Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
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FSL336LRLX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD (7 Leads), Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 7-LSOP Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Power (Watts): 20 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MCT623SD | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FAN6602RM6X | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 25V Supplier Device Package: SOT-23-6 Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Obsolete Power (Watts): 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FCD2250N80Z | onsemi |
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Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMC8321LDC | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc) Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V Power Dissipation (Max): 2.9W (Ta), 56W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Dual Cool ™ 33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V |
auf Bestellung 54231 Stücke: Lieferzeit 10-14 Tag (e) |
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FODM8801CR2V | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-SOIC (0.173", 4.40mm Width) Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C Voltage - Forward (Vf) (Typ): 1.35V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 3750Vrms Current Transfer Ratio (Min): 200% @ 1mA Vce Saturation (Max): 400mV Current Transfer Ratio (Max): 400% @ 1mA Supplier Device Package: 4-Mini-Flat Voltage - Output (Max): 75V Turn On / Turn Off Time (Typ): 6µs, 6µs Rise / Fall Time (Typ): 5µs, 5.5µs Number of Channels: 1 Current - DC Forward (If) (Max): 20 mA |
auf Bestellung 121930 Stücke: Lieferzeit 10-14 Tag (e) |
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FSL336LRLX | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD (7 Leads), Gull Wing Mounting Type: Surface Mount Operating Temperature: -40°C ~ 125°C (TJ) Frequency - Switching: 50kHz Internal Switch(s): Yes Voltage - Breakdown: 650V Output Isolation: Non-Isolated Topology: Buck, Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 26V Supplier Device Package: 7-LSOP Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage Voltage - Start Up: 8 V Power (Watts): 20 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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MCT623SD | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -55°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.2V Input Type: DC Current - Output / Channel: 30mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 100% @ 5mA Vce Saturation (Max): 400mV Supplier Device Package: 8-SMD Voltage - Output (Max): 30V Turn On / Turn Off Time (Typ): 3µs, 3µs Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 60 mA |
auf Bestellung 91 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN6602RM6X | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOT-23-6 Mounting Type: Surface Mount Operating Temperature: -40°C ~ 105°C (TA) Duty Cycle: 75% Frequency - Switching: 65kHz Internal Switch(s): No Output Isolation: Isolated Topology: Flyback Voltage - Supply (Vcc/Vdd): 7V ~ 25V Supplier Device Package: SOT-23-6 Fault Protection: Current Limiting, Over Temperature, Over Voltage Voltage - Start Up: 16 V Part Status: Obsolete Power (Watts): 40 W |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NB3W1900LMNG | onsemi |
![]() Packaging: Tray Package / Case: 72-VFQFN Exposed Pad Mounting Type: Surface Mount Output: HCSL Frequency - Max: 133MHz Input: HCSL Operating Temperature: 0°C ~ 70°C Voltage - Supply: 3.135V ~ 3.465V Ratio - Input:Output: 1:19 Differential - Input:Output: Yes/Yes Supplier Device Package: 72-QFN (10x10) PLL: Yes with Bypass Divider/Multiplier: No/No Number of Circuits: 1 DigiKey Programmable: Not Verified |
Produkt ist nicht verfügbar |
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STK541UC62K-E | onsemi |
![]() Packaging: Tube Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads Mounting Type: Through Hole Type: IGBT Configuration: 3 Phase Voltage - Isolation: 2000Vrms Current: 10 A Voltage: 600 V |
auf Bestellung 697 Stücke: Lieferzeit 10-14 Tag (e) |
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STK5Q4U362J-E | onsemi |
![]() Packaging: Tube Features: Status Flag Package / Case: 38-DIP Module, 24 Leads Mounting Type: Through Hole Interface: Logic Operating Temperature: 150°C (TJ) Output Configuration: Half Bridge (3) Voltage - Supply: 12.5V ~ 17.5V Applications: AC Motors Current - Output / Channel: 10A Current - Peak Output: 20A Technology: IGBT Voltage - Load: 400V (Max) Fault Protection: Current Limiting, UVLO Load Type: Inductive |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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ESD8011MUT5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 34W Power Line Protection: No Part Status: Active |
auf Bestellung 28000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCL30030B1DR2G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting, Signage Internal Switch(s): No Topology: Flyback Supplier Device Package: 16-SOIC Voltage - Supply (Min): 9V Voltage - Supply (Max): 30V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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TF412ST5G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 8000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AMX300TCG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 900 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 47dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NCV8152MX330180TCG | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 6-XFDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA, 150mA Operating Temperature: -40°C ~ 125°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 100 µA Voltage - Input (Max): 5.25V Number of Regulators: 2 Supplier Device Package: 6-XDFN (1.2x1.2) Voltage - Output (Min/Fixed): 1.8V, 3.3V Control Features: Enable Part Status: Active PSRR: 75dB (1kHz) Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA Protection Features: Over Current, Over Temperature Current - Supply (Max): 200 µA Grade: Automotive Qualification: AEC-Q100 |
auf Bestellung 5000 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVTS245ESFT1G | onsemi |
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Produkt ist nicht verfügbar |
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NTMFS4C05NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 770mW (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V |
auf Bestellung 7500 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C10NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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NTS245SFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 120 µA @ 45 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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NTS260SFT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Grade: Automotive Voltage - DC Reverse (Vr) (Max): 60 V Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A Current - Reverse Leakage @ Vr: 50 µA @ 45 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
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NVE4153NT1G | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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ESD8011MUT5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 0201 (0603 Metric) Mounting Type: Surface Mount Type: Zener Operating Temperature: -55°C ~ 125°C (TJ) Applications: General Purpose Capacitance @ Frequency: 0.1pF @ 1MHz Current - Peak Pulse (10/1000µs): 3.6A (8/20µs) Voltage - Reverse Standoff (Typ): 5.5V (Max) Supplier Device Package: 2-X3DFN (0.6x0.3) (0201) Bidirectional Channels: 1 Voltage - Breakdown (Min): 6.5V Voltage - Clamping (Max) @ Ipp: 19V Power - Peak Pulse: 34W Power Line Protection: No Part Status: Active |
auf Bestellung 33679 Stücke: Lieferzeit 10-14 Tag (e) |
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NCL30030B1DR2G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads Mounting Type: Surface Mount Number of Outputs: 1 Type: AC DC Offline Switcher Operating Temperature: -40°C ~ 125°C (TJ) Applications: Lighting, Signage Internal Switch(s): No Topology: Flyback Supplier Device Package: 16-SOIC Voltage - Supply (Min): 9V Voltage - Supply (Max): 30V |
auf Bestellung 2470 Stücke: Lieferzeit 10-14 Tag (e) |
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TF412ST5G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 3-XFDFN Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) FET Type: N-Channel Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V Voltage - Breakdown (V(BR)GSS): 30 V Current Drain (Id) - Max: 10 mA Supplier Device Package: SOT-883 (XDFN3) (1x0.6) Part Status: Active Drain to Source Voltage (Vdss): 30 V Power - Max: 100 mW Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V |
auf Bestellung 11273 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP170AMX300TCG | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 4-XDFN Exposed Pad Output Type: Fixed Mounting Type: Surface Mount Current - Output: 150mA Operating Temperature: -40°C ~ 85°C (TJ) Output Configuration: Positive Current - Quiescent (Iq): 900 nA Voltage - Input (Max): 5.5V Number of Regulators: 1 Supplier Device Package: 4-XDFN (1x1) Voltage - Output (Min/Fixed): 3V Control Features: Enable PSRR: 47dB (1kHz) Voltage Dropout (Max): 0.26V @ 150mA Protection Features: Over Current, Over Temperature |
auf Bestellung 6995 Stücke: Lieferzeit 10-14 Tag (e) |
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NRVTS245ESFT1G | onsemi |
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Produkt ist nicht verfügbar |
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NTMFS4C05NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta) Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V Power Dissipation (Max): 770mW (Ta), 33W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V |
auf Bestellung 8770 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C10NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta) Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V Power Dissipation (Max): 750mW (Ta), 23.6W (Tc) Vgs(th) (Max) @ Id: 2.2V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V |
auf Bestellung 1961 Stücke: Lieferzeit 10-14 Tag (e) |
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NTS245SFT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SOD-123F Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Current - Average Rectified (Io): 2A Supplier Device Package: SOD-123FL Operating Temperature - Junction: -65°C ~ 150°C Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A Current - Reverse Leakage @ Vr: 120 µA @ 45 V |
auf Bestellung 5362 Stücke: Lieferzeit 10-14 Tag (e) |
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NVE4153NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: SC-89, SOT-490 Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 915mA (Ta) Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V Power Dissipation (Max): 300mW (Tj) Vgs(th) (Max) @ Id: 1.1V @ 250µA Supplier Device Package: SC-89-3 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V Vgs (Max): ±6V Drain to Source Voltage (Vdss): 20 V Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V Grade: Automotive Qualification: AEC-Q101 |
auf Bestellung 9539 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C06NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc) Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V Power Dissipation (Max): 770mW (Ta), 30.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V |
auf Bestellung 2179 Stücke: Lieferzeit 10-14 Tag (e) |
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NTMFS4C09NT1G | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN, 5 Leads Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta) Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V Power Dissipation (Max): 760mW (Ta), 25.5W (Tc) Vgs(th) (Max) @ Id: 2.1V @ 250µA Supplier Device Package: 5-DFN (5x6) (8-SOFL) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V |
auf Bestellung 5310 Stücke: Lieferzeit 10-14 Tag (e) |
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FGA6560WDF | onsemi |
![]() Packaging: Tube Package / Case: TO-3P-3, SC-65-3 Mounting Type: Through Hole Operating Temperature: -55°C ~ 175°C (TJ) Input Type: Standard Reverse Recovery Time (trr): 110 ns Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A Supplier Device Package: TO-3PN IGBT Type: Trench Field Stop Td (on/off) @ 25°C: 25.6ns/71ns Switching Energy: 2.46mJ (on), 520µJ (off) Test Condition: 400V, 60A, 6Ohm, 15V Gate Charge: 84 nC Current - Collector (Ic) (Max): 120 A Voltage - Collector Emitter Breakdown (Max): 650 V Current - Collector Pulsed (Icm): 180 A Power - Max: 306 W |
Produkt ist nicht verfügbar |
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FDMC86160ET100 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V |
auf Bestellung 24000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260ET150 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86340ET80 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMC86570LET60 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 15000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86255ET150 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Power Dissipation (Max): 3.3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86350ET80 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V |
auf Bestellung 21000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86550ET60 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86202ET120 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86160ET100 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc) Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V |
auf Bestellung 27583 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86260ET150 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc) Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V |
auf Bestellung 6265 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86340ET80 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power33 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V |
auf Bestellung 555 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86570LET60 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc) Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V Power Dissipation (Max): 2.8W (Ta), 65W (Tc) Vgs(th) (Max) @ Id: 3V @ 250µA Supplier Device Package: Power33 Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V |
auf Bestellung 3156 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86150ET100 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc) Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 100 V Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V |
auf Bestellung 19538 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86255ET150 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc) Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V Power Dissipation (Max): 3.3W (Ta), 136W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V |
auf Bestellung 257 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86350ET80 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc) Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V |
auf Bestellung 21887 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86550ET60 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc) Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4.5V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 8V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDMS86202ET120 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc) Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V Power Dissipation (Max): 3.3W (Ta), 187W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-PQFN (5x6) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 120 V Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V |
auf Bestellung 9920 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0065N40 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0090N40 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
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FDBL0630N150 | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V Power Dissipation (Max): 500W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||||
FSA551UCX | onsemi |
![]() Packaging: Tape & Reel (TR) Package / Case: 9-UFBGA, WLCSP Mounting Type: Surface Mount Operating Temperature: -40°C ~ 85°C (TA) Applications: Audio On-State Resistance (Max): 600mOhm -3db Bandwidth: 240MHz Supplier Device Package: 9-WLCSP (1.22x1.22) Voltage - Supply, Single (V+): 1.5V ~ 3V Switch Circuit: SPST Multiplexer/Demultiplexer Circuit: 1:1 Number of Channels: 2 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||||
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FDBL0065N40 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V |
auf Bestellung 7075 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0090N40 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 240A (Tc) Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V Power Dissipation (Max): 357W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 40 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V |
auf Bestellung 60 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0630N150 | onsemi |
![]() Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 169A (Tc) Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V Power Dissipation (Max): 500W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V |
auf Bestellung 560 Stücke: Lieferzeit 10-14 Tag (e) |
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FSL336LRLX |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 20 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
MCT623SD |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FAN6602RM6X |
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Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Power (Watts): 40 W
Description: IC OFFLINE SW FLYBACK SOT23-6
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Power (Watts): 40 W
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FCD2250N80Z |
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Hersteller: onsemi
Description: MOSFET N-CH 800V 2.6A DPAK
Description: MOSFET N-CH 800V 2.6A DPAK
Produkt ist nicht verfügbar
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FDMC8321LDC |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 27A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
Description: MOSFET N-CH 40V 27A DLCOOL33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 27A (Ta), 108A (Tc)
Rds On (Max) @ Id, Vgs: 2.5mOhm @ 27A, 10V
Power Dissipation (Max): 2.9W (Ta), 56W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Dual Cool ™ 33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 60 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 3965 pF @ 20 V
auf Bestellung 54231 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.26 EUR |
10+ | 2.47 EUR |
100+ | 2 EUR |
500+ | 1.83 EUR |
1000+ | 1.67 EUR |
FODM8801CR2V |
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Hersteller: onsemi
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
Description: OPTOISO 3.75KV TRANS 4-MINI-FLAT
Packaging: Cut Tape (CT)
Package / Case: 4-SOIC (0.173", 4.40mm Width)
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C
Voltage - Forward (Vf) (Typ): 1.35V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 3750Vrms
Current Transfer Ratio (Min): 200% @ 1mA
Vce Saturation (Max): 400mV
Current Transfer Ratio (Max): 400% @ 1mA
Supplier Device Package: 4-Mini-Flat
Voltage - Output (Max): 75V
Turn On / Turn Off Time (Typ): 6µs, 6µs
Rise / Fall Time (Typ): 5µs, 5.5µs
Number of Channels: 1
Current - DC Forward (If) (Max): 20 mA
auf Bestellung 121930 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
6+ | 3.22 EUR |
10+ | 2.3 EUR |
100+ | 1.76 EUR |
500+ | 1.52 EUR |
1000+ | 1.44 EUR |
FSL336LRLX |
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Hersteller: onsemi
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 20 W
Description: IC OFFLINE SWITCH MULT TOP 7LSOP
Packaging: Cut Tape (CT)
Package / Case: 8-SMD (7 Leads), Gull Wing
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 125°C (TJ)
Frequency - Switching: 50kHz
Internal Switch(s): Yes
Voltage - Breakdown: 650V
Output Isolation: Non-Isolated
Topology: Buck, Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 26V
Supplier Device Package: 7-LSOP
Fault Protection: Current Limiting, Open Loop, Over Load, Over Temperature, Over Voltage
Voltage - Start Up: 8 V
Power (Watts): 20 W
Produkt ist nicht verfügbar
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MCT623SD |
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Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.2V
Input Type: DC
Current - Output / Channel: 30mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 100% @ 5mA
Vce Saturation (Max): 400mV
Supplier Device Package: 8-SMD
Voltage - Output (Max): 30V
Turn On / Turn Off Time (Typ): 3µs, 3µs
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 60 mA
auf Bestellung 91 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8+ | 2.46 EUR |
11+ | 1.75 EUR |
FAN6602RM6X |
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Hersteller: onsemi
Description: IC OFFLINE SW FLYBACK SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Power (Watts): 40 W
Description: IC OFFLINE SW FLYBACK SOT23-6
Packaging: Cut Tape (CT)
Package / Case: SOT-23-6
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 105°C (TA)
Duty Cycle: 75%
Frequency - Switching: 65kHz
Internal Switch(s): No
Output Isolation: Isolated
Topology: Flyback
Voltage - Supply (Vcc/Vdd): 7V ~ 25V
Supplier Device Package: SOT-23-6
Fault Protection: Current Limiting, Over Temperature, Over Voltage
Voltage - Start Up: 16 V
Part Status: Obsolete
Power (Watts): 40 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NB3W1900LMNG |
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Hersteller: onsemi
Description: IC CLOCK ZDB FANOUT BUFFER 72QFN
Packaging: Tray
Package / Case: 72-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 133MHz
Input: HCSL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:19
Differential - Input:Output: Yes/Yes
Supplier Device Package: 72-QFN (10x10)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Description: IC CLOCK ZDB FANOUT BUFFER 72QFN
Packaging: Tray
Package / Case: 72-VFQFN Exposed Pad
Mounting Type: Surface Mount
Output: HCSL
Frequency - Max: 133MHz
Input: HCSL
Operating Temperature: 0°C ~ 70°C
Voltage - Supply: 3.135V ~ 3.465V
Ratio - Input:Output: 1:19
Differential - Input:Output: Yes/Yes
Supplier Device Package: 72-QFN (10x10)
PLL: Yes with Bypass
Divider/Multiplier: No/No
Number of Circuits: 1
DigiKey Programmable: Not Verified
Produkt ist nicht verfügbar
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STK541UC62K-E |
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Hersteller: onsemi
Description: MOD IPM 600V 10A 23PWRSIP
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
Description: MOD IPM 600V 10A 23PWRSIP
Packaging: Tube
Package / Case: 23-PowerSIP Module, 19 Leads, Formed Leads
Mounting Type: Through Hole
Type: IGBT
Configuration: 3 Phase
Voltage - Isolation: 2000Vrms
Current: 10 A
Voltage: 600 V
auf Bestellung 697 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1+ | 39.53 EUR |
16+ | 27.01 EUR |
104+ | 23.32 EUR |
STK5Q4U362J-E |
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Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER 10A
Packaging: Tube
Features: Status Flag
Package / Case: 38-DIP Module, 24 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 400V (Max)
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Description: IC HALF BRIDGE DRIVER 10A
Packaging: Tube
Features: Status Flag
Package / Case: 38-DIP Module, 24 Leads
Mounting Type: Through Hole
Interface: Logic
Operating Temperature: 150°C (TJ)
Output Configuration: Half Bridge (3)
Voltage - Supply: 12.5V ~ 17.5V
Applications: AC Motors
Current - Output / Channel: 10A
Current - Peak Output: 20A
Technology: IGBT
Voltage - Load: 400V (Max)
Fault Protection: Current Limiting, UVLO
Load Type: Inductive
Produkt ist nicht verfügbar
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ESD8011MUT5G |
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Hersteller: onsemi
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 34W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Packaging: Tape & Reel (TR)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 34W
Power Line Protection: No
Part Status: Active
auf Bestellung 28000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10000+ | 0.13 EUR |
20000+ | 0.12 EUR |
NCL30030B1DR2G |
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Hersteller: onsemi
Description: IC LED DRIVER OFFL 500MA 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
Description: IC LED DRIVER OFFL 500MA 16SOIC
Packaging: Tape & Reel (TR)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
Produkt ist nicht verfügbar
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TF412ST5G |
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Hersteller: onsemi
Description: JFET N-CH 30V 10MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 30V 10MA SOT883
Packaging: Tape & Reel (TR)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 8000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
8000+ | 0.13 EUR |
NCP170AMX300TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 3V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA 4XDFN
Packaging: Tape & Reel (TR)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.22 EUR |
NCV8152MX330180TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 1.8V/3.3V 6XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
Description: IC REG LINEAR 1.8V/3.3V 6XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 5000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
5000+ | 0.32 EUR |
NRVTS245ESFT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS4C05NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
1500+ | 0.6 EUR |
3000+ | 0.55 EUR |
4500+ | 0.53 EUR |
7500+ | 0.5 EUR |
NTMFS4C10NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTS245SFT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.15 EUR |
NTS260SFT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: AEC-Q101
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NVE4153NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 915MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 0.26 EUR |
6000+ | 0.24 EUR |
ESD8011MUT5G |
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Hersteller: onsemi
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 34W
Power Line Protection: No
Part Status: Active
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 34W
Power Line Protection: No
Part Status: Active
auf Bestellung 33679 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
38+ | 0.48 EUR |
66+ | 0.27 EUR |
100+ | 0.2 EUR |
500+ | 0.17 EUR |
1000+ | 0.15 EUR |
NCL30030B1DR2G |
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Hersteller: onsemi
Description: IC LED DRIVER OFFL 500MA 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
Description: IC LED DRIVER OFFL 500MA 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.24 EUR |
10+ | 3.33 EUR |
25+ | 2.83 EUR |
100+ | 2.27 EUR |
250+ | 1.99 EUR |
500+ | 1.82 EUR |
1000+ | 1.67 EUR |
TF412ST5G |
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Hersteller: onsemi
Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 11273 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
25+ | 0.72 EUR |
36+ | 0.49 EUR |
100+ | 0.31 EUR |
500+ | 0.24 EUR |
1000+ | 0.2 EUR |
2000+ | 0.19 EUR |
NCP170AMX300TCG |
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Hersteller: onsemi
Description: IC REG LINEAR 3V 150MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3V 150MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 6995 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
24+ | 0.74 EUR |
29+ | 0.62 EUR |
31+ | 0.58 EUR |
100+ | 0.43 EUR |
250+ | 0.37 EUR |
500+ | 0.35 EUR |
1000+ | 0.26 EUR |
2500+ | 0.24 EUR |
NRVTS245ESFT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
NTMFS4C05NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
auf Bestellung 8770 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
9+ | 2.13 EUR |
14+ | 1.34 EUR |
100+ | 0.89 EUR |
500+ | 0.69 EUR |
NTMFS4C10NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 1961 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
13+ | 1.36 EUR |
20+ | 0.92 EUR |
100+ | 0.66 EUR |
500+ | 0.52 EUR |
NTS245SFT1G |
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Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
auf Bestellung 5362 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
32+ | 0.56 EUR |
41+ | 0.44 EUR |
100+ | 0.26 EUR |
500+ | 0.24 EUR |
1000+ | 0.17 EUR |
NVE4153NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 20V 915MA SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 9539 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
20+ | 0.92 EUR |
29+ | 0.61 EUR |
100+ | 0.42 EUR |
500+ | 0.33 EUR |
1000+ | 0.3 EUR |
NTMFS4C06NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 2179 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
12+ | 1.57 EUR |
17+ | 1.07 EUR |
100+ | 0.75 EUR |
500+ | 0.62 EUR |
NTMFS4C09NT1G |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
auf Bestellung 5310 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
10+ | 1.83 EUR |
16+ | 1.15 EUR |
100+ | 0.75 EUR |
500+ | 0.58 EUR |
FGA6560WDF |
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Hersteller: onsemi
Description: IGBT TRENCH/FS 650V 120A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25.6ns/71ns
Switching Energy: 2.46mJ (on), 520µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 306 W
Description: IGBT TRENCH/FS 650V 120A TO3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25.6ns/71ns
Switching Energy: 2.46mJ (on), 520µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 306 W
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMC86160ET100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.8 EUR |
FDMC86260ET150 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.59 EUR |
FDMC86340ET80 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMC86570LET60 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 1.99 EUR |
FDMS86150ET100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 5.8 EUR |
FDMS86255ET150 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86350ET80 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 5.09 EUR |
FDMS86550ET60 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86202ET120 |
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Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
3000+ | 4.79 EUR |
FDMC86160ET100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 27583 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.49 EUR |
10+ | 3.58 EUR |
100+ | 2.49 EUR |
500+ | 2.02 EUR |
1000+ | 1.87 EUR |
FDMC86260ET150 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 6265 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.02 EUR |
10+ | 3.25 EUR |
100+ | 2.25 EUR |
500+ | 1.82 EUR |
1000+ | 1.69 EUR |
FDMC86340ET80 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.58 EUR |
10+ | 3.74 EUR |
100+ | 3.08 EUR |
500+ | 2.75 EUR |
FDMC86570LET60 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3156 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
4+ | 5.19 EUR |
10+ | 3.54 EUR |
100+ | 2.57 EUR |
500+ | 2.19 EUR |
1000+ | 2.03 EUR |
FDMS86150ET100 |
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Hersteller: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 19538 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 13.53 EUR |
10+ | 9.2 EUR |
100+ | 6.75 EUR |
500+ | 5.8 EUR |
FDMS86255ET150 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.19 EUR |
10+ | 7.43 EUR |
100+ | 5.46 EUR |
FDMS86350ET80 |
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Hersteller: onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
auf Bestellung 21887 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 12.14 EUR |
10+ | 8.23 EUR |
100+ | 6.01 EUR |
500+ | 5.09 EUR |
FDMS86550ET60 |
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Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDMS86202ET120 |
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Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
auf Bestellung 9920 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.7 EUR |
10+ | 7.9 EUR |
100+ | 5.74 EUR |
500+ | 4.82 EUR |
1000+ | 4.79 EUR |
FDBL0065N40 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2000+ | 5.15 EUR |
FDBL0090N40 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDBL0630N150 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FSA551UCX |
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Hersteller: onsemi
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 600mOhm
-3db Bandwidth: 240MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 600mOhm
-3db Bandwidth: 240MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
FDBL0065N40 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 7075 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 11.99 EUR |
10+ | 8.11 EUR |
100+ | 5.92 EUR |
500+ | 5.15 EUR |
FDBL0090N40 |
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Hersteller: onsemi
Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.1 EUR |
10+ | 8.18 EUR |
FDBL0630N150 |
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Hersteller: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
auf Bestellung 560 Stücke:
Lieferzeit 10-14 Tag (e)Anzahl | Preis |
---|---|
2+ | 9.42 EUR |
10+ | 6.61 EUR |
100+ | 5.17 EUR |