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Technische Details ATP112-TL-H ON Semiconductor
Description: MOSFET P-CH 60V 25A ATPAK, Packaging: Tape & Reel (TR), Package / Case: ATPAK (2 leads+tab), Mounting Type: Surface Mount, Operating Temperature: 150°C (TJ), Technology: MOSFET (Metal Oxide), FET Type: P-Channel, Current - Continuous Drain (Id) @ 25°C: 25A (Ta), Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V, Power Dissipation (Max): 40W (Tc), Supplier Device Package: ATPAK, Drive Voltage (Max Rds On, Min Rds On): 4V, 10V, Vgs (Max): ±20V, Drain to Source Voltage (Vdss): 60 V, Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V, Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V.
Weitere Produktangebote ATP112-TL-H
| Foto | Bezeichnung | Hersteller | Beschreibung |
Verfügbarkeit |
Preis |
|---|---|---|---|---|---|
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ATP112-TL-H | onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Packaging: Tape & Reel (TR) Package / Case: ATPAK (2 leads+tab) Mounting Type: Surface Mount Operating Temperature: 150°C (TJ) Technology: MOSFET (Metal Oxide) FET Type: P-Channel Current - Continuous Drain (Id) @ 25°C: 25A (Ta) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Power Dissipation (Max): 40W (Tc) Supplier Device Package: ATPAK Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Vgs (Max): ±20V Drain to Source Voltage (Vdss): 60 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
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ATP112-TL-H | onsemi |
Description: MOSFET P-CH 60V 25A ATPAK Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V Drain to Source Voltage (Vdss): 60 V Vgs (Max): ±20V Drive Voltage (Max Rds On, Min Rds On): 4V, 10V Supplier Device Package: ATPAK Power Dissipation (Max): 40W (Tc) Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V Current - Continuous Drain (Id) @ 25°C: 25A (Ta) FET Type: P-Channel Technology: MOSFET (Metal Oxide) Operating Temperature: 150°C (TJ) Mounting Type: Surface Mount Package / Case: ATPAK (2 leads+tab) Packaging: Cut Tape (CT) |
Produkt ist nicht verfügbar |
Im Einkaufswagen Stück im Wert von UAH |
| ATP112-TL-H |
Hersteller: onsemi
Description: MOSFET P-CH 60V 25A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Description: MOSFET P-CH 60V 25A ATPAK
Packaging: Tape & Reel (TR)
Package / Case: ATPAK (2 leads+tab)
Mounting Type: Surface Mount
Operating Temperature: 150°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Power Dissipation (Max): 40W (Tc)
Supplier Device Package: ATPAK
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH
| ATP112-TL-H |
Hersteller: onsemi
Description: MOSFET P-CH 60V 25A ATPAK
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: ATPAK
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
Description: MOSFET P-CH 60V 25A ATPAK
Input Capacitance (Ciss) (Max) @ Vds: 1450 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 33.5 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: ATPAK
Power Dissipation (Max): 40W (Tc)
Rds On (Max) @ Id, Vgs: 43mOhm @ 13A, 10V
Current - Continuous Drain (Id) @ 25°C: 25A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: ATPAK (2 leads+tab)
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
Im Einkaufswagen
Stück im Wert von UAH