FDMC86139P onsemi
Hersteller: onsemi
Description: MOSFET P-CH 100V 4.4A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 50 V
Description: MOSFET P-CH 100V 4.4A/15A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc)
Rds On (Max) @ Id, Vgs: 67mOhm @ 4.4A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 50 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl | Preis ohne MwSt |
---|---|
3000+ | 1.27 EUR |
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Technische Details FDMC86139P onsemi
Description: MOSFET P-CH 100V 4.4A/15A 8MLP, Packaging: Tape & Reel (TR), Package / Case: 8-PowerWDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc), Rds On (Max) @ Id, Vgs: 67mOhm @ 4.4A, 10V, Power Dissipation (Max): 2.3W (Ta), 40W (Tc), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: 8-MLP (3.3x3.3), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±25V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 50 V.
Weitere Produktangebote FDMC86139P nach Preis ab 1.68 EUR bis 4.34 EUR
Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt | ||||||||||||||
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FDMC86139P | Hersteller : onsemi |
Description: MOSFET P-CH 100V 4.4A/15A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta), 15A (Tc) Rds On (Max) @ Id, Vgs: 67mOhm @ 4.4A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1335 pF @ 50 V |
auf Bestellung 7054 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86139P | Hersteller : onsemi / Fairchild | MOSFET PT5 100V/25V Pch Power Trench Mosfet |
auf Bestellung 56056 Stücke: Lieferzeit 486-500 Tag (e) |
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FDMC86139P Produktcode: 183309 |
IC > IC andere |
Produkt ist nicht verfügbar
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FDMC86139P | Hersteller : ON Semiconductor | Trans MOSFET P-CH 100V 4.4A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86139P | Hersteller : ON Semiconductor | Trans MOSFET P-CH 100V 4.4A 8-Pin WDFN EP T/R |
Produkt ist nicht verfügbar |
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FDMC86139P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Kind of package: reel; tape Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.104Ω Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 Anzahl je Verpackung: 1 Stücke |
Produkt ist nicht verfügbar |
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FDMC86139P | Hersteller : ONSEMI |
Category: SMD P channel transistors Description: Transistor: P-MOSFET; unipolar; -100V; -15A; 40W; WDFN8 Kind of package: reel; tape Drain-source voltage: -100V Drain current: -15A On-state resistance: 0.104Ω Type of transistor: P-MOSFET Power dissipation: 40W Polarisation: unipolar Kind of channel: enhanced Gate-source voltage: ±25V Mounting: SMD Case: WDFN8 |
Produkt ist nicht verfügbar |