FDN8601 onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta)
Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V
| Anzahl | Preis |
|---|---|
| 3000+ | 0.62 EUR |
| 6000+ | 0.6 EUR |
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Technische Details FDN8601 onsemi
Description: MOSFET N-CH 100V 2.7A SUPERSOT3, Packaging: Tape & Reel (TR), Package / Case: TO-236-3, SC-59, SOT-23-3, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta), Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V, Power Dissipation (Max): 1.5W (Ta), Vgs(th) (Max) @ Id: 4V @ 250µA, Supplier Device Package: SOT-23-3, Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 6V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 100 V, Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V.
Weitere Produktangebote FDN8601 nach Preis ab 0.28 EUR bis 1.11 EUR
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FDN8601 | Hersteller : onsemi / Fairchild |
MOSFETs 100V N-Channel PowerTrench MOSFET |
auf Bestellung 23773 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN8601 | Hersteller : onsemi |
Description: MOSFET N-CH 100V 2.7A SUPERSOT3 Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 5 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 109mOhm @ 1.5A, 10V Current - Continuous Drain (Id) @ 25°C: 2.7A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 21597 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDN8601 | Hersteller : ONN |
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auf Bestellung 9000 Stücke: Lieferzeit 21-28 Tag (e) |