Produkte > ONSEMI > Alle Produkte des Herstellers ONSEMI (142701) > Seite 557 nach 2379

Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 552 553 554 555 556 557 558 559 560 561 562 711 948 1185 1422 1659 1896 2133 2370 2379  [ Nächste Seite >> ]
Foto Bezeichnung Hersteller Beschreibung Verfügbarkeit
Preis
NCV8152MX330180TCG NCV8152MX330180TCG onsemi ncv8152-d.pdf Description: IC REG LINEAR 1.8V/3.3V 6-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 765000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.15 EUR
10000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
NRVTS245ESFT1G NRVTS245ESFT1G onsemi nrvts245esf-d.pdf Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C05NT1G NTMFS4C05NT1G onsemi ntmfs4c05n-d.pdf Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
1500+0.44 EUR
3000+0.28 EUR
4500+0.27 EUR
7500+0.26 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C10NT1G NTMFS4C10NT1G onsemi ntmfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTS245SFT1G NTS245SFT1G onsemi nts245sf-d.pdf Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NTS260SFT1G NTS260SFT1G onsemi nts260sf-d.pdf Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVE4153NT1G NVE4153NT1G onsemi nta4153n-d.pdf Description: MOSFET N-CH 20V 915MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.22 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ESD8011MUT5G ESD8011MUT5G onsemi esd8011-d.pdf Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 34W
Power Line Protection: No
Part Status: Active
auf Bestellung 6049 Stücke:
Lieferzeit 10-14 Tag (e)
40+0.44 EUR
81+0.22 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
NCL30030B1DR2G NCL30030B1DR2G onsemi ncl30030-d.pdf Description: IC LED DRIVER OFFL 500MA 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.24 EUR
10+3.33 EUR
25+2.83 EUR
100+2.27 EUR
250+1.99 EUR
500+1.82 EUR
1000+1.67 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TF412ST5G TF412ST5G onsemi tf412s-d.pdf Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 91178 Stücke:
Lieferzeit 10-14 Tag (e)
23+0.77 EUR
37+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NCP170AMX300TCG NCP170AMX300TCG onsemi ncp170-d.pdf Description: IC REG LINEAR 3V 150MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 6995 Stücke:
Lieferzeit 10-14 Tag (e)
24+0.74 EUR
29+0.62 EUR
31+0.58 EUR
100+0.43 EUR
250+0.37 EUR
500+0.35 EUR
1000+0.26 EUR
2500+0.24 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
NRVTS245ESFT1G NRVTS245ESFT1G onsemi nrvts245esf-d.pdf Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C05NT1G NTMFS4C05NT1G onsemi ntmfs4c05n-d.pdf Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
auf Bestellung 8286 Stücke:
Lieferzeit 10-14 Tag (e)
19+0.97 EUR
25+0.73 EUR
100+0.48 EUR
500+0.43 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C10NT1G NTMFS4C10NT1G onsemi ntmfs4c10n-d.pdf Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)
18+0.99 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NTS245SFT1G NTS245SFT1G onsemi nts245sf-d.pdf Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
auf Bestellung 5362 Stücke:
Lieferzeit 10-14 Tag (e)
32+0.56 EUR
41+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
NVE4153NT1G NVE4153NT1G onsemi nta4153n-d.pdf Description: MOSFET N-CH 20V 915MA SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 54376 Stücke:
Lieferzeit 10-14 Tag (e)
15+1.18 EUR
25+0.72 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C06NT1G NTMFS4C06NT1G onsemi ntmfs4c06n-d.pdf Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 1875 Stücke:
Lieferzeit 10-14 Tag (e)
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C09NT1G NTMFS4C09NT1G onsemi ntmfs4c09n-d.pdf Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
auf Bestellung 5310 Stücke:
Lieferzeit 10-14 Tag (e)
10+1.83 EUR
16+1.15 EUR
100+0.75 EUR
500+0.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FGA6560WDF FGA6560WDF onsemi FGA6560WDF-D.pdf Description: IGBT TRENCH FS 650V 120A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25.6ns/71ns
Switching Energy: 2.46mJ (on), 520µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 306 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86160ET100 FDMC86160ET100 onsemi fdmc86160et100-d.pdf Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.8 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86260ET150 FDMC86260ET150 onsemi fdmc86260et150-d.pdf Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.59 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86340ET80 FDMC86340ET80 onsemi fdmc86340et80-d.pdf Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86570LET60 FDMC86570LET60 onsemi fdmc86570let60-d.pdf Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+1.99 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86150ET100 FDMS86150ET100 onsemi fdms86150et100-d.pdf Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.8 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86255ET150 FDMS86255ET150 onsemi fdms86255et150-d.pdf Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86350ET80 FDMS86350ET80 onsemi fdms86350et80-d.pdf Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+5.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86550ET60 FDMS86550ET60 onsemi fdms86550et60-d.pdf Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 FDMS86202ET120 onsemi fdms86202et120-d.pdf Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
3000+4.31 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86160ET100 FDMC86160ET100 onsemi fdmc86160et100-d.pdf Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 27583 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.49 EUR
10+3.58 EUR
100+2.49 EUR
500+2.02 EUR
1000+1.87 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86260ET150 FDMC86260ET150 onsemi fdmc86260et150-d.pdf Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 6265 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.02 EUR
10+3.25 EUR
100+2.25 EUR
500+1.82 EUR
1000+1.69 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86340ET80 FDMC86340ET80 onsemi fdmc86340et80-d.pdf Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.58 EUR
10+3.74 EUR
100+3.08 EUR
500+2.75 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86570LET60 FDMC86570LET60 onsemi fdmc86570let60-d.pdf Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3156 Stücke:
Lieferzeit 10-14 Tag (e)
4+5.19 EUR
10+3.54 EUR
100+2.57 EUR
500+2.19 EUR
1000+2.03 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86150ET100 FDMS86150ET100 onsemi fdms86150et100-d.pdf Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 19538 Stücke:
Lieferzeit 10-14 Tag (e)
2+13.53 EUR
10+9.2 EUR
100+6.75 EUR
500+5.8 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86255ET150 FDMS86255ET150 onsemi fdms86255et150-d.pdf Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.19 EUR
10+7.43 EUR
100+5.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86350ET80 FDMS86350ET80 onsemi fdms86350et80-d.pdf Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
auf Bestellung 21887 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.14 EUR
10+8.23 EUR
100+6.01 EUR
500+5.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86550ET60 FDMS86550ET60 onsemi fdms86550et60-d.pdf Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
2+12.8 EUR
10+8.73 EUR
100+6.85 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 FDMS86202ET120 onsemi fdms86202et120-d.pdf Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
auf Bestellung 8545 Stücke:
Lieferzeit 10-14 Tag (e)
2+10.54 EUR
10+7.11 EUR
100+5.27 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0065N40 FDBL0065N40 onsemi fdbl0065n40-d.pdf Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
2000+5.15 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0090N40 FDBL0090N40 onsemi fdbl0090n40-d.pdf Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0630N150 FDBL0630N150 onsemi fdbl0630n150-d.pdf Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSA551UCX onsemi fsa551-d.pdf Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 600mOhm
-3db Bandwidth: 240MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0065N40 FDBL0065N40 onsemi fdbl0065n40-d.pdf Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 7075 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.99 EUR
10+8.11 EUR
100+5.92 EUR
500+5.15 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0090N40 FDBL0090N40 onsemi fdbl0090n40-d.pdf Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.1 EUR
10+8.18 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0630N150 FDBL0630N150 onsemi fdbl0630n150-d.pdf Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
auf Bestellung 1428 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.56 EUR
10+6.76 EUR
100+5.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FSA551UCX onsemi fsa551-d.pdf Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 600mOhm
-3db Bandwidth: 240MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)
7+2.68 EUR
10+2.39 EUR
25+2.27 EUR
100+1.74 EUR
250+1.54 EUR
500+1.46 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NCS333SN2T1G NCS333SN2T1G onsemi ncs333-d.pdf Description: IC OPAMP ZERO-DRIFT 1 CIRC 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 105°C
Current - Supply: 17µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCS333SQ3T2G NCS333SQ3T2G onsemi ncs333-d.pdf Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 105°C
Current - Supply: 17µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMA6676PZ FDMA6676PZ onsemi fdma6676pz-d.pdf Description: MOSFET P-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 FGH40T65SHD-F155 onsemi fgh40t65shd-d.pdf Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
auf Bestellung 1879 Stücke:
Lieferzeit 10-14 Tag (e)
3+7.39 EUR
10+4.89 EUR
450+2.91 EUR
900+2.71 EUR
1350+2.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SHD-F155 FGH60T65SHD-F155 onsemi fgh60t65shd-d.pdf Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/87ns
Switching Energy: 1.69mJ (on), 630µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 349 W
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
2+9.15 EUR
30+5.19 EUR
120+4.32 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SHD-F155 FGH75T65SHD-F155 onsemi fgh75t65shd-d.pdf Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43.4 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/80ns
Switching Energy: 2.4mJ (on), 720µJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
auf Bestellung 2320 Stücke:
Lieferzeit 10-14 Tag (e)
2+11.3 EUR
30+6.52 EUR
120+5.47 EUR
510+4.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FPF1C2P5MF07AM onsemi Description: IGBT MODULE 620V 39A 231W F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: F1
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 620 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 25 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSV1045V FSV1045V onsemi fsv1045v-d.pdf Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.75 EUR
10000+0.73 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FSV1060V FSV1060V onsemi fsv1060v-d.pdf Description: DIODE SCHOTTKY 60V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
5000+0.72 EUR
10000+0.7 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2531M HCPL2531M onsemi hcpl2530m-d.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 11006 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.45 EUR
10+2.48 EUR
100+1.91 EUR
500+1.65 EUR
1000+1.57 EUR
2000+1.5 EUR
5000+1.42 EUR
10000+1.38 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2531SDVM HCPL2531SDVM onsemi hcpl2530m-d.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
1000+1.59 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2531VM HCPL2531VM onsemi hcpl2530m-d.pdf Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 71829 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.31 EUR
10+2.37 EUR
100+1.82 EUR
500+1.57 EUR
1000+1.49 EUR
2000+1.43 EUR
5000+1.35 EUR
10000+1.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RHRG1560CC-F085 RHRG1560CC-F085 onsemi Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RHRG1560-F085 RHRG1560-F085 onsemi ONSM-S-A0003589330-1.pdf?t.download=true&u=5oefqw Description: DIODE GEN PURP 600V 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RURP15100-F085 RURP15100-F085 onsemi rurp15100_f085-d.pdf Description: DIODE GEN PURP 1KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
6+3.13 EUR
10+2.81 EUR
100+2.26 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
NCV8152MX330180TCG ncv8152-d.pdf
NCV8152MX330180TCG
Hersteller: onsemi
Description: IC REG LINEAR 1.8V/3.3V 6-XDFN
Packaging: Tape & Reel (TR)
Package / Case: 6-XFDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA, 150mA
Operating Temperature: -40°C ~ 125°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 100 µA
Voltage - Input (Max): 5.25V
Number of Regulators: 2
Supplier Device Package: 6-XDFN (1.2x1.2)
Voltage - Output (Min/Fixed): 1.8V, 3.3V
Control Features: Enable
Part Status: Active
PSRR: 75dB (1kHz)
Voltage Dropout (Max): 0.42V @ 150mA, 0.24V @ 150mA
Protection Features: Over Current, Over Temperature
Current - Supply (Max): 200 µA
Grade: Automotive
Qualification: AEC-Q100
auf Bestellung 765000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.15 EUR
10000+0.14 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
NRVTS245ESFT1G nrvts245esf-d.pdf
NRVTS245ESFT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C05NT1G ntmfs4c05n-d.pdf
NTMFS4C05NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
auf Bestellung 7500 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1500+0.44 EUR
3000+0.28 EUR
4500+0.27 EUR
7500+0.26 EUR
Mindestbestellmenge: 1500
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C10NT1G ntmfs4c10n-d.pdf
NTMFS4C10NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTS245SFT1G nts245sf-d.pdf
NTS245SFT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.15 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
NTS260SFT1G nts260sf-d.pdf
NTS260SFT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 2A SOD123FL
Packaging: Tape & Reel (TR)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 650 mV @ 2 A
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NVE4153NT1G nta4153n-d.pdf
NVE4153NT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Packaging: Tape & Reel (TR)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+0.27 EUR
6000+0.25 EUR
9000+0.24 EUR
15000+0.23 EUR
21000+0.22 EUR
30000+0.21 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
ESD8011MUT5G esd8011-d.pdf
ESD8011MUT5G
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 19VC 2X3DFN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Type: Zener
Operating Temperature: -55°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.1pF @ 1MHz
Current - Peak Pulse (10/1000µs): 3.6A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: 2-X3DFN (0.6x0.3) (0201)
Bidirectional Channels: 1
Voltage - Breakdown (Min): 6.5V
Voltage - Clamping (Max) @ Ipp: 19V
Power - Peak Pulse: 34W
Power Line Protection: No
Part Status: Active
auf Bestellung 6049 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
40+0.44 EUR
81+0.22 EUR
100+0.18 EUR
500+0.16 EUR
1000+0.14 EUR
Mindestbestellmenge: 40
Im Einkaufswagen  Stück im Wert von  UAH
NCL30030B1DR2G ncl30030-d.pdf
NCL30030B1DR2G
Hersteller: onsemi
Description: IC LED DRIVER OFFL 500MA 16SOIC
Packaging: Cut Tape (CT)
Package / Case: 16-SOIC (0.154", 3.90mm Width), 15 Leads
Mounting Type: Surface Mount
Number of Outputs: 1
Type: AC DC Offline Switcher
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: Lighting, Signage
Internal Switch(s): No
Topology: Flyback
Supplier Device Package: 16-SOIC
Voltage - Supply (Min): 9V
Voltage - Supply (Max): 30V
auf Bestellung 2470 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.24 EUR
10+3.33 EUR
25+2.83 EUR
100+2.27 EUR
250+1.99 EUR
500+1.82 EUR
1000+1.67 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
TF412ST5G tf412s-d.pdf
TF412ST5G
Hersteller: onsemi
Description: JFET N-CH 30V 10MA SOT883
Packaging: Cut Tape (CT)
Package / Case: 3-XFDFN
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
FET Type: N-Channel
Input Capacitance (Ciss) (Max) @ Vds: 4pF @ 10V
Voltage - Breakdown (V(BR)GSS): 30 V
Current Drain (Id) - Max: 10 mA
Supplier Device Package: SOT-883 (XDFN3) (1x0.6)
Part Status: Active
Drain to Source Voltage (Vdss): 30 V
Power - Max: 100 mW
Voltage - Cutoff (VGS off) @ Id: 180 mV @ 1 µA
Current - Drain (Idss) @ Vds (Vgs=0): 1.2 mA @ 10 V
auf Bestellung 91178 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
23+0.77 EUR
37+0.48 EUR
100+0.3 EUR
500+0.23 EUR
1000+0.2 EUR
2000+0.18 EUR
Mindestbestellmenge: 23
Im Einkaufswagen  Stück im Wert von  UAH
NCP170AMX300TCG ncp170-d.pdf
NCP170AMX300TCG
Hersteller: onsemi
Description: IC REG LINEAR 3V 150MA 4XDFN
Packaging: Cut Tape (CT)
Package / Case: 4-XDFN Exposed Pad
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 150mA
Operating Temperature: -40°C ~ 85°C (TJ)
Output Configuration: Positive
Current - Quiescent (Iq): 900 nA
Voltage - Input (Max): 5.5V
Number of Regulators: 1
Supplier Device Package: 4-XDFN (1x1)
Voltage - Output (Min/Fixed): 3V
Control Features: Enable
PSRR: 47dB (1kHz)
Voltage Dropout (Max): 0.26V @ 150mA
Protection Features: Over Current, Over Temperature
auf Bestellung 6995 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
24+0.74 EUR
29+0.62 EUR
31+0.58 EUR
100+0.43 EUR
250+0.37 EUR
500+0.35 EUR
1000+0.26 EUR
2500+0.24 EUR
Mindestbestellmenge: 24
Im Einkaufswagen  Stück im Wert von  UAH
NRVTS245ESFT1G nrvts245esf-d.pdf
NRVTS245ESFT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C05NT1G ntmfs4c05n-d.pdf
NTMFS4C05NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 11.9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11.9A (Ta)
Rds On (Max) @ Id, Vgs: 3.4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 33W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 14 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1972 pF @ 15 V
auf Bestellung 8286 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
19+0.97 EUR
25+0.73 EUR
100+0.48 EUR
500+0.43 EUR
Mindestbestellmenge: 19
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C10NT1G ntmfs4c10n-d.pdf
NTMFS4C10NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 8.2A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 8.2A (Ta)
Rds On (Max) @ Id, Vgs: 6.95mOhm @ 30A, 10V
Power Dissipation (Max): 750mW (Ta), 23.6W (Tc)
Vgs(th) (Max) @ Id: 2.2V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 9.7 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 987 pF @ 15 V
auf Bestellung 1137 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
18+0.99 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
Mindestbestellmenge: 18
Im Einkaufswagen  Stück im Wert von  UAH
NTS245SFT1G nts245sf-d.pdf
NTS245SFT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 2A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 2A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -65°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 630 mV @ 2 A
Current - Reverse Leakage @ Vr: 120 µA @ 45 V
auf Bestellung 5362 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
32+0.56 EUR
41+0.44 EUR
100+0.26 EUR
500+0.24 EUR
1000+0.17 EUR
Mindestbestellmenge: 32
Im Einkaufswagen  Stück im Wert von  UAH
NVE4153NT1G nta4153n-d.pdf
NVE4153NT1G
Hersteller: onsemi
Description: MOSFET N-CH 20V 915MA SC89
Packaging: Cut Tape (CT)
Package / Case: SC-89, SOT-490
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 915mA (Ta)
Rds On (Max) @ Id, Vgs: 230mOhm @ 600mA, 4.5V
Power Dissipation (Max): 300mW (Tj)
Vgs(th) (Max) @ Id: 1.1V @ 250µA
Supplier Device Package: SC-89-3
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Vgs (Max): ±6V
Drain to Source Voltage (Vdss): 20 V
Gate Charge (Qg) (Max) @ Vgs: 1.82 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 110 pF @ 16 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 54376 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
15+1.18 EUR
25+0.72 EUR
100+0.47 EUR
500+0.35 EUR
1000+0.32 EUR
Mindestbestellmenge: 15
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C06NT1G ntmfs4c06n-d.pdf
NTMFS4C06NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 11A/69A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta), 69A (Tc)
Rds On (Max) @ Id, Vgs: 4mOhm @ 30A, 10V
Power Dissipation (Max): 770mW (Ta), 30.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 26 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1683 pF @ 15 V
auf Bestellung 1875 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
12+1.48 EUR
20+0.92 EUR
100+0.6 EUR
500+0.46 EUR
Mindestbestellmenge: 12
Im Einkaufswagen  Stück im Wert von  UAH
NTMFS4C09NT1G ntmfs4c09n-d.pdf
NTMFS4C09NT1G
Hersteller: onsemi
Description: MOSFET N-CH 30V 9A 5DFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN, 5 Leads
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta)
Rds On (Max) @ Id, Vgs: 5.8mOhm @ 30A, 10V
Power Dissipation (Max): 760mW (Ta), 25.5W (Tc)
Vgs(th) (Max) @ Id: 2.1V @ 250µA
Supplier Device Package: 5-DFN (5x6) (8-SOFL)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 10.9 nC @ 4.5 V
Input Capacitance (Ciss) (Max) @ Vds: 1252 pF @ 15 V
auf Bestellung 5310 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
10+1.83 EUR
16+1.15 EUR
100+0.75 EUR
500+0.58 EUR
Mindestbestellmenge: 10
Im Einkaufswagen  Stück im Wert von  UAH
FGA6560WDF FGA6560WDF-D.pdf
FGA6560WDF
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 120A TO-3PN
Packaging: Tube
Package / Case: TO-3P-3, SC-65-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 110 ns
Vce(on) (Max) @ Vge, Ic: 2.3V @ 15V, 60A
Supplier Device Package: TO-3PN
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 25.6ns/71ns
Switching Energy: 2.46mJ (on), 520µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 84 nC
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 306 W
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86160ET100 fdmc86160et100-d.pdf
FDMC86160ET100
Hersteller: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 24000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.8 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86260ET150 fdmc86260et150-d.pdf
FDMC86260ET150
Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.59 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86340ET80 fdmc86340et80-d.pdf
FDMC86340ET80
Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86570LET60 fdmc86570let60-d.pdf
FDMC86570LET60
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+1.99 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86150ET100 fdms86150et100-d.pdf
FDMS86150ET100
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+5.8 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86255ET150 fdms86255et150-d.pdf
FDMS86255ET150
Hersteller: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86350ET80 fdms86350et80-d.pdf
FDMS86350ET80
Hersteller: onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
auf Bestellung 21000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+5.09 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86550ET60 fdms86550et60-d.pdf
FDMS86550ET60
Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 fdms86202et120-d.pdf
FDMS86202ET120
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3000+4.31 EUR
Mindestbestellmenge: 3000
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86160ET100 fdmc86160et100-d.pdf
FDMC86160ET100
Hersteller: onsemi
Description: MOSFET N-CH 100V 9A/43A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 9A (Ta), 43A (Tc)
Rds On (Max) @ Id, Vgs: 14mOhm @ 9A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 22 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1290 pF @ 50 V
auf Bestellung 27583 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.49 EUR
10+3.58 EUR
100+2.49 EUR
500+2.02 EUR
1000+1.87 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86260ET150 fdmc86260et150-d.pdf
FDMC86260ET150
Hersteller: onsemi
Description: MOSFET N-CH 150V 5.4A/25A PWR33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 5.4A (Ta), 25A (Tc)
Rds On (Max) @ Id, Vgs: 34mOhm @ 5.4A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1330 pF @ 75 V
auf Bestellung 6265 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.02 EUR
10+3.25 EUR
100+2.25 EUR
500+1.82 EUR
1000+1.69 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86340ET80 fdmc86340et80-d.pdf
FDMC86340ET80
Hersteller: onsemi
Description: MOSFET N-CH 80V 14A/68A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 14A (Ta), 68A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 14A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power33
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 49 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2775 pF @ 40 V
auf Bestellung 555 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.58 EUR
10+3.74 EUR
100+3.08 EUR
500+2.75 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMC86570LET60 fdmc86570let60-d.pdf
FDMC86570LET60
Hersteller: onsemi
Description: MOSFET N-CH 60V 18A/87A POWER33
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 18A (Ta), 87A (Tc)
Rds On (Max) @ Id, Vgs: 4.3mOhm @ 18A, 10V
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: Power33
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 88 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4790 pF @ 30 V
auf Bestellung 3156 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
4+5.19 EUR
10+3.54 EUR
100+2.57 EUR
500+2.19 EUR
1000+2.03 EUR
Mindestbestellmenge: 4
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86150ET100 fdms86150et100-d.pdf
FDMS86150ET100
Hersteller: onsemi
Description: MOSFET N-CH 100V 16A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 16A (Ta), 128A (Tc)
Rds On (Max) @ Id, Vgs: 4.85mOhm @ 16A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 62 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4065 pF @ 50 V
auf Bestellung 19538 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+13.53 EUR
10+9.2 EUR
100+6.75 EUR
500+5.8 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86255ET150 fdms86255et150-d.pdf
FDMS86255ET150
Hersteller: onsemi
Description: MOSFET N-CH 150V 10A/63A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 63A (Tc)
Rds On (Max) @ Id, Vgs: 12.4mOhm @ 10A, 10V
Power Dissipation (Max): 3.3W (Ta), 136W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 63 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4480 pF @ 75 V
auf Bestellung 257 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.19 EUR
10+7.43 EUR
100+5.46 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86350ET80 fdms86350et80-d.pdf
FDMS86350ET80
Hersteller: onsemi
Description: MOSFET N-CH 80V 25A/198A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta), 198A (Tc)
Rds On (Max) @ Id, Vgs: 2.4mOhm @ 25A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 155 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8030 pF @ 40 V
auf Bestellung 21887 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.14 EUR
10+8.23 EUR
100+6.01 EUR
500+5.09 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86550ET60 fdms86550et60-d.pdf
FDMS86550ET60
Hersteller: onsemi
Description: MOSFET N-CH 60V 32A/245A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 32A (Ta), 245A (Tc)
Rds On (Max) @ Id, Vgs: 1.65mOhm @ 32A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4.5V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 8V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 154 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8235 pF @ 30 V
auf Bestellung 2475 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+12.8 EUR
10+8.73 EUR
100+6.85 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDMS86202ET120 fdms86202et120-d.pdf
FDMS86202ET120
Hersteller: onsemi
Description: MOSFET N-CH 120V 13.5/102A PWR56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 13.5A (Ta), 102A (Tc)
Rds On (Max) @ Id, Vgs: 7.2mOhm @ 13.5A, 10V
Power Dissipation (Max): 3.3W (Ta), 187W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 120 V
Gate Charge (Qg) (Max) @ Vgs: 64 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4585 pF @ 60 V
auf Bestellung 8545 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+10.54 EUR
10+7.11 EUR
100+5.27 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0065N40 fdbl0065n40-d.pdf
FDBL0065N40
Hersteller: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2000+5.15 EUR
Mindestbestellmenge: 2000
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0090N40 fdbl0090n40-d.pdf
FDBL0090N40
Hersteller: onsemi
Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0630N150 fdbl0630n150-d.pdf
FDBL0630N150
Hersteller: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSA551UCX fsa551-d.pdf
Hersteller: onsemi
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Packaging: Tape & Reel (TR)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 600mOhm
-3db Bandwidth: 240MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0065N40 fdbl0065n40-d.pdf
FDBL0065N40
Hersteller: onsemi
Description: MOSFET N-CH 40V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 296 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 15900 pF @ 25 V
auf Bestellung 7075 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.99 EUR
10+8.11 EUR
100+5.92 EUR
500+5.15 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0090N40 fdbl0090n40-d.pdf
FDBL0090N40
Hersteller: onsemi
Description: MOSFET N-CH 40V 240A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 240A (Tc)
Rds On (Max) @ Id, Vgs: 0.9mOhm @ 80A, 10V
Power Dissipation (Max): 357W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 40 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12000 pF @ 25 V
auf Bestellung 60 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.1 EUR
10+8.18 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FDBL0630N150 fdbl0630n150-d.pdf
FDBL0630N150
Hersteller: onsemi
Description: MOSFET N-CH 150V 169A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 169A (Tc)
Rds On (Max) @ Id, Vgs: 6.3mOhm @ 80A, 10V
Power Dissipation (Max): 500W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 90 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 5805 pF @ 75 V
auf Bestellung 1428 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.56 EUR
10+6.76 EUR
100+5.05 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FSA551UCX fsa551-d.pdf
Hersteller: onsemi
Description: IC AUDIO SWITCH DUAL SPST 9WLCSP
Packaging: Cut Tape (CT)
Package / Case: 9-UFBGA, WLCSP
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Applications: Audio
On-State Resistance (Max): 600mOhm
-3db Bandwidth: 240MHz
Supplier Device Package: 9-WLCSP (1.22x1.22)
Voltage - Supply, Single (V+): 1.5V ~ 3V
Switch Circuit: SPST
Multiplexer/Demultiplexer Circuit: 1:1
Number of Channels: 2
auf Bestellung 681 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
7+2.68 EUR
10+2.39 EUR
25+2.27 EUR
100+1.74 EUR
250+1.54 EUR
500+1.46 EUR
Mindestbestellmenge: 7
Im Einkaufswagen  Stück im Wert von  UAH
NCS333SN2T1G ncs333-d.pdf
NCS333SN2T1G
Hersteller: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC 5TSOP
Packaging: Tape & Reel (TR)
Package / Case: SOT-23-5 Thin, TSOT-23-5
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 105°C
Current - Supply: 17µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: 5-TSOP
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
NCS333SQ3T2G ncs333-d.pdf
NCS333SQ3T2G
Hersteller: onsemi
Description: IC OPAMP ZERO-DRIFT 1 CIRC SC88A
Packaging: Tape & Reel (TR)
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Output Type: Rail-to-Rail
Mounting Type: Surface Mount
Amplifier Type: Zero-Drift
Operating Temperature: -40°C ~ 105°C
Current - Supply: 17µA
Slew Rate: 0.1V/µs
Gain Bandwidth Product: 350 kHz
Current - Input Bias: 60 pA
Voltage - Input Offset: 10 µV
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
Part Status: Obsolete
Number of Circuits: 1
Current - Output / Channel: 25 mA
Voltage - Supply Span (Min): 1.8 V
Voltage - Supply Span (Max): 5.5 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FDMA6676PZ fdma6676pz-d.pdf
FDMA6676PZ
Hersteller: onsemi
Description: MOSFET P-CH 30V 11A 6MICROFET
Packaging: Cut Tape (CT)
Package / Case: 6-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
Rds On (Max) @ Id, Vgs: 13.5mOhm @ 11A, 10V
Power Dissipation (Max): 2.4W (Ta)
Vgs(th) (Max) @ Id: 2.6V @ 250µA
Supplier Device Package: 6-MicroFET (2x2)
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 46 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 2160 pF @ 15 V
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FGH40T65SHD-F155 fgh40t65shd-d.pdf
FGH40T65SHD-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 80A TO-247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 31.8 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 40A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 19.2ns/65.6ns
Switching Energy: 1.01mJ (on), 297µJ (off)
Test Condition: 400V, 40A, 6Ohm, 15V
Gate Charge: 72.2 nC
Part Status: Active
Current - Collector (Ic) (Max): 80 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 120 A
Power - Max: 268 W
auf Bestellung 1879 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
3+7.39 EUR
10+4.89 EUR
450+2.91 EUR
900+2.71 EUR
1350+2.68 EUR
Mindestbestellmenge: 3
Im Einkaufswagen  Stück im Wert von  UAH
FGH60T65SHD-F155 fgh60t65shd-d.pdf
FGH60T65SHD-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 120A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 34.6 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 60A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 26ns/87ns
Switching Energy: 1.69mJ (on), 630µJ (off)
Test Condition: 400V, 60A, 6Ohm, 15V
Gate Charge: 102 nC
Part Status: Active
Current - Collector (Ic) (Max): 120 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 180 A
Power - Max: 349 W
auf Bestellung 281 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+9.15 EUR
30+5.19 EUR
120+4.32 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FGH75T65SHD-F155 fgh75t65shd-d.pdf
FGH75T65SHD-F155
Hersteller: onsemi
Description: IGBT TRENCH FS 650V 150A TO-247
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Operating Temperature: -55°C ~ 175°C (TJ)
Input Type: Standard
Reverse Recovery Time (trr): 43.4 ns
Vce(on) (Max) @ Vge, Ic: 2.1V @ 15V, 75A
Supplier Device Package: TO-247-3
IGBT Type: Trench Field Stop
Td (on/off) @ 25°C: 28ns/80ns
Switching Energy: 2.4mJ (on), 720µJ (off)
Test Condition: 400V, 75A, 3Ohm, 15V
Gate Charge: 123 nC
Part Status: Active
Current - Collector (Ic) (Max): 150 A
Voltage - Collector Emitter Breakdown (Max): 650 V
Current - Collector Pulsed (Icm): 225 A
Power - Max: 455 W
auf Bestellung 2320 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
2+11.3 EUR
30+6.52 EUR
120+5.47 EUR
510+4.73 EUR
Mindestbestellmenge: 2
Im Einkaufswagen  Stück im Wert von  UAH
FPF1C2P5MF07AM
Hersteller: onsemi
Description: IGBT MODULE 620V 39A 231W F1
Packaging: Tray
Package / Case: F1 Module
Mounting Type: Chassis Mount
Input: Single Phase Bridge Rectifier
Configuration: Full Bridge Inverter
Operating Temperature: -40°C ~ 150°C (TJ)
Vce(on) (Max) @ Vge, Ic: 1.6V @ 15V, 30A
NTC Thermistor: No
Supplier Device Package: F1
Current - Collector (Ic) (Max): 39 A
Voltage - Collector Emitter Breakdown (Max): 620 V
Power - Max: 231 W
Current - Collector Cutoff (Max): 25 µA
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
FSV1045V fsv1045v-d.pdf
FSV1045V
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.75 EUR
10000+0.73 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
FSV1060V fsv1060v-d.pdf
FSV1060V
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2773
Packaging: Tape & Reel (TR)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Voltage - DC Reverse (Vr) (Max): 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
auf Bestellung 15000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
5000+0.72 EUR
10000+0.7 EUR
Mindestbestellmenge: 5000
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2531M hcpl2530m-d.pdf
HCPL2531M
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 11006 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.45 EUR
10+2.48 EUR
100+1.91 EUR
500+1.65 EUR
1000+1.57 EUR
2000+1.5 EUR
5000+1.42 EUR
10000+1.38 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2531SDVM hcpl2530m-d.pdf
HCPL2531SDVM
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Tape & Reel (TR)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 1000 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
1000+1.59 EUR
Mindestbestellmenge: 1000
Im Einkaufswagen  Stück im Wert von  UAH
HCPL2531VM hcpl2530m-d.pdf
HCPL2531VM
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-DIP
Packaging: Tube
Package / Case: 8-DIP (0.300", 7.62mm)
Output Type: Transistor
Mounting Type: Through Hole
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-DIP
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 71829 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.31 EUR
10+2.37 EUR
100+1.82 EUR
500+1.57 EUR
1000+1.49 EUR
2000+1.43 EUR
5000+1.35 EUR
10000+1.31 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
RHRG1560CC-F085
RHRG1560CC-F085
Hersteller: onsemi
Description: DIODE ARRAY GP 600V 15A TO247-3
Packaging: Tube
Package / Case: TO-247-3
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Avalanche
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 15A
Supplier Device Package: TO-247-3
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 600 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RHRG1560-F085 ONSM-S-A0003589330-1.pdf?t.download=true&u=5oefqw
RHRG1560-F085
Hersteller: onsemi
Description: DIODE GEN PURP 600V 15A TO247-2
Packaging: Tube
Package / Case: TO-247-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 55 ns
Technology: Avalanche
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-247-2
Operating Temperature - Junction: -55°C ~ 175°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 600 V
Voltage - Forward (Vf) (Max) @ If: 2.3 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen  Stück im Wert von  UAH
RURP15100-F085 rurp15100_f085-d.pdf
RURP15100-F085
Hersteller: onsemi
Description: DIODE GEN PURP 1KV 15A TO220-2
Packaging: Tube
Package / Case: TO-220-2
Mounting Type: Through Hole
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 260 ns
Technology: Standard
Current - Average Rectified (Io): 15A
Supplier Device Package: TO-220-2
Operating Temperature - Junction: -55°C ~ 175°C
Part Status: Last Time Buy
Voltage - DC Reverse (Vr) (Max): 1000 V
Voltage - Forward (Vf) (Max) @ If: 1.8 V @ 15 A
Current - Reverse Leakage @ Vr: 100 µA @ 1000 V
auf Bestellung 439 Stücke:
Lieferzeit 10-14 Tag (e)
Anzahl Preis
6+3.13 EUR
10+2.81 EUR
100+2.26 EUR
Mindestbestellmenge: 6
Im Einkaufswagen  Stück im Wert von  UAH
Wählen Sie Seite:   [  << Vorherige Seite ]  1 237 474 552 553 554 555 556 557 558 559 560 561 562 711 948 1185 1422 1659 1896 2133 2370 2379  [ Nächste Seite >> ]