): 1.5A
Voltage - Supply (Vcc/Vdd): Not Required
Voltage - Load: 1V ~ 3.6V
Input Type: Non-Inverting
Rds On (Typ): 15mOhm
Output Configuration: High Side
Operating Temperature: -40°C ~ 85°C (TA)
Switch Type: General Purpose
Interface: On/Off
Number of Outputs: 1
Mounting Type: Surface Mount
Output Type: P-Channel
Package / Case: 4-UFBGA, WLCSP
Features: Load Discharge, Slew Rate Controlled
Packaging: Cut Tape (CT)
auf Bestellung 6342 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 19+ | 0.97 EUR |
| 22+ | 0.84 EUR |
| 25+ | 0.78 EUR |
| 100+ | 0.58 EUR |
| 250+ | 0.49 EUR |
| 500+ | 0.47 EUR |
| 1000+ | 0.35 EUR |
| FPF1504LUCX |
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Hersteller: onsemi
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
Description: IC PWR SWITCH P-CHAN 1:1 4WLCSP
auf Bestellung 8 Stücke:
Lieferzeit 10-14 Tag (e)
| FSA3200UMX-F106 |
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Hersteller: onsemi
Description: IC ANALOG USB VID SWITCH 16UMLP
Part Status: Obsolete
Supplier Device Package: 16-UMLP (1.8x2.6)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Description: IC ANALOG USB VID SWITCH 16UMLP
Part Status: Obsolete
Supplier Device Package: 16-UMLP (1.8x2.6)
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSA831AL10X |
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Hersteller: onsemi
Description: IC BATT MFUNC 10MICROPAK
Packaging: Cut Tape (CT)
Fault Protection: Over Voltage
Supplier Device Package: 10-MicroPak™
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
Description: IC BATT MFUNC 10MICROPAK
Packaging: Cut Tape (CT)
Fault Protection: Over Voltage
Supplier Device Package: 10-MicroPak™
Operating Temperature: -40°C ~ 85°C (TA)
Interface: USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 10-UFQFN Exposed Pad
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 13+ | 1.39 EUR |
| 15+ | 1.24 EUR |
| 25+ | 1.18 EUR |
| 100+ | 0.91 EUR |
| 250+ | 0.8 EUR |
| 500+ | 0.76 EUR |
| 1000+ | 0.59 EUR |
| 2500+ | 0.56 EUR |
| FSA832L10X |
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Hersteller: onsemi
Description: IC BATT MFUNC 10MICROPAK
Description: IC BATT MFUNC 10MICROPAK
auf Bestellung 648 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 11+ | 1.62 EUR |
| 13+ | 1.42 EUR |
| 25+ | 1.34 EUR |
| 100+ | 1.09 EUR |
| 250+ | 1.01 EUR |
| 500+ | 0.86 EUR |
| FSA880UMX_F106 |
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Hersteller: onsemi
Description: IC BATT MFUNC 16UMLP
Part Status: Obsolete
Fault Protection: Over Voltage
Supplier Device Package: 16-UMLP (1.8x2.6)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I²C, USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Description: IC BATT MFUNC 16UMLP
Part Status: Obsolete
Fault Protection: Over Voltage
Supplier Device Package: 16-UMLP (1.8x2.6)
Operating Temperature: -40°C ~ 85°C (TA)
Interface: I²C, USB
Function: Multi-Function Controller
Mounting Type: Surface Mount
Package / Case: 16-UFQFN
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH


























