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NLSX4373MUTAG NLSX4373MUTAG onsemi nlsx4373-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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NS5B1G385DTT1G NS5B1G385DTT1G onsemi ns5b1g385-d.pdf Description: IC SWITCH SPST-NOX1 15OHM 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 5-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 2ns
Channel Capacitance (CS(off), CD(off)): 4.1pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
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NSI45025T1G NSI45025T1G onsemi nsi45025-d.pdf Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
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NSI45030T1G NSI45030T1G onsemi nsi45030-d.pdf Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
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NSR0170P2T5G NSR0170P2T5G onsemi nsr0170-d.pdf Description: DIODE SCHOTTKY 70V 70MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
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NSR01F30NXT5G NSR01F30NXT5G onsemi nsr01f30-d.pdf Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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NSR01L30NXT5G NSR01L30NXT5G onsemi nsr01l30-d.pdf Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
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NSR0340P2T5G NSR0340P2T5G onsemi nsr0340p2-d.pdf Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
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NSS12200LT1G NSS12200LT1G onsemi nss12200l-d.pdf Description: TRANS PNP 12V 2A SOT23-3
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NSS1C201LT1G NSS1C201LT1G onsemi nss1c201l-d.pdf Description: TRANS NPN 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
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NSS20101JT1G NSS20101JT1G onsemi nss20101j-d.pdf Description: TRANS NPN 20V 1A SC-89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: SC-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
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NSS20500UW3T2G NSS20500UW3T2G onsemi nss20500uw3-d.pdf Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
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NSS40200LT1G NSS40200LT1G onsemi nss40200l-d.pdf Description: TRANS PNP 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
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NSS40300MZ4T1G NSS40300MZ4T1G onsemi nss40300mz4-d.pdf Description: TRANS PNP 40V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
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NST3906F3T5G NST3906F3T5G onsemi nst3906f3-d.pdf Description: TRANS PNP 40V 0.2A SOT-1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 290 mW
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NST45010MW6T1G NST45010MW6T1G onsemi nst45010mw6-d.pdf Description: TRANS 2PNP 45V 100MA SC-88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
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NTGS3136PT1G NTGS3136PT1G onsemi ntgs3136p-d.pdf Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
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NTGS3433T1G NTGS3433T1G onsemi ntgs3433t1-d.pdf Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
Produkt ist nicht verfügbar
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NTHS4166NT1G NTHS4166NT1G onsemi nths4166n-d.pdf Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
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NTLJS2103PTBG NTLJS2103PTBG onsemi ntljs2103p-d.pdf Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
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NTLUS3A40PZTAG NTLUS3A40PZTAG onsemi ntlus3a40pz-d.pdf Description: MOSFET P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
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NTLUS3A90PZTAG NTLUS3A90PZTAG onsemi ntlus3a90pz-d.pdf Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Produkt ist nicht verfügbar
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NTTFS4824NTAG NTTFS4824NTAG onsemi nttfs4824n-d.pdf Description: MOSFET N-CH 30V 8.3A/69A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 46.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2363 pF @ 12 V
auf Bestellung 1181 Stücke:
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16+1.15 EUR
100+0.9 EUR
500+0.76 EUR
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NTTFS5116PLTAG NTTFS5116PLTAG onsemi nttfs5116pl-d.pdf Description: MOSFET P-CH 60V 5.7A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
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NTTFS5826NLTAG NTTFS5826NLTAG onsemi nttfs5826nl-d.pdf Description: MOSFET N-CH 60V 8A 8WDFN
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NTUD3169CZT5G NTUD3169CZT5G onsemi ntud3169cz-d.pdf Description: MOSFET N/P-CH 20V 0.22A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
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NUP2114UCMR6T1G NUP2114UCMR6T1G onsemi nup2114-d.pdf Description: TVS DIODE 5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Part Status: Active
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NUP2114UPXV5T1G NUP2114UPXV5T1G onsemi nup2114-d.pdf Description: TVS DIODE 5VWM 10VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-553
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
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NUP4114HMR6T1G NUP4114HMR6T1G onsemi nup4114-d.pdf Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
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NVTR4503NT1G NVTR4503NT1G onsemi ntr4503n-d.pdf Description: MOSFET N-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
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NZ9F2V4ST5G NZ9F2V4ST5G onsemi nz9f2v4s-d.pdf Description: DIODE ZENER 2.53V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.53 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 25445 Stücke:
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NZQA6V8AXV5T1G NZQA6V8AXV5T1G onsemi nzqa5v6axv5-d.pdf Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 27942 Stücke:
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PACDN004SR PACDN004SR onsemi PACDN004.pdf Description: TVS DIODE 5.5VWM SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143-4
Unidirectional Channels: 2
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PACDN042Y3R PACDN042Y3R onsemi pacdn042-d.pdf Description: TVS DIODE 5.5VWM 8VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 88210 Stücke:
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500+0.16 EUR
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SMUN2211T1G SMUN2211T1G onsemi dtc114e-d.pdf Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 11475 Stücke:
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56+0.32 EUR
89+0.2 EUR
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500+0.09 EUR
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SMUN5111DW1T1G SMUN5111DW1T1G onsemi dta114ed-d.pdf Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
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66+0.27 EUR
106+0.17 EUR
500+0.12 EUR
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SMUN5311DW1T1G SMUN5311DW1T1G onsemi dtc114ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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500+0.12 EUR
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SZMMBZ27VALT1G SZMMBZ27VALT1G onsemi mmbz5v6alt1-d.pdf Description: DIODE ZENER ARRAY 27V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 27 V
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 4592 Stücke:
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SZMMBZ27VCLT1G SZMMBZ27VCLT1G onsemi mmbz15vdlt1-d.pdf Description: TVS DIODE 22VWM 38VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35842 Stücke:
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205+0.086 EUR
263+0.067 EUR
500+0.065 EUR
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SZMMBZ5V6ALT1G SZMMBZ5V6ALT1G onsemi mmbz5v6alt1-d.pdf Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 5987 Stücke:
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SZNUP2105LT1G SZNUP2105LT1G onsemi nup2105l-d.pdf Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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FDB060AN08A0 FDB060AN08A0 onsemi fdp060an08a0-d.pdf Description: MOSFET N-CH 75V 16A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
auf Bestellung 2841 Stücke:
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HUF76439S3ST HUF76439S3ST onsemi huf76439s3s-d.pdf Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V
auf Bestellung 3171 Stücke:
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FIN1019MTCX FIN1019MTCX onsemi FIN1019.pdf Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
auf Bestellung 4917 Stücke:
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10+2.93 EUR
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250+1.83 EUR
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FSUSB11MTCX FSUSB11MTCX onsemi fsusb11-d.pdf Description: IC USB SWITCH DUAL 1X1 14TSSOP
Packaging: Cut Tape (CT)
Features: Break-Before-Make, USB 1.1
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Produkt ist nicht verfügbar
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FDD86250 FDD86250 onsemi fdd86250-d.pdf Description: MOSFET N-CH 150V 8A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
auf Bestellung 2176 Stücke:
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5+4.22 EUR
10+2.88 EUR
100+2.07 EUR
500+1.71 EUR
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FDD5N50NZFTM FDD5N50NZFTM onsemi ONSM-S-A0003590038-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 500V 3.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Produkt ist nicht verfügbar
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FDMC8200S FDMC8200S onsemi fdmc8200s-d.pdf Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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LM431SCCMLX LM431SCCMLX onsemi lm431sa-d.pdf Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 3679 Stücke:
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NC7SV32L6X NC7SV32L6X onsemi nc7sv32-d.pdf Description: IC GATE OR 1CH 2-INP 6MICROPAK
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GF1G GF1G onsemi ONSM-S-A0003589161-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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FDB035N10A FDB035N10A onsemi fdb035n10a-d.pdf Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
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RURD460S9A RURD460S9A onsemi rurd460s-d.pdf Description: DIODE GEN PURP 600V 4A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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74LCX541BQX 74LCX541BQX onsemi Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FDMC86102LZ FDMC86102LZ onsemi fdmc86102lz-d.pdf Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 41361 Stücke:
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EGP20G EGP20G onsemi egp20k-d.pdf Description: DIODE STANDARD 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
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SS18 SS18 onsemi ss19-d.pdf Description: DIODE SCHOTTKY 80V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
auf Bestellung 32544 Stücke:
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74LVT16374MTDX 74LVT16374MTDX onsemi 74lvt16374-d.pdf Description: IC FF D-TYPE DUAL 8BIT 48TSSOP
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FDMC8622 FDMC8622 onsemi fdmc8622-d.pdf Description: MOSFET N-CH 100V 4A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
auf Bestellung 20076 Stücke:
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KA79M12RTF KA79M12RTF onsemi KA79Mxx%2CLM79M05.pdf Description: IC REG LINEAR -12V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): -12V
Part Status: Obsolete
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.1V @ 500mA
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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NLSX4373MUTAG nlsx4373-d.pdf
NLSX4373MUTAG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFDFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 20Mbps
Supplier Device Package: 8-UDFN (1.8x1.2)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.5 V ~ 5.5 V
Voltage - VCCB: 1.5 V ~ 5.5 V
Number of Circuits: 1
Produkt ist nicht verfügbar
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NS5B1G385DTT1G ns5b1g385-d.pdf
NS5B1G385DTT1G
Hersteller: onsemi
Description: IC SWITCH SPST-NOX1 15OHM 5TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
On-State Resistance (Max): 15Ohm
-3db Bandwidth: 330MHz
Supplier Device Package: 5-TSOP
Voltage - Supply, Single (V+): 2V ~ 5.5V
Switch Circuit: SPST - NO
Multiplexer/Demultiplexer Circuit: 1:1
Switch Time (Ton, Toff) (Max): 6ns, 2ns
Channel Capacitance (CS(off), CD(off)): 4.1pF
Current - Leakage (IS(off)) (Max): 100nA
Number of Circuits: 1
auf Bestellung 9936 Stücke:
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26+0.69 EUR
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NSI45025T1G nsi45025-d.pdf
NSI45025T1G
Hersteller: onsemi
Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 25mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
auf Bestellung 30730 Stücke:
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46+0.39 EUR
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NSI45030T1G nsi45030-d.pdf
NSI45030T1G
Hersteller: onsemi
Description: IC CURRENT REGULATOR 15% SOD123
Packaging: Cut Tape (CT)
Package / Case: SOD-123
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 45V
Current - Output: 30mA
Accuracy: ±15%
Operating Temperature: -55°C ~ 150°C
Supplier Device Package: SOD-123
Part Status: Active
Produkt ist nicht verfügbar
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NSR0170P2T5G nsr0170-d.pdf
NSR0170P2T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
auf Bestellung 47578 Stücke:
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40+0.44 EUR
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NSR01F30NXT5G nsr01f30-d.pdf
NSR01F30NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 125°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 100 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 162237 Stücke:
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39+0.46 EUR
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NSR01L30NXT5G nsr01l30-d.pdf
NSR01L30NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 100MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 100mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
auf Bestellung 45863 Stücke:
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40+0.44 EUR
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NSR0340P2T5G nsr0340p2-d.pdf
NSR0340P2T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 200MA SOD923
Packaging: Cut Tape (CT)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 ns
Technology: Schottky
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 560 mV @ 200 mA
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
auf Bestellung 24487 Stücke:
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Anzahl Preis
63+0.28 EUR
110+0.16 EUR
117+0.15 EUR
500+0.14 EUR
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NSS12200LT1G nss12200l-d.pdf
NSS12200LT1G
Hersteller: onsemi
Description: TRANS PNP 12V 2A SOT23-3
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NSS1C201LT1G nss1c201l-d.pdf
NSS1C201LT1G
Hersteller: onsemi
Description: TRANS NPN 100V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 150mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 120 @ 500mA, 2V
Frequency - Transition: 110MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 490 mW
auf Bestellung 22749 Stücke:
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17+1.04 EUR
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NSS20101JT1G nss20101j-d.pdf
NSS20101JT1G
Hersteller: onsemi
Description: TRANS NPN 20V 1A SC-89-3
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 220mV @ 100mA, 1A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 100mA, 2V
Frequency - Transition: 350MHz
Supplier Device Package: SC-89-3
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 300 mW
auf Bestellung 1006 Stücke:
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35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
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NSS20500UW3T2G nss20500uw3-d.pdf
NSS20500UW3T2G
Hersteller: onsemi
Description: TRANS PNP 20V 5A 3WDFN
Packaging: Cut Tape (CT)
Package / Case: 3-WDFN Exposed Pad
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 260mV @ 400mA, 4A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 3-WDFN (2x2)
Current - Collector (Ic) (Max): 5 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 875 mW
auf Bestellung 3000 Stücke:
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Anzahl Preis
17+1.06 EUR
20+0.9 EUR
100+0.67 EUR
500+0.53 EUR
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NSS40200LT1G nss40200l-d.pdf
NSS40200LT1G
Hersteller: onsemi
Description: TRANS PNP 40V 2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 170mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 500mA, 2V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 2 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 460 mW
auf Bestellung 5795 Stücke:
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Anzahl Preis
23+0.79 EUR
37+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
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NSS40300MZ4T1G nss40300mz4-d.pdf
NSS40300MZ4T1G
Hersteller: onsemi
Description: TRANS PNP 40V 3A SOT223
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 300mA, 3A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 175 @ 1A, 1V
Frequency - Transition: 160MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 3 A
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 2 W
auf Bestellung 7221 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.5 EUR
19+0.93 EUR
100+0.6 EUR
500+0.46 EUR
Mindestbestellmenge: 12
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NST3906F3T5G nst3906f3-d.pdf
NST3906F3T5G
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A SOT-1123
Packaging: Cut Tape (CT)
Package / Case: SOT-1123
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-1123
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 290 mW
auf Bestellung 16261 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
35+0.51 EUR
58+0.31 EUR
100+0.19 EUR
500+0.14 EUR
1000+0.12 EUR
2000+0.11 EUR
Mindestbestellmenge: 35
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NST45010MW6T1G nst45010mw6-d.pdf
NST45010MW6T1G
Hersteller: onsemi
Description: TRANS 2PNP 45V 100MA SC-88/SC70
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP (Dual) Matched Pair
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 380mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 45V
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 220 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
auf Bestellung 16274 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.93 EUR
31+0.57 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
Mindestbestellmenge: 19
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NTGS3136PT1G ntgs3136p-d.pdf
NTGS3136PT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 3.7A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Ta)
Rds On (Max) @ Id, Vgs: 33mOhm @ 5.1A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1901 pF @ 10 V
auf Bestellung 55967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
11+1.71 EUR
12+1.5 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.73 EUR
Mindestbestellmenge: 11
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NTGS3433T1G ntgs3433t1-d.pdf
NTGS3433T1G
Hersteller: onsemi
Description: MOSFET P-CH 12V 2.35A 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.35A (Ta)
Rds On (Max) @ Id, Vgs: 75mOhm @ 3.3A, 4.5V
Power Dissipation (Max): 500mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 250µA
Supplier Device Package: 6-TSOP
Part Status: Last Time Buy
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 550 pF @ 5 V
Produkt ist nicht verfügbar
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NTHS4166NT1G nths4166n-d.pdf
NTHS4166NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 4.9A CHIPFET
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4.9A (Ta)
Rds On (Max) @ Id, Vgs: 22mOhm @ 4.9A, 10V
Power Dissipation (Max): 800mW (Ta)
Vgs(th) (Max) @ Id: 2.3V @ 250µA
Supplier Device Package: ChipFET™
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 18 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 900 pF @ 15 V
auf Bestellung 296 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.78 EUR
15+1.2 EUR
100+0.83 EUR
Mindestbestellmenge: 10
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NTLJS2103PTBG ntljs2103p-d.pdf
NTLJS2103PTBG
Hersteller: onsemi
Description: MOSFET P-CH 12V 3.5A 6WDFN
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 3.5A (Ta)
Rds On (Max) @ Id, Vgs: 40mOhm @ 3A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 800mV @ 250µA
Supplier Device Package: 6-WDFN (2x2)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.2V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 12 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1157 pF @ 6 V
auf Bestellung 370 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
17+1.07 EUR
21+0.87 EUR
100+0.59 EUR
Mindestbestellmenge: 17
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NTLUS3A40PZTAG ntlus3a40pz-d.pdf
NTLUS3A40PZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 4A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-UDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta)
Rds On (Max) @ Id, Vgs: 29mOhm @ 6.4A, 4.5V
Power Dissipation (Max): 700mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (2x2)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2600 pF @ 15 V
auf Bestellung 2394 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.92 EUR
15+1.21 EUR
100+0.8 EUR
500+0.62 EUR
1000+0.57 EUR
Mindestbestellmenge: 10
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NTLUS3A90PZTAG ntlus3a90pz-d.pdf
NTLUS3A90PZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 2.6A 6UDFN
Packaging: Cut Tape (CT)
Package / Case: 6-PowerUFDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 62mOhm @ 4A, 4.5V
Power Dissipation (Max): 600mW (Ta)
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: 6-UDFN (1.6x1.6)
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±8V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 12.3 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 950 pF @ 10 V
Produkt ist nicht verfügbar
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NTTFS4824NTAG nttfs4824n-d.pdf
NTTFS4824NTAG
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.3A/69A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.3A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 20A, 10V
Power Dissipation (Max): 660mW (Ta), 46.3W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 11.5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 11.5 V
Input Capacitance (Ciss) (Max) @ Vds: 2363 pF @ 12 V
auf Bestellung 1181 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.41 EUR
16+1.15 EUR
100+0.9 EUR
500+0.76 EUR
Mindestbestellmenge: 13
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NTTFS5116PLTAG nttfs5116pl-d.pdf
NTTFS5116PLTAG
Hersteller: onsemi
Description: MOSFET P-CH 60V 5.7A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 5.7A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 6A, 10V
Power Dissipation (Max): 3.2W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 30 V
auf Bestellung 3949 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.95 EUR
14+1.31 EUR
100+0.91 EUR
500+0.74 EUR
Mindestbestellmenge: 10
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NTTFS5826NLTAG nttfs5826nl-d.pdf
NTTFS5826NLTAG
Hersteller: onsemi
Description: MOSFET N-CH 60V 8A 8WDFN
Produkt ist nicht verfügbar
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NTUD3169CZT5G ntud3169cz-d.pdf
NTUD3169CZT5G
Hersteller: onsemi
Description: MOSFET N/P-CH 20V 0.22A SOT963
Packaging: Cut Tape (CT)
Package / Case: SOT-963
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 125mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 220mA, 200mA
Input Capacitance (Ciss) (Max) @ Vds: 12.5pF @ 15V
Rds On (Max) @ Id, Vgs: 1.5Ohm @ 100mA, 4.5V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1V @ 250µA
Supplier Device Package: SOT-963
Part Status: Active
auf Bestellung 70185 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.84 EUR
26+0.69 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.26 EUR
2000+0.24 EUR
Mindestbestellmenge: 21
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NUP2114UCMR6T1G nup2114-d.pdf
NUP2114UCMR6T1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
Part Status: Active
auf Bestellung 75264 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
20+0.92 EUR
27+0.67 EUR
100+0.45 EUR
500+0.36 EUR
1000+0.31 EUR
Mindestbestellmenge: 20
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NUP2114UPXV5T1G nup2114-d.pdf
NUP2114UPXV5T1G
Hersteller: onsemi
Description: TVS DIODE 5VWM 10VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.8pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5V (Max)
Supplier Device Package: SOT-553
Unidirectional Channels: 2
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V (Typ)
Power Line Protection: Yes
auf Bestellung 49353 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
50+0.36 EUR
100+0.25 EUR
500+0.22 EUR
1000+0.18 EUR
Mindestbestellmenge: 32
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NUP4114HMR6T1G nup4114-d.pdf
NUP4114HMR6T1G
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 10VC 6TSOP
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Ethernet, HDMI
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 6-TSOP
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 27572 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
55+0.32 EUR
Mindestbestellmenge: 46
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NVTR4503NT1G ntr4503n-d.pdf
NVTR4503NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 1.5A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.5A (Ta)
Rds On (Max) @ Id, Vgs: 110mOhm @ 2.5A, 10V
Power Dissipation (Max): 420mW (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 7 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 135 pF @ 15 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15128 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.65 EUR
44+0.4 EUR
100+0.25 EUR
500+0.19 EUR
1000+0.17 EUR
Mindestbestellmenge: 28
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NZ9F2V4ST5G nz9f2v4s-d.pdf
NZ9F2V4ST5G
Hersteller: onsemi
Description: DIODE ZENER 2.53V 250MW SOD923
Packaging: Cut Tape (CT)
Tolerance: ±4%
Package / Case: SOD-923
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C (TJ)
Voltage - Zener (Nom) (Vz): 2.53 V
Impedance (Max) (Zzt): 100 Ohms
Supplier Device Package: SOD-923
Power - Max: 250 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 µA @ 1 V
auf Bestellung 25445 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
26+0.69 EUR
37+0.48 EUR
100+0.24 EUR
500+0.2 EUR
1000+0.15 EUR
2000+0.12 EUR
Mindestbestellmenge: 26
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NZQA6V8AXV5T1G nzqa5v6axv5-d.pdf
NZQA6V8AXV5T1G
Hersteller: onsemi
Description: TVS DIODE 4.3VWM 13VC SOT553
Packaging: Cut Tape (CT)
Package / Case: SOT-553
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 12pF @ 1MHz
Current - Peak Pulse (10/1000µs): 1.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 4.3V
Supplier Device Package: SOT-553
Unidirectional Channels: 4
Voltage - Breakdown (Min): 6.47V
Voltage - Clamping (Max) @ Ipp: 13V
Power - Peak Pulse: 20W
Power Line Protection: No
Part Status: Active
auf Bestellung 27942 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
38+0.48 EUR
55+0.32 EUR
109+0.16 EUR
500+0.15 EUR
1000+0.14 EUR
Mindestbestellmenge: 38
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PACDN004SR PACDN004.pdf
PACDN004SR
Hersteller: onsemi
Description: TVS DIODE 5.5VWM SOT143-4
Packaging: Cut Tape (CT)
Package / Case: TO-253-4, TO-253AA
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Automotive
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SOT-143-4
Unidirectional Channels: 2
Power Line Protection: No
Part Status: Obsolete
Produkt ist nicht verfügbar
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PACDN042Y3R pacdn042-d.pdf
PACDN042Y3R
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 8VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Reverse Standoff (Typ): 5.5V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 6.2V
Voltage - Clamping (Max) @ Ipp: 8V
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 88210 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
36+0.49 EUR
53+0.34 EUR
107+0.17 EUR
500+0.16 EUR
Mindestbestellmenge: 36
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SMUN2211T1G dtc114e-d.pdf
SMUN2211T1G
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC59
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-59
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 230 mW
Resistor - Base (R1): 10 kOhms
Resistor - Emitter Base (R2): 10 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
auf Bestellung 11475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
56+0.32 EUR
89+0.2 EUR
143+0.12 EUR
500+0.09 EUR
1000+0.079 EUR
Mindestbestellmenge: 56
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SMUN5111DW1T1G dta114ed-d.pdf
SMUN5111DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 2PNP 50V SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 PNP - Pre-Biased (Dual)
Power - Max: 385mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300nA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Supplier Device Package: SC-88/SC70-6/SOT-363
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 18020 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
66+0.27 EUR
106+0.17 EUR
500+0.12 EUR
1000+0.11 EUR
Mindestbestellmenge: 40
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SMUN5311DW1T1G dtc114ep-d.pdf
SMUN5311DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 35 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 10kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 93407 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
42+0.42 EUR
71+0.25 EUR
113+0.16 EUR
500+0.12 EUR
1000+0.1 EUR
Mindestbestellmenge: 42
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SZMMBZ27VALT1G mmbz5v6alt1-d.pdf
SZMMBZ27VALT1G
Hersteller: onsemi
Description: DIODE ZENER ARRAY 27V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: Automotive
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 40V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 27 V
Grade: Automotive
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 22 V
Qualification: AEC-Q101
auf Bestellung 4592 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
77+0.23 EUR
124+0.14 EUR
350+0.05 EUR
500+0.049 EUR
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SZMMBZ27VCLT1G mmbz15vdlt1-d.pdf
SZMMBZ27VCLT1G
Hersteller: onsemi
Description: TVS DIODE 22VWM 38VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 1A
Voltage - Reverse Standoff (Typ): 22V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 25.65V
Voltage - Clamping (Max) @ Ipp: 38V
Power - Peak Pulse: 40W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 35842 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
100+0.18 EUR
205+0.086 EUR
263+0.067 EUR
500+0.065 EUR
1000+0.064 EUR
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SZMMBZ5V6ALT1G mmbz5v6alt1-d.pdf
SZMMBZ5V6ALT1G
Hersteller: onsemi
Description: DIODE ZENER ARRAY 5.6V SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Current - Peak Pulse (10/1000µs): 3A
Voltage - Reverse Standoff (Typ): 3V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Bidirectional Channels: 1
Voltage - Breakdown (Min): 5.32V
Voltage - Clamping (Max) @ Ipp: 8V
Power - Peak Pulse: 24W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Tolerance: ±5%
Configuration: 1 Pair Common Anode
Voltage - Zener (Nom) (Vz): 5.6 V
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 3 V
auf Bestellung 5987 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
46+0.39 EUR
75+0.24 EUR
121+0.15 EUR
500+0.11 EUR
1000+0.094 EUR
Mindestbestellmenge: 46
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SZNUP2105LT1G nup2105l-d.pdf
SZNUP2105LT1G
Hersteller: onsemi
Description: TVS DIODE 24VWM 44VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 30pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 24V (Min)
Supplier Device Package: SOT-23-3 (TO-236)
Bidirectional Channels: 2
Voltage - Breakdown (Min): 26.2V
Voltage - Clamping (Max) @ Ipp: 44V
Power - Peak Pulse: 350W
Power Line Protection: No
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB060AN08A0 fdp060an08a0-d.pdf
FDB060AN08A0
Hersteller: onsemi
Description: MOSFET N-CH 75V 16A/80A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 80A (Tc)
Rds On (Max) @ Id, Vgs: 6mOhm @ 80A, 10V
Power Dissipation (Max): 255W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 75 V
Gate Charge (Qg) (Max) @ Vgs: 95 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5150 pF @ 25 V
auf Bestellung 2841 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.69 EUR
10+5.1 EUR
100+3.62 EUR
Mindestbestellmenge: 3
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HUF76439S3ST huf76439s3s-d.pdf
HUF76439S3ST
Hersteller: onsemi
Description: MOSFET N-CH 60V 75A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 75A (Tc)
Rds On (Max) @ Id, Vgs: 12mOhm @ 75A, 10V
Power Dissipation (Max): 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±16V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2745 pF @ 25 V
auf Bestellung 3171 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.42 EUR
10+3.52 EUR
100+2.45 EUR
Mindestbestellmenge: 4
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FIN1019MTCX FIN1019.pdf
FIN1019MTCX
Hersteller: onsemi
Description: IC TRANSCEIVER FULL 1/1 14TSSOP
Packaging: Cut Tape (CT)
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 85°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 400Mbps
Protocol: LVDS
Supplier Device Package: 14-TSSOP
Duplex: Full
Part Status: Active
auf Bestellung 4917 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.61 EUR
10+2.93 EUR
25+2.51 EUR
100+2.05 EUR
250+1.83 EUR
500+1.69 EUR
1000+1.58 EUR
Mindestbestellmenge: 4
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FSUSB11MTCX fsusb11-d.pdf
FSUSB11MTCX
Hersteller: onsemi
Description: IC USB SWITCH DUAL 1X1 14TSSOP
Packaging: Cut Tape (CT)
Features: Break-Before-Make, USB 1.1
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: USB
On-State Resistance (Max): 1.5Ohm
-3db Bandwidth: 350MHz
Supplier Device Package: 14-TSSOP
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Switch Circuit: SPDT
Multiplexer/Demultiplexer Circuit: 2:1
Number of Channels: 2
Produkt ist nicht verfügbar
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FDD86250 fdd86250-d.pdf
FDD86250
Hersteller: onsemi
Description: MOSFET N-CH 150V 8A/50A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8A (Ta), 50A (Tc)
Rds On (Max) @ Id, Vgs: 22mOhm @ 8A, 10V
Power Dissipation (Max): 3.1W (Ta), 132W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 33 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2110 pF @ 75 V
auf Bestellung 2176 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+4.22 EUR
10+2.88 EUR
100+2.07 EUR
500+1.71 EUR
1000+1.6 EUR
Mindestbestellmenge: 5
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FDD5N50NZFTM ONSM-S-A0003590038-1.pdf?t.download=true&u=5oefqw
FDD5N50NZFTM
Hersteller: onsemi
Description: MOSFET N-CH 500V 3.7A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 3.7A (Tc)
Rds On (Max) @ Id, Vgs: 1.75Ohm @ 1.85A, 10V
Power Dissipation (Max): 62.5W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 500 V
Gate Charge (Qg) (Max) @ Vgs: 12 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 485 pF @ 25 V
Produkt ist nicht verfügbar
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FDMC8200S fdmc8200s-d.pdf
FDMC8200S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 6A/8.5A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 6A, 8.5A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 20mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 10742 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.97 EUR
10+1.89 EUR
100+1.27 EUR
500+1 EUR
1000+0.92 EUR
Mindestbestellmenge: 6
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LM431SCCMLX lm431sa-d.pdf
LM431SCCMLX
Hersteller: onsemi
Description: IC VREF SHUNT ADJ 0.5% SOT89-3
Tolerance: ±0.5%
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Temperature Coefficient: 50ppm/°C Typical
Output Type: Adjustable
Mounting Type: Surface Mount
Reference Type: Shunt
Operating Temperature: -25°C ~ 85°C (TA)
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 2.495V
Current - Cathode: 1 mA
Current - Output: 100 mA
Voltage - Output (Max): 36 V
auf Bestellung 3679 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
34+0.52 EUR
38+0.47 EUR
100+0.4 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.34 EUR
Mindestbestellmenge: 24
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NC7SV32L6X nc7sv32-d.pdf
NC7SV32L6X
Hersteller: onsemi
Description: IC GATE OR 1CH 2-INP 6MICROPAK
auf Bestellung 128005 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
28+0.64 EUR
30+0.59 EUR
100+0.48 EUR
250+0.44 EUR
500+0.37 EUR
1000+0.29 EUR
2500+0.28 EUR
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GF1G ONSM-S-A0003589161-1.pdf?t.download=true&u=5oefqw
GF1G
Hersteller: onsemi
Description: DIODE GEN PURP 400V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 2 µs
Technology: Standard
Capacitance @ Vr, F: 15pF @ 4V, 1MHz
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1 V @ 1 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 48343 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
30+0.59 EUR
100+0.38 EUR
500+0.28 EUR
1000+0.25 EUR
2000+0.23 EUR
Mindestbestellmenge: 19
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FDB035N10A fdb035n10a-d.pdf
FDB035N10A
Hersteller: onsemi
Description: MOSFET N-CH 100V 120A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 120A (Tc)
Rds On (Max) @ Id, Vgs: 3.5mOhm @ 75A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 116 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7295 pF @ 25 V
auf Bestellung 967 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.44 EUR
10+7.14 EUR
100+5.41 EUR
Mindestbestellmenge: 2
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RURD460S9A rurd460s-d.pdf
RURD460S9A
Hersteller: onsemi
Description: DIODE GEN PURP 600V 4A TO252AA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Capacitance @ Vr, F: 15pF @ 10V, 1MHz
Current - Average Rectified (Io): 4A
Supplier Device Package: TO-252AA
Operating Temperature - Junction: -65°C ~ 175°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 1.5 V @ 4 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Produkt ist nicht verfügbar
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74LCX541BQX
74LCX541BQX
Hersteller: onsemi
Description: IC BUF NON-INVERT 3.6V 20DQFN
Packaging: Cut Tape (CT)
Package / Case: 20-WFQFN Exposed Pad
Output Type: 3-State
Mounting Type: Surface Mount
Number of Elements: 1
Logic Type: Buffer, Non-Inverting
Operating Temperature: -40°C ~ 85°C (TA)
Voltage - Supply: 2V ~ 3.6V
Number of Bits per Element: 8
Current - Output High, Low: 24mA, 24mA
Supplier Device Package: 20-DQFN (2.5x4.5)
Part Status: Obsolete
Produkt ist nicht verfügbar
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FDMC86102LZ fdmc86102lz-d.pdf
FDMC86102LZ
Hersteller: onsemi
Description: MOSFET N-CH 100V 7A/18A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 7A (Ta), 18A (Tc)
Rds On (Max) @ Id, Vgs: 24mOhm @ 6.5A, 10V
Power Dissipation (Max): 2.3W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 41361 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.54 EUR
10+2.4 EUR
100+1.75 EUR
500+1.47 EUR
1000+1.35 EUR
Mindestbestellmenge: 5
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EGP20G egp20k-d.pdf
EGP20G
Hersteller: onsemi
Description: DIODE STANDARD 400V 2A DO15
Packaging: Cut Tape (CT)
Package / Case: DO-204AC, DO-15, Axial
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 50 ns
Technology: Standard
Capacitance @ Vr, F: 45pF @ 4V, 1MHz
Current - Average Rectified (Io): 2A
Supplier Device Package: DO-15
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 2 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
auf Bestellung 3991 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.51 EUR
18+1.01 EUR
100+0.77 EUR
500+0.59 EUR
1000+0.54 EUR
2000+0.49 EUR
Mindestbestellmenge: 12
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SS18 ss19-d.pdf
SS18
Hersteller: onsemi
Description: DIODE SCHOTTKY 80V 1A DO214AC
Packaging: Cut Tape (CT)
Package / Case: DO-214AC, SMA
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: DO-214AC (SMA)
Operating Temperature - Junction: -65°C ~ 125°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 80 V
Voltage - Forward (Vf) (Max) @ If: 850 mV @ 1 A
Current - Reverse Leakage @ Vr: 200 µA @ 80 V
auf Bestellung 32544 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
30+0.6 EUR
40+0.44 EUR
100+0.37 EUR
500+0.3 EUR
1000+0.27 EUR
Mindestbestellmenge: 30
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74LVT16374MTDX 74lvt16374-d.pdf
74LVT16374MTDX
Hersteller: onsemi
Description: IC FF D-TYPE DUAL 8BIT 48TSSOP
auf Bestellung 420 Stücke:
Lieferzeit 10-14 Tag (e)
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FDMC8622 fdmc8622-d.pdf
FDMC8622
Hersteller: onsemi
Description: MOSFET N-CH 100V 4A/16A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 4A (Ta), 16A (Tc)
Rds On (Max) @ Id, Vgs: 56mOhm @ 4A, 10V
Power Dissipation (Max): 2.5W (Ta), 31W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 7.3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 402 pF @ 50 V
auf Bestellung 20076 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.82 EUR
10+2.07 EUR
100+1.56 EUR
500+1.19 EUR
1000+1.09 EUR
Mindestbestellmenge: 7
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KA79M12RTF KA79Mxx%2CLM79M05.pdf
KA79M12RTF
Hersteller: onsemi
Description: IC REG LINEAR -12V 500MA DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 500mA
Operating Temperature: 0°C ~ 125°C
Output Configuration: Negative
Current - Quiescent (Iq): 6 mA
Voltage - Input (Max): -35V
Number of Regulators: 1
Supplier Device Package: DPAK
Voltage - Output (Min/Fixed): -12V
Part Status: Obsolete
PSRR: 60dB (120Hz)
Voltage Dropout (Max): 1.1V @ 500mA
Protection Features: Over Temperature, Short Circuit
Produkt ist nicht verfügbar
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