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FMB5551

FMB5551 onsemi / Fairchild

FMB5551-D.PDF
Hersteller: onsemi / Fairchild
Bipolar Transistors - BJT NPN Transistor General Purpose
auf Bestellung 3668 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+0.77 EUR
10+0.48 EUR
100+0.31 EUR
500+0.24 EUR
1000+0.21 EUR
3000+0.19 EUR
6000+0.17 EUR
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Technische Details FMB5551 onsemi / Fairchild

Description: TRANS 2NPN 160V 600MA SUPERSOT6, Packaging: Tape & Reel (TR), Package / Case: SOT-23-6 Thin, TSOT-23-6, Mounting Type: Surface Mount, Transistor Type: 2 NPN (Dual), Operating Temperature: 150°C (TJ), Power - Max: 700mW, Current - Collector (Ic) (Max): 600mA, Voltage - Collector Emitter Breakdown (Max): 160V, Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA, Current - Collector Cutoff (Max): 50nA (ICBO), DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V, Frequency - Transition: 300MHz, Supplier Device Package: SuperSOT™-6, Part Status: Active.

Weitere Produktangebote FMB5551 nach Preis ab 0.23 EUR bis 0.86 EUR

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FMB5551 FMB5551 onsemi fmb5551-d.pdf Description: TRANS 2NPN 160V 600MA SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 3769 Stücke:
Lieferzeit 10-14 Tag (e)
21+0.86 EUR
34+0.53 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FMB5551 FMB5551 onsemi fmb5551-d.pdf Description: TRANS 2NPN 160V 600MA SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH
FMB5551 fmb5551-d.pdf
FMB5551
Hersteller: onsemi
Description: TRANS 2NPN 160V 600MA SUPERSOT6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 3769 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
34+0.53 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
Mindestbestellmenge: 21 Stücke
Im Einkaufswagen  Stück im Wert von  UAH
FMB5551 fmb5551-d.pdf
FMB5551
Hersteller: onsemi
Description: TRANS 2NPN 160V 600MA SUPERSOT6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6 Thin, TSOT-23-6
Mounting Type: Surface Mount
Transistor Type: 2 NPN (Dual)
Operating Temperature: 150°C (TJ)
Power - Max: 700mW
Current - Collector (Ic) (Max): 600mA
Voltage - Collector Emitter Breakdown (Max): 160V
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 50nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Frequency - Transition: 300MHz
Supplier Device Package: SuperSOT™-6
Part Status: Active
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Im Einkaufswagen  Stück im Wert von  UAH