SBE818-TL-E onsemi
Hersteller: onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 15 V
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH
Packaging: Bulk
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 2 Independent
Current - Average Rectified (Io) (per Diode): 2A
Supplier Device Package: 8-EMH
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Obsolete
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A
Current - Reverse Leakage @ Vr: 7.5 µA @ 15 V
auf Bestellung 1439 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Preis ohne MwSt |
|---|---|
| 1439+ | 0.44 EUR |
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Technische Details SBE818-TL-E onsemi
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH, Packaging: Tape & Reel (TR), Package / Case: 8-SMD, Flat Lead, Mounting Type: Surface Mount, Speed: Fast Recovery =< 500ns, > 200mA (Io), Reverse Recovery Time (trr): 10 ns, Technology: Schottky, Diode Configuration: 2 Independent, Current - Average Rectified (Io) (per Diode): 2A, Supplier Device Package: 8-EMH, Operating Temperature - Junction: -55°C ~ 125°C, Part Status: Obsolete, Voltage - DC Reverse (Vr) (Max): 30 V, Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A, Current - Reverse Leakage @ Vr: 7.5 µA @ 15 V.
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SBE818-TL-E | Hersteller : onsemi |
Description: DIODE ARRAY SCHOTTKY 30V 2A 8EMH Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Flat Lead Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Reverse Recovery Time (trr): 10 ns Technology: Schottky Diode Configuration: 2 Independent Current - Average Rectified (Io) (per Diode): 2A Supplier Device Package: 8-EMH Operating Temperature - Junction: -55°C ~ 125°C Part Status: Obsolete Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 620 mV @ 2 A Current - Reverse Leakage @ Vr: 7.5 µA @ 15 V |
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