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Technische Details EMH2418R-TL-H ON Semiconductor
Description: MOSFET 2N-CH 24V 9A SOT383FL, Supplier Device Package: SOT-383FL, EMH8, Vgs(th) (Max) @ Id: 1.3V @ 1mA, FET Feature: Logic Level Gate, 2.5V Drive, Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V, Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V, Current - Continuous Drain (Id) @ 25°C: 9A, Drain to Source Voltage (Vdss): 24V, Power - Max: 1.3W, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Configuration: 2 N-Channel (Dual) Common Drain, Mounting Type: Surface Mount, Package / Case: 8-SMD, Flat Lead, Packaging: Tape & Reel (TR).
Weitere Produktangebote EMH2418R-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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EMH2418R-TL-H | onsemi |
 Description: MOSFET 2N-CH 24V 9A SOT383FLSupplier Device Package: SOT-383FL, EMH8 Vgs(th) (Max) @ Id: 1.3V @ 1mA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A Drain to Source Voltage (Vdss): 24V Power - Max: 1.3W Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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|
EMH2418R-TL-H | onsemi |
Description: MOSFET 2N-CH 24V 9A SOT383FL Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Configuration: 2 N-Channel (Dual) Common Drain Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Cut Tape (CT) Supplier Device Package: SOT-383FL, EMH8 Vgs(th) (Max) @ Id: 1.3V @ 1mA FET Feature: Logic Level Gate, 2.5V Drive Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V Current - Continuous Drain (Id) @ 25°C: 9A Drain to Source Voltage (Vdss): 24V Power - Max: 1.3W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| EMH2418R-TL-H |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 24V 9A SOT383FL
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: MOSFET 2N-CH 24V 9A SOT383FL
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| EMH2418R-TL-H |
|
Hersteller: onsemi
Description: MOSFET 2N-CH 24V 9A SOT383FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Description: MOSFET 2N-CH 24V 9A SOT383FL
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Configuration: 2 N-Channel (Dual) Common Drain
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Cut Tape (CT)
Supplier Device Package: SOT-383FL, EMH8
Vgs(th) (Max) @ Id: 1.3V @ 1mA
FET Feature: Logic Level Gate, 2.5V Drive
Gate Charge (Qg) (Max) @ Vgs: 4.4nC @ 4.5V
Rds On (Max) @ Id, Vgs: 15mOhm @ 4A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 9A
Drain to Source Voltage (Vdss): 24V
Power - Max: 1.3W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH