| Foto | Bezeichnung | Hersteller | Beschreibung | Verfügbarkeit | Privatkunde | ||||||||||||||
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FDMC8010ET30 | onsemi |
 Description: MOSFET N-CH 30V 30A/174A POWER33Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V Drain to Source Voltage (Vdss): 30 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Obsolete Supplier Device Package: Power33 Vgs(th) (Max) @ Id: 2.5V @ 1mA Power Dissipation (Max): 2.8W (Ta), 65W (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerWDFN Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS8050ET30 | onsemi |
Description: MOSFET N-CH 30V 55A/423A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
auf Bestellung 3000 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB290N80 | onsemi |
Description: MOSFET N-CH 800V 17A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Power Dissipation (Max): 212W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0110N60 | onsemi |
Description: MOSFET N-CH 60V 300A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V |
auf Bestellung 111 Stücke: Lieferzeit 10-14 Tag (e) |
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FDBL0150N80 | onsemi |
Description: MOSFET N-CH 80V 300A 8HPSOF Packaging: Cut Tape (CT) Package / Case: 8-PowerSFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 300A (Tc) Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V Power Dissipation (Max): 429W (Tj) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-HPSOF Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V |
auf Bestellung 3042 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS8050ET30 | onsemi |
Description: MOSFET N-CH 30V 55A/423A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerTDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc) Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V Power Dissipation (Max): 3.3W (Ta), 180W (Tc) Vgs(th) (Max) @ Id: 3V @ 750µA Supplier Device Package: 8-PQFN (5x6) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 30 V Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V |
auf Bestellung 8275 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB290N80 | onsemi |
Description: MOSFET N-CH 800V 17A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Drain to Source Voltage (Vdss): 800 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: TO-263 (D2Pak) Vgs(th) (Max) @ Id: 4.5V @ 1.7mA Power Dissipation (Max): 212W (Tc) Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V Current - Continuous Drain (Id) @ 25°C: 17A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Packaging: Cut Tape (CT) |
auf Bestellung 1482 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP785AH150T1G | onsemi |
Description: IC REG LINEAR 15V 10MA SOT89-3 Protection Features: Over Current, Over Temperature PSRR: 70dB (1kHz) Part Status: Active Voltage - Output (Min/Fixed): 15V Supplier Device Package: SOT-89-3 Number of Regulators: 1 Voltage - Input (Max): 450V Current - Quiescent (Iq): 22 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 10mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-243AA Packaging: Tape & Reel (TR) |
auf Bestellung 2500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP785AH33T1G | onsemi |
Description: IC REG LINEAR 3.3V 10MA SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 14 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 30388 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP785AH50T1G | onsemi |
Description: IC REG LINEAR 5V 10MA SOT89-3 Packaging: Tape & Reel (TR) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 21 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 32500 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP785AH150T1G | onsemi |
Description: IC REG LINEAR 15V 10MA SOT89-3 Protection Features: Over Current, Over Temperature PSRR: 70dB (1kHz) Part Status: Active Voltage - Output (Min/Fixed): 15V Supplier Device Package: SOT-89-3 Number of Regulators: 1 Voltage - Input (Max): 450V Current - Quiescent (Iq): 22 µA Output Configuration: Positive Operating Temperature: -40°C ~ 85°C Current - Output: 10mA Mounting Type: Surface Mount Output Type: Fixed Package / Case: TO-243AA Packaging: Cut Tape (CT) |
auf Bestellung 3316 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP785AH33T1G | onsemi |
Description: IC REG LINEAR 3.3V 10MA SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 14 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 3.3V PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 30388 Stücke: Lieferzeit 10-14 Tag (e) |
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NCP785AH50T1G | onsemi |
Description: IC REG LINEAR 5V 10MA SOT89-3 Packaging: Cut Tape (CT) Package / Case: TO-243AA Output Type: Fixed Mounting Type: Surface Mount Current - Output: 10mA Operating Temperature: -40°C ~ 85°C Output Configuration: Positive Current - Quiescent (Iq): 21 µA Voltage - Input (Max): 450V Number of Regulators: 1 Supplier Device Package: SOT-89-3 Voltage - Output (Min/Fixed): 5V Part Status: Active PSRR: 70dB (1kHz) Protection Features: Over Current, Over Temperature |
auf Bestellung 33896 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA86108LZ | onsemi |
Description: MOSFET N-CH 100V 2.2A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Tape & Reel (TR) |
auf Bestellung 51000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMA86108LZ | onsemi |
Description: MOSFET N-CH 100V 2.2A 6MICROFET Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Supplier Device Package: 6-MicroFET (2x2) Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 2.4W (Ta) Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 6-WDFN Exposed Pad Packaging: Cut Tape (CT) |
auf Bestellung 53131 Stücke: Lieferzeit 10-14 Tag (e) |
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FAN54020UCX | onsemi |
Description: IC BATT CHG LI-ION 1CELL 25WLCSP Current - Charging: Constant - Programmable Battery Pack Voltage: 4.5V (Max) Voltage - Supply (Max): 7.5V Fault Protection: Over Temperature, Over Voltage, Short Circuit Programmable Features: Current, Timer, Voltage Charge Current - Max: 1.5A Supplier Device Package: 25-WLCSP (2.4x2) Battery Chemistry: Lithium Ion/Polymer Operating Temperature: -30°C ~ 85°C (TA) Interface: I2C Mounting Type: Surface Mount Number of Cells: 1 Package / Case: 25-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMT800150DC | onsemi |
Description: MOSFET N-CH 150V 15A/99A 8DUAL Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMT800100DC | onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-Dual Cool™88 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Packaging: Tape & Reel (TR) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 3000 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMT800150DC | onsemi |
Description: MOSFET N-CH 150V 15A/99A 8DUAL Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc) Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-Dual Cool™88 Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V |
auf Bestellung 8773 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMT800100DC | onsemi |
Description: MOSFET N-CH 100V 24A/162A 8DUAL Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V Drain to Source Voltage (Vdss): 100 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Supplier Device Package: 8-Dual Cool™88 Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 3.2W (Ta), 156W (Tc) Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: 8-PowerVDFN Packaging: Cut Tape (CT) |
auf Bestellung 2346 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA553UCX | onsemi |
Description: IC AUDIO SWITCH SPST DUAL WLCSP Number of Channels: 2 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 1.5V ~ 3V Supplier Device Package: 9-WLCSP (1.22x1.22) -3db Bandwidth: 200MHz On-State Resistance (Max): 800mOhm Applications: Audio Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLCSP Packaging: Tape & Reel (TR) |
auf Bestellung 9000 Stücke: Lieferzeit 10-14 Tag (e) |
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FSA553UCX | onsemi |
Description: IC AUDIO SWITCH SPST DUAL WLCSP Number of Channels: 2 Multiplexer/Demultiplexer Circuit: 1:1 Switch Circuit: SPST Voltage - Supply, Single (V+): 1.5V ~ 3V Supplier Device Package: 9-WLCSP (1.22x1.22) -3db Bandwidth: 200MHz On-State Resistance (Max): 800mOhm Applications: Audio Operating Temperature: -40°C ~ 85°C (TA) Mounting Type: Surface Mount Package / Case: 9-UFBGA, WLCSP Packaging: Cut Tape (CT) |
auf Bestellung 9256 Stücke: Lieferzeit 10-14 Tag (e) |
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3LN01SS-TL-E | onsemi |
Description: MOSFET N-CH 30V 150MA SC81 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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NDDP010N25AZT4H | onsemi |
Description: MOSFET N-CH 250V 10A DPAK/TP-FA Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63 Packaging: Tape & Reel (TR) Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V Drain to Source Voltage (Vdss): 250 V Vgs (Max): ±30V Drive Voltage (Max Rds On, Min Rds On): 10V Supplier Device Package: DPAK/TP-FA Vgs(th) (Max) @ Id: 4.5V @ 1mA Power Dissipation (Max): 1W (Ta), 52W (Tc) Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V Current - Continuous Drain (Id) @ 25°C: 10A (Ta) FET Type: N-Channel |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TND321VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FL Part Status: Obsolete Load Type: Inductive Supplier Device Package: SOT-28FL/VEC8 Voltage - Load: 4.5V ~ 25V Technology: Power MOSFET Current - Peak Output: 800mA, 1A Applications: General Purpose Rds On (Typ): 6Ohm LS, 11Ohm HS Voltage - Supply: 4.5V ~ 25V Output Configuration: Half Bridge (2) Operating Temperature: -55°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Lead Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TND322VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FL Part Status: Obsolete Load Type: Inductive Supplier Device Package: SOT-28FL/VEC8 Voltage - Load: 4.5V ~ 25V Technology: Power MOSFET Current - Peak Output: 800mA, 1A Applications: General Purpose Rds On (Typ): 6Ohm LS, 11Ohm HS Voltage - Supply: 4.5V ~ 25V Output Configuration: Half Bridge (2) Operating Temperature: -55°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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TND323VD-TL-H | onsemi |
Description: IC HALF BRIDGE DRIVER SOT28FL Part Status: Obsolete Load Type: Inductive Supplier Device Package: SOT-28FL/VEC8 Voltage - Load: 4.5V ~ 25V Technology: Power MOSFET Current - Peak Output: 800mA, 1A Applications: General Purpose Rds On (Typ): 6Ohm LS, 11Ohm HS Voltage - Supply: 4.5V ~ 25V Output Configuration: Half Bridge (2) Operating Temperature: -55°C ~ 150°C (TJ) Interface: Logic Mounting Type: Surface Mount Package / Case: 8-SMD, Flat Leads Packaging: Tape & Reel (TR) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDN86501LZ | onsemi |
Description: MOSFET N-CH 60V 2.6A SUPERSOT3 Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Tape & Reel (TR) |
auf Bestellung 54000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDN86501LZ | onsemi |
Description: MOSFET N-CH 60V 2.6A SUPERSOT3 Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V Part Status: Active Supplier Device Package: SOT-23-3 Vgs(th) (Max) @ Id: 3V @ 250µA Power Dissipation (Max): 1.5W (Ta) Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 150°C (TJ) Mounting Type: Surface Mount Package / Case: TO-236-3, SC-59, SOT-23-3 Packaging: Cut Tape (CT) |
auf Bestellung 60344 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86262P | onsemi |
Description: MOSFET P-CH 150V 2A/8.4A 8MLP Packaging: Tape & Reel (TR) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
auf Bestellung 6000 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMC86262P | onsemi |
Description: MOSFET P-CH 150V 2A/8.4A 8MLP Packaging: Cut Tape (CT) Package / Case: 8-PowerWDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc) Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V Power Dissipation (Max): 2.3W (Ta), 40W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: 8-MLP (3.3x3.3) Drive Voltage (Max Rds On, Min Rds On): 6V, 10V Vgs (Max): ±25V Drain to Source Voltage (Vdss): 150 V Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V |
auf Bestellung 8083 Stücke: Lieferzeit 10-14 Tag (e) |
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FNA25060 | onsemi |
Description: MOD SPM 600V 50A SPMCA-A34 Voltage: 600 V Current: 50 A Part Status: Active Voltage - Isolation: 2500Vrms Configuration: 3 Phase Type: IGBT Mounting Type: Through Hole Package / Case: 34-PowerDIP Module (1.480", 37.60mm) Packaging: Tube |
auf Bestellung 12 Stücke: Lieferzeit 10-14 Tag (e) |
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FDMS86368-F085 | onsemi |
Description: MOSFET N-CH 80V 80A POWER56 Packaging: Tape & Reel (TR) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Grade: Automotive Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDB86563-F085 | onsemi |
Description: MOSFET N-CH 60V 110A D2PAK Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 10V Part Status: Active Supplier Device Package: D²PAK (TO-263) Vgs(th) (Max) @ Id: 4V @ 250µA Power Dissipation (Max): 333W (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Current - Continuous Drain (Id) @ 25°C: 110A (Tc) FET Type: N-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: -55°C ~ 175°C (TJ) Mounting Type: Surface Mount Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Packaging: Tape & Reel (TR) |
auf Bestellung 800 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB110N65F | onsemi |
Description: MOSFET N-CH 650V 35A D2PAK Packaging: Tape & Reel (TR) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
Produkt ist nicht verfügbar |
Mindestbestellmenge: 800 Stücke Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDMS86368-F085 | onsemi |
Description: MOSFET N-CH 80V 80A POWER56 Packaging: Cut Tape (CT) Package / Case: 8-PowerVDFN Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 80A (Tc) Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V Power Dissipation (Max): 214W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: Power56 Grade: Automotive Part Status: Obsolete Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 80 V Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V Qualification: AEC-Q101 |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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FDB86563-F085 | onsemi |
Description: MOSFET N-CH 60V 110A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 175°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 110A (Tc) Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V Power Dissipation (Max): 333W (Tc) Vgs(th) (Max) @ Id: 4V @ 250µA Supplier Device Package: D²PAK (TO-263) Part Status: Active Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V |
auf Bestellung 1739 Stücke: Lieferzeit 10-14 Tag (e) |
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FCB110N65F | onsemi |
Description: MOSFET N-CH 650V 35A D2PAK Packaging: Cut Tape (CT) Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB Mounting Type: Surface Mount Operating Temperature: -55°C ~ 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: N-Channel Current - Continuous Drain (Id) @ 25°C: 35A (Tc) Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V Power Dissipation (Max): 357W (Tc) Vgs(th) (Max) @ Id: 5V @ 3.5mA Supplier Device Package: TO-263 (D2Pak) Part Status: Not For New Designs Drive Voltage (Max Rds On, Min Rds On): 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 650 V Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V |
auf Bestellung 527 Stücke: Lieferzeit 10-14 Tag (e) |
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FSB50550ASE | onsemi |
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD Packaging: Cut Tape (CT) Package / Case: 23-PowerSMD Module, Gull Wing Mounting Type: Surface Mount Type: MOSFET Configuration: 3 Phase Voltage - Isolation: 1500Vrms Part Status: Not For New Designs Current: 2 A Voltage: 500 V |
auf Bestellung 433 Stücke: Lieferzeit 10-14 Tag (e) |
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FSV1045V | onsemi |
Description: DIODE SCHOTTKY 45V 10A TO2773 Packaging: Cut Tape (CT) Package / Case: TO-277, 3-PowerDFN Mounting Type: Surface Mount Speed: Fast Recovery =< 500ns, > 200mA (Io) Technology: Schottky Capacitance @ Vr, F: 820pF @ 4V, 1MHz Current - Average Rectified (Io): 10A Supplier Device Package: TO-277-3 Operating Temperature - Junction: -55°C ~ 150°C Part Status: Not For New Designs Voltage - DC Reverse (Vr) (Max): 45 V Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A Current - Reverse Leakage @ Vr: 220 µA @ 45 V |
auf Bestellung 94891 Stücke: Lieferzeit 10-14 Tag (e) |
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FSV1060V | onsemi |
Description: DIODE SCHOTTKY 60V 10A TO2773 Mounting Type: Surface Mount Package / Case: TO-277, 3-PowerDFN Packaging: Cut Tape (CT) Current - Reverse Leakage @ Vr: 220 µA @ 60 V Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A Voltage - DC Reverse (Vr) (Max): 60 V Operating Temperature - Junction: -55°C ~ 150°C Supplier Device Package: TO-277-3 Current - Average Rectified (Io): 10A Capacitance @ Vr, F: 550pF @ 4V, 1MHz Technology: Schottky Speed: Fast Recovery =< 500ns, > 200mA (Io) |
auf Bestellung 108467 Stücke: Lieferzeit 10-14 Tag (e) |
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HCPL2531SDVM | onsemi |
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD Packaging: Cut Tape (CT) Package / Case: 8-SMD, Gull Wing Output Type: Transistor Mounting Type: Surface Mount Operating Temperature: -40°C ~ 100°C Voltage - Forward (Vf) (Typ): 1.45V Input Type: DC Current - Output / Channel: 8mA Voltage - Isolation: 5000Vrms Current Transfer Ratio (Min): 19% @ 16mA Current Transfer Ratio (Max): 50% @ 16mA Supplier Device Package: 8-SMD Voltage - Output (Max): 20V Turn On / Turn Off Time (Typ): 250ns, 260ns Part Status: Active Number of Channels: 2 Current - DC Forward (If) (Max): 25 mA |
auf Bestellung 1124 Stücke: Lieferzeit 10-14 Tag (e) |
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| KAF-4320-AAA-JP-B1 | onsemi |
Description: IMAGE SENSOR CCD 4.3MP 84CPGA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| KAF-4320-AAA-JP-B2 | onsemi |
Description: IMAGE SENSOR CCD 4.3MP 84CPGA |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| NOM02A4-AG01G | onsemi |
Description: MOD IMAGE SENSOR 200DPI GRN A4 Supplier Device Package: Module Package / Case: Module Packaging: Box |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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KAF-0261-AAA-CD-BA | onsemi |
Description: IMAGE SENSOR CCD VGA 24CDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KAF-0402-AAA-CP-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP Supplier Device Package: 24-CDIP Active Pixel Array: 768H x 512V Pixel Size: 9µm x 9µm Voltage - Supply: 14.5V ~ 15.5V Type: CCD Package / Case: 24-CDIP Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KAF-0402-AAA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KAF-0402-ABA-CD-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP Supplier Device Package: 24-CDIP Active Pixel Array: 768H x 512V Pixel Size: 9µm x 9µm Voltage - Supply: 14.5V ~ 15.5V Type: CCD Package / Case: 24-CDIP Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KAF-0402-ABA-CD-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KAF-0402-ABA-CP-B1 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP Voltage - Supply: 14.5V ~ 15.5V Type: CCD Package / Case: 24-CDIP Module Packaging: Bulk Supplier Device Package: 24-CDIP Active Pixel Array: 768H x 512V Pixel Size: 9µm x 9µm |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
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KAF-0402-ABA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD WVGA 24CDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| KAF-1001-AAA-CB-B2 | onsemi |
Description: IMAGE SENSOR CCD 1.0MP 26CDIP Packaging: Bulk Package / Case: 26-CDIP Module Type: CCD Operating Temperature: -50°C ~ 50°C Voltage - Supply: 15V ~ 17.5V Pixel Size: 24µm x 24µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 26-CDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| KAF-1001-AAA-CP-B1 | onsemi |
Description: IMAGE SENSOR CCD 1.0MP 26CDIP Packaging: Bulk Package / Case: 26-CDIP Module Type: CCD Operating Temperature: -50°C ~ 50°C Voltage - Supply: 15V ~ 17.5V Pixel Size: 24µm x 24µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 26-CDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| KAF-1001-AAA-CP-B2 | onsemi |
Description: IMAGE SENSOR CCD 1.0MP 26CDIP Packaging: Bulk Package / Case: 26-CDIP Module Type: CCD Operating Temperature: -50°C ~ 50°C Voltage - Supply: 15V ~ 17.5V Pixel Size: 24µm x 24µm Active Pixel Array: 1024H x 1024V Supplier Device Package: 26-CDIP |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
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KAF-1603-ABA-CD-B2 | onsemi |
Description: IMAGE SENSOR CCD 1.6MP 24CDIP Supplier Device Package: 24-CDIP Active Pixel Array: 1536H x 1024V Pixel Size: 9µm x 9µm Voltage - Supply: 14.5V ~ 15.5V Operating Temperature: -60°C ~ 60°C Type: CCD Package / Case: 24-CDIP Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | ||||||||||||||
| KAF-16801-AAA-DP-B1 | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Supplier Device Package: 34-CDIP Active Pixel Array: 4096H x 4096V Pixel Size: 9µm x 9µm Voltage - Supply: 14.5V ~ 17V Operating Temperature: -60°C ~ 60°C (TA) Type: CCD Package / Case: 34-CDIP Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| KAF-16801-AAA-DP-B2 | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Supplier Device Package: 34-CDIP Active Pixel Array: 4096H x 4096V Pixel Size: 9µm x 9µm Voltage - Supply: 14.5V ~ 17V Operating Temperature: -60°C ~ 60°C (TA) Type: CCD Package / Case: 34-CDIP Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| KAF-16803-ABA-DD-BA | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Supplier Device Package: 34-CDIP Active Pixel Array: 4096H x 4096V Pixel Size: 9µm x 9µm Voltage - Supply: 14.75V ~ 17V Operating Temperature: -60°C ~ 60°C (TA) Type: CCD Package / Case: 34-CDIP Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH | |||||||||||||||
| KAF-16803-ABA-DP-BA | onsemi |
Description: IMAGE SENSOR CCD 16.8MP 34CDIP Supplier Device Package: 34-CDIP Active Pixel Array: 4096H x 4096V Pixel Size: 9µm x 9µm Voltage - Supply: 14.75V ~ 17V Operating Temperature: -60°C ~ 60°C (TA) Type: CCD Package / Case: 34-CDIP Module Packaging: Bulk |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| FDMC8010ET30 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 30A/174A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Description: MOSFET N-CH 30V 30A/174A POWER33
Input Capacitance (Ciss) (Max) @ Vds: 5860 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 94 nC @ 10 V
Drain to Source Voltage (Vdss): 30 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Obsolete
Supplier Device Package: Power33
Vgs(th) (Max) @ Id: 2.5V @ 1mA
Power Dissipation (Max): 2.8W (Ta), 65W (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerWDFN
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 1.3mOhm @ 30A, 10V
Current - Continuous Drain (Id) @ 25°C: 30A (Ta), 174A (Tc)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMS8050ET30 |
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Hersteller: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 3.53 EUR |
| FCB290N80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 212W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 800V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 212W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 6.4 EUR |
| FDBL0110N60 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
Description: MOSFET N-CH 60V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.1mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 220 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 13650 pF @ 30 V
auf Bestellung 111 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 14.3 EUR |
| 10+ | 9.67 EUR |
| 100+ | 7.06 EUR |
| FDBL0150N80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
Description: MOSFET N-CH 80V 300A 8HPSOF
Packaging: Cut Tape (CT)
Package / Case: 8-PowerSFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 300A (Tc)
Rds On (Max) @ Id, Vgs: 1.4mOhm @ 80A, 10V
Power Dissipation (Max): 429W (Tj)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-HPSOF
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 188 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 12800 pF @ 25 V
auf Bestellung 3042 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 10.52 EUR |
| 10+ | 7.03 EUR |
| 100+ | 5.07 EUR |
| 500+ | 4.99 EUR |
| FDMS8050ET30 |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
Description: MOSFET N-CH 30V 55A/423A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerTDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 55A (Ta), 423A (Tc)
Rds On (Max) @ Id, Vgs: 0.65mOhm @ 55A, 10V
Power Dissipation (Max): 3.3W (Ta), 180W (Tc)
Vgs(th) (Max) @ Id: 3V @ 750µA
Supplier Device Package: 8-PQFN (5x6)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 30 V
Gate Charge (Qg) (Max) @ Vgs: 285 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 22610 pF @ 15 V
auf Bestellung 8275 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.2 EUR |
| 10+ | 6.78 EUR |
| 100+ | 4.84 EUR |
| 500+ | 4.33 EUR |
| FCB290N80 |
|
Hersteller: onsemi
Description: MOSFET N-CH 800V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 212W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 800V 17A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 3205 pF @ 100 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Drain to Source Voltage (Vdss): 800 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: TO-263 (D2Pak)
Vgs(th) (Max) @ Id: 4.5V @ 1.7mA
Power Dissipation (Max): 212W (Tc)
Rds On (Max) @ Id, Vgs: 290mOhm @ 8.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 17A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
auf Bestellung 1482 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.42 EUR |
| 10+ | 8.81 EUR |
| 100+ | 6.72 EUR |
| NCP785AH150T1G |
|
Hersteller: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 15V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 450V
Current - Quiescent (Iq): 22 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
Description: IC REG LINEAR 15V 10MA SOT89-3
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 15V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 450V
Current - Quiescent (Iq): 22 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Tape & Reel (TR)
auf Bestellung 2500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.83 EUR |
| NCP785AH33T1G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 30388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.83 EUR |
| 5000+ | 0.81 EUR |
| NCP785AH50T1G |
|
Hersteller: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Tape & Reel (TR)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 32500 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2500+ | 0.93 EUR |
| 5000+ | 0.9 EUR |
| NCP785AH150T1G |
|
Hersteller: onsemi
Description: IC REG LINEAR 15V 10MA SOT89-3
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 15V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 450V
Current - Quiescent (Iq): 22 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
Description: IC REG LINEAR 15V 10MA SOT89-3
Protection Features: Over Current, Over Temperature
PSRR: 70dB (1kHz)
Part Status: Active
Voltage - Output (Min/Fixed): 15V
Supplier Device Package: SOT-89-3
Number of Regulators: 1
Voltage - Input (Max): 450V
Current - Quiescent (Iq): 22 µA
Output Configuration: Positive
Operating Temperature: -40°C ~ 85°C
Current - Output: 10mA
Mounting Type: Surface Mount
Output Type: Fixed
Package / Case: TO-243AA
Packaging: Cut Tape (CT)
auf Bestellung 3316 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 17+ | 1.3 EUR |
| 25+ | 1.18 EUR |
| 100+ | 1.04 EUR |
| 250+ | 0.96 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.9 EUR |
| NCP785AH33T1G |
|
Hersteller: onsemi
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 3.3V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 14 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 3.3V
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 30388 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 12+ | 1.82 EUR |
| 17+ | 1.3 EUR |
| 25+ | 1.18 EUR |
| 100+ | 1.04 EUR |
| 250+ | 0.96 EUR |
| 500+ | 0.93 EUR |
| 1000+ | 0.9 EUR |
| NCP785AH50T1G |
|
Hersteller: onsemi
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
Description: IC REG LINEAR 5V 10MA SOT89-3
Packaging: Cut Tape (CT)
Package / Case: TO-243AA
Output Type: Fixed
Mounting Type: Surface Mount
Current - Output: 10mA
Operating Temperature: -40°C ~ 85°C
Output Configuration: Positive
Current - Quiescent (Iq): 21 µA
Voltage - Input (Max): 450V
Number of Regulators: 1
Supplier Device Package: SOT-89-3
Voltage - Output (Min/Fixed): 5V
Part Status: Active
PSRR: 70dB (1kHz)
Protection Features: Over Current, Over Temperature
auf Bestellung 33896 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 11+ | 1.99 EUR |
| 15+ | 1.44 EUR |
| 25+ | 1.3 EUR |
| 100+ | 1.14 EUR |
| 250+ | 1.07 EUR |
| 500+ | 1.02 EUR |
| 1000+ | 1 EUR |
| FDMA86108LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Tape & Reel (TR)
auf Bestellung 51000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.94 EUR |
| 6000+ | 0.89 EUR |
| 9000+ | 0.88 EUR |
| FDMA86108LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 2.2A 6MICROFET
Input Capacitance (Ciss) (Max) @ Vds: 163 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 3 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: 6-MicroFET (2x2)
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 2.4W (Ta)
Rds On (Max) @ Id, Vgs: 243mOhm @ 2.2A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.2A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-WDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 53131 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.52 EUR |
| 10+ | 2.23 EUR |
| 100+ | 1.44 EUR |
| 500+ | 1.14 EUR |
| 1000+ | 1.02 EUR |
| FAN54020UCX |
|
Hersteller: onsemi
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 7.5V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.5A
Supplier Device Package: 25-WLCSP (2.4x2)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 25-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC BATT CHG LI-ION 1CELL 25WLCSP
Current - Charging: Constant - Programmable
Battery Pack Voltage: 4.5V (Max)
Voltage - Supply (Max): 7.5V
Fault Protection: Over Temperature, Over Voltage, Short Circuit
Programmable Features: Current, Timer, Voltage
Charge Current - Max: 1.5A
Supplier Device Package: 25-WLCSP (2.4x2)
Battery Chemistry: Lithium Ion/Polymer
Operating Temperature: -30°C ~ 85°C (TA)
Interface: I2C
Mounting Type: Surface Mount
Number of Cells: 1
Package / Case: 25-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDMT800150DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 7.25 EUR |
| FDMT800100DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Packaging: Tape & Reel (TR)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Produkt ist nicht verfügbar
Mindestbestellmenge: 3000 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMT800150DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
Description: MOSFET N-CH 150V 15A/99A 8DUAL
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 15A (Ta), 99A (Tc)
Rds On (Max) @ Id, Vgs: 6.5mOhm @ 15A, 10V
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-Dual Cool™88
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 108 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 8205 pF @ 75 V
auf Bestellung 8773 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 17.49 EUR |
| 10+ | 11.96 EUR |
| 100+ | 8.88 EUR |
| FDMT800100DC |
|
Hersteller: onsemi
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 100V 24A/162A 8DUAL
Input Capacitance (Ciss) (Max) @ Vds: 7835 pF @ 50 V
Gate Charge (Qg) (Max) @ Vgs: 111 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Supplier Device Package: 8-Dual Cool™88
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 3.2W (Ta), 156W (Tc)
Rds On (Max) @ Id, Vgs: 2.95mOhm @ 24A, 10V
Current - Continuous Drain (Id) @ 25°C: 24A (Ta), 162A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 8-PowerVDFN
Packaging: Cut Tape (CT)
auf Bestellung 2346 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 12.98 EUR |
| 10+ | 9.94 EUR |
| 100+ | 9.2 EUR |
| FSA553UCX |
|
Hersteller: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 200MHz
On-State Resistance (Max): 800mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 200MHz
On-State Resistance (Max): 800mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Tape & Reel (TR)
auf Bestellung 9000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.18 EUR |
| 6000+ | 1.15 EUR |
| 9000+ | 1.14 EUR |
| FSA553UCX |
|
Hersteller: onsemi
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 200MHz
On-State Resistance (Max): 800mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Cut Tape (CT)
Description: IC AUDIO SWITCH SPST DUAL WLCSP
Number of Channels: 2
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST
Voltage - Supply, Single (V+): 1.5V ~ 3V
Supplier Device Package: 9-WLCSP (1.22x1.22)
-3db Bandwidth: 200MHz
On-State Resistance (Max): 800mOhm
Applications: Audio
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 9-UFBGA, WLCSP
Packaging: Cut Tape (CT)
auf Bestellung 9256 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.13 EUR |
| 10+ | 2.58 EUR |
| 25+ | 2.18 EUR |
| 100+ | 1.71 EUR |
| 250+ | 1.5 EUR |
| 500+ | 1.36 EUR |
| 1000+ | 1.24 EUR |
| 3LN01SS-TL-E |
|
Hersteller: onsemi
Description: MOSFET N-CH 30V 150MA SC81
Description: MOSFET N-CH 30V 150MA SC81
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NDDP010N25AZT4H |
|
Hersteller: onsemi
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Description: MOSFET N-CH 250V 10A DPAK/TP-FA
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Tape & Reel (TR)
Input Capacitance (Ciss) (Max) @ Vds: 980 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 16 nC @ 10 V
Drain to Source Voltage (Vdss): 250 V
Vgs (Max): ±30V
Drive Voltage (Max Rds On, Min Rds On): 10V
Supplier Device Package: DPAK/TP-FA
Vgs(th) (Max) @ Id: 4.5V @ 1mA
Power Dissipation (Max): 1W (Ta), 52W (Tc)
Rds On (Max) @ Id, Vgs: 420mOhm @ 5A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: N-Channel
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TND321VD-TL-H |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: SOT-28FL/VEC8
Voltage - Load: 4.5V ~ 25V
Technology: Power MOSFET
Current - Peak Output: 800mA, 1A
Applications: General Purpose
Rds On (Typ): 6Ohm LS, 11Ohm HS
Voltage - Supply: 4.5V ~ 25V
Output Configuration: Half Bridge (2)
Operating Temperature: -55°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER SOT28FL
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: SOT-28FL/VEC8
Voltage - Load: 4.5V ~ 25V
Technology: Power MOSFET
Current - Peak Output: 800mA, 1A
Applications: General Purpose
Rds On (Typ): 6Ohm LS, 11Ohm HS
Voltage - Supply: 4.5V ~ 25V
Output Configuration: Half Bridge (2)
Operating Temperature: -55°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Lead
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TND322VD-TL-H |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: SOT-28FL/VEC8
Voltage - Load: 4.5V ~ 25V
Technology: Power MOSFET
Current - Peak Output: 800mA, 1A
Applications: General Purpose
Rds On (Typ): 6Ohm LS, 11Ohm HS
Voltage - Supply: 4.5V ~ 25V
Output Configuration: Half Bridge (2)
Operating Temperature: -55°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER SOT28FL
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: SOT-28FL/VEC8
Voltage - Load: 4.5V ~ 25V
Technology: Power MOSFET
Current - Peak Output: 800mA, 1A
Applications: General Purpose
Rds On (Typ): 6Ohm LS, 11Ohm HS
Voltage - Supply: 4.5V ~ 25V
Output Configuration: Half Bridge (2)
Operating Temperature: -55°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| TND323VD-TL-H |
|
Hersteller: onsemi
Description: IC HALF BRIDGE DRIVER SOT28FL
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: SOT-28FL/VEC8
Voltage - Load: 4.5V ~ 25V
Technology: Power MOSFET
Current - Peak Output: 800mA, 1A
Applications: General Purpose
Rds On (Typ): 6Ohm LS, 11Ohm HS
Voltage - Supply: 4.5V ~ 25V
Output Configuration: Half Bridge (2)
Operating Temperature: -55°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Description: IC HALF BRIDGE DRIVER SOT28FL
Part Status: Obsolete
Load Type: Inductive
Supplier Device Package: SOT-28FL/VEC8
Voltage - Load: 4.5V ~ 25V
Technology: Power MOSFET
Current - Peak Output: 800mA, 1A
Applications: General Purpose
Rds On (Typ): 6Ohm LS, 11Ohm HS
Voltage - Supply: 4.5V ~ 25V
Output Configuration: Half Bridge (2)
Operating Temperature: -55°C ~ 150°C (TJ)
Interface: Logic
Mounting Type: Surface Mount
Package / Case: 8-SMD, Flat Leads
Packaging: Tape & Reel (TR)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDN86501LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Tape & Reel (TR)
auf Bestellung 54000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 1.68 EUR |
| FDN86501LZ |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Description: MOSFET N-CH 60V 2.6A SUPERSOT3
Input Capacitance (Ciss) (Max) @ Vds: 335 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 5.4 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Part Status: Active
Supplier Device Package: SOT-23-3
Vgs(th) (Max) @ Id: 3V @ 250µA
Power Dissipation (Max): 1.5W (Ta)
Rds On (Max) @ Id, Vgs: 116mOhm @ 2.6A, 10V
Current - Continuous Drain (Id) @ 25°C: 2.6A (Ta)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 60344 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 4+ | 5.46 EUR |
| 10+ | 3.53 EUR |
| 100+ | 2.43 EUR |
| 500+ | 1.96 EUR |
| 1000+ | 1.81 EUR |
| FDMC86262P |
|
Hersteller: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
auf Bestellung 6000 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3000+ | 0.93 EUR |
| 6000+ | 0.87 EUR |
| FDMC86262P |
|
Hersteller: onsemi
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
Description: MOSFET P-CH 150V 2A/8.4A 8MLP
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 2A (Ta), 8.4A (Tc)
Rds On (Max) @ Id, Vgs: 307mOhm @ 2A, 10V
Power Dissipation (Max): 2.3W (Ta), 40W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: 8-MLP (3.3x3.3)
Drive Voltage (Max Rds On, Min Rds On): 6V, 10V
Vgs (Max): ±25V
Drain to Source Voltage (Vdss): 150 V
Gate Charge (Qg) (Max) @ Vgs: 13 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 885 pF @ 75 V
auf Bestellung 8083 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.62 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.55 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.13 EUR |
| FNA25060 |
|
Hersteller: onsemi
Description: MOD SPM 600V 50A SPMCA-A34
Voltage: 600 V
Current: 50 A
Part Status: Active
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Packaging: Tube
Description: MOD SPM 600V 50A SPMCA-A34
Voltage: 600 V
Current: 50 A
Part Status: Active
Voltage - Isolation: 2500Vrms
Configuration: 3 Phase
Type: IGBT
Mounting Type: Through Hole
Package / Case: 34-PowerDIP Module (1.480", 37.60mm)
Packaging: Tube
auf Bestellung 12 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 1+ | 112.8 EUR |
| FDMS86368-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Tape & Reel (TR)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB86563-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
Description: MOSFET N-CH 60V 110A D2PAK
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Part Status: Active
Supplier Device Package: D²PAK (TO-263)
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 333W (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Tape & Reel (TR)
auf Bestellung 800 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 800+ | 3.64 EUR |
| FCB110N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Tape & Reel (TR)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Produkt ist nicht verfügbar
Mindestbestellmenge: 800 Stücke
Im Einkaufswagen
Stück im Wert von UAH
| FDMS86368-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Qualification: AEC-Q101
Description: MOSFET N-CH 80V 80A POWER56
Packaging: Cut Tape (CT)
Package / Case: 8-PowerVDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 80A (Tc)
Rds On (Max) @ Id, Vgs: 4.5mOhm @ 80A, 10V
Power Dissipation (Max): 214W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: Power56
Grade: Automotive
Part Status: Obsolete
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 80 V
Gate Charge (Qg) (Max) @ Vgs: 75 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4350 pF @ 40 V
Qualification: AEC-Q101
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| FDB86563-F085 |
|
Hersteller: onsemi
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
Description: MOSFET N-CH 60V 110A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 110A (Tc)
Rds On (Max) @ Id, Vgs: 1.8mOhm @ 80A, 10V
Power Dissipation (Max): 333W (Tc)
Vgs(th) (Max) @ Id: 4V @ 250µA
Supplier Device Package: D²PAK (TO-263)
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 163 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 10100 pF @ 30 V
auf Bestellung 1739 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 3+ | 10.33 EUR |
| 10+ | 6.88 EUR |
| 100+ | 4.91 EUR |
| FCB110N65F |
|
Hersteller: onsemi
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
Description: MOSFET N-CH 650V 35A D2PAK
Packaging: Cut Tape (CT)
Package / Case: TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 35A (Tc)
Rds On (Max) @ Id, Vgs: 110mOhm @ 17.5A, 10V
Power Dissipation (Max): 357W (Tc)
Vgs(th) (Max) @ Id: 5V @ 3.5mA
Supplier Device Package: TO-263 (D2Pak)
Part Status: Not For New Designs
Drive Voltage (Max Rds On, Min Rds On): 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 650 V
Gate Charge (Qg) (Max) @ Vgs: 145 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 4895 pF @ 100 V
auf Bestellung 527 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 15.82 EUR |
| 10+ | 10.76 EUR |
| 50+ | 8.59 EUR |
| 100+ | 7.9 EUR |
| FSB50550ASE |
|
Hersteller: onsemi
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
Description: MOSFET IPM 500V 2A 23-PWRSMD MOD
Packaging: Cut Tape (CT)
Package / Case: 23-PowerSMD Module, Gull Wing
Mounting Type: Surface Mount
Type: MOSFET
Configuration: 3 Phase
Voltage - Isolation: 1500Vrms
Part Status: Not For New Designs
Current: 2 A
Voltage: 500 V
auf Bestellung 433 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 2+ | 19.85 EUR |
| 10+ | 13.74 EUR |
| 100+ | 10.28 EUR |
| FSV1045V |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
Description: DIODE SCHOTTKY 45V 10A TO2773
Packaging: Cut Tape (CT)
Package / Case: TO-277, 3-PowerDFN
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Capacitance @ Vr, F: 820pF @ 4V, 1MHz
Current - Average Rectified (Io): 10A
Supplier Device Package: TO-277-3
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Not For New Designs
Voltage - DC Reverse (Vr) (Max): 45 V
Voltage - Forward (Vf) (Max) @ If: 440 mV @ 10 A
Current - Reverse Leakage @ Vr: 220 µA @ 45 V
auf Bestellung 94891 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.72 EUR |
| 10+ | 2.38 EUR |
| 100+ | 1.59 EUR |
| 500+ | 1.26 EUR |
| 1000+ | 1.15 EUR |
| 2000+ | 1.08 EUR |
| FSV1060V |
|
Hersteller: onsemi
Description: DIODE SCHOTTKY 60V 10A TO2773
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Description: DIODE SCHOTTKY 60V 10A TO2773
Mounting Type: Surface Mount
Package / Case: TO-277, 3-PowerDFN
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 220 µA @ 60 V
Voltage - Forward (Vf) (Max) @ If: 520 mV @ 10 A
Voltage - DC Reverse (Vr) (Max): 60 V
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: TO-277-3
Current - Average Rectified (Io): 10A
Capacitance @ Vr, F: 550pF @ 4V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
auf Bestellung 108467 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 3.64 EUR |
| 10+ | 2.31 EUR |
| 100+ | 1.56 EUR |
| 500+ | 1.23 EUR |
| 1000+ | 1.13 EUR |
| 2000+ | 1.05 EUR |
| HCPL2531SDVM |
|
Hersteller: onsemi
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
Description: OPTOISOLATOR 5KV 2CH TRANS 8-SMD
Packaging: Cut Tape (CT)
Package / Case: 8-SMD, Gull Wing
Output Type: Transistor
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 100°C
Voltage - Forward (Vf) (Typ): 1.45V
Input Type: DC
Current - Output / Channel: 8mA
Voltage - Isolation: 5000Vrms
Current Transfer Ratio (Min): 19% @ 16mA
Current Transfer Ratio (Max): 50% @ 16mA
Supplier Device Package: 8-SMD
Voltage - Output (Max): 20V
Turn On / Turn Off Time (Typ): 250ns, 260ns
Part Status: Active
Number of Channels: 2
Current - DC Forward (If) (Max): 25 mA
auf Bestellung 1124 Stücke:
Lieferzeit 10-14 Tag (e)
| Anzahl | Privatkunde |
|---|---|
| 6+ | 4.16 EUR |
| 10+ | 2.99 EUR |
| 100+ | 2.3 EUR |
| 500+ | 1.99 EUR |
| KAF-4320-AAA-JP-B1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-4320-AAA-JP-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
Description: IMAGE SENSOR CCD 4.3MP 84CPGA
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| NOM02A4-AG01G |
|
Hersteller: onsemi
Description: MOD IMAGE SENSOR 200DPI GRN A4
Supplier Device Package: Module
Package / Case: Module
Packaging: Box
Description: MOD IMAGE SENSOR 200DPI GRN A4
Supplier Device Package: Module
Package / Case: Module
Packaging: Box
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-0261-AAA-CD-BA |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD VGA 24CDIP
Description: IMAGE SENSOR CCD VGA 24CDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-0402-AAA-CP-B1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Supplier Device Package: 24-CDIP
Active Pixel Array: 768H x 512V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 15.5V
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Description: IMAGE SENSOR CCD WVGA 24CDIP
Supplier Device Package: 24-CDIP
Active Pixel Array: 768H x 512V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 15.5V
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-0402-AAA-CP-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-0402-ABA-CD-B1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Supplier Device Package: 24-CDIP
Active Pixel Array: 768H x 512V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 15.5V
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Description: IMAGE SENSOR CCD WVGA 24CDIP
Supplier Device Package: 24-CDIP
Active Pixel Array: 768H x 512V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 15.5V
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-0402-ABA-CD-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-0402-ABA-CP-B1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Voltage - Supply: 14.5V ~ 15.5V
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Supplier Device Package: 24-CDIP
Active Pixel Array: 768H x 512V
Pixel Size: 9µm x 9µm
Description: IMAGE SENSOR CCD WVGA 24CDIP
Voltage - Supply: 14.5V ~ 15.5V
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Supplier Device Package: 24-CDIP
Active Pixel Array: 768H x 512V
Pixel Size: 9µm x 9µm
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-0402-ABA-CP-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD WVGA 24CDIP
Description: IMAGE SENSOR CCD WVGA 24CDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-1001-AAA-CB-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 1.0MP 26CDIP
Packaging: Bulk
Package / Case: 26-CDIP Module
Type: CCD
Operating Temperature: -50°C ~ 50°C
Voltage - Supply: 15V ~ 17.5V
Pixel Size: 24µm x 24µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 26-CDIP
Description: IMAGE SENSOR CCD 1.0MP 26CDIP
Packaging: Bulk
Package / Case: 26-CDIP Module
Type: CCD
Operating Temperature: -50°C ~ 50°C
Voltage - Supply: 15V ~ 17.5V
Pixel Size: 24µm x 24µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 26-CDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-1001-AAA-CP-B1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 1.0MP 26CDIP
Packaging: Bulk
Package / Case: 26-CDIP Module
Type: CCD
Operating Temperature: -50°C ~ 50°C
Voltage - Supply: 15V ~ 17.5V
Pixel Size: 24µm x 24µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 26-CDIP
Description: IMAGE SENSOR CCD 1.0MP 26CDIP
Packaging: Bulk
Package / Case: 26-CDIP Module
Type: CCD
Operating Temperature: -50°C ~ 50°C
Voltage - Supply: 15V ~ 17.5V
Pixel Size: 24µm x 24µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 26-CDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-1001-AAA-CP-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 1.0MP 26CDIP
Packaging: Bulk
Package / Case: 26-CDIP Module
Type: CCD
Operating Temperature: -50°C ~ 50°C
Voltage - Supply: 15V ~ 17.5V
Pixel Size: 24µm x 24µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 26-CDIP
Description: IMAGE SENSOR CCD 1.0MP 26CDIP
Packaging: Bulk
Package / Case: 26-CDIP Module
Type: CCD
Operating Temperature: -50°C ~ 50°C
Voltage - Supply: 15V ~ 17.5V
Pixel Size: 24µm x 24µm
Active Pixel Array: 1024H x 1024V
Supplier Device Package: 26-CDIP
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-1603-ABA-CD-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 1.6MP 24CDIP
Supplier Device Package: 24-CDIP
Active Pixel Array: 1536H x 1024V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 15.5V
Operating Temperature: -60°C ~ 60°C
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Description: IMAGE SENSOR CCD 1.6MP 24CDIP
Supplier Device Package: 24-CDIP
Active Pixel Array: 1536H x 1024V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 15.5V
Operating Temperature: -60°C ~ 60°C
Type: CCD
Package / Case: 24-CDIP Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-16801-AAA-DP-B1 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-16801-AAA-DP-B2 |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.5V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-16803-ABA-DD-BA |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.75V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.75V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| KAF-16803-ABA-DP-BA |
|
Hersteller: onsemi
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.75V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Description: IMAGE SENSOR CCD 16.8MP 34CDIP
Supplier Device Package: 34-CDIP
Active Pixel Array: 4096H x 4096V
Pixel Size: 9µm x 9µm
Voltage - Supply: 14.75V ~ 17V
Operating Temperature: -60°C ~ 60°C (TA)
Type: CCD
Package / Case: 34-CDIP Module
Packaging: Bulk
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH