FDZ1323NZ onsemi
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WLCSP (1.3x2.3)
Part Status: Active
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.79 EUR |
Artikel auf Bestellung
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Lieferzeit:
10-14 Tag (e)
Mindestmenge:
5000 Stücke
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Technische Details FDZ1323NZ onsemi
Description: MOSFET 2N-CH 20V 10A 6WLCSP, Packaging: Tape & Reel (TR), Package / Case: 6-XFBGA, WLCSP, Mounting Type: Surface Mount, Configuration: 2 N-Channel (Dual) Common Drain, Operating Temperature: -55°C ~ 150°C (TJ), Technology: MOSFET (Metal Oxide), Power - Max: 500mW, Drain to Source Voltage (Vdss): 20V, Current - Continuous Drain (Id) @ 25°C: 10A, Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V, Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V, Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V, FET Feature: Logic Level Gate, Vgs(th) (Max) @ Id: 1.2V @ 250µA, Supplier Device Package: 6-WLCSP (1.3x2.3), Part Status: Active.
Weitere Produktangebote FDZ1323NZ nach Preis ab 0.77 EUR bis 3.09 EUR
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FDZ1323NZ | onsemi / Fairchild |
MOSFETs 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET |
auf Bestellung 4714 Stücke: Lieferzeit 10-14 Tag (e) |
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FDZ1323NZ | onsemi |
MOSFETs 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET |
auf Bestellung 8816 Stücke: Lieferzeit 10-14 Tag (e) |
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FDZ1323NZ | onsemi |
Description: MOSFET 2N-CH 20V 10A 6WLCSP Packaging: Cut Tape (CT) Package / Case: 6-XFBGA, WLCSP Mounting Type: Surface Mount Configuration: 2 N-Channel (Dual) Common Drain Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) Power - Max: 500mW Drain to Source Voltage (Vdss): 20V Current - Continuous Drain (Id) @ 25°C: 10A Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V FET Feature: Logic Level Gate Vgs(th) (Max) @ Id: 1.2V @ 250µA Supplier Device Package: 6-WLCSP (1.3x2.3) Part Status: Active |
auf Bestellung 12989 Stücke: Lieferzeit 10-14 Tag (e) |
|
| FDZ1323NZ |
|
Hersteller: onsemi / Fairchild
MOSFETs 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
MOSFETs 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
auf Bestellung 4714 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 2.84 EUR |
| 10+ | 2.2 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.11 EUR |
| FDZ1323NZ |
|
Hersteller: onsemi
MOSFETs 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
MOSFETs 20V Common Drain N-Channel 2.5 V PowerTrench WL-CSP MOSFET
auf Bestellung 8816 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 3.03 EUR |
| 10+ | 1.93 EUR |
| 100+ | 1.29 EUR |
| 500+ | 1.01 EUR |
| 1000+ | 0.84 EUR |
| 2500+ | 0.77 EUR |
| FDZ1323NZ |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WLCSP (1.3x2.3)
Part Status: Active
Description: MOSFET 2N-CH 20V 10A 6WLCSP
Packaging: Cut Tape (CT)
Package / Case: 6-XFBGA, WLCSP
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Common Drain
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 500mW
Drain to Source Voltage (Vdss): 20V
Current - Continuous Drain (Id) @ 25°C: 10A
Input Capacitance (Ciss) (Max) @ Vds: 2055pF @ 10V
Rds On (Max) @ Id, Vgs: 13mOhm @ 1A, 4.5V
Gate Charge (Qg) (Max) @ Vgs: 24nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Supplier Device Package: 6-WLCSP (1.3x2.3)
Part Status: Active
auf Bestellung 12989 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 7+ | 3.09 EUR |
| 11+ | 1.96 EUR |
| 50+ | 1.46 EUR |
| 100+ | 1.31 EUR |
| 500+ | 1.02 EUR |