CPH3462-TL-W onsemi
Hersteller: onsemi
Description: MOSFET N-CH 100V 1A 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
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Technische Details CPH3462-TL-W onsemi
Description: MOSFET N-CH 100V 1A 3CPH, Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 20 V, Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V, Drain to Source Voltage (Vdss): 100 V, Vgs (Max): ±20V, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Supplier Device Package: 3-CPH, Vgs(th) (Max) @ Id: 2.6V @ 1mA, Power Dissipation (Max): 1W (Ta), Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V, Current - Continuous Drain (Id) @ 25°C: 1A (Ta), FET Type: N-Channel, Technology: MOSFET (Metal Oxide), Operating Temperature: 150°C (TJ), Mounting Type: Surface Mount, Package / Case: TO-236-3, SC-59, SOT-23-3, Packaging: Tape & Reel (TR).
Weitere Produktangebote CPH3462-TL-W
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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CPH3462-TL-W | onsemi |
Description: MOSFET N-CH 100V 1A 3CPH Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: 3-CPH Vgs(th) (Max) @ Id: 2.6V @ 1mA Power Dissipation (Max): 1W (Ta) Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V Current - Continuous Drain (Id) @ 25°C: 1A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
 |
CPH3462-TL-W | onsemi |
MOSFET NCH 1A 100V 500MOHMS CPH3 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| CPH3462-TL-W |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 1A 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 1A 3CPH
Input Capacitance (Ciss) (Max) @ Vds: 155 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 3.4 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: 3-CPH
Vgs(th) (Max) @ Id: 2.6V @ 1mA
Power Dissipation (Max): 1W (Ta)
Rds On (Max) @ Id, Vgs: 785mOhm @ 1A, 10V
Current - Continuous Drain (Id) @ 25°C: 1A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| CPH3462-TL-W |
|
Hersteller: onsemi
MOSFET NCH 1A 100V 500MOHMS CPH3
MOSFET NCH 1A 100V 500MOHMS CPH3
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH