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SBAV99LT1G SBAV99LT1G onsemi bav99lt1-d.pdf Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1096 Stücke:
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112+0.16 EUR
278+0.063 EUR
316+0.056 EUR
500+0.053 EUR
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SBAV99WT1G SBAV99WT1G onsemi bav99wt1-d.pdf Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 29490 Stücke:
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91+0.19 EUR
136+0.13 EUR
153+0.12 EUR
500+0.081 EUR
1000+0.074 EUR
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SBC846ALT1G SBC846ALT1G onsemi bc846alt1-d.pdf Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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109+0.16 EUR
175+0.1 EUR
500+0.073 EUR
1000+0.064 EUR
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SBC846BLT1G SBC846BLT1G onsemi bc846alt1-d.pdf Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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117+0.15 EUR
190+0.093 EUR
500+0.067 EUR
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SFT1345-TL-H SFT1345-TL-H onsemi sft1345-d.pdf Description: MOSFET P-CH 100V 11A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Produkt ist nicht verfügbar
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SL12T1G SL12T1G onsemi sl05t1-d.pdf Description: TVS DIODE 12VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 3.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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55+0.33 EUR
100+0.28 EUR
500+0.25 EUR
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SM15T1G SM15T1G onsemi sm05t1-d.pdf Description: TVS DIODE 15VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
auf Bestellung 23866 Stücke:
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40+0.44 EUR
100+0.3 EUR
500+0.24 EUR
1000+0.19 EUR
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SMMBT3906LT1G SMMBT3906LT1G onsemi mmbt3906lt1-d.pdf Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36897 Stücke:
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72+0.25 EUR
121+0.15 EUR
196+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
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SMMBT5551LT1G SMMBT5551LT1G onsemi mmbt5550lt1-d.pdf Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
auf Bestellung 11272 Stücke:
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56+0.32 EUR
91+0.19 EUR
147+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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SMUN5214DW1T1G SMUN5214DW1T1G onsemi dtc114yd-d.pdf Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30464 Stücke:
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39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
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SMUN5313DW1T1G SMUN5313DW1T1G onsemi dtc144ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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72+0.25 EUR
115+0.15 EUR
500+0.11 EUR
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SURS8340T3G SURS8340T3G onsemi murs320t3-d.pdf Description: DIODE STANDARD 400V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
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SZMM3Z15VT1G SZMM3Z15VT1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 15V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
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47+0.38 EUR
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500+0.15 EUR
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SZMM3Z4V7T1G SZMM3Z4V7T1G onsemi MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf Description: DIODE ZENER 4.7V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22788 Stücke:
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134+0.13 EUR
500+0.1 EUR
1000+0.09 EUR
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SZMMSZ5231BT1G SZMMSZ5231BT1G onsemi mmsz5221bt1-d.pdf Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1278 Stücke:
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97+0.18 EUR
194+0.091 EUR
500+0.089 EUR
1000+0.088 EUR
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SZNUD3124DMT1G SZNUD3124DMT1G onsemi nud3124-d.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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40+0.45 EUR
44+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.29 EUR
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SZNUD3124LT1G SZNUD3124LT1G onsemi nud3124-d.pdf Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
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34+0.53 EUR
38+0.48 EUR
100+0.41 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.35 EUR
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SZNUD3160DMT1G SZNUD3160DMT1G onsemi nud3160-d.pdf Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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29+0.61 EUR
33+0.55 EUR
100+0.48 EUR
250+0.44 EUR
500+0.42 EUR
1000+0.41 EUR
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TL494BDR2G TL494BDR2G onsemi tl494-d.pdf Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
auf Bestellung 6205 Stücke:
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16+1.11 EUR
25+1 EUR
100+0.88 EUR
250+0.82 EUR
500+0.79 EUR
1000+0.76 EUR
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VEC2616-TL-H VEC2616-TL-H onsemi Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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FDBL0110N60 FDBL0110N60 onsemi fdbl0110n60-d.pdf Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Produkt ist nicht verfügbar
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FDBL0150N80 FDBL0150N80 onsemi fdbl0150n80-d.pdf Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 2000 Stücke:
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2000+3.76 EUR
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FDMC8010ET30 FDMC8010ET30 onsemi fdmc8010et30-d.pdf Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Produkt ist nicht verfügbar
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FDMS8050ET30 FDMS8050ET30 onsemi fdms8050et30-d.pdf Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
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FCB290N80 FCB290N80 onsemi fcb290n80-d.pdf Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
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FDBL0110N60 FDBL0110N60 onsemi fdbl0110n60-d.pdf Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
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FDBL0150N80 FDBL0150N80 onsemi fdbl0150n80-d.pdf Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
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FDMS8050ET30 FDMS8050ET30 onsemi fdms8050et30-d.pdf Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
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FCB290N80 FCB290N80 onsemi fcb290n80-d.pdf Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
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NCP785AH150T1G NCP785AH150T1G onsemi ncp785a-d.pdf Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP785AH33T1G NCP785AH33T1G onsemi ncp785a-d.pdf Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP785AH50T1G NCP785AH50T1G onsemi ncp785a-d.pdf Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP785AH150T1G NCP785AH150T1G onsemi ncp785a-d.pdf Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP785AH33T1G NCP785AH33T1G onsemi ncp785a-d.pdf Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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NCP785AH50T1G NCP785AH50T1G onsemi ncp785a-d.pdf Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
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FDMA86108LZ FDMA86108LZ onsemi fdma86108lz-d.pdf Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
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FDMA86108LZ FDMA86108LZ onsemi fdma86108lz-d.pdf Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
auf Bestellung 53131 Stücke:
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FAN54020UCX FAN54020UCX onsemi FAN54020.pdf Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.5A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 7.5V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
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FDMT800150DC FDMT800150DC onsemi fdmt800150dc-d.pdf Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
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FDMT800100DC FDMT800100DC onsemi fdmt800100dc-d.pdf Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Produkt ist nicht verfügbar
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FDMT800150DC FDMT800150DC onsemi fdmt800150dc-d.pdf Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
auf Bestellung 55367 Stücke:
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FDMT800100DC FDMT800100DC onsemi fdmt800100dc-d.pdf Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
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FSA553UCX FSA553UCX onsemi fsa553-d.pdf Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
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FSA553UCX FSA553UCX onsemi fsa553-d.pdf Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
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3LN01SS-TL-E 3LN01SS-TL-E onsemi 3LN01SS.pdf Description: MOSFET N-CH 30V 150MA SC81
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NDDP010N25AZT4H NDDP010N25AZT4H onsemi nddp010n25az-d.pdf Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Produkt ist nicht verfügbar
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TND321VD-TL-H TND321VD-TL-H onsemi tnd321vd-d.pdf Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
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TND322VD-TL-H TND322VD-TL-H onsemi tnd322vd-d.pdf Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
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TND323VD-TL-H TND323VD-TL-H onsemi TND323VD-D.PDF Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
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FDN86501LZ FDN86501LZ onsemi fdn86501lz-d.pdf Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
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FDN86501LZ FDN86501LZ onsemi fdn86501lz-d.pdf Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
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FDMC86262P FDMC86262P onsemi fdmc86262p-d.pdf Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
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FDMC86262P FDMC86262P onsemi fdmc86262p-d.pdf Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
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FNA25060 FNA25060 onsemi fna25060-d.pdf Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
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FDMS86368-F085 FDMS86368-F085 onsemi fdms86368_f085-d.pdf Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB86563-F085 FDB86563-F085 onsemi fdb86563_f085-d.pdf Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Produkt ist nicht verfügbar
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FCB110N65F FCB110N65F onsemi fcb110n65f-d.pdf Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
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FDMS86368-F085 FDMS86368-F085 onsemi fdms86368_f085-d.pdf Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB86563-F085 FDB86563-F085 onsemi fdb86563_f085-d.pdf Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Produkt ist nicht verfügbar
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FCB110N65F FCB110N65F onsemi fcb110n65f-d.pdf Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 3051 Stücke:
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2+11.4 EUR
10+7.72 EUR
100+5.85 EUR
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SBAV99LT1G bav99lt1-d.pdf
SBAV99LT1G
Hersteller: onsemi
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
112+0.16 EUR
278+0.063 EUR
316+0.056 EUR
500+0.053 EUR
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SBAV99WT1G bav99wt1-d.pdf
SBAV99WT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
91+0.19 EUR
136+0.13 EUR
153+0.12 EUR
500+0.081 EUR
1000+0.074 EUR
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SBC846ALT1G bc846alt1-d.pdf
SBC846ALT1G
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30733 Stücke:
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63+0.28 EUR
109+0.16 EUR
175+0.1 EUR
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SBC846BLT1G bc846alt1-d.pdf
SBC846BLT1G
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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72+0.25 EUR
117+0.15 EUR
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SFT1345-TL-H sft1345-d.pdf
SFT1345-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 100V 11A TP-FA
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Supplier Device Package: TP-FA
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Produkt ist nicht verfügbar
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SL12T1G sl05t1-d.pdf
SL12T1G
Hersteller: onsemi
Description: TVS DIODE 12VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Capacitance @ Frequency: 3.5pF @ 1MHz
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Voltage - Reverse Standoff (Typ): 12V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 1
Voltage - Breakdown (Min): 13.3V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Grade: Automotive
Qualification: AEC-Q101
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Anzahl Preis
46+0.39 EUR
55+0.33 EUR
100+0.28 EUR
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SM15T1G sm05t1-d.pdf
SM15T1G
Hersteller: onsemi
Description: TVS DIODE 15VWM 24VC SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 150°C (TJ)
Applications: General Purpose
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Voltage - Reverse Standoff (Typ): 15V
Supplier Device Package: SOT-23-3 (TO-236)
Unidirectional Channels: 2
Voltage - Breakdown (Min): 16.7V
Voltage - Clamping (Max) @ Ipp: 24V
Power - Peak Pulse: 300W
Power Line Protection: No
Part Status: Active
auf Bestellung 23866 Stücke:
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28+0.63 EUR
40+0.44 EUR
100+0.3 EUR
500+0.24 EUR
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SMMBT3906LT1G mmbt3906lt1-d.pdf
SMMBT3906LT1G
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 36897 Stücke:
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Anzahl Preis
72+0.25 EUR
121+0.15 EUR
196+0.09 EUR
500+0.065 EUR
1000+0.057 EUR
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SMMBT5551LT1G mmbt5550lt1-d.pdf
SMMBT5551LT1G
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
auf Bestellung 11272 Stücke:
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Anzahl Preis
56+0.32 EUR
91+0.19 EUR
147+0.12 EUR
500+0.088 EUR
1000+0.077 EUR
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SMUN5214DW1T1G dtc114yd-d.pdf
SMUN5214DW1T1G
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 2 NPN - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 10kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 30464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39
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SMUN5313DW1T1G dtc144ep-d.pdf
SMUN5313DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5650 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
44+0.4 EUR
72+0.25 EUR
115+0.15 EUR
500+0.11 EUR
1000+0.1 EUR
Mindestbestellmenge: 44
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SURS8340T3G murs320t3-d.pdf
SURS8340T3G
Hersteller: onsemi
Description: DIODE STANDARD 400V 3A SMC
Packaging: Cut Tape (CT)
Package / Case: DO-214AB, SMC
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 75 ns
Technology: Standard
Current - Average Rectified (Io): 3A
Supplier Device Package: SMC
Operating Temperature - Junction: -65°C ~ 175°C
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
auf Bestellung 3136 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
31+0.58 EUR
33+0.54 EUR
Mindestbestellmenge: 31
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SZMM3Z15VT1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z15VT1G
Hersteller: onsemi
Description: DIODE ZENER 15V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 15 V
Impedance (Max) (Zzt): 30 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 50 nA @ 10.5 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
47+0.38 EUR
100+0.18 EUR
500+0.15 EUR
1000+0.11 EUR
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SZMM3Z4V7T1G MM3ZyyyT1G_SZMM3ZyyyT1G_Series_rev.11_Sep2014.pdf
SZMM3Z4V7T1G
Hersteller: onsemi
Description: DIODE ZENER 4.7V 300MW SOD323
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Operating Temperature: -65°C ~ 150°C
Voltage - Zener (Nom) (Vz): 4.7 V
Impedance (Max) (Zzt): 80 Ohms
Supplier Device Package: SOD-323
Power - Max: 300 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 3 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 22788 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
63+0.28 EUR
91+0.2 EUR
134+0.13 EUR
500+0.1 EUR
1000+0.09 EUR
Mindestbestellmenge: 63
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SZMMSZ5231BT1G mmsz5221bt1-d.pdf
SZMMSZ5231BT1G
Hersteller: onsemi
Description: DIODE ZENER 5.1V 500MW SOD123
Packaging: Cut Tape (CT)
Tolerance: ±5%
Package / Case: SOD-123
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C
Voltage - Zener (Nom) (Vz): 5.1 V
Impedance (Max) (Zzt): 17 Ohms
Supplier Device Package: SOD-123
Part Status: Active
Power - Max: 500 mW
Voltage - Forward (Vf) (Max) @ If: 900 mV @ 10 mA
Current - Reverse Leakage @ Vr: 5 µA @ 2 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1278 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
53+0.33 EUR
97+0.18 EUR
194+0.091 EUR
500+0.089 EUR
1000+0.088 EUR
Mindestbestellmenge: 53
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SZNUD3124DMT1G nud3124-d.pdf
SZNUD3124DMT1G
Hersteller: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 51441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
28+0.63 EUR
40+0.45 EUR
44+0.4 EUR
100+0.35 EUR
250+0.32 EUR
500+0.31 EUR
1000+0.29 EUR
Mindestbestellmenge: 28
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SZNUD3124LT1G nud3124-d.pdf
SZNUD3124LT1G
Hersteller: onsemi
Description: IC PWR DRVR N-CHAN 1:1 SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 1
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 800mOhm (Max)
Voltage - Load: 28V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 131355 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.76 EUR
34+0.53 EUR
38+0.48 EUR
100+0.41 EUR
250+0.38 EUR
500+0.36 EUR
1000+0.35 EUR
Mindestbestellmenge: 24
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SZNUD3160DMT1G nud3160-d.pdf
SZNUD3160DMT1G
Hersteller: onsemi
Description: IC PWR DRIVER N-CHANNEL 1:1 SC74
Packaging: Cut Tape (CT)
Package / Case: SC-74, SOT-457
Output Type: N-Channel
Mounting Type: Surface Mount
Number of Outputs: 2
Interface: On/Off
Switch Type: Relay, Solenoid Driver
Operating Temperature: -40°C ~ 125°C (TA)
Output Configuration: Low Side
Rds On (Typ): 1.8Ohm (Max)
Voltage - Load: 61V (Max)
Voltage - Supply (Vcc/Vdd): Not Required
Current - Output (Max): 150mA
Ratio - Input:Output: 1:1
Supplier Device Package: SC-74
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 45160 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
21+0.86 EUR
29+0.61 EUR
33+0.55 EUR
100+0.48 EUR
250+0.44 EUR
500+0.42 EUR
1000+0.41 EUR
Mindestbestellmenge: 21
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TL494BDR2G tl494-d.pdf
TL494BDR2G
Hersteller: onsemi
Description: IC REG CTRLR BCK/PSH-PULL 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Output Type: Transistor Driver
Mounting Type: Surface Mount
Function: Step-Down, Step-Up/Step-Down
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Frequency - Switching: 200kHz
Topology: Buck, Push-Pull
Voltage - Supply (Vcc/Vdd): 7V ~ 40V
Supplier Device Package: 16-SOIC
Synchronous Rectifier: Yes
Control Features: Dead Time Control, Frequency Control
Output Phases: 1
Duty Cycle (Max): 48%
Clock Sync: No
Part Status: Active
Number of Outputs: 2
auf Bestellung 6205 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
16+1.11 EUR
25+1 EUR
100+0.88 EUR
250+0.82 EUR
500+0.79 EUR
1000+0.76 EUR
Mindestbestellmenge: 12
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VEC2616-TL-H
VEC2616-TL-H
Hersteller: onsemi
Description: MOSFET N/P-CH 60V 3A/2.5A SOT28
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Configuration: N and P-Channel
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 60V
Current - Continuous Drain (Id) @ 25°C: 3A, 2.5A
Input Capacitance (Ciss) (Max) @ Vds: 505pF @ 20V
Rds On (Max) @ Id, Vgs: 80mOhm @ 1.5A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Supplier Device Package: SOT-28FL/VEC8
Part Status: Discontinued at Digi-Key
Produkt ist nicht verfügbar
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FDBL0110N60 fdbl0110n60-d.pdf
FDBL0110N60
Hersteller: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Produkt ist nicht verfügbar
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FDBL0150N80 fdbl0150n80-d.pdf
FDBL0150N80
Hersteller: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 2000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+3.76 EUR
Mindestbestellmenge: 2000
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FDMC8010ET30 fdmc8010et30-d.pdf
FDMC8010ET30
Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/174A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Supplier Device Package: Power33
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Produkt ist nicht verfügbar
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FDMS8050ET30 fdms8050et30-d.pdf
FDMS8050ET30
Hersteller: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+2.94 EUR
Mindestbestellmenge: 3000
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FCB290N80 fcb290n80-d.pdf
FCB290N80
Hersteller: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+5.38 EUR
Mindestbestellmenge: 800
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FDBL0110N60 fdbl0110n60-d.pdf
FDBL0110N60
Hersteller: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
auf Bestellung 1811 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.7 EUR
10+7.22 EUR
100+5.38 EUR
Mindestbestellmenge: 2
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FDBL0150N80 fdbl0150n80-d.pdf
FDBL0150N80
Hersteller: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 3106 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.18 EUR
10+5.98 EUR
100+4.3 EUR
500+4.24 EUR
Mindestbestellmenge: 3
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FDMS8050ET30 fdms8050et30-d.pdf
FDMS8050ET30
Hersteller: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
auf Bestellung 8495 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.9 EUR
10+5.26 EUR
100+3.76 EUR
500+3.59 EUR
Mindestbestellmenge: 3
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FCB290N80 fcb290n80-d.pdf
FCB290N80
Hersteller: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Power Dissipation (Max): 212W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.44 EUR
10+7.4 EUR
100+5.65 EUR
Mindestbestellmenge: 2
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NCP785AH150T1G ncp785a-d.pdf
NCP785AH150T1G
Hersteller: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.66 EUR
Mindestbestellmenge: 2500
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NCP785AH33T1G ncp785a-d.pdf
NCP785AH33T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 45000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.66 EUR
5000+0.64 EUR
7500+0.63 EUR
12500+0.62 EUR
Mindestbestellmenge: 2500
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NCP785AH50T1G ncp785a-d.pdf
NCP785AH50T1G
Hersteller: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 47500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+0.73 EUR
5000+0.71 EUR
7500+0.7 EUR
12500+0.69 EUR
Mindestbestellmenge: 2500
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NCP785AH150T1G ncp785a-d.pdf
NCP785AH150T1G
Hersteller: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 22 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 15V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 5733 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
12+1.58 EUR
25+1.32 EUR
100+1.03 EUR
250+0.89 EUR
500+0.8 EUR
1000+0.73 EUR
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NCP785AH33T1G ncp785a-d.pdf
NCP785AH33T1G
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 45279 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
13+1.39 EUR
18+1 EUR
25+0.9 EUR
100+0.79 EUR
250+0.74 EUR
500+0.71 EUR
1000+0.69 EUR
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NCP785AH50T1G ncp785a-d.pdf
NCP785AH50T1G
Hersteller: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 49741 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.53 EUR
16+1.1 EUR
25+0.99 EUR
100+0.88 EUR
250+0.82 EUR
500+0.79 EUR
1000+0.76 EUR
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FDMA86108LZ fdma86108lz-d.pdf
FDMA86108LZ
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.79 EUR
6000+0.75 EUR
9000+0.74 EUR
Mindestbestellmenge: 3000
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FDMA86108LZ fdma86108lz-d.pdf
FDMA86108LZ
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
auf Bestellung 53131 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+2.96 EUR
10+1.87 EUR
100+1.21 EUR
500+0.96 EUR
1000+0.86 EUR
Mindestbestellmenge: 6
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FAN54020UCX FAN54020.pdf
FAN54020UCX
Hersteller: onsemi
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 25-UFBGA, WLCSP
Number of Cells: 1
Mounting Type: Surface Mount
Interface: I2C
Operating Temperature: -30°C ~ 85°C (TA)
Battery Chemistry: Lithium Ion/Polymer
Supplier Device Package: 25-WLCSP (2.4x2)
Charge Current - Max: 1.5A
Programmable Features: Current, Timer, Voltage
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Voltage - Supply (Max): 7.5V
Battery Pack Voltage: 4.5V (Max)
Current - Charging: Constant - Programmable
Produkt ist nicht verfügbar
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FDMT800150DC fdmt800150dc-d.pdf
FDMT800150DC
Hersteller: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+5.72 EUR
Mindestbestellmenge: 3000
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FDMT800100DC fdmt800100dc-d.pdf
FDMT800100DC
Hersteller: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Produkt ist nicht verfügbar
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FDMT800150DC fdmt800150dc-d.pdf
FDMT800150DC
Hersteller: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
auf Bestellung 55367 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.04 EUR
10+8.91 EUR
100+7 EUR
Mindestbestellmenge: 2
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FDMT800100DC fdmt800100dc-d.pdf
FDMT800100DC
Hersteller: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
auf Bestellung 2346 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.91 EUR
10+8.35 EUR
100+7.73 EUR
Mindestbestellmenge: 2
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FSA553UCX fsa553-d.pdf
FSA553UCX
Hersteller: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.99 EUR
6000+0.97 EUR
9000+0.96 EUR
Mindestbestellmenge: 3000
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FSA553UCX fsa553-d.pdf
FSA553UCX
Hersteller: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 800mOhm
-3db Bandwidth: 200MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
auf Bestellung 9256 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.47 EUR
10+2.17 EUR
25+1.83 EUR
100+1.44 EUR
250+1.26 EUR
500+1.14 EUR
1000+1.04 EUR
Mindestbestellmenge: 6
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3LN01SS-TL-E 3LN01SS.pdf
3LN01SS-TL-E
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA SC81
Produkt ist nicht verfügbar
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NDDP010N25AZT4H nddp010n25az-d.pdf
NDDP010N25AZT4H
Hersteller: onsemi
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Supplier Device Package: DPAK/TP-FA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 250 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Produkt ist nicht verfügbar
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TND321VD-TL-H tnd321vd-d.pdf
TND321VD-TL-H
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Lead
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
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TND322VD-TL-H tnd322vd-d.pdf
TND322VD-TL-H
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
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TND323VD-TL-H TND323VD-D.PDF
TND323VD-TL-H
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Flat Leads
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 4.5V ~ 25V
Rds On (Typ): 6Ohm LS, 11Ohm HS
Applications: General Purpose
Current - Peak Output: 800mA, 1A
Technology: Power MOSFET
Voltage - Load: 4.5V ~ 25V
Supplier Device Package: SOT-28FL/VEC8
Load Type: Inductive
Part Status: Obsolete
Produkt ist nicht verfügbar
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FDN86501LZ fdn86501lz-d.pdf
FDN86501LZ
Hersteller: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.41 EUR
Mindestbestellmenge: 3000
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FDN86501LZ fdn86501lz-d.pdf
FDN86501LZ
Hersteller: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Power Dissipation (Max): 1.5W (Ta)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
auf Bestellung 60344 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.59 EUR
10+2.97 EUR
100+2.04 EUR
500+1.65 EUR
1000+1.52 EUR
Mindestbestellmenge: 4
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FDMC86262P fdmc86262p-d.pdf
FDMC86262P
Hersteller: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.75 EUR
6000+0.7 EUR
Mindestbestellmenge: 3000
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FDMC86262P fdmc86262p-d.pdf
FDMC86262P
Hersteller: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
auf Bestellung 19426 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.76 EUR
10+1.76 EUR
100+1.18 EUR
500+0.94 EUR
1000+0.86 EUR
Mindestbestellmenge: 7
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FNA25060 fna25060-d.pdf
FNA25060
Hersteller: onsemi
Description: MOD SPM 600V 50A SPMCA-A34
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Part Status: Active
Current: 50 A
Voltage: 600 V
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1+94.79 EUR
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FDMS86368-F085 fdms86368_f085-d.pdf
FDMS86368-F085
Hersteller: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB86563-F085 fdb86563_f085-d.pdf
FDB86563-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Produkt ist nicht verfügbar
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FCB110N65F fcb110n65f-d.pdf
FCB110N65F
Hersteller: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 2400 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
800+4.78 EUR
Mindestbestellmenge: 800
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86368-F085 fdms86368_f085-d.pdf
FDMS86368-F085
Hersteller: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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FDB86563-F085 fdb86563_f085-d.pdf
FDB86563-F085
Hersteller: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FCB110N65F fcb110n65f-d.pdf
FCB110N65F
Hersteller: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 3051 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.4 EUR
10+7.72 EUR
100+5.85 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
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