| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||
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NL17SG14AMUTCG | onsemi |
Description: IC INVERT SCHMITT 1CH 1INP 6UDFNPackaging: Tape & Reel (TR) Features: Schmitt Trigger Package / Case: 6-UFDFN Mounting Type: Surface Mount Logic Type: Inverter Operating Temperature: -55°C ~ 125°C Voltage - Supply: 0.9V ~ 3.6V Current - Output High, Low: 8mA, 8mA Number of Inputs: 1 Supplier Device Package: 6-UDFN (1.45x1) Input Logic Level - High: 0.86V ~ 2.05V Input Logic Level - Low: 0.09V ~ 0.95V Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF Number of Circuits: 1 Current - Quiescent (Max): 500 nA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NL17SG17AMUTCG | onsemi |
Description: IC INVERTER 3.6V 6-UDFNSupplier Device Package: 6-UDFN (1.45x1) Current - Output High, Low: 8mA, 8mA Voltage - Supply: 0.9V ~ 3.6V Operating Temperature: -55°C ~ 125°C Logic Type: Inverter Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLAS5223CLMUTAG | onsemi |
Description: IC SWITCH SPDTX2 350MOHM 10UQFNSwitch Time (Ton, Toff) (Max): 50ns, 30ns Channel-to-Channel Matching (ΔRon): 50mOhm (Max) Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -70dB @ 100kHz Charge Injection: 38pC Voltage - Supply, Single (V+): 1.65V ~ 4.5V Supplier Device Package: 10-UQFN (1.4x1.8) -3db Bandwidth: 24MHz On-State Resistance (Max): 350mOhm Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 10-UFQFN Packaging: Tape & Reel (TR) Number of Circuits: 2 Current - Leakage (IS(off)) (Max): 5nA Channel Capacitance (CS(off), CD(off)): 60pF |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| NLJ27WZ14DFT2G | onsemi |
Description: IC BUFFER DUAL CMOS SC88-6 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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NLSX4402FMUTCG | onsemi |
Description: IC TRANSLTR BIDIRECTIONAL 8UDFNNumber of Circuits: 1 Part Status: Active Voltage - VCCB: 1.5 V ~ 5.5 V Voltage - VCCA: 1.5 V ~ 5.5 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: 8-UDFN (1.45x1) Data Rate: 20Mbps Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 8-UFDFN Features: Auto-Direction Sensing, Over Voltage Protection, Power-Off Protection Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLU1GT50AMUTCG | onsemi |
Description: IC BUFFER NON-INVERT 5.5V 6UDFNSupplier Device Package: 6-UDFN (1.45x1) Current - Output High, Low: 8mA, 8mA Number of Bits per Element: 1 Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C (TA) Logic Type: Buffer, Non-Inverting Number of Elements: 1 Mounting Type: Surface Mount Output Type: Push-Pull Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLV14490DWR2G | onsemi |
Description: IC HEX BOUNCE ELIMINATOR 16SOICSupplier Device Package: 16-SOIC Supply Voltage: 3V ~ 18V Operating Temperature: -55°C ~ 125°C Logic Type: Contact Bounce Eliminator Number of Bits: 6 Mounting Type: Surface Mount Package / Case: 16-SOIC (0.295", 7.50mm Width) Packaging: Tape & Reel (TR) |
auf Bestellung 1000 Stücke: Lieferzeit 10-14 Tag (e) |
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NLV74VHC1G07DTT1G | onsemi |
Description: IC BUF NON-INVERT 5.5V 16TSSOP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLV74VHC1GT86DTT1G | onsemi |
Description: IC GATE XOR 1CH 2-INP 5TSOPQualification: AEC-Q100 Current - Quiescent (Max): 1 µA Number of Circuits: 1 Grade: Automotive Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF Input Logic Level - Low: 0.1V ~ 0.36V Input Logic Level - High: 2.9V ~ 4.4V Supplier Device Package: 5-TSOP Number of Inputs: 2 Current - Output High, Low: 8mA, 8mA Voltage - Supply: 3V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: XOR (Exclusive OR) Mounting Type: Surface Mount Package / Case: SOT-23-5 Thin, TSOT-23-5 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLV7SZ58DFT2G | onsemi |
Description: IC GATE MULTIFUNCT CONF SC-88Qualification: AEC-Q101 Grade: Automotive Number of Circuits: 1 Supplier Device Package: SC-88/SC70-6/SOT-363 Schmitt Trigger Input: Yes Number of Inputs: 3 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: Configurable Multiple Function Mounting Type: Surface Mount Output Type: Single-Ended Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLV9306USG | onsemi |
Description: IC TRANSLATOR BIDIRECTIONAL US8Number of Circuits: 1 Part Status: Active Voltage - VCCB: 1.8 V ~ 5.5 V Voltage - VCCA: 1 V ~ 3.6 V Channels per Circuit: 2 Translator Type: Voltage Level Channel Type: Bidirectional Supplier Device Package: US8 Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Output Type: Open Drain Package / Case: 8-VFSOP (0.091", 2.30mm Width) Features: Auto-Direction Sensing Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLVASB3157DFT2G | onsemi |
Description: IC SWITCH SPDTX1 7OHM SC88Number of Circuits: 1 Current - Leakage (IS(off)) (Max): 100nA Channel-to-Channel Matching (ΔRon): 500mOhm Multiplexer/Demultiplexer Circuit: 2:1 Switch Circuit: SPDT Crosstalk: -54dB @ 10MHz Charge Injection: 7pC Voltage - Supply, Single (V+): 1.65V ~ 5.5V Supplier Device Package: SC-88/SC70-6/SOT-363 -3db Bandwidth: 250MHz On-State Resistance (Max): 7Ohm (Typ) Operating Temperature: -55°C ~ 125°C (TA) Mounting Type: Surface Mount Package / Case: 6-TSSOP, SC-88, SOT-363 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NLX1G11AMUTCG | onsemi |
Description: IC GATE AND 1CH 3-INP 6UDFNCurrent - Quiescent (Max): 1 µA Number of Circuits: 1 Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF Supplier Device Package: 6-UDFN (1.45x1) Number of Inputs: 3 Current - Output High, Low: 32mA, 32mA Voltage - Supply: 1.65V ~ 5.5V Operating Temperature: -55°C ~ 125°C Logic Type: AND Gate Mounting Type: Surface Mount Package / Case: 6-UFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
| NOA1212CUTAG | onsemi |
Description: SENSOR OPT 540NM AMBIENT 6DFNWavelength: 540nm Package / Case: 6-UFDFN Exposed Pad Packaging: Tape & Reel (TR) Proximity Detection: No Supplier Device Package: 6-DFN (1.6x1.6) Voltage - Supply: 2V ~ 5.5V Operating Temperature: -40°C ~ 85°C Type: Ambient Mounting Type: Surface Mount Output Type: Current |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||
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NRVTS12100MFST1G | onsemi |
Description: DIODE SCHOTTKY 100V 12A 5DFNCurrent - Reverse Leakage @ Vr: 95 µA @ 100 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A Voltage - DC Reverse (Vr) (Max): 100 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: 5-DFN (5x6) (8-SOFL) Current - Average Rectified (Io): 12A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSM6056MT1G | onsemi |
Description: TRANS NPN 40V 0.6A SC74Power - Max: 380 mW Voltage - Collector Emitter Breakdown (Max): 40 V Current - Collector (Ic) (Max): 600 mA Part Status: Active Supplier Device Package: SC-74 Frequency - Transition: 250MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN + Zener Diode (Isolated) Mounting Type: Surface Mount Package / Case: SC-74, SOT-457 Packaging: Tape & Reel (TR) |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSR0170HT1G | onsemi |
Description: DIODE SCHOTTKY 70V 70MA SOD323Packaging: Tape & Reel (TR) Package / Case: SC-76, SOD-323 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 70mA Supplier Device Package: SOD-323 Operating Temperature - Junction: -55°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 70 V Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA Current - Reverse Leakage @ Vr: 3 µA @ 70 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSR01L30P2T5G | onsemi |
Description: DIODE SCHOTTKY 30V 100MA SOD923Packaging: Tape & Reel (TR) Package / Case: SOD-923 Mounting Type: Surface Mount Speed: Small Signal =< 200mA (Io), Any Speed Technology: Schottky Current - Average Rectified (Io): 100mA Supplier Device Package: SOD-923 Operating Temperature - Junction: 150°C (Max) Voltage - DC Reverse (Vr) (Max): 30 V Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA Current - Reverse Leakage @ Vr: 3 µA @ 30 V |
auf Bestellung 136000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NSR05F30QNXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 500MA 2DSN Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 75 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: 2-DSN (1x0.6), (0402) Current - Average Rectified (Io): 500mA |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
| NSR05F40QNXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 500MA 2DSN Current - Average Rectified (Io): 500mA Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 0402 (1006 Metric) Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 75 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA Voltage - DC Reverse (Vr) (Max): 40 V Part Status: Obsolete Operating Temperature - Junction: 150°C (Max) Supplier Device Package: 2-DSN (1x0.6), (0402) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | |||||||
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NSR10F30QNXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 1A 2DSN Operating Temperature - Junction: -55°C ~ 125°C Supplier Device Package: 2-DSN (1.4x0.6) Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) Current - Reverse Leakage @ Vr: 100 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSR10F40QNXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 1A 2DSNCurrent - Reverse Leakage @ Vr: 100 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A Voltage - DC Reverse (Vr) (Max): 40 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: 2-DSN (1.4x0.6) Current - Average Rectified (Io): 1A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSR20F30QNXT5G | onsemi |
Description: DIODE SCHOTTKY 30V 2A 2DSNCurrent - Reverse Leakage @ Vr: 150 µA @ 30 V Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A Voltage - DC Reverse (Vr) (Max): 30 V Operating Temperature - Junction: 150°C (Max) Supplier Device Package: 2-DSN (1.6x.80) Current - Average Rectified (Io): 2A Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: 2-XDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 5000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSV45035JZT1G | onsemi |
Description: IC CURRENT REGULATOR 15% SOT223Qualification: AEC-Q101 Grade: Automotive Supplier Device Package: SOT-223 (TO-261) Operating Temperature: -55°C ~ 150°C Accuracy: ±15% Current - Output: 70mA Voltage - Input: 45V Function: Current Regulator Mounting Type: Surface Mount Sensing Method: High/Low-Side Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVB143ZPDXV6T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-563Packaging: Tape & Reel (TR) Package / Case: SOT-563, SOT-666 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 500mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Resistor - Emitter Base (R2): 47kOhms Supplier Device Package: SOT-563 Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBAS21AHT1G | onsemi |
Description: DIODE STANDARD 250V 200MA SOD323Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA Voltage - DC Reverse (Vr) (Max): 250 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 200mA Capacitance @ Vr, F: 5pF @ 0V, 1MHz Technology: Standard Reverse Recovery Time (trr): 50 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 40 nA @ 200 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBC817-16LT1G | onsemi |
Description: TRANS NPN 45V 0.5A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Frequency - Transition: 100MHz Supplier Device Package: SOT-23-3 (TO-236) Part Status: Active Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBC857CWT1G | onsemi |
Description: TRANS PNP 45V 0.1A SC70-3Packaging: Tape & Reel (TR) Package / Case: SC-70, SOT-323 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA Current - Collector Cutoff (Max): 15nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V Frequency - Transition: 100MHz Supplier Device Package: SC-70-3 (SOT323) Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 150 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBCP56-10T3G | onsemi |
Description: TRANS NPN 80V 1A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: NPN Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V Frequency - Transition: 130MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 80 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBCP69T1G | onsemi |
Description: TRANS PNP 20V 1A SOT223Packaging: Tape & Reel (TR) Package / Case: TO-261-4, TO-261AA Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -65°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A Current - Collector Cutoff (Max): 10µA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V Frequency - Transition: 60MHz Supplier Device Package: SOT-223 (TO-261) Part Status: Active Current - Collector (Ic) (Max): 1 A Voltage - Collector Emitter Breakdown (Max): 20 V Power - Max: 1.5 W |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBCW32LT1G | onsemi |
Description: TRANS NPN 32V 0.1A SOT23-3Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 32 V Current - Collector (Ic) (Max): 100 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V Current - Collector Cutoff (Max): 100nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBCX17LT1G | onsemi |
Description: TRANS PNP 45V 0.5A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 500 mA Voltage - Collector Emitter Breakdown (Max): 45 V Power - Max: 225 mW Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBSP19AT1G | onsemi |
Description: TRANS NPN 350V 0.1A SOT223Package / Case: TO-261-4, TO-261AA Packaging: Tape & Reel (TR) Power - Max: 800 mW Voltage - Collector Emitter Breakdown (Max): 350 V Current - Collector (Ic) (Max): 100 mA Part Status: Obsolete Supplier Device Package: SOT-223 (TO-261) Frequency - Transition: 70MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V Current - Collector Cutoff (Max): 20nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA Operating Temperature: -65°C ~ 150°C (TJ) Transistor Type: NPN Mounting Type: Surface Mount |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVBSS63LT1G | onsemi |
Description: TRANS PNP 100V 0.1A SOT23-3Packaging: Tape & Reel (TR) Package / Case: TO-236-3, SC-59, SOT-23-3 Mounting Type: Surface Mount Transistor Type: PNP Operating Temperature: -55°C ~ 150°C (TJ) Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA Current - Collector Cutoff (Max): 100nA (ICBO) DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V Frequency - Transition: 95MHz Supplier Device Package: SOT-23-3 (TO-236) Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 100 V Power - Max: 225 mW |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVDAN222T1G | onsemi |
Description: DIODE ARRAY GP 80V 100MA SC75Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 100 nA @ 70 V Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA Voltage - DC Reverse (Vr) (Max): 80 V Part Status: Active Operating Temperature - Junction: 150°C (Max) Supplier Device Package: SC-75, SOT-416 Current - Average Rectified (Io) (per Diode): 100mA (DC) Diode Configuration: 1 Pair Common Cathode Technology: Standard Reverse Recovery Time (trr): 4 ns Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-75, SOT-416 Packaging: Tape & Reel (TR) |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVDTC143ZET1G | onsemi |
Description: TRANS PREBIAS NPN 50V 0.1A SC75Packaging: Tape & Reel (TR) Package / Case: SC-75, SOT-416 Mounting Type: Surface Mount Transistor Type: NPN - Pre-Biased Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V Supplier Device Package: SC-75, SOT-416 Part Status: Active Current - Collector (Ic) (Max): 100 mA Voltage - Collector Emitter Breakdown (Max): 50 V Power - Max: 200 mW Resistor - Base (R1): 4.7 kOhms Resistor - Emitter Base (R2): 47 kOhms Grade: Automotive Qualification: AEC-Q101 Resistors Included: R1 and R2 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVEMC2DXV5T1G | onsemi |
Description: TRANS PREBIAS NPN/PNP 50V SOT553Part Status: Active Supplier Device Package: SOT-553 Resistor - Emitter Base (R2): 22kOhms Resistor - Base (R1): 22kOhms DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Current - Collector Cutoff (Max): 500nA Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Voltage - Collector Emitter Breakdown (Max): 50V Current - Collector (Ic) (Max): 100mA Power - Max: 500mW Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction) Mounting Type: Surface Mount Package / Case: SOT-553 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Grade: Automotive |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 4000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVMMBT5087LT1G | onsemi |
Description: TRANS PNP 50V 0.05A SOT23-3Qualification: AEC-Q101 Grade: Automotive Power - Max: 225 mW Voltage - Collector Emitter Breakdown (Max): 50 V Current - Collector (Ic) (Max): 50 mA Part Status: Active Supplier Device Package: SOT-23-3 (TO-236) Frequency - Transition: 40MHz DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V Current - Collector Cutoff (Max): 50nA (ICBO) Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA Operating Temperature: -55°C ~ 150°C (TJ) Transistor Type: PNP Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 123000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVMUN5312DW1T2G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V Resistor - Base (R1): 22kOhms Resistor - Emitter Base (R2): 22kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVMUN5316DW1T1G | onsemi |
Description: TRANS PREBIAS 1NPN 1PNP SOT-363Packaging: Tape & Reel (TR) Package / Case: 6-TSSOP, SC-88, SOT-363 Mounting Type: Surface Mount Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual) Power - Max: 250mW Current - Collector (Ic) (Max): 100mA Voltage - Collector Emitter Breakdown (Max): 50V Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA Current - Collector Cutoff (Max): 500nA DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V Resistor - Base (R1): 4.7kOhms Supplier Device Package: SC-88/SC70-6/SOT-363 Part Status: Active Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVR0240HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 10 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 4pF @ 5V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVR0340HT1G | onsemi |
Description: DIODE SCHOTTKY 40V 250MA SOD323Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) Qualification: AEC-Q101 Current - Reverse Leakage @ Vr: 6 µA @ 40 V Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA Voltage - DC Reverse (Vr) (Max): 40 V Grade: Automotive Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 250mA Capacitance @ Vr, F: 6pF @ 10V, 1MHz Technology: Schottky Reverse Recovery Time (trr): 5 ns Speed: Fast Recovery =< 500ns, > 200mA (Io) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NSVR05F40NXT5G | onsemi |
Description: DIODE SCHOTTKY 40V 500MA 2DSNPackaging: Tape & Reel (TR) Package / Case: 0402 (1006 Metric) Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 35pF @ 10V, 1MHz Current - Average Rectified (Io): 500mA Supplier Device Package: 2-DSN (1x0.6), (0402) Operating Temperature - Junction: -40°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 40 V Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA Current - Reverse Leakage @ Vr: 75 µA @ 40 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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NSVRB751V40T1G | onsemi |
Description: DIODE SCHOTTKY 30V 30MA SOD323Qualification: AEC-Q101 Grade: Automotive Current - Reverse Leakage @ Vr: 500 nA @ 30 V Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA Voltage - DC Reverse (Vr) (Max): 30 V Part Status: Active Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: SOD-323 Current - Average Rectified (Io): 30mA Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz Technology: Schottky Speed: Small Signal =< 200mA (Io), Any Speed Mounting Type: Surface Mount Package / Case: SC-76, SOD-323 Packaging: Tape & Reel (TR) |
auf Bestellung 18000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTLUS3C18PZTAG | onsemi |
Description: MOSFET P-CH 12V 4.4A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: 6-UDFN (1.6x1.6) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTLUS3C18PZTBG | onsemi |
Description: MOSFET P-CH 12V 4.4A 6UDFNInput Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V Drain to Source Voltage (Vdss): 12 V Vgs (Max): ±8V Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V Part Status: Obsolete Supplier Device Package: 6-UDFN (1.6x1.6) Vgs(th) (Max) @ Id: 1V @ 250µA Power Dissipation (Max): 660mW (Ta) Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-PowerUFDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFD4C85NT1G | onsemi |
Description: MOSFET 2N-CH 30V 15.4A 8DFNMounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.1V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A Drain to Source Voltage (Vdss): 30V Power - Max: 1.13W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFD4C86NT1G | onsemi |
Description: MOSFET 2N-CH 30V 11.3A 8DFNPart Status: Obsolete Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFD4C87NT1G | onsemi |
Description: MOSFET 2N-CH 30V 11.7A 8DFNDrain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) Supplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFD4C88NT1G | onsemi |
Description: MOSFET 2N-CH 30V 11.7A 8DFNSupplier Device Package: 8-DFN (5x6) Vgs(th) (Max) @ Id: 2.2V @ 250µA Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A Drain to Source Voltage (Vdss): 30V Power - Max: 1.1W Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Configuration: 2 N-Channel (Dual) Asymmetrical Mounting Type: Surface Mount Package / Case: 8-PowerTDFN Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4982NFT1G | onsemi |
Description: MOSFET N-CH 30V 26.5A/207A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 1mA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4C01NT1G | onsemi |
Description: MOSFET N-CH 30V 47A/303A 5DFN |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4C03NT1G | onsemi |
Description: MOSFET N-CH 30V 30A/136A 5DFNTechnology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 3.1W (Ta), 64W (Tc) Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc) FET Type: N-Channel |
auf Bestellung 1500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C05NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 11.9A/78A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4C06NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 11A/69A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 770mW (Ta) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4C09NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 9A/52A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.1V @ 250µA Power Dissipation (Max): 760mW (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4C10NT1G-001 | onsemi |
Description: MOSFET N-CH 30V 8.2A/46A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2.2V @ 250µA Power Dissipation (Max): 750mW (Ta) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4H01NFT1G | onsemi |
Description: MOSFET N-CH 25V 54A/334A 5DFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 1500 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS4H02NFT1G | onsemi |
Description: MOSFET N-CH 25V 37A/193A 5DFNPackaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V Power Dissipation (Max): 3.13W (Ta), 83W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 25 V Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||
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NTMFS5C404NLT1G | onsemi |
Description: MOSFET N-CH 40V 52A/370A 5DFNInput Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V Drain to Source Voltage (Vdss): 40 V Part Status: Active Supplier Device Package: 5-DFN (5x6) (8-SOFL) Vgs(th) (Max) @ Id: 2V @ 250µA Power Dissipation (Max): 3.2W (Ta), 167W (Tc) Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerTDFN, 5 Leads Packaging: Tape & Reel (TR) Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V |
auf Bestellung 240000 Stücke: Lieferzeit 10-14 Tag (e) |
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| NL17SG14AMUTCG |
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Hersteller: onsemi
Description: IC INVERT SCHMITT 1CH 1INP 6UDFN
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - High: 0.86V ~ 2.05V
Input Logic Level - Low: 0.09V ~ 0.95V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Description: IC INVERT SCHMITT 1CH 1INP 6UDFN
Packaging: Tape & Reel (TR)
Features: Schmitt Trigger
Package / Case: 6-UFDFN
Mounting Type: Surface Mount
Logic Type: Inverter
Operating Temperature: -55°C ~ 125°C
Voltage - Supply: 0.9V ~ 3.6V
Current - Output High, Low: 8mA, 8mA
Number of Inputs: 1
Supplier Device Package: 6-UDFN (1.45x1)
Input Logic Level - High: 0.86V ~ 2.05V
Input Logic Level - Low: 0.09V ~ 0.95V
Max Propagation Delay @ V, Max CL: 5.2ns @ 3.3V, 30pF
Number of Circuits: 1
Current - Quiescent (Max): 500 nA
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NL17SG17AMUTCG |
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Hersteller: onsemi
Description: IC INVERTER 3.6V 6-UDFN
Supplier Device Package: 6-UDFN (1.45x1)
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC INVERTER 3.6V 6-UDFN
Supplier Device Package: 6-UDFN (1.45x1)
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 0.9V ~ 3.6V
Operating Temperature: -55°C ~ 125°C
Logic Type: Inverter
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NLAS5223CLMUTAG |
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Hersteller: onsemi
Description: IC SWITCH SPDTX2 350MOHM 10UQFN
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 10-UQFN (1.4x1.8)
-3db Bandwidth: 24MHz
On-State Resistance (Max): 350mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 60pF
Description: IC SWITCH SPDTX2 350MOHM 10UQFN
Switch Time (Ton, Toff) (Max): 50ns, 30ns
Channel-to-Channel Matching (ΔRon): 50mOhm (Max)
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -70dB @ 100kHz
Charge Injection: 38pC
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 10-UQFN (1.4x1.8)
-3db Bandwidth: 24MHz
On-State Resistance (Max): 350mOhm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Packaging: Tape & Reel (TR)
Number of Circuits: 2
Current - Leakage (IS(off)) (Max): 5nA
Channel Capacitance (CS(off), CD(off)): 60pF
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NLSX4402FMUTCG |
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Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 5.5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UDFN (1.45x1)
Data Rate: 20Mbps
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-UFDFN
Features: Auto-Direction Sensing, Over Voltage Protection, Power-Off Protection
Packaging: Tape & Reel (TR)
Description: IC TRANSLTR BIDIRECTIONAL 8UDFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.5 V ~ 5.5 V
Voltage - VCCA: 1.5 V ~ 5.5 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 8-UDFN (1.45x1)
Data Rate: 20Mbps
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-UFDFN
Features: Auto-Direction Sensing, Over Voltage Protection, Power-Off Protection
Packaging: Tape & Reel (TR)
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| NLU1GT50AMUTCG |
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Hersteller: onsemi
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Supplier Device Package: 6-UDFN (1.45x1)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC BUFFER NON-INVERT 5.5V 6UDFN
Supplier Device Package: 6-UDFN (1.45x1)
Current - Output High, Low: 8mA, 8mA
Number of Bits per Element: 1
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Logic Type: Buffer, Non-Inverting
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
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| NLV14490DWR2G |
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Hersteller: onsemi
Description: IC HEX BOUNCE ELIMINATOR 16SOIC
Supplier Device Package: 16-SOIC
Supply Voltage: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: Contact Bounce Eliminator
Number of Bits: 6
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
Description: IC HEX BOUNCE ELIMINATOR 16SOIC
Supplier Device Package: 16-SOIC
Supply Voltage: 3V ~ 18V
Operating Temperature: -55°C ~ 125°C
Logic Type: Contact Bounce Eliminator
Number of Bits: 6
Mounting Type: Surface Mount
Package / Case: 16-SOIC (0.295", 7.50mm Width)
Packaging: Tape & Reel (TR)
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1000+ | 1.11 EUR |
| NLV74VHC1G07DTT1G |
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Hersteller: onsemi
Description: IC BUF NON-INVERT 5.5V 16TSSOP
Description: IC BUF NON-INVERT 5.5V 16TSSOP
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| NLV74VHC1GT86DTT1G |
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Hersteller: onsemi
Description: IC GATE XOR 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.36V
Input Logic Level - High: 2.9V ~ 4.4V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
Description: IC GATE XOR 1CH 2-INP 5TSOP
Qualification: AEC-Q100
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Grade: Automotive
Max Propagation Delay @ V, Max CL: 8.8ns @ 5V, 50pF
Input Logic Level - Low: 0.1V ~ 0.36V
Input Logic Level - High: 2.9V ~ 4.4V
Supplier Device Package: 5-TSOP
Number of Inputs: 2
Current - Output High, Low: 8mA, 8mA
Voltage - Supply: 3V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: XOR (Exclusive OR)
Mounting Type: Surface Mount
Package / Case: SOT-23-5 Thin, TSOT-23-5
Packaging: Tape & Reel (TR)
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| NLV7SZ58DFT2G |
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Hersteller: onsemi
Description: IC GATE MULTIFUNCT CONF SC-88
Qualification: AEC-Q101
Grade: Automotive
Number of Circuits: 1
Supplier Device Package: SC-88/SC70-6/SOT-363
Schmitt Trigger Input: Yes
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC GATE MULTIFUNCT CONF SC-88
Qualification: AEC-Q101
Grade: Automotive
Number of Circuits: 1
Supplier Device Package: SC-88/SC70-6/SOT-363
Schmitt Trigger Input: Yes
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: Configurable Multiple Function
Mounting Type: Surface Mount
Output Type: Single-Ended
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| NLV9306USG |
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Hersteller: onsemi
Description: IC TRANSLATOR BIDIRECTIONAL US8
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 1 V ~ 3.6 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: US8
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Description: IC TRANSLATOR BIDIRECTIONAL US8
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 1.8 V ~ 5.5 V
Voltage - VCCA: 1 V ~ 3.6 V
Channels per Circuit: 2
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: US8
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Open Drain
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Features: Auto-Direction Sensing
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NLVASB3157DFT2G |
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Hersteller: onsemi
Description: IC SWITCH SPDTX1 7OHM SC88
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 10MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-88/SC70-6/SOT-363
-3db Bandwidth: 250MHz
On-State Resistance (Max): 7Ohm (Typ)
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
Description: IC SWITCH SPDTX1 7OHM SC88
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel-to-Channel Matching (ΔRon): 500mOhm
Multiplexer/Demultiplexer Circuit: 2:1
Switch Circuit: SPDT
Crosstalk: -54dB @ 10MHz
Charge Injection: 7pC
Voltage - Supply, Single (V+): 1.65V ~ 5.5V
Supplier Device Package: SC-88/SC70-6/SOT-363
-3db Bandwidth: 250MHz
On-State Resistance (Max): 7Ohm (Typ)
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Tape & Reel (TR)
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| NLX1G11AMUTCG |
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Hersteller: onsemi
Description: IC GATE AND 1CH 3-INP 6UDFN
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-UDFN (1.45x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
Description: IC GATE AND 1CH 3-INP 6UDFN
Current - Quiescent (Max): 1 µA
Number of Circuits: 1
Max Propagation Delay @ V, Max CL: 7ns @ 5V, 50pF
Supplier Device Package: 6-UDFN (1.45x1)
Number of Inputs: 3
Current - Output High, Low: 32mA, 32mA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Logic Type: AND Gate
Mounting Type: Surface Mount
Package / Case: 6-UFDFN
Packaging: Tape & Reel (TR)
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| NOA1212CUTAG |
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Hersteller: onsemi
Description: SENSOR OPT 540NM AMBIENT 6DFN
Wavelength: 540nm
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Proximity Detection: No
Supplier Device Package: 6-DFN (1.6x1.6)
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Ambient
Mounting Type: Surface Mount
Output Type: Current
Description: SENSOR OPT 540NM AMBIENT 6DFN
Wavelength: 540nm
Package / Case: 6-UFDFN Exposed Pad
Packaging: Tape & Reel (TR)
Proximity Detection: No
Supplier Device Package: 6-DFN (1.6x1.6)
Voltage - Supply: 2V ~ 5.5V
Operating Temperature: -40°C ~ 85°C
Type: Ambient
Mounting Type: Surface Mount
Output Type: Current
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| NRVTS12100MFST1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 100V 12A 5DFN
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 100V 12A 5DFN
Current - Reverse Leakage @ Vr: 95 µA @ 100 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 12 A
Voltage - DC Reverse (Vr) (Max): 100 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Current - Average Rectified (Io): 12A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
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| NSM6056MT1G |
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Hersteller: onsemi
Description: TRANS NPN 40V 0.6A SC74
Power - Max: 380 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SC-74
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN + Zener Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
Description: TRANS NPN 40V 0.6A SC74
Power - Max: 380 mW
Voltage - Collector Emitter Breakdown (Max): 40 V
Current - Collector (Ic) (Max): 600 mA
Part Status: Active
Supplier Device Package: SC-74
Frequency - Transition: 250MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 150mA, 1V
Vce Saturation (Max) @ Ib, Ic: 750mV @ 50mA, 500mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN + Zener Diode (Isolated)
Mounting Type: Surface Mount
Package / Case: SC-74, SOT-457
Packaging: Tape & Reel (TR)
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.14 EUR |
| 6000+ | 0.13 EUR |
| NSR0170HT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Description: DIODE SCHOTTKY 70V 70MA SOD323
Packaging: Tape & Reel (TR)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 70mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 70 V
Voltage - Forward (Vf) (Max) @ If: 730 mV @ 15 mA
Current - Reverse Leakage @ Vr: 3 µA @ 70 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NSR01L30P2T5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
Description: DIODE SCHOTTKY 30V 100MA SOD923
Packaging: Tape & Reel (TR)
Package / Case: SOD-923
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 100mA
Supplier Device Package: SOD-923
Operating Temperature - Junction: 150°C (Max)
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 530 mV @ 100 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
auf Bestellung 136000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 8000+ | 0.1 EUR |
| 16000+ | 0.095 EUR |
| NSR05F30QNXT5G |
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 500MA 2DSN
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1x0.6), (0402)
Current - Average Rectified (Io): 500mA
Description: DIODE SCHOTTKY 30V 500MA 2DSN
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 430 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1x0.6), (0402)
Current - Average Rectified (Io): 500mA
Produkt ist nicht verfügbar
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| NSR05F40QNXT5G |
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1x0.6), (0402)
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 0402 (1006 Metric)
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Part Status: Obsolete
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1x0.6), (0402)
Produkt ist nicht verfügbar
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| NSR10F30QNXT5G |
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A 2DSN
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Description: DIODE SCHOTTKY 30V 1A 2DSN
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Current - Reverse Leakage @ Vr: 100 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 470 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 30 V
Produkt ist nicht verfügbar
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| NSR10F40QNXT5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A 2DSN
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 1A 2DSN
Current - Reverse Leakage @ Vr: 100 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 490 mV @ 1 A
Voltage - DC Reverse (Vr) (Max): 40 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.4x0.6)
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| NSR20F30QNXT5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 2A 2DSN
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.6x.80)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 2A 2DSN
Current - Reverse Leakage @ Vr: 150 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 480 mV @ 2 A
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: 2-DSN (1.6x.80)
Current - Average Rectified (Io): 2A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: 2-XDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 5000 Stücke
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| NSV45035JZT1G |
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Hersteller: onsemi
Description: IC CURRENT REGULATOR 15% SOT223
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-223 (TO-261)
Operating Temperature: -55°C ~ 150°C
Accuracy: ±15%
Current - Output: 70mA
Voltage - Input: 45V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Description: IC CURRENT REGULATOR 15% SOT223
Qualification: AEC-Q101
Grade: Automotive
Supplier Device Package: SOT-223 (TO-261)
Operating Temperature: -55°C ~ 150°C
Accuracy: ±15%
Current - Output: 70mA
Voltage - Input: 45V
Function: Current Regulator
Mounting Type: Surface Mount
Sensing Method: High/Low-Side
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
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| NSVB143ZPDXV6T1G |
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Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-563
Packaging: Tape & Reel (TR)
Package / Case: SOT-563, SOT-666
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 500mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SOT-563
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
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| NSVBAS21AHT1G |
![]() |
Hersteller: onsemi
Description: DIODE STANDARD 250V 200MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 nA @ 200 V
Description: DIODE STANDARD 250V 200MA SOD323
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 200 mA
Voltage - DC Reverse (Vr) (Max): 250 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 5pF @ 0V, 1MHz
Technology: Standard
Reverse Recovery Time (trr): 50 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 40 nA @ 200 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NSVBC817-16LT1G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Description: TRANS NPN 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 700mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
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| NSVBC857CWT1G |
![]() |
Hersteller: onsemi
Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Description: TRANS PNP 45V 0.1A SC70-3
Packaging: Tape & Reel (TR)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 650mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 420 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SC-70-3 (SOT323)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 150 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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| NSVBCP56-10T3G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Description: TRANS NPN 80V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 63 @ 150mA, 2V
Frequency - Transition: 130MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 80 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
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| NSVBCP69T1G |
![]() |
Hersteller: onsemi
Description: TRANS PNP 20V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Description: TRANS PNP 20V 1A SOT223
Packaging: Tape & Reel (TR)
Package / Case: TO-261-4, TO-261AA
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 100mA, 1A
Current - Collector Cutoff (Max): 10µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 85 @ 500mA, 1V
Frequency - Transition: 60MHz
Supplier Device Package: SOT-223 (TO-261)
Part Status: Active
Current - Collector (Ic) (Max): 1 A
Voltage - Collector Emitter Breakdown (Max): 20 V
Power - Max: 1.5 W
Produkt ist nicht verfügbar
Mindestbestellmenge: 1000 Stücke
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Stück im Wert von UAH
| NSVBCW32LT1G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS NPN 32V 0.1A SOT23-3
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 32 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 500µA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NSVBCX17LT1G |
![]() |
Hersteller: onsemi
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PNP 45V 0.5A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 620mV @ 50mA, 500mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 100mA, 1V
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 500 mA
Voltage - Collector Emitter Breakdown (Max): 45 V
Power - Max: 225 mW
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NSVBSP19AT1G |
![]() |
Hersteller: onsemi
Description: TRANS NPN 350V 0.1A SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Description: TRANS NPN 350V 0.1A SOT223
Package / Case: TO-261-4, TO-261AA
Packaging: Tape & Reel (TR)
Power - Max: 800 mW
Voltage - Collector Emitter Breakdown (Max): 350 V
Current - Collector (Ic) (Max): 100 mA
Part Status: Obsolete
Supplier Device Package: SOT-223 (TO-261)
Frequency - Transition: 70MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 40 @ 20mA, 10V
Current - Collector Cutoff (Max): 20nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 4mA, 50mA
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: NPN
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NSVBSS63LT1G |
![]() |
Hersteller: onsemi
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Description: TRANS PNP 100V 0.1A SOT23-3
Packaging: Tape & Reel (TR)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 30 @ 25mA, 1V
Frequency - Transition: 95MHz
Supplier Device Package: SOT-23-3 (TO-236)
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 100 V
Power - Max: 225 mW
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
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Stück im Wert von UAH
| NSVDAN222T1G |
![]() |
Hersteller: onsemi
Description: DIODE ARRAY GP 80V 100MA SC75
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-75, SOT-416
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
Description: DIODE ARRAY GP 80V 100MA SC75
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 100 nA @ 70 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Voltage - DC Reverse (Vr) (Max): 80 V
Part Status: Active
Operating Temperature - Junction: 150°C (Max)
Supplier Device Package: SC-75, SOT-416
Current - Average Rectified (Io) (per Diode): 100mA (DC)
Diode Configuration: 1 Pair Common Cathode
Technology: Standard
Reverse Recovery Time (trr): 4 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-75, SOT-416
Packaging: Tape & Reel (TR)
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| NSVDTC143ZET1G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Description: TRANS PREBIAS NPN 50V 0.1A SC75
Packaging: Tape & Reel (TR)
Package / Case: SC-75, SOT-416
Mounting Type: Surface Mount
Transistor Type: NPN - Pre-Biased
Vce Saturation (Max) @ Ib, Ic: 250mV @ 1mA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Supplier Device Package: SC-75, SOT-416
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 50 V
Power - Max: 200 mW
Resistor - Base (R1): 4.7 kOhms
Resistor - Emitter Base (R2): 47 kOhms
Grade: Automotive
Qualification: AEC-Q101
Resistors Included: R1 and R2
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVEMC2DXV5T1G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Part Status: Active
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Description: TRANS PREBIAS NPN/PNP 50V SOT553
Part Status: Active
Supplier Device Package: SOT-553
Resistor - Emitter Base (R2): 22kOhms
Resistor - Base (R1): 22kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 500mW
Transistor Type: 1 NPN, 1 PNP - Pre - Biased (Base-Collector Junction)
Mounting Type: Surface Mount
Package / Case: SOT-553
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Grade: Automotive
Produkt ist nicht verfügbar
Mindestbestellmenge: 4000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVMMBT5087LT1G |
![]() |
Hersteller: onsemi
Description: TRANS PNP 50V 0.05A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: TRANS PNP 50V 0.05A SOT23-3
Qualification: AEC-Q101
Grade: Automotive
Power - Max: 225 mW
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 50 mA
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Frequency - Transition: 40MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 250 @ 100µA, 5V
Current - Collector Cutoff (Max): 50nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 300mV @ 1mA, 10mA
Operating Temperature: -55°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 123000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.12 EUR |
| 6000+ | 0.11 EUR |
| NSVMUN5312DW1T2G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 60 @ 5mA, 10V
Resistor - Base (R1): 22kOhms
Resistor - Emitter Base (R2): 22kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVMUN5316DW1T1G |
![]() |
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Tape & Reel (TR)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 250mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 160 @ 5mA, 10V
Resistor - Base (R1): 4.7kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.1 EUR |
| 6000+ | 0.09 EUR |
| NSVR0240HT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 40V 250MA SOD323
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 710 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 4pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.092 EUR |
| 6000+ | 0.082 EUR |
| 9000+ | 0.077 EUR |
| NSVR0340HT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 250MA SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE SCHOTTKY 40V 250MA SOD323
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 6 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 590 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 250mA
Capacitance @ Vr, F: 6pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 5 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NSVR05F40NXT5G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 40V 500MA 2DSN
Packaging: Tape & Reel (TR)
Package / Case: 0402 (1006 Metric)
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 35pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 2-DSN (1x0.6), (0402)
Operating Temperature - Junction: -40°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 460 mV @ 500 mA
Current - Reverse Leakage @ Vr: 75 µA @ 40 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 5000+ | 0.21 EUR |
| 10000+ | 0.19 EUR |
| NSVRB751V40T1G |
![]() |
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 30MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
Description: DIODE SCHOTTKY 30V 30MA SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 500 nA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 370 mV @ 1 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 30mA
Capacitance @ Vr, F: 2.5pF @ 1V, 1MHz
Technology: Schottky
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Tape & Reel (TR)
auf Bestellung 18000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.065 EUR |
| 6000+ | 0.057 EUR |
| 15000+ | 0.052 EUR |
| NTLUS3C18PZTAG |
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Hersteller: onsemi
Description: MOSFET P-CH 12V 4.4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 4.4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTLUS3C18PZTBG |
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Hersteller: onsemi
Description: MOSFET P-CH 12V 4.4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Description: MOSFET P-CH 12V 4.4A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 1570 pF @ 6 V
Gate Charge (Qg) (Max) @ Vgs: 15.8 nC @ 4.5 V
Drain to Source Voltage (Vdss): 12 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Obsolete
Supplier Device Package: 6-UDFN (1.6x1.6)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 660mW (Ta)
Rds On (Max) @ Id, Vgs: 24mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 4.4A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-PowerUFDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFD4C85NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.13W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Description: MOSFET 2N-CH 30V 15.4A 8DFN
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 32nC @ 10V
Rds On (Max) @ Id, Vgs: 3mOhm @ 20A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1960pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 15.4A, 29.7A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.13W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Produkt ist nicht verfügbar
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Stück im Wert von UAH
| NTMFD4C86NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 11.3A 8DFN
Part Status: Obsolete
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1153pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.3A, 18.1A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFD4C87NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 30A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.9A
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFD4C88NT1G |
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Hersteller: onsemi
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 30V 11.7A 8DFN
Supplier Device Package: 8-DFN (5x6)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 22.2nC @ 10V
Rds On (Max) @ Id, Vgs: 5.4mOhm @ 10A, 10V
Input Capacitance (Ciss) (Max) @ Vds: 1252pF @ 15V
Current - Continuous Drain (Id) @ 25°C: 11.7A, 14.2A
Drain to Source Voltage (Vdss): 30V
Power - Max: 1.1W
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual) Asymmetrical
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4982NFT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 26.5A/207A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 6000 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 84 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 1mA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 25A, 10V
Current - Continuous Drain (Id) @ 25°C: 26.5A (Ta), 207A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C01NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 47A/303A 5DFN
Description: MOSFET N-CH 30V 47A/303A 5DFN
Produkt ist nicht verfügbar
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| NTMFS4C03NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/136A 5DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
FET Type: N-Channel
Description: MOSFET N-CH 30V 30A/136A 5DFN
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 3071 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 45.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 64W (Tc)
Rds On (Max) @ Id, Vgs: 2.1mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 136A (Tc)
FET Type: N-Channel
auf Bestellung 1500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 0.94 EUR |
| NTMFS4C05NT1G-001 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A/78A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11.9A/78A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta), 78A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C06NT1G-001 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 11A/69A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 770mW (Ta)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C09NT1G-001 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 9A/52A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 9A/52A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 22.2 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Power Dissipation (Max): 760mW (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 52A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4C10NT1G-001 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A/46A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 30V 8.2A/46A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 18.6 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Power Dissipation (Max): 750mW (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4H01NFT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 25V 54A/334A 5DFN
Description: MOSFET N-CH 25V 54A/334A 5DFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 1500 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS4H02NFT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 25V 37A/193A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V
Description: MOSFET N-CH 25V 37A/193A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 37A (Ta), 193A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 30A, 10V
Power Dissipation (Max): 3.13W (Ta), 83W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 25 V
Gate Charge (Qg) (Max) @ Vgs: 40.9 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2652 pF @ 12 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NTMFS5C404NLT1G |
![]() |
Hersteller: onsemi
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Description: MOSFET N-CH 40V 52A/370A 5DFN
Input Capacitance (Ciss) (Max) @ Vds: 12168 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 181 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Part Status: Active
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 167W (Tc)
Rds On (Max) @ Id, Vgs: 0.75mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 52A (Ta), 370A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerTDFN, 5 Leads
Packaging: Tape & Reel (TR)
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
auf Bestellung 240000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1500+ | 4.5 EUR |


























