FDB9406-F085 onsemi / Fairchild
| Anzahl | Preis |
|---|---|
| 1+ | 5.68 EUR |
| 10+ | 5.14 EUR |
| 100+ | 4.22 EUR |
| 500+ | 3.59 EUR |
| 800+ | 3.01 EUR |
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Technische Details FDB9406-F085 onsemi / Fairchild
Description: MOSFET N-CH 40V 110A D2PAK, Qualification: AEC-Q101, Grade: Automotive, FET Type: N-Channel, Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V, Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V, Drain to Source Voltage (Vdss): 40 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 10V, Part Status: Active, Supplier Device Package: TO-263 (D2Pak), Vgs(th) (Max) @ Id: 4V @ 250µA, Power Dissipation (Max): 176W (Tj), Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V, Current - Continuous Drain (Id) @ 25°C: 110A (Tc), Technology: MOSFET (Metal Oxide), Operating Temperature: -55°C ~ 175°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB, Packaging: Tape & Reel (TR).
Weitere Produktangebote FDB9406-F085 nach Preis ab 3 EUR bis 5.91 EUR
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FDB9406-F085 | onsemi |
 Description: MOSFET N-CH 40V 110A D2PAKQualification: AEC-Q101 Grade: Automotive Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V Drain to Source Voltage (Vdss): 40 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 176W (Tj) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) |
auf Bestellung 536 Stücke: Lieferzeit 10-14 Tag (e) |
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| FDB9406-F085 | ON Semiconductor |
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auf Bestellung 795 Stücke: Lieferzeit 21-28 Tag (e) |
Im Einkaufswagen Stück im Wert von UAH |
| FDB9406-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 40V 110A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Description: MOSFET N-CH 40V 110A D2PAK
Qualification: AEC-Q101
Grade: Automotive
Gate Charge (Qg) (Max) @ Vgs: 138 nC @ 10 V
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Input Capacitance (Ciss) (Max) @ Vds: 7710 pF @ 25 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 176W (Tj)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
auf Bestellung 536 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis |
|---|---|
| 3+ | 5.91 EUR |
| 10+ | 4.1 EUR |
| 100+ | 3 EUR |
| FDB9406-F085 |
|
Hersteller: ON Semiconductor
auf Bestellung 795 Stücke:
Lieferzeit 21-28 Tag (e)