FDMS8820 ON Semiconductor
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.88 EUR |
Artikel auf Bestellung
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Lieferzeit:
14-21 Tag (e)
Mindestmenge:
3000 Stücke
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Technische Details FDMS8820 ON Semiconductor
Description: MOSFET N-CH 30V 28A/116A 8PQFN, Packaging: Tape & Reel (TR), Package / Case: 8-PowerTDFN, Mounting Type: Surface Mount, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: N-Channel, Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc), Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V, Power Dissipation (Max): 2.5W (Ta), 78W (Tc), Vgs(th) (Max) @ Id: 2.5V @ 250µA, Supplier Device Package: 8-PQFN (5x6), Part Status: Active, Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 30 V, Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V.
Weitere Produktangebote FDMS8820 nach Preis ab 0.88 EUR bis 3.53 EUR
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FDMS8820 | onsemi |
 Description: MOSFET N-CH 30V 28A/116A 8PQFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8820 | ON Semiconductor |
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8820 | ON Semiconductor |
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R |
auf Bestellung 3000 Stücke: Lieferzeit 14-21 Tag (e) |
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FDMS8820 | onsemi / Fairchild |
MOSFETs NCh 30V 116A 2.4mOhm |
auf Bestellung 17199 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8820 | onsemi |
Description: MOSFET N-CH 30V 28A/116A 8PQFN Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc) Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V Power Dissipation (Max): 2.5W (Ta), 78W (Tc) Vgs(th) (Max) @ Id: 2.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V |
auf Bestellung 21741 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8820 | onsemi |
MOSFETs NCh 30V 116A 2.4mOhm |
auf Bestellung 2800 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDMS8820 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.93 EUR |
| 6000+ | 0.88 EUR |
| FDMS8820 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.44 EUR |
| FDMS8820 |
|
Hersteller: ON Semiconductor
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R
Trans MOSFET N-CH Si 30V 28A 8-Pin PQFN EP T/R
auf Bestellung 3000 Stücke:
Lieferzeit 14-21 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.54 EUR |
| FDMS8820 |
|
Hersteller: onsemi / Fairchild
MOSFETs NCh 30V 116A 2.4mOhm
MOSFETs NCh 30V 116A 2.4mOhm
auf Bestellung 17199 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.4 EUR |
| 10+ | 1.86 EUR |
| 100+ | 1.27 EUR |
| 500+ | 1.12 EUR |
| 1000+ | 1 EUR |
| 3000+ | 0.96 EUR |
| FDMS8820 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
Description: MOSFET N-CH 30V 28A/116A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 28A (Ta), 116A (Tc)
Rds On (Max) @ Id, Vgs: 2mOhm @ 28A, 10V
Power Dissipation (Max): 2.5W (Ta), 78W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5315 pF @ 15 V
auf Bestellung 21741 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.39 EUR |
| 10+ | 2.15 EUR |
| 100+ | 1.45 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.05 EUR |
| FDMS8820 |
|
Hersteller: onsemi
MOSFETs NCh 30V 116A 2.4mOhm
MOSFETs NCh 30V 116A 2.4mOhm
auf Bestellung 2800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.53 EUR |
| 10+ | 1.7 EUR |
| 100+ | 1.51 EUR |
| 500+ | 1.2 EUR |
| 1000+ | 1.17 EUR |
| 3000+ | 0.98 EUR |