| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||||
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FDMS3606AS | onsemi |
 Description: MOSFET 2N-CH 30V 13A/27A POWER56Current - Continuous Drain (Id) @ 25°C: 13A, 27A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Cut Tape (CT) Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSA2866UMX | onsemi |
Description: IC ANALOG SWITCH 20UMLP Number of Channels: 1 Multiplexer/Demultiplexer Circuit: 2:2 Voltage - Supply, Single (V+): 1.65V ~ 4.3V -3db Bandwidth: 210MHz On-State Resistance (Max): 3.5Ohm Applications: Telecommunications Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 20-UFQFN Exposed Pad Features: Break-Before-Make Packaging: Cut Tape (CT) Supplier Device Package: 20-UMLP (3x3) |
auf Bestellung 31 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3182TSR2V | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 730 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801BR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 260% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 130% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C |
auf Bestellung 1517086 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801AR2 | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Packaging: Cut Tape (CT) Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) |
auf Bestellung 131682 Stücke: Lieferzeit 10-14 Tag (e) |
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FXLP4555MPX | onsemi |
Description: IC XLTR VL BIDIR 16-MLP Packaging: Cut Tape (CT) Features: SIM Card Interface Package / Case: 16-WFQFN Exposed Pad Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Supplier Device Package: 16-MLP (3x3) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 1 Voltage - VCCA: 1.65 V ~ 5.5 V Voltage - VCCB: 1.7 V ~ 3.2 V Number of Circuits: 1 |
auf Bestellung 6619 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3182SD | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) |
auf Bestellung 15436 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD3182SDV | onsemi |
Description: OPTOISO 5KV 1CH GATE DVR 8SMD Mounting Type: Surface Mount Package / Case: 8-SMD, Gull Wing Packaging: Cut Tape (CT) Voltage - Output Supply: 10V ~ 30V Current - DC Forward (If) (Max): 25 mA Number of Channels: 1 Part Status: Active Pulse Width Distortion (Max): 65ns Propagation Delay tpLH / tpHL (Max): 210ns, 210ns Common Mode Transient Immunity (Min): 35kV/µs Rise / Fall Time (Typ): 38ns, 24ns Supplier Device Package: 8-SMD Approval Agency: UL, VDE Voltage - Isolation: 5000Vrms Current - Output High, Low: 2.5A, 2.5A Technology: Optical Coupling Current - Peak Output: 3A Voltage - Forward (Vf) (Typ): 1.43V Operating Temperature: -40°C ~ 100°C |
auf Bestellung 22195 Stücke: Lieferzeit 10-14 Tag (e) |
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FMBS2383 | onsemi |
Description: TRANS NPN 160V 0.8A SUPERSOT-6 Power - Max: 630 mW Voltage - Collector Emitter Breakdown (Max): 160 V Current - Collector (Ic) (Max): 800 mA Part Status: Obsolete Supplier Device Package: SuperSOT™-6 Frequency - Transition: 120MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA Operating Temperature: 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: SOT-23-6 Thin, TSOT-23-6 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FXLA0104QFX | onsemi |
Description: IC XLTR VL BIDIR 12-UMLP Packaging: Cut Tape (CT) Features: Auto-Direction Sensing, Power-Off Protection Package / Case: 12-UFQFN Output Type: Tri-State, Non-Inverted Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Data Rate: 140Mbps Supplier Device Package: 12-UMLP (1.7x2) Channel Type: Bidirectional Translator Type: Voltage Level Channels per Circuit: 4 Voltage - VCCA: 1.1 V ~ 3.6 V Voltage - VCCB: 1.1 V ~ 3.6 V Number of Circuits: 1 |
auf Bestellung 4495 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN48632UC33X | onsemi |
Description: IC REG CONV GSM PA 1OUT 16WLCSP Supplier Device Package: 16-WLCSP (1.78x1.78) Applications: Converter, GSM PA Operating Temperature: -40°C ~ 85°C Voltage - Input: 2.35V ~ 5.5V Number of Outputs: 1 Mounting Type: Surface Mount Voltage - Output: 3.3V, 3.49V Package / Case: 16-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 2999 Stücke: Lieferzeit 10-14 Tag (e) |
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FSAL200MTCX | onsemi |
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 16-TSSOP (0.173", 4.40mm Width) Packaging: Tape & Reel (TR) Number of Circuits: 4 Current - Leakage (IS(off)) (Max): 100µA Channel Capacitance (CS(off), CD(off)): 13pF Switch Time (Ton, Toff) (Max): 20ns, 10ns Channel-to-Channel Matching (ΔRon): 400mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 30MHz Charge Injection: 7pC Voltage - Supply, Single (V+): 3V ~ 5.5V Supplier Device Package: 16-TSSOP -3db Bandwidth: 137MHz On-State Resistance (Max): 12Ohm |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMD Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
auf Bestellung 390 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
auf Bestellung 157294 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50250AS | onsemi |
Description: MOSFET IPM 500V 1.2A 23-PWRSMD Packaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.2 A Voltage: 500 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 450 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSB50550AS | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD Packaging: Tape & Reel (TR) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
auf Bestellung 157050 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50325AT | onsemi |
Description: MOSFET IPM 250V 1.7A 23-PWRDIP Packaging: Tube Package / Case: 23-PowerDIP Module, Offset Leads Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Current: 1.7 A Voltage: 250 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSB50550A | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD Packaging: Tube Package / Case: 23-PowerDIP Module (0.573", 14.56mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Last Time Buy Current: 2 A Voltage: 500 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FSB50550AT | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD Packaging: Tube Package / Case: 23-PowerDIP Module (0.748", 19.00mm) Mounting Type: Through Hole Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Active Current: 2 A Voltage: 500 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FODM8801AV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Current - DC Forward (If) (Max): 20 mA Number of Channels: 1 Rise / Fall Time (Typ): 5µs, 5.5µs Turn On / Turn Off Time (Typ): 6µs, 6µs Voltage - Output (Max): 75V Supplier Device Package: 4-Mini-Flat Current Transfer Ratio (Max): 160% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Min): 80% @ 1mA Voltage - Isolation: 3750Vrms Current - Output / Channel: 30mA Input Type: DC Voltage - Forward (Vf) (Typ): 1.35V Operating Temperature: -40°C ~ 125°C Mounting Type: Surface Mount Output Type: Transistor Package / Case: 4-SOIC (0.173", 4.40mm Width) Packaging: Tube |
auf Bestellung 961 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801BV | onsemi |
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT Packaging: Tube Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 130% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 260% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 238284 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN7171M-F085 | onsemi |
Description: IC GATE DRVR HIGH-SIDE 8SOIC Qualification: AEC-Q100 Grade: Automotive Gate Type: IGBT, MOSFET (N-Channel) Number of Drivers: 1 Driven Configuration: High-Side Channel Type: Single Rise / Fall Time (Typ): 25ns, 15ns Supplier Device Package: 8-SOIC High Side Voltage - Max (Bootstrap): 600 V Input Type: Non-Inverting Voltage - Supply: 10V ~ 20V Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tube DigiKey Programmable: Not Verified Part Status: Obsolete Current - Peak Output (Source, Sink): 4A, 4A Logic Voltage - VIL, VIH: 0.8V, 2.5V |
auf Bestellung 3265 Stücke: Lieferzeit 10-14 Tag (e) |
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FCPF260N60E-F152 | onsemi |
Description: MOSFET N-CH 600V 15A TO220F Supplier Device Package: TO-220F-3 Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 36W (Tc) Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V Current - Continuous Drain (Id) @ 25°C: 15A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Full Pack Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FDI045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A I2PAK Packaging: Tube Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-262 (I2PAK) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
auf Bestellung 72 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP023N08B-F102 | onsemi |
Description: MOSFET N-CH 75V 120A TO220-3 Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 3.8V @ 250µA Power Dissipation (Max): 245W (Tc) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 1148 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP027N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V Power Dissipation (Max): 246W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V |
auf Bestellung 286 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP030N06B-F102 | onsemi |
Description: MOSFET N-CH 60V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V Power Dissipation (Max): 205W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V |
auf Bestellung 364 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP032N08B-F102 | onsemi |
Description: MOSFET N-CH 80V 120A TO220-3 Part Status: Active Supplier Device Package: TO-220-3 Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 263W (Tc) Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V Current - Continuous Drain (Id) @ 25°C: 120A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-220-3 Packaging: Tube Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V Drain to Source Voltage (Vdss): 80 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V |
auf Bestellung 4868 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP045N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 120A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 120A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V Power Dissipation (Max): 263W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V |
auf Bestellung 952 Stücke: Lieferzeit 10-14 Tag (e) |
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FDP085N10A-F102 | onsemi |
Description: MOSFET N-CH 100V 96A TO220-3 Packaging: Tube Package / Case: TO-220-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 96A (Tc) Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V Power Dissipation (Max): 188W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-220-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH15T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 30A TO-247 Switching Energy: 1.15mJ (on), 460µJ (off) Td (on/off) @ 25°C: 32ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A Reverse Recovery Time (trr): 72 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 333 W Current - Collector Pulsed (Icm): 60 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 30 A Part Status: Obsolete Gate Charge: 128 nC Test Condition: 600V, 15A, 34Ohm, 15V |
Produkt ist nicht verfügbar |
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FGH25T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 50A TO-247 Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube Power - Max: 428 W Current - Collector Pulsed (Icm): 100 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector (Ic) (Max): 50 A Part Status: Active Gate Charge: 225 nC Test Condition: 600V, 25A, 23Ohm, 15V Switching Energy: 1.74mJ (on), 560µJ (off) Td (on/off) @ 25°C: 40ns/490ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A Reverse Recovery Time (trr): 60 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) |
Produkt ist nicht verfügbar |
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FGH30T65UPDT-F155 | onsemi |
Description: IGBT 650V 60A 250W TO247-3 Power - Max: 250 W Current - Collector Pulsed (Icm): 90 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector (Ic) (Max): 60 A Part Status: Obsolete Gate Charge: 155 nC Test Condition: 400V, 30A, 8Ohm, 15V Switching Energy: 760µJ (on), 400µJ (off) Td (on/off) @ 25°C: 22ns/139ns IGBT Type: Trench Field Stop Supplier Device Package: TO-247-3 Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A Reverse Recovery Time (trr): 43 ns Input Type: Standard Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Through Hole Package / Case: TO-247-3 Packaging: Tube |
Produkt ist nicht verfügbar |
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FGH40T120SMD | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
auf Bestellung 7750 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH40T120SMD-F155 | onsemi |
Description: IGBT TRENCH FS 1200V 80A TO-247 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 65 ns Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 40ns/475ns Switching Energy: 2.7mJ (on), 1.1mJ (off) Test Condition: 600V, 40A, 10Ohm, 15V Gate Charge: 370 nC Part Status: Active Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 1200 V Current - Collector Pulsed (Icm): 160 A Power - Max: 555 W |
auf Bestellung 421 Stücke: Lieferzeit 10-14 Tag (e) |
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FOD8160V | onsemi |
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOP Current - Output / Channel: 50 mA Number of Channels: 1 Propagation Delay tpLH / tpHL (Max): 90ns, 80ns Common Mode Transient Immunity (Min): 20kV/µs Rise / Fall Time (Typ): 22ns, 9ns Supplier Device Package: 5-SOP Inputs - Side 1/Side 2: 1/0 Current - DC Forward (If) (Max): 25mA Voltage - Isolation: 5000Vrms Input Type: DC Data Rate: 10Mbps Voltage - Forward (Vf) (Typ): 1.45V Voltage - Supply: 3V ~ 5.5V Operating Temperature: -40°C ~ 100°C Mounting Type: Surface Mount Output Type: Open Collector, Schottky Clamped Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads Packaging: Tube |
auf Bestellung 7900 Stücke: Lieferzeit 10-14 Tag (e) |
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RHRP860-F085 | onsemi |
Description: DIODE STANDARD 600V 8A TO2202 Current - Reverse Leakage @ Vr: 100 µA @ 600 V Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A Voltage - DC Reverse (Vr) (Max): 600 V Part Status: Obsolete Operating Temperature - Junction: -65°C ~ 175°C Supplier Device Package: TO-220-2 Current - Average Rectified (Io): 8A Grade: Automotive Technology: Standard Reverse Recovery Time (trr): 35 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Through Hole Package / Case: TO-220-2 Packaging: Tube Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FAN302HLMY-F117 | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 67% Frequency - Switching: 85kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 5V ~ 25V Supplier Device Package: 8-SOIC Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Obsolete |
Produkt ist nicht verfügbar |
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FAN3224CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
Produkt ist nicht verfügbar |
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FAN3224TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Packaging: Tape & Reel (TR) Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TA) Voltage - Supply: 4.5V ~ 18V Input Type: Non-Inverting Supplier Device Package: 8-SOIC Rise / Fall Time (Typ): 12ns, 9ns Channel Type: Independent Driven Configuration: Low-Side Number of Drivers: 2 Gate Type: MOSFET (N-Channel) Logic Voltage - VIL, VIH: 0.8V, 2V Current - Peak Output (Source, Sink): 5A, 5A Part Status: Active DigiKey Programmable: Not Verified Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN3226TMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Part Status: Active Current - Peak Output (Source, Sink): 3A, 3A Logic Voltage - VIL, VIH: 0.8V, 2V Gate Type: MOSFET (N-Channel) Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Qualification: AEC-Q100 Grade: Automotive DigiKey Programmable: Not Verified Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN3227CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) Gate Type: N-Channel MOSFET Number of Drivers: 2 |
Produkt ist nicht verfügbar |
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FAN3228CMX-F085 | onsemi |
Description: IC GATE DRVR LOW-SIDE 8SOIC Qualification: AEC-Q100 DigiKey Programmable: Not Verified Grade: Automotive Current - Peak Output (Source, Sink): 3A, 3A Gate Type: N-Channel MOSFET Number of Drivers: 2 Driven Configuration: Low-Side Channel Type: Independent Rise / Fall Time (Typ): 12ns, 9ns Supplier Device Package: 8-SOIC Input Type: Inverting, Non-Inverting Voltage - Supply: 4.5V ~ 18V Operating Temperature: -40°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FAN6757MRMX | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 8SOIC Part Status: Obsolete Voltage - Start Up: 17 V Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 8-SOIC Voltage - Supply (Vcc/Vdd): 11V ~ 30V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Frequency - Switching: 65kHz Duty Cycle: 82.5% Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 8-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FAN6921AMLMY | onsemi |
Description: IC OFFLINE SWITCH FLYBACK 16SOIC Part Status: Obsolete Voltage - Start Up: 18 V Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit Supplier Device Package: 16-SOIC Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V Topology: Flyback Output Isolation: Isolated Internal Switch(s): No Operating Temperature: -40°C ~ 105°C (TA) Mounting Type: Surface Mount Package / Case: 16-SOIC (0.154", 3.90mm Width) Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FCD620N60ZF | onsemi |
Description: MOSFET N-CH 600V 7.3A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc) Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V Power Dissipation (Max): 89W (Tc) Vgs(th) (Max) @ Id: 5V @ 250µA Supplier Device Package: TO-252AA Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 600 V Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V |
auf Bestellung 11800 Stücke: Lieferzeit 10-14 Tag (e) |
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FCD900N60Z | onsemi |
Description: MOSFET N-CH 600V 4.5A TO252 Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V Drain to Source Voltage (Vdss): 600 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 3.5V @ 250µA Power Dissipation (Max): 52W (Tc) Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) |
auf Bestellung 10000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDB8132_F085 | onsemi |
Description: MOSFET N-CH 30V 80A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V Power Dissipation (Max): 341W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-263 (D2Pak) Grade: Automotive Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDD120AN15A0-F085 | onsemi |
Description: MOSFET N-CH 150V 14A DPAK Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Grade: Automotive Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V Drain to Source Voltage (Vdss): 150 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-252AA Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 65W (Tc) Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V Current - Continuous Drain (Id) @ 25°C: 14A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FDD1600N10ALZ | onsemi |
Description: MOSFET N-CH 100V 6.8A TO252 Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 155°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V Power Dissipation (Max): 14.9W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: TO-252AA Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
auf Bestellung 17500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC0310AS-F127 | onsemi |
Description: MOSFET N-CH 30V 21A 8MLP Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Supplier Device Package: 8-MLP (3.3x3.3) Vgs(th) (Max) @ Id: 3V @ 1mA Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V Current - Continuous Drain (Id) @ 25°C: 21A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) |
auf Bestellung 30000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMF6824A | onsemi |
Description: IC HALF BRIDGE DRIVER 60A 40PQFN Current - Output / Channel: 60A Applications: Synchronous Buck Converters Rds On (Typ): 1Ohm LS, 1Ohm HS Voltage - Supply: 4.5V ~ 5.5V Output Configuration: Half Bridge Operating Temperature: -40°C ~ 150°C (TJ) Interface: PWM Mounting Type: Surface Mount Package / Case: 40-PowerTFQFN Features: Bootstrap Circuit, Status Flag Packaging: Tape & Reel (TR) Load Type: Inductive Fault Protection: Over Temperature, Shoot-Through, UVLO Supplier Device Package: 40-PQFN (6x6) Voltage - Load: 3V ~ 16V Technology: DrMOS |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS037N08B | onsemi |
Description: MOSFET N-CH 75V 100A 8PQFN Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V Drain to Source Voltage (Vdss): 75 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4.5V @ 250µA Power Dissipation (Max): 830mW (Ta), 104.2W (Tc) Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 100A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS3660AS | onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56 Supplier Device Package: Power56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
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FDMS3660S-F121 | onsemi |
Description: MOSFET 2N-CH 30V 13A/30A POWER56 Vgs(th) (Max) @ Id: 2.7V @ 250µA FET Feature: Logic Level Gate Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V Current - Continuous Drain (Id) @ 25°C: 13A, 30A Drain to Source Voltage (Vdss): 30V Power - Max: 1W Technology: MOSFET (Metal Oxide) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: Power56 |
Produkt ist nicht verfügbar |
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FDMS86202 | onsemi |
Description: MOSFET N-CH 120V 13.5A POWER56 Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Drain to Source Voltage (Vdss): 120 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-PQFN (5x6) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86550 | onsemi |
Description: MOSFET N-CH 60V 32A/155A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 2.7W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDPC4044 | onsemi |
Description: MOSFET 2N-CH POWERCLIP-33 Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 1W Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Powerclip-33 Part Status: Obsolete |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDT1600N10ALZ | onsemi |
Description: MOSFET N-CH 100V 5.6A SOT223-4 Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc) Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V Power Dissipation (Max): 10.42W (Tc) Vgs(th) (Max) @ Id: 2.8V @ 250µA Supplier Device Package: SOT-223-4 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V |
auf Bestellung 20000 Stücke: Lieferzeit 10-14 Tag (e) |
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FGD3040G2-F085 | onsemi |
Description: IGBT 400V 41A TO-252AA Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Logic Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A Supplier Device Package: TO-252AA Td (on/off) @ 25°C: 900ns/4.8µs Test Condition: 300V, 6.5A, 1kOhm, 5V Gate Charge: 21 nC Part Status: Active Current - Collector (Ic) (Max): 41 A Voltage - Collector Emitter Breakdown (Max): 400 V Power - Max: 150 W Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 2500 Stücke Im Einkaufswagen Stück im Wert von UAH |
| FDMS3606AS |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Description: MOSFET 2N-CH 30V 13A/27A POWER56
Current - Continuous Drain (Id) @ 25°C: 13A, 27A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Cut Tape (CT)
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1695pF @ 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSA2866UMX |
Hersteller: onsemi
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
Description: IC ANALOG SWITCH 20UMLP
Number of Channels: 1
Multiplexer/Demultiplexer Circuit: 2:2
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
-3db Bandwidth: 210MHz
On-State Resistance (Max): 3.5Ohm
Applications: Telecommunications
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 20-UFQFN Exposed Pad
Features: Break-Before-Make
Packaging: Cut Tape (CT)
Supplier Device Package: 20-UMLP (3x3)
auf Bestellung 31 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 2.07 EUR |
| 12+ | 1.87 EUR |
| 25+ | 1.77 EUR |
| FOD3182TSR2V |
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Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 730 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 10+ | 4.37 EUR |
| 100+ | 3.42 EUR |
| FODM8801BR2 |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 260% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 130% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
auf Bestellung 1517086 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.83 EUR |
| 11+ | 2.01 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.3 EUR |
| 1000+ | 1.23 EUR |
| FODM8801AR2 |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
auf Bestellung 131682 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.38 EUR |
| 1000+ | 1.31 EUR |
| FXLP4555MPX |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 16-MLP
Packaging: Cut Tape (CT)
Features: SIM Card Interface
Package / Case: 16-WFQFN Exposed Pad
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Supplier Device Package: 16-MLP (3x3)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 1
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.7 V ~ 3.2 V
Number of Circuits: 1
auf Bestellung 6619 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 23+ | 0.92 EUR |
| 33+ | 0.65 EUR |
| 37+ | 0.58 EUR |
| 100+ | 0.5 EUR |
| 250+ | 0.46 EUR |
| 500+ | 0.45 EUR |
| 1000+ | 0.43 EUR |
| FOD3182SD |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
auf Bestellung 15436 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5+ | 5.19 EUR |
| 10+ | 3.77 EUR |
| 100+ | 2.93 EUR |
| 500+ | 2.56 EUR |
| FOD3182SDV |
|
Hersteller: onsemi
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
Description: OPTOISO 5KV 1CH GATE DVR 8SMD
Mounting Type: Surface Mount
Package / Case: 8-SMD, Gull Wing
Packaging: Cut Tape (CT)
Voltage - Output Supply: 10V ~ 30V
Current - DC Forward (If) (Max): 25 mA
Number of Channels: 1
Part Status: Active
Pulse Width Distortion (Max): 65ns
Propagation Delay tpLH / tpHL (Max): 210ns, 210ns
Common Mode Transient Immunity (Min): 35kV/µs
Rise / Fall Time (Typ): 38ns, 24ns
Supplier Device Package: 8-SMD
Approval Agency: UL, VDE
Voltage - Isolation: 5000Vrms
Current - Output High, Low: 2.5A, 2.5A
Technology: Optical Coupling
Current - Peak Output: 3A
Voltage - Forward (Vf) (Typ): 1.43V
Operating Temperature: -40°C ~ 100°C
auf Bestellung 22195 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.97 EUR |
| 10+ | 4.37 EUR |
| 100+ | 3.42 EUR |
| 500+ | 2.99 EUR |
| FMBS2383 |
|
Hersteller: onsemi
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Description: TRANS NPN 160V 0.8A SUPERSOT-6
Power - Max: 630 mW
Voltage - Collector Emitter Breakdown (Max): 160 V
Current - Collector (Ic) (Max): 800 mA
Part Status: Obsolete
Supplier Device Package: SuperSOT™-6
Frequency - Transition: 120MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 100mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 1V @ 50mA, 500mA
Operating Temperature: 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: SOT-23-6 Thin, TSOT-23-6
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FXLA0104QFX |
|
Hersteller: onsemi
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
Description: IC XLTR VL BIDIR 12-UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing, Power-Off Protection
Package / Case: 12-UFQFN
Output Type: Tri-State, Non-Inverted
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 140Mbps
Supplier Device Package: 12-UMLP (1.7x2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.1 V ~ 3.6 V
Voltage - VCCB: 1.1 V ~ 3.6 V
Number of Circuits: 1
auf Bestellung 4495 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 25+ | 0.83 EUR |
| 36+ | 0.58 EUR |
| 40+ | 0.52 EUR |
| 100+ | 0.45 EUR |
| 250+ | 0.42 EUR |
| 500+ | 0.4 EUR |
| 1000+ | 0.39 EUR |
| FAN48632UC33X |
|
Hersteller: onsemi
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC REG CONV GSM PA 1OUT 16WLCSP
Supplier Device Package: 16-WLCSP (1.78x1.78)
Applications: Converter, GSM PA
Operating Temperature: -40°C ~ 85°C
Voltage - Input: 2.35V ~ 5.5V
Number of Outputs: 1
Mounting Type: Surface Mount
Voltage - Output: 3.3V, 3.49V
Package / Case: 16-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 2999 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.42 EUR |
| 10+ | 2.12 EUR |
| 25+ | 1.78 EUR |
| 100+ | 1.39 EUR |
| 250+ | 1.21 EUR |
| 500+ | 1.09 EUR |
| 1000+ | 1 EUR |
| FSAL200MTCX |
Hersteller: onsemi
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
Description: IC SWITCH SPDT X 4 12OHM 16TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-TSSOP (0.173", 4.40mm Width)
Packaging: Tape & Reel (TR)
Number of Circuits: 4
Current - Leakage (IS(off)) (Max): 100µA
Channel Capacitance (CS(off), CD(off)): 13pF
Switch Time (Ton, Toff) (Max): 20ns, 10ns
Channel-to-Channel Matching (ΔRon): 400mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 30MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 3V ~ 5.5V
Supplier Device Package: 16-TSSOP
-3db Bandwidth: 137MHz
On-State Resistance (Max): 12Ohm
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.13 EUR |
| 5000+ | 1.09 EUR |
| FSB50250AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
auf Bestellung 390 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 16.01 EUR |
| 10+ | 10.91 EUR |
| 100+ | 8.1 EUR |
| FSB50550AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
auf Bestellung 157294 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.04 EUR |
| 10+ | 13.1 EUR |
| 100+ | 10.19 EUR |
| FSB50250AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Description: MOSFET IPM 500V 1.2A 23-PWRSMD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.2 A
Voltage: 500 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 450 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550AS |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Tape & Reel (TR)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
auf Bestellung 157050 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 450+ | 8.32 EUR |
| FSB50325AT |
|
Hersteller: onsemi
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
Description: MOSFET IPM 250V 1.7A 23-PWRDIP
Packaging: Tube
Package / Case: 23-PowerDIP Module, Offset Leads
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Current: 1.7 A
Voltage: 250 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550A |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.573", 14.56mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Last Time Buy
Current: 2 A
Voltage: 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FSB50550AT |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRDIP MOD
Packaging: Tube
Package / Case: 23-PowerDIP Module (0.748", 19.00mm)
Mounting Type: Through Hole
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Active
Current: 2 A
Voltage: 500 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FODM8801AV |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Current - DC Forward (If) (Max): 20 mA
Number of Channels: 1
Rise / Fall Time (Typ): 5µs, 5.5µs
Turn On / Turn Off Time (Typ): 6µs, 6µs
Voltage - Output (Max): 75V
Supplier Device Package: 4-Mini-Flat
Current Transfer Ratio (Max): 160% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Min): 80% @ 1mA
Voltage - Isolation: 3750Vrms
Current - Output / Channel: 30mA
Input Type: DC
Voltage - Forward (Vf) (Typ): 1.35V
Operating Temperature: -40°C ~ 125°C
Mounting Type: Surface Mount
Output Type: Transistor
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Packaging: Tube
auf Bestellung 961 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3 EUR |
| 10+ | 2.13 EUR |
| 100+ | 1.62 EUR |
| 500+ | 1.38 EUR |
| FODM8801BV |
|
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 130% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 260% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 238284 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8+ | 2.84 EUR |
| 11+ | 2.03 EUR |
| 150+ | 1.46 EUR |
| 600+ | 1.3 EUR |
| 1050+ | 1.24 EUR |
| 2100+ | 1.18 EUR |
| 5100+ | 1.11 EUR |
| 10050+ | 1.07 EUR |
| FAN7171M-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Description: IC GATE DRVR HIGH-SIDE 8SOIC
Qualification: AEC-Q100
Grade: Automotive
Gate Type: IGBT, MOSFET (N-Channel)
Number of Drivers: 1
Driven Configuration: High-Side
Channel Type: Single
Rise / Fall Time (Typ): 25ns, 15ns
Supplier Device Package: 8-SOIC
High Side Voltage - Max (Bootstrap): 600 V
Input Type: Non-Inverting
Voltage - Supply: 10V ~ 20V
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tube
DigiKey Programmable: Not Verified
Part Status: Obsolete
Current - Peak Output (Source, Sink): 4A, 4A
Logic Voltage - VIL, VIH: 0.8V, 2.5V
auf Bestellung 3265 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.01 EUR |
| 10+ | 4.5 EUR |
| 95+ | 3.72 EUR |
| 190+ | 3.56 EUR |
| 285+ | 3.49 EUR |
| 570+ | 3.37 EUR |
| 1045+ | 3.28 EUR |
| 2565+ | 3.19 EUR |
| FCPF260N60E-F152 |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
Description: MOSFET N-CH 600V 15A TO220F
Supplier Device Package: TO-220F-3
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 36W (Tc)
Rds On (Max) @ Id, Vgs: 260mOhm @ 7.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 15A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3 Full Pack
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 2500 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDI045N10A-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A I2PAK
Packaging: Tube
Package / Case: TO-262-3 Long Leads, I2PAK, TO-262AA
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-262 (I2PAK)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 72 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.09 EUR |
| 50+ | 5.3 EUR |
| FDP023N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 120A TO220-3
Input Capacitance (Ciss) (Max) @ Vds: 13765 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 195 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 3.8V @ 250µA
Power Dissipation (Max): 245W (Tc)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Rds On (Max) @ Id, Vgs: 2.35mOhm @ 75A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 1148 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 8.98 EUR |
| 10+ | 5.97 EUR |
| 50+ | 4.68 EUR |
| 100+ | 4.26 EUR |
| 500+ | 3.53 EUR |
| FDP027N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
Description: MOSFET N-CH 80V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 2.7mOhm @ 100A, 10V
Power Dissipation (Max): 246W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 178 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13530 pF @ 40 V
auf Bestellung 286 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.79 EUR |
| 10+ | 5.14 EUR |
| 50+ | 4.01 EUR |
| 100+ | 3.64 EUR |
| FDP030N06B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
Description: MOSFET N-CH 60V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.1mOhm @ 100A, 10V
Power Dissipation (Max): 205W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 99 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 30 V
auf Bestellung 364 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.89 EUR |
| 50+ | 2.95 EUR |
| 100+ | 2.67 EUR |
| FDP032N08B-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Description: MOSFET N-CH 80V 120A TO220-3
Part Status: Active
Supplier Device Package: TO-220-3
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 263W (Tc)
Rds On (Max) @ Id, Vgs: 3.3mOhm @ 100A, 10V
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-220-3
Packaging: Tube
Input Capacitance (Ciss) (Max) @ Vds: 10965 pF @ 40 V
Gate Charge (Qg) (Max) @ Vgs: 144 nC @ 10 V
Drain to Source Voltage (Vdss): 80 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
auf Bestellung 4868 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 7.1 EUR |
| 50+ | 3.61 EUR |
| 100+ | 3.27 EUR |
| 500+ | 2.68 EUR |
| 1000+ | 2.49 EUR |
| 2000+ | 2.38 EUR |
| FDP045N10A-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
Description: MOSFET N-CH 100V 120A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 100A, 10V
Power Dissipation (Max): 263W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 74 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5270 pF @ 50 V
auf Bestellung 952 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 9.45 EUR |
| 10+ | 6.28 EUR |
| 50+ | 4.93 EUR |
| 100+ | 4.5 EUR |
| 500+ | 3.74 EUR |
| FDP085N10A-F102 |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
Description: MOSFET N-CH 100V 96A TO220-3
Packaging: Tube
Package / Case: TO-220-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 96A (Tc)
Rds On (Max) @ Id, Vgs: 8.5mOhm @ 96A, 10V
Power Dissipation (Max): 188W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-220-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 40 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2695 pF @ 50 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.45 EUR |
| 50+ | 3.25 EUR |
| 100+ | 2.94 EUR |
| 500+ | 2.39 EUR |
| FGH15T120SMD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
Description: IGBT TRENCH FS 1200V 30A TO-247
Switching Energy: 1.15mJ (on), 460µJ (off)
Td (on/off) @ 25°C: 32ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 15A
Reverse Recovery Time (trr): 72 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 333 W
Current - Collector Pulsed (Icm): 60 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 30 A
Part Status: Obsolete
Gate Charge: 128 nC
Test Condition: 600V, 15A, 34Ohm, 15V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH25T120SMD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Description: IGBT TRENCH FS 1200V 50A TO-247
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Power - Max: 428 W
Current - Collector Pulsed (Icm): 100 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector (Ic) (Max): 50 A
Part Status: Active
Gate Charge: 225 nC
Test Condition: 600V, 25A, 23Ohm, 15V
Switching Energy: 1.74mJ (on), 560µJ (off)
Td (on/off) @ 25°C: 40ns/490ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 25A
Reverse Recovery Time (trr): 60 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH30T65UPDT-F155 |
|
Hersteller: onsemi
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Description: IGBT 650V 60A 250W TO247-3
Power - Max: 250 W
Current - Collector Pulsed (Icm): 90 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector (Ic) (Max): 60 A
Part Status: Obsolete
Gate Charge: 155 nC
Test Condition: 400V, 30A, 8Ohm, 15V
Switching Energy: 760µJ (on), 400µJ (off)
Td (on/off) @ 25°C: 22ns/139ns
IGBT Type: Trench Field Stop
Supplier Device Package: TO-247-3
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 30A
Reverse Recovery Time (trr): 43 ns
Input Type: Standard
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Through Hole
Package / Case: TO-247-3
Packaging: Tube
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FGH40T120SMD |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
auf Bestellung 7750 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.28 EUR |
| 30+ | 10.82 EUR |
| 120+ | 9.17 EUR |
| 510+ | 8.41 EUR |
| FGH40T120SMD-F155 |
|
Hersteller: onsemi
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
Description: IGBT TRENCH FS 1200V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 65 ns
Vce(on) (Max) @ Vge, Ic: 2.4V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 40ns/475ns
Switching Energy: 2.7mJ (on), 1.1mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 370 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1200 V
Current - Collector Pulsed (Icm): 160 A
Power - Max: 555 W
auf Bestellung 421 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 18.35 EUR |
| 30+ | 10.84 EUR |
| 120+ | 9.2 EUR |
| FOD8160V |
|
Hersteller: onsemi
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tube
Description: OPTOISO 5KV OPEN COLLECTOR 5-SOP
Current - Output / Channel: 50 mA
Number of Channels: 1
Propagation Delay tpLH / tpHL (Max): 90ns, 80ns
Common Mode Transient Immunity (Min): 20kV/µs
Rise / Fall Time (Typ): 22ns, 9ns
Supplier Device Package: 5-SOP
Inputs - Side 1/Side 2: 1/0
Current - DC Forward (If) (Max): 25mA
Voltage - Isolation: 5000Vrms
Input Type: DC
Data Rate: 10Mbps
Voltage - Forward (Vf) (Typ): 1.45V
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -40°C ~ 100°C
Mounting Type: Surface Mount
Output Type: Open Collector, Schottky Clamped
Package / Case: 6-SOIC (0.362", 9.20mm Width), 5 Leads
Packaging: Tube
auf Bestellung 7900 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 6.59 EUR |
| 10+ | 4.87 EUR |
| 100+ | 3.84 EUR |
| 500+ | 3.4 EUR |
| RHRP860-F085 |
|
Hersteller: onsemi
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Description: DIODE STANDARD 600V 8A TO2202
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 8 A
Voltage - DC Reverse (Vr) (Max): 600 V
Part Status: Obsolete
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: TO-220-2
Current - Average Rectified (Io): 8A
Grade: Automotive
Technology: Standard
Reverse Recovery Time (trr): 35 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Through Hole
Package / Case: TO-220-2
Packaging: Tube
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN302HLMY-F117 |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 67%
Frequency - Switching: 85kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 5V ~ 25V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3224CMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3224TMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
Description: IC GATE DRVR LOW-SIDE 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TA)
Voltage - Supply: 4.5V ~ 18V
Input Type: Non-Inverting
Supplier Device Package: 8-SOIC
Rise / Fall Time (Typ): 12ns, 9ns
Channel Type: Independent
Driven Configuration: Low-Side
Number of Drivers: 2
Gate Type: MOSFET (N-Channel)
Logic Voltage - VIL, VIH: 0.8V, 2V
Current - Peak Output (Source, Sink): 5A, 5A
Part Status: Active
DigiKey Programmable: Not Verified
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.65 EUR |
| 5000+ | 1.62 EUR |
| FAN3226TMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Part Status: Active
Current - Peak Output (Source, Sink): 3A, 3A
Logic Voltage - VIL, VIH: 0.8V, 2V
Gate Type: MOSFET (N-Channel)
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Qualification: AEC-Q100
Grade: Automotive
DigiKey Programmable: Not Verified
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FAN3227CMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN3228CMX-F085 |
|
Hersteller: onsemi
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC GATE DRVR LOW-SIDE 8SOIC
Qualification: AEC-Q100
DigiKey Programmable: Not Verified
Grade: Automotive
Current - Peak Output (Source, Sink): 3A, 3A
Gate Type: N-Channel MOSFET
Number of Drivers: 2
Driven Configuration: Low-Side
Channel Type: Independent
Rise / Fall Time (Typ): 12ns, 9ns
Supplier Device Package: 8-SOIC
Input Type: Inverting, Non-Inverting
Voltage - Supply: 4.5V ~ 18V
Operating Temperature: -40°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN6757MRMX |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 11V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Part Status: Obsolete
Voltage - Start Up: 17 V
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 11V ~ 30V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Frequency - Switching: 65kHz
Duty Cycle: 82.5%
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FAN6921AMLMY |
|
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 16SOIC
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Description: IC OFFLINE SWITCH FLYBACK 16SOIC
Part Status: Obsolete
Voltage - Start Up: 18 V
Fault Protection: Current Limiting, Open Loop, Over Load, Over Power, Over Temperature, Over Voltage, Short Circuit
Supplier Device Package: 16-SOIC
Voltage - Supply (Vcc/Vdd): 7.5V ~ 25V
Topology: Flyback
Output Isolation: Isolated
Internal Switch(s): No
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FCD620N60ZF |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
Description: MOSFET N-CH 600V 7.3A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7.3A (Tc)
Rds On (Max) @ Id, Vgs: 620mOhm @ 3.6A, 10V
Power Dissipation (Max): 89W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 600 V
Gate Charge (Qg) (Max) @ Vgs: 36 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1135 pF @ 25 V
auf Bestellung 11800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.58 EUR |
| FCD900N60Z |
|
Hersteller: onsemi
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 600V 4.5A TO252
Input Capacitance (Ciss) (Max) @ Vds: 720 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 17 nC @ 10 V
Drain to Source Voltage (Vdss): 600 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 52W (Tc)
Rds On (Max) @ Id, Vgs: 900mOhm @ 2.3A, 10V
Current - Continuous Drain (Id) @ 25°C: 4.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
auf Bestellung 10000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 1.27 EUR |
| 5000+ | 1.23 EUR |
| FDB8132_F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V
Qualification: AEC-Q101
Description: MOSFET N-CH 30V 80A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 1.6mOhm @ 80A, 10V
Power Dissipation (Max): 341W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 350 nC @ 13 V
Input Capacitance (Ciss) (Max) @ Vds: 14100 pF @ 15 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDD120AN15A0-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 14A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
Description: MOSFET N-CH 150V 14A DPAK
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 743 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 10 V
Drain to Source Voltage (Vdss): 150 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-252AA
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 65W (Tc)
Rds On (Max) @ Id, Vgs: 120mOhm @ 4A, 10V
Current - Continuous Drain (Id) @ 25°C: 14A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Qualification: AEC-Q101
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| FDD1600N10ALZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 6.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 6.8A TO252
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 155°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.8A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 3.4A, 10V
Power Dissipation (Max): 14.9W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.61 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
auf Bestellung 17500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.77 EUR |
| 5000+ | 0.71 EUR |
| FDMC0310AS-F127 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 21A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 21A 8MLP
Input Capacitance (Ciss) (Max) @ Vds: 3165 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 52 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Supplier Device Package: 8-MLP (3.3x3.3)
Vgs(th) (Max) @ Id: 3V @ 1mA
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 21A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
auf Bestellung 30000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.64 EUR |
| FDMF6824A |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
Description: IC HALF BRIDGE DRIVER 60A 40PQFN
Current - Output / Channel: 60A
Applications: Synchronous Buck Converters
Rds On (Typ): 1Ohm LS, 1Ohm HS
Voltage - Supply: 4.5V ~ 5.5V
Output Configuration: Half Bridge
Operating Temperature: -40°C ~ 150°C (TJ)
Interface: PWM
Mounting Type: Surface Mount
Package / Case: 40-PowerTFQFN
Features: Bootstrap Circuit, Status Flag
Packaging: Tape & Reel (TR)
Load Type: Inductive
Fault Protection: Over Temperature, Shoot-Through, UVLO
Supplier Device Package: 40-PQFN (6x6)
Voltage - Load: 3V ~ 16V
Technology: DrMOS
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.92 EUR |
| FDMS037N08B |
|
Hersteller: onsemi
Description: MOSFET N-CH 75V 100A 8PQFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 75V 100A 8PQFN
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 5915 pF @ 37.5 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 75 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Power Dissipation (Max): 830mW (Ta), 104.2W (Tc)
Rds On (Max) @ Id, Vgs: 3.7mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 100A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 2.18 EUR |
| FDMS3660AS |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Supplier Device Package: Power56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 30nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 2230pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS3660S-F121 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
Description: MOSFET 2N-CH 30V 13A/30A POWER56
Vgs(th) (Max) @ Id: 2.7V @ 250µA
FET Feature: Logic Level Gate
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1765pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 13A, 30A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1W
Technology: MOSFET (Metal Oxide)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: Power56
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86202 |
|
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 120V 13.5A POWER56
Input Capacitance (Ciss) (Max) @ Vds: 4250 pF @ 60 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Drain to Source Voltage (Vdss): 120 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-PQFN (5x6)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86550 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
Description: MOSFET N-CH 60V 32A/155A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 155A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 2.7W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 11530 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 5.85 EUR |
| FDPC4044 |
|
Hersteller: onsemi
Description: MOSFET 2N-CH POWERCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Obsolete
Description: MOSFET 2N-CH POWERCLIP-33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Input Capacitance (Ciss) (Max) @ Vds: 3215pF @ 15V
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs: 49nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Powerclip-33
Part Status: Obsolete
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDT1600N10ALZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
Description: MOSFET N-CH 100V 5.6A SOT223-4
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.6A (Tc)
Rds On (Max) @ Id, Vgs: 160mOhm @ 2.8A, 10V
Power Dissipation (Max): 10.42W (Tc)
Vgs(th) (Max) @ Id: 2.8V @ 250µA
Supplier Device Package: SOT-223-4
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3.77 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 225 pF @ 50 V
auf Bestellung 20000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4000+ | 0.56 EUR |
| 8000+ | 0.52 EUR |
| FGD3040G2-F085 |
|
Hersteller: onsemi
Description: IGBT 400V 41A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Description: IGBT 400V 41A TO-252AA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Logic
Vce(on) (Max) @ Vge, Ic: 1.25V @ 4V, 6A
Supplier Device Package: TO-252AA
Td (on/off) @ 25°C: 900ns/4.8µs
Test Condition: 300V, 6.5A, 1kOhm, 5V
Gate Charge: 21 nC
Part Status: Active
Current - Collector (Ic) (Max): 41 A
Voltage - Collector Emitter Breakdown (Max): 400 V
Power - Max: 150 W
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 2500 Stücke
Im Einkaufswagen
Stück im Wert von UAH