5HN01M-TL-E onsemi
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Packaging: Bulk
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Power Dissipation (Max): 150mW (Ta)
Supplier Device Package: MCP
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 50 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Produktrezensionen
Produktbewertung abgeben
Technische Details 5HN01M-TL-E onsemi
Description: MOSFET N-CH 50V 100MA 3MCP, Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V, Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V, Drain to Source Voltage (Vdss): 50 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: MCP, Power Dissipation (Max): 150mW (Ta), Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V, Current - Continuous Drain (Id) @ 25°C: 100mA (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: SC-70, SOT-323, Packaging: Tape & Reel (TR).
Weitere Produktangebote 5HN01M-TL-E
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
|
|
5HN01M-TL-E | onsemi |
Description: MOSFET N-CH 50V 100MA 3MCP Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V Drain to Source Voltage (Vdss): 50 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: MCP Power Dissipation (Max): 150mW (Ta) Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V Current - Continuous Drain (Id) @ 25°C: 100mA (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: SC-70, SOT-323 Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| 5HN01M-TL-E |
|
Hersteller: onsemi
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 50V 100MA 3MCP
Input Capacitance (Ciss) (Max) @ Vds: 6.2 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 1.4 nC @ 10 V
Drain to Source Voltage (Vdss): 50 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: MCP
Power Dissipation (Max): 150mW (Ta)
Rds On (Max) @ Id, Vgs: 7.5Ohm @ 50mA, 10V
Current - Continuous Drain (Id) @ 25°C: 100mA (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: SC-70, SOT-323
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH