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FDN537N

FDN537N onsemi

fdn537n-d.pdf
Hersteller: onsemi
Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 60000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.41 EUR
6000+0.39 EUR
9000+0.38 EUR
15000+0.37 EUR
Mindestbestellmenge: 3000
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Technische Details FDN537N onsemi

Description: MOSFET N-CH 30V 6.5A SUPERSOT3, Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V, Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V, Drain to Source Voltage (Vdss): 30 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Part Status: Active, Supplier Device Package: SOT-23-3, Vgs(th) (Max) @ Id: 3V @ 250µA, Power Dissipation (Max): 1.5W (Ta), Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V, Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).

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FDN537N FDN537N Hersteller : onsemi / Fairchild FDN537N_D-2312625.pdf MOSFET 30V Single N-Ch PowerTrench MOSFET
auf Bestellung 63000 Stücke:
Lieferzeit 410-414 Tag (e)
Anzahl Preis
3+1.08 EUR
10+0.96 EUR
100+0.73 EUR
500+0.58 EUR
1000+0.46 EUR
3000+0.42 EUR
6000+0.4 EUR
Mindestbestellmenge: 3
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FDN537N FDN537N Hersteller : onsemi fdn537n-d.pdf Description: MOSFET N-CH 30V 6.5A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 465 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 8.4 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 23mOhm @ 6.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 6.5A (Ta), 6.5A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 60133 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.65 EUR
17+1.04 EUR
100+0.69 EUR
500+0.54 EUR
1000+0.49 EUR
Mindestbestellmenge: 11
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FDN537N Hersteller : ON Semiconductor fdn537n-d.pdf
auf Bestellung 1535 Stücke:
Lieferzeit 21-28 Tag (e)
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