Produkte > ONSEMI > FGA25S125P
FGA25S125P

FGA25S125P onsemi


fga25s125p-d.pdf
Hersteller: onsemi
Description: IGBT 1250V 50A 250W TO-3PN
Power - Max: 250 W
Current - Collector Pulsed (Icm): 75 A
Voltage - Collector Emitter Breakdown (Max): 1250 V
Current - Collector (Ic) (Max): 50 A
Part Status: Obsolete
Gate Charge: 204 nC
IGBT Type: Trench Field Stop
Supplier Device Package: TO-3PN
Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A
Input Type: Standard
Mounting Type: Through Hole
Package / Case: TO-3P-3, SC-65-3
Packaging: Tube
Produkt ist nicht verfügbar

Im Einkaufswagen  Stück im Wert von  UAH
Produktrezensionen
Produktbewertung abgeben

Technische Details FGA25S125P onsemi

Description: IGBT 1250V 50A 250W TO-3PN, Power - Max: 250 W, Current - Collector Pulsed (Icm): 75 A, Voltage - Collector Emitter Breakdown (Max): 1250 V, Current - Collector (Ic) (Max): 50 A, Part Status: Obsolete, Gate Charge: 204 nC, IGBT Type: Trench Field Stop, Supplier Device Package: TO-3PN, Vce(on) (Max) @ Vge, Ic: 2.35V @ 15V, 25A, Input Type: Standard, Mounting Type: Through Hole, Package / Case: TO-3P-3, SC-65-3, Packaging: Tube.

Weitere Produktangebote FGA25S125P

Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
FGA25S125P FGA25S125P Hersteller : onsemi / Fairchild FGA25S125P_D-2313054.pdf IGBT Transistors Shorted Anode IGBT
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH