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NSIC2020JBT3G NSIC2020JBT3G onsemi nsic2020jb-d.pdf Description: IC CURRENT REGULATOR SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 20mA
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Part Status: Active
auf Bestellung 42500 Stücke:
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2500+0.43 EUR
5000+0.4 EUR
7500+0.38 EUR
12500+0.36 EUR
17500+0.35 EUR
Mindestbestellmenge: 2500
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FODM121V FODM121V onsemi ONSM-S-A0003161728-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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1000+0.48 EUR
3000+0.44 EUR
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6N135SVM 6N135SVM onsemi hcpl2530m-d.pdf Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 230ns, 450ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
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RHRG3060-F085 RHRG3060-F085 onsemi rhrg3060_f085-d.pdf Description: DIODE AVALANCHE 600V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 28905 Stücke:
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RHRG5060-F085 RHRG5060-F085 onsemi rhrg5060_f085-d.pdf Description: DIODE AVALANCHE 600V 50A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Qualification: AEC-Q101
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120+5.61 EUR
510+5.04 EUR
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2N7002L 2N7002L onsemi 2n7002l_fcs-d.pdf Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
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6000+0.043 EUR
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BSS138L BSS138L onsemi bss138l-d.pdf Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 132000 Stücke:
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9000+0.051 EUR
15000+0.05 EUR
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FCD850N80Z FCD850N80Z onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
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FDMA86151L FDMA86151L onsemi fdma86151l-d.pdf Description: MOSFET N-CH 100V 3.3A 6MICROFET
Produkt ist nicht verfügbar
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FDMA86265P FDMA86265P onsemi fdma86265p-d.pdf Description: MOSFET P-CH 150V 1A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
auf Bestellung 12000 Stücke:
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6000+0.64 EUR
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FDMD82100L FDMD82100L onsemi FDMD82100L-D.pdf Description: MOSFET 2N-CH 100V 7A 6-MLP
Produkt ist nicht verfügbar
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FOD8333R2V FOD8333R2V onsemi fod8333-d.pdf Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 3V ~ 15V
Produkt ist nicht verfügbar
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2N7002L 2N7002L onsemi 2n7002l_fcs-d.pdf Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 291785 Stücke:
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56+0.32 EUR
115+0.15 EUR
200+0.088 EUR
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BSS138L BSS138L onsemi bss138l-d.pdf Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 133803 Stücke:
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67+0.26 EUR
94+0.19 EUR
149+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
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FCD850N80Z FCD850N80Z onsemi fcu850n80z-d.pdf Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 65888 Stücke:
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100+2.3 EUR
500+1.87 EUR
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FDMA86151L FDMA86151L onsemi fdma86151l-d.pdf Description: MOSFET N-CH 100V 3.3A 6MICROFET
auf Bestellung 3001 Stücke:
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9+2.15 EUR
10+1.91 EUR
100+1.49 EUR
500+1.23 EUR
1000+0.97 EUR
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FDMA86265P FDMA86265P onsemi fdma86265p-d.pdf Description: MOSFET P-CH 150V 1A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
auf Bestellung 13260 Stücke:
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11+1.62 EUR
100+1.08 EUR
500+0.85 EUR
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FDMD82100L FDMD82100L onsemi FDMD82100L-D.pdf Description: MOSFET 2N-CH 100V 7A 6-MLP
auf Bestellung 2525 Stücke:
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10+4.13 EUR
100+3.32 EUR
500+2.72 EUR
1000+2.26 EUR
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FOD8333R2V FOD8333R2V onsemi fod8333-d.pdf Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 3V ~ 15V
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FGH40T100SMD-F155 FGH40T100SMD-F155 onsemi fgh40t100smd-d.pdf Description: IGBT TRENCH FS 1000V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/285ns
Switching Energy: 2.35mJ (on), 1.15mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 398 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 333 W
auf Bestellung 446 Stücke:
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FDMC7200S FDMC7200S onsemi fdmc7200s-d.pdf Description: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12000 Stücke:
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6000+0.53 EUR
9000+0.51 EUR
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FDMS0300S FDMS0300S onsemi fdms0300s-d.pdf Description: MOSFET N-CH 30V 31A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
Produkt ist nicht verfügbar
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FDMS0306AS FDMS0306AS onsemi fdms0306as-d.pdf Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
auf Bestellung 9000 Stücke:
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3000+0.89 EUR
6000+0.86 EUR
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FDMS0308AS FDMS0308AS onsemi fdms0308as-d.pdf Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 3000 Stücke:
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3000+0.55 EUR
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FDMS0310AS FDMS0310AS onsemi fdms0310as-d.pdf Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
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FDMS0312AS FDMS0312AS onsemi FAIR-S-A0002363693-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
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FDMS3604S FDMS3604S onsemi FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
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FQB8N90CTM FQB8N90CTM onsemi fqb8n90ctm-d.pdf Description: MOSFET N-CH 900V 6.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Produkt ist nicht verfügbar
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FSA2567UMX-F135 FSA2567UMX-F135 onsemi FSA2567.pdf Description: IC SWITCH 4PDT 16UMLP
Packaging: Tape & Reel (TR)
Features: Break-Before-Make
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 475MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: 4PDT
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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FXMAR2102UMX-F106 FXMAR2102UMX-F106 onsemi fxmar2102-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UMLP
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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FDMC7200S FDMC7200S onsemi fdmc7200s-d.pdf Description: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
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FDMS0300S FDMS0300S onsemi fdms0300s-d.pdf Description: MOSFET N-CH 30V 31A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
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FDMS0306AS FDMS0306AS onsemi fdms0306as-d.pdf Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
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FDMS0308AS FDMS0308AS onsemi fdms0308as-d.pdf Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
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FDMS0310AS FDMS0310AS onsemi fdms0310as-d.pdf Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
auf Bestellung 14997 Stücke:
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FDMS0312AS FDMS0312AS onsemi FAIR-S-A0002363693-1.pdf?t.download=true&u=5oefqw Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
auf Bestellung 331818 Stücke:
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FDMS3604S FDMS3604S onsemi FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
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FQB8N90CTM FQB8N90CTM onsemi fqb8n90ctm-d.pdf Description: MOSFET N-CH 900V 6.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Produkt ist nicht verfügbar
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FXMAR2102UMX-F106 FXMAR2102UMX-F106 onsemi fxmar2102-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 8UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
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FQB9P25TM FQB9P25TM onsemi fqb9p25-d.pdf Description: MOSFET P-CH 250V 9.4A D2PAK
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HMHAA280R2V HMHAA280R2V onsemi hmhaa280-d.pdf Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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MOC3081SR2VM MOC3081SR2VM onsemi moc3083m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
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MOC3163SR2VM MOC3163SR2VM onsemi moc3163m-d.pdf Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
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FOD4108SD FOD4108SD onsemi fod4118-d.pdf Description: OPTOISOLATOR 5KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
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FODM121CR2V FODM121CR2V onsemi ONSM-S-A0003161728-1.pdf?t.download=true&u=5oefqw Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
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IRLM220ATF IRLM220ATF onsemi irlm220a-d.pdf Description: MOSFET N-CH 200V 1.13A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 5V
Power Dissipation (Max): 2W (Tc)
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
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MMBT4403-D87Z MMBT4403-D87Z onsemi DS_261_MMBT4403.pdf Description: TRANS PNP 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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FL7734MX FL7734MX onsemi FAIR-S-A0002366313-1.pdf?t.download=true&u=5oefqw Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
auf Bestellung 5000 Stücke:
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2500+1.14 EUR
5000+1.08 EUR
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FL7734MX FL7734MX onsemi FAIR-S-A0002366313-1.pdf?t.download=true&u=5oefqw Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
auf Bestellung 7460 Stücke:
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250+1.44 EUR
500+1.33 EUR
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KAI-1010-ABA-CD-BA KAI-1010-ABA-CD-BA onsemi KAI-1010.pdf Description: INTERLINE CCD IMAGE SENSOR
Packaging: Bag
Package / Case: 24-DIP Module
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 12V ~ 15V
Pixel Size: 9µm x 9µm
Active Pixel Array: 1008H x 1018V
Supplier Device Package: 24-DIP
Frames per Second: 30
Produkt ist nicht verfügbar
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FGA40T65SHD FGA40T65SHD onsemi fga40t65shd-d.pdf Description: IGBT TRENCH FS 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
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FGA50T65SHD FGA50T65SHD onsemi fga50t65shd-d.pdf Description: IGBT TRENCH FS 650V 100A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
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FGA6540WDF FGA6540WDF onsemi fga6540wdf-d.pdf Description: IGBT TRENCH FS 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/54.4ns
Switching Energy: 1.37mJ (on), 250µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 55.5 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 238 W
Produkt ist nicht verfügbar
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FNA22512A FNA22512A onsemi fna22512a-d.pdf Description: MODULE SPM 1.2KV 25A 34PWRDIP
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
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FNA23512A FNA23512A onsemi fna23512a-d.pdf Description: MODULE SPM 1.2V 35A 34PWRDIP
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 35 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
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FODM8801CV FODM8801CV onsemi fodm8801a-d.pdf Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 5364 Stücke:
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FAN6604MRMX FAN6604MRMX onsemi fan6604-d.pdf Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 82.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Produkt ist nicht verfügbar
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FCD2250N80Z FCD2250N80Z onsemi fcd2250n80z-d.pdf Description: MOSFET N-CH 800V 2.6A DPAK
Produkt ist nicht verfügbar
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FDMC8321LDC FDMC8321LDC onsemi fdmc8321ldc-d.pdf Description: MOSFET N-CH 40V 27A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
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FODM8801CR2V FODM8801CR2V onsemi fodm8801a-d.pdf Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 120000 Stücke:
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NSIC2020JBT3G nsic2020jb-d.pdf
NSIC2020JBT3G
Hersteller: onsemi
Description: IC CURRENT REGULATOR SMB
Packaging: Tape & Reel (TR)
Package / Case: DO-214AA, SMB
Sensing Method: High/Low-Side
Mounting Type: Surface Mount
Function: Current Regulator
Voltage - Input: 120V
Current - Output: 20mA
Operating Temperature: -55°C ~ 175°C
Supplier Device Package: SMB
Part Status: Active
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2500+0.43 EUR
5000+0.4 EUR
7500+0.38 EUR
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FODM121V ONSM-S-A0003161728-1.pdf?t.download=true&u=5oefqw
FODM121V
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Box
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 3000 Stücke:
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13+1.41 EUR
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100+0.6 EUR
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6N135SVM hcpl2530m-d.pdf
6N135SVM
Hersteller: onsemi
Description: OPTOISO 5KV TRANS W/BASE 8-SMD
Packaging: Tube
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor with Base
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 7% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 230ns, 450ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 1937 Stücke:
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6+3.12 EUR
50+1.83 EUR
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500+1.47 EUR
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RHRG3060-F085 rhrg3060_f085-d.pdf
RHRG3060-F085
Hersteller: onsemi
Description: DIODE AVALANCHE 600V 30A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 45 ns
Technology: Avalanche
Current - Average Rectified (Io): 30A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 30 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Qualification: AEC-Q101
auf Bestellung 28905 Stücke:
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4+5.81 EUR
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510+2.59 EUR
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RHRG5060-F085 rhrg5060_f085-d.pdf
RHRG5060-F085
Hersteller: onsemi
Description: DIODE AVALANCHE 600V 50A TO2472
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 60 ns
Technology: Avalanche
Current - Average Rectified (Io): 50A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.1 V @ 50 A
Current - Reverse Leakage @ Vr: 250 µA @ 600 V
Qualification: AEC-Q101
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2+10.24 EUR
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120+5.61 EUR
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2N7002L 2n7002l_fcs-d.pdf
2N7002L
Hersteller: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 291000 Stücke:
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3000+0.044 EUR
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9000+0.041 EUR
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BSS138L bss138l-d.pdf
BSS138L
Hersteller: onsemi
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 132000 Stücke:
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3000+0.054 EUR
6000+0.052 EUR
9000+0.051 EUR
15000+0.05 EUR
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FCD850N80Z fcu850n80z-d.pdf
FCD850N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Tape & Reel (TR)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
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2500+1.64 EUR
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FDMA86151L fdma86151l-d.pdf
FDMA86151L
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.3A 6MICROFET
Produkt ist nicht verfügbar
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FDMA86265P fdma86265p-d.pdf
FDMA86265P
Hersteller: onsemi
Description: MOSFET P-CH 150V 1A 6MICROFET
Packaging: Tape & Reel (TR)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
auf Bestellung 12000 Stücke:
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Anzahl Preis
3000+0.69 EUR
6000+0.64 EUR
9000+0.62 EUR
Mindestbestellmenge: 3000
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FDMD82100L FDMD82100L-D.pdf
FDMD82100L
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 7A 6-MLP
Produkt ist nicht verfügbar
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FOD8333R2V fod8333-d.pdf
FOD8333R2V
Hersteller: onsemi
Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 3V ~ 15V
Produkt ist nicht verfügbar
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2N7002L 2n7002l_fcs-d.pdf
2N7002L
Hersteller: onsemi
Description: MOSFET N-CH 60V 115MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 115mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 500mA, 10V
Power Dissipation (Max): 200mW (Ta)
Vgs(th) (Max) @ Id: 2.5V @ 250µA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 291785 Stücke:
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Anzahl Preis
56+0.32 EUR
115+0.15 EUR
200+0.088 EUR
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BSS138L bss138l-d.pdf
BSS138L
Hersteller: onsemi
Description: MOSFET N-CH 50V 200MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 200mA (Ta)
Rds On (Max) @ Id, Vgs: 3.5Ohm @ 200mA, 5V
Power Dissipation (Max): 350mW (Ta)
Vgs(th) (Max) @ Id: 1.5V @ 1mA
Supplier Device Package: SOT-23-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 2.75V, 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 2.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 50 pF @ 25 V
auf Bestellung 133803 Stücke:
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Anzahl Preis
67+0.26 EUR
94+0.19 EUR
149+0.12 EUR
500+0.11 EUR
1000+0.1 EUR
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FCD850N80Z fcu850n80z-d.pdf
FCD850N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 6A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Tc)
Rds On (Max) @ Id, Vgs: 850mOhm @ 3A, 10V
Power Dissipation (Max): 75W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 600µA
Supplier Device Package: TO-252AA
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 800 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1315 pF @ 100 V
auf Bestellung 65888 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.1 EUR
10+3.32 EUR
100+2.3 EUR
500+1.87 EUR
1000+1.73 EUR
Mindestbestellmenge: 4
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FDMA86151L fdma86151l-d.pdf
FDMA86151L
Hersteller: onsemi
Description: MOSFET N-CH 100V 3.3A 6MICROFET
auf Bestellung 3001 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.15 EUR
10+1.91 EUR
100+1.49 EUR
500+1.23 EUR
1000+0.97 EUR
Mindestbestellmenge: 9
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FDMA86265P fdma86265p-d.pdf
FDMA86265P
Hersteller: onsemi
Description: MOSFET P-CH 150V 1A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-WDFN Exposed Pad
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
Rds On (Max) @ Id, Vgs: 1.2Ohm @ 1A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 210 pF @ 75 V
auf Bestellung 13260 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.55 EUR
11+1.62 EUR
100+1.08 EUR
500+0.85 EUR
1000+0.78 EUR
Mindestbestellmenge: 7
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FDMD82100L FDMD82100L-D.pdf
FDMD82100L
Hersteller: onsemi
Description: MOSFET 2N-CH 100V 7A 6-MLP
auf Bestellung 2525 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+4.58 EUR
10+4.13 EUR
100+3.32 EUR
500+2.72 EUR
1000+2.26 EUR
Mindestbestellmenge: 4
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FOD8333R2V fod8333-d.pdf
FOD8333R2V
Hersteller: onsemi
Description: OPTOISO 4.243KV GATE DRIVER 16SO
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Current - Peak Output: 3A
Technology: Optical Coupling
Current - Output High, Low: 2.5A, 2.5A
Voltage - Isolation: 4243Vrms
Approval Agency: IEC/EN/DIN, UL
Supplier Device Package: 16-SO
Rise / Fall Time (Typ): 50ns, 50ns
Common Mode Transient Immunity (Min): 35kV/µs
Propagation Delay tpLH / tpHL (Max): 250ns, 250ns
Pulse Width Distortion (Max): 100ns
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 25 mA
Voltage - Output Supply: 3V ~ 15V
auf Bestellung 4 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+15.98 EUR
Mindestbestellmenge: 2
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FGH40T100SMD-F155 fgh40t100smd-d.pdf
FGH40T100SMD-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 1000V 80A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 78 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 29ns/285ns
Switching Energy: 2.35mJ (on), 1.15mJ (off)
Test Condition: 600V, 40A, 10Ohm, 15V
Gate Charge: 398 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 1000 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 333 W
auf Bestellung 446 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.36 EUR
10+8.39 EUR
Mindestbestellmenge: 2
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FDMC7200S fdmc7200s-d.pdf
FDMC7200S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.57 EUR
6000+0.53 EUR
9000+0.51 EUR
Mindestbestellmenge: 3000
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FDMS0300S fdms0300s-d.pdf
FDMS0300S
Hersteller: onsemi
Description: MOSFET N-CH 30V 31A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
Produkt ist nicht verfügbar
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FDMS0306AS fdms0306as-d.pdf
FDMS0306AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.89 EUR
6000+0.86 EUR
Mindestbestellmenge: 3000
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FDMS0308AS fdms0308as-d.pdf
FDMS0308AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.55 EUR
Mindestbestellmenge: 3000
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FDMS0310AS fdms0310as-d.pdf
FDMS0310AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
auf Bestellung 12000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.59 EUR
6000+0.55 EUR
Mindestbestellmenge: 3000
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FDMS0312AS FAIR-S-A0002363693-1.pdf?t.download=true&u=5oefqw
FDMS0312AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
auf Bestellung 330000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.39 EUR
6000+0.36 EUR
9000+0.34 EUR
15000+0.33 EUR
Mindestbestellmenge: 3000
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FDMS3604S FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw
FDMS3604S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
Produkt ist nicht verfügbar
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FQB8N90CTM fqb8n90ctm-d.pdf
FQB8N90CTM
Hersteller: onsemi
Description: MOSFET N-CH 900V 6.3A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Produkt ist nicht verfügbar
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FSA2567UMX-F135 FSA2567.pdf
FSA2567UMX-F135
Hersteller: onsemi
Description: IC SWITCH 4PDT 16UMLP
Packaging: Tape & Reel (TR)
Features: Break-Before-Make
Package / Case: 16-UFQFN
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Telecommunications
On-State Resistance (Max): 10Ohm
-3db Bandwidth: 475MHz
Supplier Device Package: 16-UMLP (1.8x2.6)
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Switch Circuit: 4PDT
Part Status: Obsolete
Number of Channels: 1
Produkt ist nicht verfügbar
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FXMAR2102UMX-F106 fxmar2102-d.pdf
FXMAR2102UMX-F106
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UMLP
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 35000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.32 EUR
10000+0.29 EUR
15000+0.28 EUR
25000+0.26 EUR
Mindestbestellmenge: 5000
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FDMC7200S fdmc7200s-d.pdf
FDMC7200S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 7A/13A 8PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual)
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 700mW, 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 7A, 13A
Input Capacitance (Ciss) (Max) @ Vds: 660pF @ 15V
Rds On (Max) @ Id, Vgs: 22mOhm @ 6A, 10V
Gate Charge (Qg) (Max) @ Vgs: 10nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-Power33 (3x3)
auf Bestellung 12817 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.18 EUR
13+1.38 EUR
100+0.92 EUR
500+0.72 EUR
1000+0.65 EUR
Mindestbestellmenge: 9
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FDMS0300S fdms0300s-d.pdf
FDMS0300S
Hersteller: onsemi
Description: MOSFET N-CH 30V 31A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 31A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 30A, 10V
Power Dissipation (Max): 2.5W (Ta), 96W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 133 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8705 pF @ 15 V
auf Bestellung 2905 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.85 EUR
10+2.49 EUR
100+1.7 EUR
500+1.37 EUR
1000+1.26 EUR
Mindestbestellmenge: 5
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FDMS0306AS fdms0306as-d.pdf
FDMS0306AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 26A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 26A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 26A, 10V
Power Dissipation (Max): 2.5W (Ta), 59W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 57 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3550 pF @ 15 V
auf Bestellung 11946 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.36 EUR
10+1.79 EUR
100+1.25 EUR
500+1.06 EUR
1000+0.97 EUR
Mindestbestellmenge: 8
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FDMS0308AS fdms0308as-d.pdf
FDMS0308AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 24A/49A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 49A (Tc)
Rds On (Max) @ Id, Vgs: 2.8mOhm @ 24A, 10V
Power Dissipation (Max): 2.5W (Ta), 50W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 47 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3000 pF @ 15 V
auf Bestellung 6764 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
9+2.09 EUR
14+1.33 EUR
100+0.88 EUR
500+0.69 EUR
1000+0.62 EUR
Mindestbestellmenge: 9
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FDMS0310AS fdms0310as-d.pdf
FDMS0310AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 19A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 19A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 19A, 10V
Power Dissipation (Max): 2.5W (Ta), 41W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 37 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2280 pF @ 15 V
auf Bestellung 14997 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.25 EUR
15+1.24 EUR
100+0.86 EUR
500+0.74 EUR
1000+0.64 EUR
Mindestbestellmenge: 8
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FDMS0312AS FAIR-S-A0002363693-1.pdf?t.download=true&u=5oefqw
FDMS0312AS
Hersteller: onsemi
Description: MOSFET N-CH 30V 18A/22A 8PQFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 22A (Tc)
Rds On (Max) @ Id, Vgs: 5mOhm @ 18A, 10V
Power Dissipation (Max): 2.5W (Ta), 36W (Tc)
Vgs(th) (Max) @ Id: 3V @ 1mA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 31 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1815 pF @ 15 V
auf Bestellung 331818 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.58 EUR
18+0.99 EUR
100+0.65 EUR
500+0.5 EUR
1000+0.45 EUR
Mindestbestellmenge: 12
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FDMS3604S FAIR-S-A0002363607-1.pdf?t.download=true&u=5oefqw
FDMS3604S
Hersteller: onsemi
Description: MOSFET 2N-CH 30V 13A/23A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Configuration: 2 N-Channel (Dual) Asymmetrical
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
Power - Max: 1W
Drain to Source Voltage (Vdss): 30V
Current - Continuous Drain (Id) @ 25°C: 13A, 23A
Input Capacitance (Ciss) (Max) @ Vds: 1785pF @ 15V
Rds On (Max) @ Id, Vgs: 8mOhm @ 13A, 10V
Gate Charge (Qg) (Max) @ Vgs: 29nC @ 10V
FET Feature: Logic Level Gate
Vgs(th) (Max) @ Id: 2.7V @ 250µA
Supplier Device Package: Power56
auf Bestellung 2464 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.64 EUR
10+1.78 EUR
100+1.25 EUR
500+1.02 EUR
1000+0.94 EUR
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FQB8N90CTM fqb8n90ctm-d.pdf
FQB8N90CTM
Hersteller: onsemi
Description: MOSFET N-CH 900V 6.3A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 6.3A (Tc)
Rds On (Max) @ Id, Vgs: 1.9Ohm @ 3.15A, 10V
Power Dissipation (Max): 171W (Tc)
Vgs(th) (Max) @ Id: 5V @ 250µA
Supplier Device Package: TO-263 (D2Pak)
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±30V
Drain to Source Voltage (Vdss): 900 V
Gate Charge (Qg) (Max) @ Vgs: 45 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2080 pF @ 25 V
Produkt ist nicht verfügbar
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FXMAR2102UMX-F106 fxmar2102-d.pdf
FXMAR2102UMX-F106
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UMLP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 8-UFQFN
Output Type: Open Drain, Tri-State
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 50MHz
Supplier Device Package: 8-UMLP (1.2x1.4)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 2
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Part Status: Active
Number of Circuits: 1
auf Bestellung 38379 Stücke:
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Anzahl Preis
12+1.53 EUR
20+0.93 EUR
25+0.77 EUR
100+0.59 EUR
250+0.5 EUR
500+0.44 EUR
1000+0.4 EUR
2500+0.35 EUR
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FQB9P25TM fqb9p25-d.pdf
FQB9P25TM
Hersteller: onsemi
Description: MOSFET P-CH 250V 9.4A D2PAK
auf Bestellung 800 Stücke:
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HMHAA280R2V hmhaa280-d.pdf
HMHAA280R2V
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.4V (Max)
Input Type: AC, DC
Current - Output / Channel: 50mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 50% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 600% @ 5mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 1470 Stücke:
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Anzahl Preis
10+1.76 EUR
16+1.14 EUR
100+0.75 EUR
1000+0.59 EUR
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MOC3081SR2VM moc3083m-d.pdf
MOC3081SR2VM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 600V/µs
Current - LED Trigger (Ift) (Max): 15mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 15362 Stücke:
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Anzahl Preis
10+1.88 EUR
14+1.31 EUR
100+0.98 EUR
500+0.83 EUR
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MOC3163SR2VM moc3163m-d.pdf
MOC3163SR2VM
Hersteller: onsemi
Description: OPTOISOLTR 4.17KV TRIAC 1CH 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C
Voltage - Forward (Vf) (Typ): 1.3V
Voltage - Isolation: 4170Vrms
Approval Agency: IEC/EN/DIN, UL
Current - Hold (Ih): 500µA (Typ)
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 1kV/µs
Current - LED Trigger (Ift) (Max): 5mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 600 V
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.1 EUR
10+2.21 EUR
100+1.69 EUR
500+1.46 EUR
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FOD4108SD fod4118-d.pdf
FOD4108SD
Hersteller: onsemi
Description: OPTOISOLATOR 5KV TRIAC 6SMD
Packaging: Cut Tape (CT)
Package / Case: 6-SMD, Gull Wing
Output Type: Triac
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.25V
Voltage - Isolation: 5000Vrms
Approval Agency: CSA, UL
Current - Hold (Ih): 500µA
Turn On Time: 60µs
Supplier Device Package: 6-SMD
Zero Crossing Circuit: Yes
Static dV/dt (Min): 10kV/µs
Current - LED Trigger (Ift) (Max): 2mA
Part Status: Active
Number of Channels: 1
Voltage - Off State: 800 V
Current - DC Forward (If) (Max): 30 mA
auf Bestellung 1934 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+6.11 EUR
10+4.33 EUR
100+3.54 EUR
500+2.99 EUR
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FODM121CR2V ONSM-S-A0003161728-1.pdf?t.download=true&u=5oefqw
FODM121CR2V
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANSISTOR 4SMD
Packaging: Cut Tape (CT)
Package / Case: 4-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 110°C
Voltage - Forward (Vf) (Typ): 1.3V (Max)
Input Type: DC
Current - Output / Channel: 80mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 200% @ 5mA
Supplier Device Package: 4-SMD
Voltage - Output (Max): 80V
Rise / Fall Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 1
Current - DC Forward (If) (Max): 50 mA
auf Bestellung 2177 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.21 EUR
23+0.79 EUR
100+0.52 EUR
1000+0.4 EUR
Mindestbestellmenge: 15
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IRLM220ATF irlm220a-d.pdf
IRLM220ATF
Hersteller: onsemi
Description: MOSFET N-CH 200V 1.13A SOT223-4
Packaging: Cut Tape (CT)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 1.13A (Ta)
Rds On (Max) @ Id, Vgs: 800mOhm @ 570mA, 5V
Power Dissipation (Max): 2W (Tc)
Supplier Device Package: SOT-223-4
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 5V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 200 V
Gate Charge (Qg) (Max) @ Vgs: 15 nC @ 5 V
Input Capacitance (Ciss) (Max) @ Vds: 430 pF @ 25 V
Produkt ist nicht verfügbar
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MMBT4403-D87Z DS_261_MMBT4403.pdf
MMBT4403-D87Z
Hersteller: onsemi
Description: TRANS PNP 40V 0.6A SOT-23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 2V
Frequency - Transition: 200MHz
Supplier Device Package: SOT-23-3
Part Status: Obsolete
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 350 mW
Produkt ist nicht verfügbar
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FL7734MX FAIR-S-A0002366313-1.pdf?t.download=true&u=5oefqw
FL7734MX
Hersteller: onsemi
Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.14 EUR
5000+1.08 EUR
Mindestbestellmenge: 2500
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FL7734MX FAIR-S-A0002366313-1.pdf?t.download=true&u=5oefqw
FL7734MX
Hersteller: onsemi
Description: IC LED DRIVER CTRLR 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width)
Voltage - Output: 1.5V ~ 5V
Mounting Type: Surface Mount
Number of Outputs: 1
Type: DC DC Controller
Operating Temperature: -40°C ~ 125°C (TA)
Internal Switch(s): No
Topology: Flyback, Step-Down (Buck), Step-Up (Boost)
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 6.75V
Voltage - Supply (Max): 30V
auf Bestellung 7460 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5+3.78 EUR
10+2.37 EUR
25+2.02 EUR
100+1.63 EUR
250+1.44 EUR
500+1.33 EUR
1000+1.24 EUR
Mindestbestellmenge: 5
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KAI-1010-ABA-CD-BA KAI-1010.pdf
KAI-1010-ABA-CD-BA
Hersteller: onsemi
Description: INTERLINE CCD IMAGE SENSOR
Packaging: Bag
Package / Case: 24-DIP Module
Type: CCD
Operating Temperature: -50°C ~ 70°C
Voltage - Supply: 12V ~ 15V
Pixel Size: 9µm x 9µm
Active Pixel Array: 1008H x 1018V
Supplier Device Package: 24-DIP
Frames per Second: 30
Produkt ist nicht verfügbar
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FGA40T65SHD fga40t65shd-d.pdf
FGA40T65SHD
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
auf Bestellung 398 Stücke:
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Anzahl Preis
3+7.23 EUR
10+4.79 EUR
Mindestbestellmenge: 3
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FGA50T65SHD fga50t65shd-d.pdf
FGA50T65SHD
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 100A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 50A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 22.4ns/73.6ns
Switching Energy: 1.28mJ (on), 384µJ (off)
Test Condition: 400V, 50A, 6Ohm, 15V
Gate Charge: 87 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 100 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 150 A
Power - Max: 319 W
auf Bestellung 441 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+8.64 EUR
30+4.87 EUR
120+4.04 EUR
Mindestbestellmenge: 3
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FGA6540WDF fga6540wdf-d.pdf
FGA6540WDF
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 101 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 40A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 16.8ns/54.4ns
Switching Energy: 1.37mJ (on), 250µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 55.5 nC
Part Status: Obsolete
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 238 W
Produkt ist nicht verfügbar
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FNA22512A fna22512a-d.pdf
FNA22512A
Hersteller: onsemi
Description: MODULE SPM 1.2KV 25A 34PWRDIP
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 25 A
Voltage: 1.2 kV
auf Bestellung 214 Stücke:
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Anzahl Preis
1+110.67 EUR
12+83.85 EUR
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FNA23512A fna23512a-d.pdf
FNA23512A
Hersteller: onsemi
Description: MODULE SPM 1.2V 35A 34PWRDIP
Packaging: Tube
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2500Vrms
Current: 35 A
Voltage: 1.2 kV
Produkt ist nicht verfügbar
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FODM8801CV fodm8801a-d.pdf
FODM8801CV
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tube
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 5364 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
8+2.2 EUR
13+1.39 EUR
150+1.03 EUR
600+0.98 EUR
Mindestbestellmenge: 8
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FAN6604MRMX fan6604-d.pdf
FAN6604MRMX
Hersteller: onsemi
Description: IC OFFLINE SWITCH FLYBACK 8SOIC
Packaging: Tape & Reel (TR)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 82.5%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 10V ~ 24V
Supplier Device Package: 8-SOIC
Fault Protection: Current Limiting, Open Loop, Over Temperature, Over Voltage, Short Circuit
Voltage - Start Up: 17 V
Produkt ist nicht verfügbar
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FCD2250N80Z fcd2250n80z-d.pdf
FCD2250N80Z
Hersteller: onsemi
Description: MOSFET N-CH 800V 2.6A DPAK
Produkt ist nicht verfügbar
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FDMC8321LDC fdmc8321ldc-d.pdf
FDMC8321LDC
Hersteller: onsemi
Description: MOSFET N-CH 40V 27A DLCOOL33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.6 EUR
Mindestbestellmenge: 3000
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FODM8801CR2V fodm8801a-d.pdf
FODM8801CR2V
Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Tape & Reel (TR)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 120000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2500+1.36 EUR
5000+1.3 EUR
7500+1.28 EUR
Mindestbestellmenge: 2500
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