Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis ohne MwSt |
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MT9V032C12STM-TP | onsemi |
Description: SENSOR IMAGE VGA MONO CMOS 48LCC Packaging: Tape & Reel (TR) Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60 |
Produkt ist nicht verfügbar |
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MT9M131C12STC-DP | onsemi |
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 2.5V ~ 3.1V Pixel Size: 3.6µm x 3.6µm Active Pixel Array: 1280H x 1024V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 15 |
Produkt ist nicht verfügbar |
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MT9M131C12STC-TP | onsemi |
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC Packaging: Tape & Reel (TR) Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 2.5V ~ 3.1V Pixel Size: 3.6µm x 3.6µm Active Pixel Array: 1280H x 1024V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 15 |
Produkt ist nicht verfügbar |
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MT9M131C12STC-TR | onsemi |
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC Packaging: Tape & Reel (TR) Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 2.5V ~ 3.1V Pixel Size: 3.6µm x 3.6µm Active Pixel Array: 1280H x 1024V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 15 |
Produkt ist nicht verfügbar |
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MT9M032C12STC-DP | onsemi |
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC Packaging: Tray |
Produkt ist nicht verfügbar |
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MT9M032C12STC-DR | onsemi |
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC Packaging: Tray |
Produkt ist nicht verfügbar |
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MT9M032C12STMU-DP | onsemi |
Description: SENSOR IMAGE 1.6MP MONO 48LCC Packaging: Tray |
Produkt ist nicht verfügbar |
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MT9M032C12STMU-DR | onsemi |
Description: SENSOR IMAGE 1.6MP MONO 48LCC Packaging: Tray |
Produkt ist nicht verfügbar |
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MT9V024IA7XTC-DP | onsemi | Description: SENSOR IMAGE VGA COLOR 52IBGA |
Produkt ist nicht verfügbar |
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MT9V024IA7XTM-DP | onsemi | Description: SENSOR IMAGE VGA MONO 52-IBGA |
Produkt ist nicht verfügbar |
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MT9V024IA7XTM-DR | onsemi | Description: SENSOR IMAGE VGA MONO 52-IBGA |
Produkt ist nicht verfügbar |
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MT9V024IA7XTM-TP | onsemi | Description: SENSOR IMAGE VGA MONO 52-IBGA |
Produkt ist nicht verfügbar |
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MT9V024IA7XTM-TR | onsemi | Description: SENSOR IMAGE VGA MONO 52-IBGA |
Produkt ist nicht verfügbar |
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MT9V034C12STM-DP | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60 |
auf Bestellung 4764 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9V034C12STM-DR | onsemi | Description: SENSOR IMAGE VGA MONO 48-CLCC |
Produkt ist nicht verfügbar |
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MT9V034C12STM-DR1 | onsemi |
Description: SENSOR IMAGE VGA MONO 48-CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60 |
auf Bestellung 456 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9V034C12STM-TP | onsemi | Description: SENSOR IMAGE VGA MONO 48-CLCC |
Produkt ist nicht verfügbar |
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MT9V034C12STM-TR | onsemi | Description: SENSOR IMAGE VGA MONO 48-CLCC |
Produkt ist nicht verfügbar |
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AR0130CSSC00SPBA0-DR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Tray Package / Case: 48-LCC Type: CMOS Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.8V ~ 2.8V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-PLCC (11.43x11.43) Grade: Automotive Frames per Second: 45 Qualification: AEC-Q100 |
auf Bestellung 1108 Stücke: Lieferzeit 10-14 Tag (e) |
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AR0134CSSC00SPCA0-DRBR | onsemi |
Description: IMAGE SENSOR RGB CMOS Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Last Time Buy Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSC00SPCA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Last Time Buy Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSC00SPCA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSC00SUEA0-DPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSC00SUEA0-DRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSC00SUEA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSM00SPCA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSM00SPCA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 48-ILCC (10x10) Part Status: Obsolete Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSM00SUEA0-TPBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Last Time Buy Frames per Second: 54 |
Produkt ist nicht verfügbar |
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AR0134CSSM00SUEA0-TRBR | onsemi |
Description: IMAGE SENSOR MONO CMOS Packaging: Tape & Reel (TR) Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TA) Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 54 |
Produkt ist nicht verfügbar |
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MT9J003I12STMU-DP | onsemi |
Description: SNSR IMAGE DGTL HISPI 48-LCC Packaging: Tray Package / Case: 48-LCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C (TJ) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 1.67µm x 1.67µm Active Pixel Array: 3856H x 2764V Supplier Device Package: 48-ILCC (10x10) Part Status: Active Frames per Second: 30 |
auf Bestellung 12000 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9M024IA3XTM-DRBR | onsemi |
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 1.7V ~ 1.95V Pixel Size: 3.75µm x 3.75µm Active Pixel Array: 1280H x 960V Supplier Device Package: 63-IBGA (9x9) Part Status: Obsolete Frames per Second: 45 |
Produkt ist nicht verfügbar |
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MT9V034C12STC-DR | onsemi |
Description: SENSOR IMAGE VGA COLOR 48CLCC Packaging: Tray Package / Case: 48-CLCC Type: CMOS with Processor Operating Temperature: -30°C ~ 70°C Voltage - Supply: 3V ~ 3.6V Pixel Size: 6µm x 6µm Active Pixel Array: 752H x 480V Supplier Device Package: 48-CLCC (11.43x11.43) Frames per Second: 60 |
auf Bestellung 1365 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9V126IA3XTC-DR | onsemi |
Description: SENSOR IMAGE VGA SOC 9X9BGA Packaging: Tray Package / Case: 63-LBGA Type: CMOS Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 5.6µm x 5.6µm Supplier Device Package: 63-IBGA (9x9) Frames per Second: 60 |
auf Bestellung 2600 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9V128IA3XTC-DR | onsemi |
Description: SENSOR IMAGE Packaging: Tray Package / Case: 63-LBGA Type: CMOS with Processor Operating Temperature: -40°C ~ 105°C (TA) Voltage - Supply: 1.7V ~ 1.9V Pixel Size: 5.6µm x 5.6µm Active Pixel Array: 680H x 512V Supplier Device Package: 63-IBGA (9x9) Part Status: Not For New Designs Frames per Second: 60 |
auf Bestellung 73 Stücke: Lieferzeit 10-14 Tag (e) |
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MT9V138C12STC-DR | onsemi |
Description: SENSOR IMAGE Packaging: Tray |
Produkt ist nicht verfügbar |
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FDD86369-F085 | onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Tape & Reel (TR) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 16000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDD86369-F085 | onsemi |
Description: MOSFET N-CH 80V 90A DPAK Packaging: Cut Tape (CT) Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 90A (Tc) Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V Power Dissipation (Max): 150W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: TO-252AA Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 4185 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL86563-F085 | onsemi |
Description: MOSFET N-CH 60V 240A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 17576 Stücke: Lieferzeit 10-14 Tag (e) |
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FGH40T65SH-F155 | onsemi |
Description: IGBT 650V 80A 268W TO-247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A Supplier Device Package: TO-247-3 IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 19.2ns/65.6ns Switching Energy: 1.01mJ (on), 297µJ (off) Test Condition: 400V, 40A, 6Ohm, 15V Gate Charge: 72.2 nC Part Status: Obsolete Current - Collector (Ic) (Max): 80 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 268 W |
Produkt ist nicht verfügbar |
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Tape & Reel (TR) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLP Packaging: Tape & Reel (TR) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
Produkt ist nicht verfügbar |
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FAN73893MX | onsemi |
Description: IC GATE DRVR HALF-BRIDGE 28SOIC Packaging: Cut Tape (CT) Package / Case: 28-SOIC (0.295", 7.50mm Width) Mounting Type: Surface Mount Operating Temperature: -40°C ~ 150°C (TJ) Voltage - Supply: 10V ~ 20V Input Type: Inverting High Side Voltage - Max (Bootstrap): 600 V Supplier Device Package: 28-SOIC Rise / Fall Time (Typ): 50ns, 30ns Channel Type: 3-Phase Driven Configuration: Half-Bridge Number of Drivers: 6 Gate Type: IGBT, N-Channel MOSFET Logic Voltage - VIL, VIH: 0.8V, 2.5V Current - Peak Output (Source, Sink): 350mA, 650mA Part Status: Active DigiKey Programmable: Not Verified |
auf Bestellung 1848 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN8841MPX | onsemi |
Description: IC HALF BRIDGE DRIVER 24MLP Packaging: Cut Tape (CT) Package / Case: 24-WFQFN Exposed Pad Mounting Type: Surface Mount Interface: Logic Operating Temperature: -55°C ~ 150°C (TJ) Output Configuration: Half Bridge (2) Voltage - Supply: 2.7V ~ 5.5V Applications: DC-DC Converters Technology: Power MOSFET Voltage - Load: 13V ~ 60V Supplier Device Package: 24-MLP (4x4) Fault Protection: ESD, Over Voltage, UVLO Load Type: Inductive Part Status: Active |
auf Bestellung 120 Stücke: Lieferzeit 10-14 Tag (e) |
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CPH3455-TL-W | onsemi | Description: MOSFET N-CH 35V 3A 3CPH |
Produkt ist nicht verfügbar |
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FS8G | onsemi |
Description: DIODE GEN PURP 400V 8A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FS8M | onsemi |
Description: DIODE GEN PURP 1KV 8A TO277-3 Packaging: Tape & Reel (TR) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 4000 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8G | onsemi |
Description: DIODE GEN PURP 400V 8A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Active Voltage - DC Reverse (Vr) (Max): 400 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 400 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8J | onsemi | Description: DIODE GEN PURP 600V 8A TO277-3 |
auf Bestellung 1649 Stücke: Lieferzeit 10-14 Tag (e) |
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FS8K | onsemi |
Description: DIODE GEN PURP 800V 8A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 800 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 800 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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FS8M | onsemi |
Description: DIODE GEN PURP 1KV 8A TO277-3 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Standard Recovery >500ns, > 200mA (Io) Reverse Recovery Time (trr): 3.37 µs Technology: Standard Capacitance @ Vr, F: 118pF @ 0V, 1MHz Current - Average Rectified (Io): 8A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 1000 V Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A Current - Reverse Leakage @ Vr: 5 µA @ 1000 V Qualification: AEC-Q101 |
auf Bestellung 10508 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
Produkt ist nicht verfügbar |
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FDMT800120DC | onsemi |
Description: MOSFET N-CH 120V 20A 8DLCOOL88 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc) Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V |
auf Bestellung 2813 Stücke: Lieferzeit 10-14 Tag (e) |
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NB3W800LMNG | onsemi |
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN Packaging: Tray Package / Case: 48-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL Frequency - Max: 133.33MHz Input: Clock Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:8 Differential - Input:Output: Yes/Yes Supplier Device Package: 48-QFN (6x6) PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
auf Bestellung 7840 Stücke: Lieferzeit 10-14 Tag (e) |
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NBA3N200SDG | onsemi | Description: IC TRANSCEIVER HALF 1/1 8SOIC |
Produkt ist nicht verfügbar |
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NBA3N201SDG | onsemi |
Description: IC TRANSCEIVER HALF 1/1 8SOIC Packaging: Tube Package / Case: 8-SOIC (0.154", 3.90mm Width) Mounting Type: Surface Mount Type: Transceiver Operating Temperature: -40°C ~ 125°C Voltage - Supply: 3V ~ 3.6V Number of Drivers/Receivers: 1/1 Data Rate: 200Mbps Protocol: LVDS, Multipoint Supplier Device Package: 8-SOIC Receiver Hysteresis: 25 mV Duplex: Half Part Status: Obsolete |
Produkt ist nicht verfügbar |
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NBA3N206SDG | onsemi | Description: IC TRANSCEIVER HALF 1/1 8SOIC |
auf Bestellung 21490 Stücke: Lieferzeit 10-14 Tag (e) |
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NGTG35N65FL2WG | onsemi |
Description: IGBT FIELD STOP 650V 70A TO247-3 Packaging: Tube Package / Case: TO-247-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A Supplier Device Package: TO-247-3 IGBT Type: Field Stop Td (on/off) @ 25°C: 72ns/132ns Switching Energy: 840µJ (on), 280µJ (off) Test Condition: 400V, 35A, 10Ohm, 15V Gate Charge: 125 nC Current - Collector (Ic) (Max): 70 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 120 A Power - Max: 300 W |
auf Bestellung 42 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD5004MXTBG | onsemi |
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN Packaging: Tape & Reel (TR) Package / Case: 4-XFDFN Exposed Pad Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 3.5pF @ 1MHz Voltage - Reverse Standoff (Typ): 3.3V (Max) Supplier Device Package: 4-X3DFN (0.53x0.93) Unidirectional Channels: 4 Voltage - Breakdown (Min): 3.9V Voltage - Clamping (Max) @ Ipp: 9.1V Power Line Protection: No Part Status: Active |
Produkt ist nicht verfügbar |
MT9V032C12STM-TP |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO CMOS 48LCC
Packaging: Tape & Reel (TR)
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
Description: SENSOR IMAGE VGA MONO CMOS 48LCC
Packaging: Tape & Reel (TR)
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
Produkt ist nicht verfügbar
MT9M131C12STC-DP |
Hersteller: onsemi
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.1V
Pixel Size: 3.6µm x 3.6µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 15
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.1V
Pixel Size: 3.6µm x 3.6µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 15
Produkt ist nicht verfügbar
MT9M131C12STC-TP |
Hersteller: onsemi
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.1V
Pixel Size: 3.6µm x 3.6µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 15
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.1V
Pixel Size: 3.6µm x 3.6µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 15
Produkt ist nicht verfügbar
MT9M131C12STC-TR |
Hersteller: onsemi
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.1V
Pixel Size: 3.6µm x 3.6µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 15
Description: SENSOR IMAGE 1.3MP CMOS 48-CLCC
Packaging: Tape & Reel (TR)
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 2.5V ~ 3.1V
Pixel Size: 3.6µm x 3.6µm
Active Pixel Array: 1280H x 1024V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 15
Produkt ist nicht verfügbar
MT9M032C12STC-DP |
Produkt ist nicht verfügbar
MT9M032C12STC-DR |
Produkt ist nicht verfügbar
MT9M032C12STMU-DP |
Produkt ist nicht verfügbar
MT9M032C12STMU-DR |
Produkt ist nicht verfügbar
MT9V024IA7XTC-DP |
Hersteller: onsemi
Description: SENSOR IMAGE VGA COLOR 52IBGA
Description: SENSOR IMAGE VGA COLOR 52IBGA
Produkt ist nicht verfügbar
MT9V024IA7XTM-DP |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 52-IBGA
Description: SENSOR IMAGE VGA MONO 52-IBGA
Produkt ist nicht verfügbar
MT9V024IA7XTM-DR |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 52-IBGA
Description: SENSOR IMAGE VGA MONO 52-IBGA
Produkt ist nicht verfügbar
MT9V024IA7XTM-TP |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 52-IBGA
Description: SENSOR IMAGE VGA MONO 52-IBGA
Produkt ist nicht verfügbar
MT9V024IA7XTM-TR |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 52-IBGA
Description: SENSOR IMAGE VGA MONO 52-IBGA
Produkt ist nicht verfügbar
MT9V034C12STM-DP |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
auf Bestellung 4764 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 37.61 EUR |
10+ | 29.77 EUR |
25+ | 28.21 EUR |
80+ | 24.29 EUR |
440+ | 22.72 EUR |
MT9V034C12STM-DR |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Description: SENSOR IMAGE VGA MONO 48-CLCC
Produkt ist nicht verfügbar
MT9V034C12STM-DR1 |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
Description: SENSOR IMAGE VGA MONO 48-CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
auf Bestellung 456 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 37.88 EUR |
10+ | 31.55 EUR |
25+ | 27.95 EUR |
152+ | 27.05 EUR |
456+ | 25.24 EUR |
MT9V034C12STM-TP |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Description: SENSOR IMAGE VGA MONO 48-CLCC
Produkt ist nicht verfügbar
MT9V034C12STM-TR |
Hersteller: onsemi
Description: SENSOR IMAGE VGA MONO 48-CLCC
Description: SENSOR IMAGE VGA MONO 48-CLCC
Produkt ist nicht verfügbar
AR0130CSSC00SPBA0-DR |
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.8V ~ 2.8V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-PLCC (11.43x11.43)
Grade: Automotive
Frames per Second: 45
Qualification: AEC-Q100
auf Bestellung 1108 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 17.72 EUR |
10+ | 14.18 EUR |
25+ | 13.12 EUR |
80+ | 11.35 EUR |
440+ | 10.64 EUR |
AR0134CSSC00SPCA0-DRBR |
Hersteller: onsemi
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR RGB CMOS
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSC00SPCA0-TPBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Last Time Buy
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSC00SPCA0-TRBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSC00SUEA0-DPBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSC00SUEA0-DRBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSC00SUEA0-TRBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSM00SPCA0-TPBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSM00SPCA0-TRBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Obsolete
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSM00SUEA0-TPBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Last Time Buy
Frames per Second: 54
Produkt ist nicht verfügbar
AR0134CSSM00SUEA0-TRBR |
Hersteller: onsemi
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Description: IMAGE SENSOR MONO CMOS
Packaging: Tape & Reel (TR)
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TA)
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 54
Produkt ist nicht verfügbar
MT9J003I12STMU-DP |
Hersteller: onsemi
Description: SNSR IMAGE DGTL HISPI 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.67µm x 1.67µm
Active Pixel Array: 3856H x 2764V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Active
Frames per Second: 30
Description: SNSR IMAGE DGTL HISPI 48-LCC
Packaging: Tray
Package / Case: 48-LCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C (TJ)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 1.67µm x 1.67µm
Active Pixel Array: 3856H x 2764V
Supplier Device Package: 48-ILCC (10x10)
Part Status: Active
Frames per Second: 30
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 64.43 EUR |
10+ | 53.7 EUR |
25+ | 47.56 EUR |
80+ | 46.03 EUR |
MT9M024IA3XTM-DRBR |
Hersteller: onsemi
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 45
Description: SENSOR IMAGE 1.6MP CMOS 48-LCC
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 1.7V ~ 1.95V
Pixel Size: 3.75µm x 3.75µm
Active Pixel Array: 1280H x 960V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Obsolete
Frames per Second: 45
Produkt ist nicht verfügbar
MT9V034C12STC-DR |
Hersteller: onsemi
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
Description: SENSOR IMAGE VGA COLOR 48CLCC
Packaging: Tray
Package / Case: 48-CLCC
Type: CMOS with Processor
Operating Temperature: -30°C ~ 70°C
Voltage - Supply: 3V ~ 3.6V
Pixel Size: 6µm x 6µm
Active Pixel Array: 752H x 480V
Supplier Device Package: 48-CLCC (11.43x11.43)
Frames per Second: 60
auf Bestellung 1365 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 36.06 EUR |
10+ | 28.55 EUR |
25+ | 27.05 EUR |
152+ | 23.29 EUR |
456+ | 21.79 EUR |
MT9V126IA3XTC-DR |
Hersteller: onsemi
Description: SENSOR IMAGE VGA SOC 9X9BGA
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60
Description: SENSOR IMAGE VGA SOC 9X9BGA
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Supplier Device Package: 63-IBGA (9x9)
Frames per Second: 60
auf Bestellung 2600 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2600+ | 22.35 EUR |
MT9V128IA3XTC-DR |
Hersteller: onsemi
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 680H x 512V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Not For New Designs
Frames per Second: 60
Description: SENSOR IMAGE
Packaging: Tray
Package / Case: 63-LBGA
Type: CMOS with Processor
Operating Temperature: -40°C ~ 105°C (TA)
Voltage - Supply: 1.7V ~ 1.9V
Pixel Size: 5.6µm x 5.6µm
Active Pixel Array: 680H x 512V
Supplier Device Package: 63-IBGA (9x9)
Part Status: Not For New Designs
Frames per Second: 60
auf Bestellung 73 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1+ | 39.04 EUR |
10+ | 32.53 EUR |
25+ | 28.82 EUR |
MT9V138C12STC-DR |
Produkt ist nicht verfügbar
FDD86369-F085 |
Hersteller: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2500+ | 0.99 EUR |
FDBL86563-F085 |
Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 16000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2000+ | 3.96 EUR |
FDD86369-F085 |
Hersteller: onsemi
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 90A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 90A (Tc)
Rds On (Max) @ Id, Vgs: 7.9mOhm @ 80A, 10V
Power Dissipation (Max): 150W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: TO-252AA
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 54 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2530 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4185 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
8+ | 2.38 EUR |
10+ | 1.95 EUR |
100+ | 1.52 EUR |
500+ | 1.29 EUR |
1000+ | 1.05 EUR |
FDBL86563-F085 |
Hersteller: onsemi
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 60V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 1.5mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 169 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10300 pF @ 30 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 17576 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 8.13 EUR |
10+ | 6.84 EUR |
100+ | 5.53 EUR |
500+ | 4.92 EUR |
1000+ | 4.21 EUR |
FGH40T65SH-F155 |
Hersteller: onsemi
Description: IGBT 650V 80A 268W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Description: IGBT 650V 80A 268W TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
Produkt ist nicht verfügbar
FAN73893MX |
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Tape & Reel (TR)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
1000+ | 2.92 EUR |
FAN8841MPX |
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Tape & Reel (TR)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Produkt ist nicht verfügbar
FAN73893MX |
Hersteller: onsemi
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
Description: IC GATE DRVR HALF-BRIDGE 28SOIC
Packaging: Cut Tape (CT)
Package / Case: 28-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 150°C (TJ)
Voltage - Supply: 10V ~ 20V
Input Type: Inverting
High Side Voltage - Max (Bootstrap): 600 V
Supplier Device Package: 28-SOIC
Rise / Fall Time (Typ): 50ns, 30ns
Channel Type: 3-Phase
Driven Configuration: Half-Bridge
Number of Drivers: 6
Gate Type: IGBT, N-Channel MOSFET
Logic Voltage - VIL, VIH: 0.8V, 2.5V
Current - Peak Output (Source, Sink): 350mA, 650mA
Part Status: Active
DigiKey Programmable: Not Verified
auf Bestellung 1848 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
4+ | 5.83 EUR |
10+ | 5.22 EUR |
25+ | 4.93 EUR |
100+ | 4.06 EUR |
250+ | 3.64 EUR |
500+ | 3.51 EUR |
FAN8841MPX |
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
Description: IC HALF BRIDGE DRIVER 24MLP
Packaging: Cut Tape (CT)
Package / Case: 24-WFQFN Exposed Pad
Mounting Type: Surface Mount
Interface: Logic
Operating Temperature: -55°C ~ 150°C (TJ)
Output Configuration: Half Bridge (2)
Voltage - Supply: 2.7V ~ 5.5V
Applications: DC-DC Converters
Technology: Power MOSFET
Voltage - Load: 13V ~ 60V
Supplier Device Package: 24-MLP (4x4)
Fault Protection: ESD, Over Voltage, UVLO
Load Type: Inductive
Part Status: Active
auf Bestellung 120 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.18 EUR |
10+ | 5.55 EUR |
25+ | 5.24 EUR |
100+ | 4.54 EUR |
FS8G |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
5000+ | 0.76 EUR |
FS8K |
Hersteller: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FS8M |
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 4000 Stücke:
Lieferzeit 10-14 Tag (e)FS8G |
Hersteller: onsemi
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE GEN PURP 400V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 400 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.94 EUR |
12+ | 1.58 EUR |
100+ | 1.23 EUR |
500+ | 1.04 EUR |
1000+ | 0.85 EUR |
2000+ | 0.8 EUR |
FS8J |
Hersteller: onsemi
Description: DIODE GEN PURP 600V 8A TO277-3
Description: DIODE GEN PURP 600V 8A TO277-3
auf Bestellung 1649 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
11+ | 1.72 EUR |
12+ | 1.55 EUR |
100+ | 1.21 EUR |
500+ | 1 EUR |
1000+ | 0.79 EUR |
FS8K |
Hersteller: onsemi
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 800V 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 800 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 800 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
FS8M |
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
Description: DIODE GEN PURP 1KV 8A TO277-3
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Standard Recovery >500ns, > 200mA (Io)
Reverse Recovery Time (trr): 3.37 µs
Technology: Standard
Capacitance @ Vr, F: 118pF @ 0V, 1MHz
Current - Average Rectified (Io): 8A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 8 A
Current - Reverse Leakage @ Vr: 5 µA @ 1000 V
Qualification: AEC-Q101
auf Bestellung 10508 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
10+ | 1.9 EUR |
12+ | 1.56 EUR |
100+ | 1.21 EUR |
500+ | 1.03 EUR |
1000+ | 0.84 EUR |
2000+ | 0.79 EUR |
FDMT800120DC |
Hersteller: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Produkt ist nicht verfügbar
FDMT800120DC |
Hersteller: onsemi
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
Description: MOSFET N-CH 120V 20A 8DLCOOL88
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 20A (Ta), 129A (Tc)
Rds On (Max) @ Id, Vgs: 4.14mOhm @ 20A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 107 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 7850 pF @ 60 V
auf Bestellung 2813 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 10.6 EUR |
10+ | 9.07 EUR |
100+ | 7.56 EUR |
500+ | 6.67 EUR |
1000+ | 6.01 EUR |
NB3W800LMNG |
Hersteller: onsemi
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 133.33MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (6x6)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK ZDB FANOUT BUFFER 48QFN
Packaging: Tray
Package / Case: 48-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 133.33MHz
Input: Clock
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:8
Differential - Input:Output: Yes/Yes
Supplier Device Package: 48-QFN (6x6)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
auf Bestellung 7840 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
2+ | 12.32 EUR |
10+ | 11.14 EUR |
25+ | 10.62 EUR |
80+ | 9.22 EUR |
230+ | 8.81 EUR |
490+ | 8.03 EUR |
980+ | 6.99 EUR |
NBA3N200SDG |
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Produkt ist nicht verfügbar
NBA3N201SDG |
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 200Mbps
Protocol: LVDS, Multipoint
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 25 mV
Duplex: Half
Part Status: Obsolete
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Packaging: Tube
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Type: Transceiver
Operating Temperature: -40°C ~ 125°C
Voltage - Supply: 3V ~ 3.6V
Number of Drivers/Receivers: 1/1
Data Rate: 200Mbps
Protocol: LVDS, Multipoint
Supplier Device Package: 8-SOIC
Receiver Hysteresis: 25 mV
Duplex: Half
Part Status: Obsolete
Produkt ist nicht verfügbar
NBA3N206SDG |
Hersteller: onsemi
Description: IC TRANSCEIVER HALF 1/1 8SOIC
Description: IC TRANSCEIVER HALF 1/1 8SOIC
auf Bestellung 21490 Stücke:
Lieferzeit 10-14 Tag (e)NGTG35N65FL2WG |
Hersteller: onsemi
Description: IGBT FIELD STOP 650V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
Description: IGBT FIELD STOP 650V 70A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Vce(on) (Max) @ Vge, Ic: 2V @ 15V, 35A
Supplier Device Package: TO-247-3
IGBT Type: Field Stop
Td (on/off) @ 25°C: 72ns/132ns
Switching Energy: 840µJ (on), 280µJ (off)
Test Condition: 400V, 35A, 10Ohm, 15V
Gate Charge: 125 nC
Current - Collector (Ic) (Max): 70 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 300 W
auf Bestellung 42 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis ohne MwSt |
---|---|
3+ | 6.09 EUR |
30+ | 4.83 EUR |
ESD5004MXTBG |
Hersteller: onsemi
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 4-X3DFN (0.53x0.93)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 3.9V
Voltage - Clamping (Max) @ Ipp: 9.1V
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 3.3VWM 9.1VC 4X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XFDFN Exposed Pad
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 3.5pF @ 1MHz
Voltage - Reverse Standoff (Typ): 3.3V (Max)
Supplier Device Package: 4-X3DFN (0.53x0.93)
Unidirectional Channels: 4
Voltage - Breakdown (Min): 3.9V
Voltage - Clamping (Max) @ Ipp: 9.1V
Power Line Protection: No
Part Status: Active
Produkt ist nicht verfügbar