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NCV887100D1R2G NCV887100D1R2G onsemi ncv8871-d.pdf Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Number of Outputs: 1
Part Status: Active
Duty Cycle (Max): 88%
Output Phases: 1
Control Features: Current Limit, Enable
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Topology: Boost, Flyback
Frequency - Switching: 170kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Up, Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Clock Sync: Yes
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NIS5232MN1TXG NIS5232MN1TXG onsemi nis5232-d.pdf Description: IC ELECTRONIC FUSE 10DFN
Part Status: Not For New Designs
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 150°C
Current - Output: 4.2A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
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NJD1718T4G NJD1718T4G onsemi njd1718-d.pdf Description: TRANS PNP 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: DPAK
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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NJD35N04T4G NJD35N04T4G onsemi njd35n04-d.pdf Description: TRANS NPN DARL 350V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 45 W
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NLAS3899BMNTBG NLAS3899BMNTBG onsemi nlas3899b-d.pdf Description: IC SWITCH DPDT X 2 2.5OHM 16WQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 300nA
Channel Capacitance (CS(off), CD(off)): 10pF
Switch Time (Ton, Toff) (Max): 40ns, 30ns
Channel-to-Channel Matching (ΔRon): 700mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Charge Injection: 111pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 16-WQFN (1.8x2.6)
-3db Bandwidth: 280MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
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NLAS3899BMNTXG NLAS3899BMNTXG onsemi nlas3899b-d.pdf Description: IC SWITCH DPDT X 2 2.5OHM 16QFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 300nA
Channel Capacitance (CS(off), CD(off)): 10pF
Switch Time (Ton, Toff) (Max): 40ns, 30ns
Channel-to-Channel Matching (ΔRon): 700mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Charge Injection: 111pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 280MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NLAS7222CMUTBG NLAS7222CMUTBG onsemi Description: IC USB SWITCH DPDT 10UQFN
Number of Channels: 1
Part Status: Active
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 10-UQFN (1.4x1.8)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 8Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
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NLSV4T244DTR2G NLSV4T244DTR2G onsemi nlsv4t244-d.pdf Description: IC TRANSLATOR UNIDIR 14TSSOP
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 14-TSSOP
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Cut Tape (CT)
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NLSV8T244DTR2G NLSV8T244DTR2G onsemi nlsv8t244-d.pdf Description: IC TRANSLATOR UNIDIR 20TSSOP
Number of Circuits: 1
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 8
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 20-TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Cut Tape (CT)
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NLSV8T244MUTAG NLSV8T244MUTAG onsemi nlsv8t244-d.pdf Description: IC TRANSLATOR UNIDIR 20UDFN
Package / Case: 20-UFDFN
Features: Over Voltage Protection, Power-Off Protection
Packaging: Cut Tape (CT)
Number of Circuits: 1
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 8
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 20-UDFN (4x2)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
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NLSX4378FCT1G NLSX4378FCT1G onsemi NLSX4378.pdf Description: IC TRANSLATOR BIDIR 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 12-WFBGA, FCBGA
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 12-FlipChip (2.02x1.54)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
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NLSX5014MUTAG NLSX5014MUTAG onsemi nlsx5014-d.pdf Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 12-UQFN (1.7x2)
Data Rate: 100Mbps
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 12-UFQFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NLV17SZ74USG NLV17SZ74USG onsemi nl17sz74-d.pdf Description: IC FF D-TYPE SNGL 1BIT US8
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Supplier Device Package: US8
Input Capacitance: 7 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 32mA
Current - Quiescent (Iq): 1 µA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
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NRVA4004T3G NRVA4004T3G onsemi mra4003t3-d.pdf Description: DIODE STANDARD 400V 1A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
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NRVB0540T1G NRVB0540T1G onsemi mbr0540t1-d.pdf Description: DIODE SCHOTTKY 40V 500MA SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
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NRVB130T1G NRVB130T1G onsemi mbr130t1-d.pdf Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
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NRVB140SFT1G NRVB140SFT1G onsemi mbr140sft1-d.pdf Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
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NRVBS3200T3G-VF01 NRVBS3200T3G-VF01 onsemi mbrs3200t3-d.pdf Description: DIODE SCHOTTKY 200V 3A SMB
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
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NS5B1G384DFT2G NS5B1G384DFT2G onsemi ns5b1g384-d.pdf Description: IC SWITCH SPST-NCX1 15OHM SC88A
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 4.1pF
Switch Time (Ton, Toff) (Max): 6ns, 2ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
-3db Bandwidth: 330MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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NSR02F30NXT5G NSR02F30NXT5G onsemi nsr02f30-d.pdf Description: DIODE SCHOTTKY 30V 200MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
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NSR02L30NXT5G NSR02L30NXT5G onsemi nsr02l30-d.pdf Description: DIODE SCHOTTKY 30V 200MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
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NSS40302PDR2G NSS40302PDR2G onsemi nss40302p-d.pdf Description: TRANS NPN/PNP 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
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NSV1SS400T1G NSV1SS400T1G onsemi 1ss400t1-d.pdf Description: DIODE STANDARD 100V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVBAT54HT1G NSVBAT54HT1G onsemi bat54ht1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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NSVR0320MW2T1G NSVR0320MW2T1G onsemi nsr0320mw2t1-d.pdf Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
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NTD5802NT4G NTD5802NT4G onsemi ntd5802n-d.pdf Description: MOSFET N-CH 40V 16.4A/101A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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NTD6415ANLT4G NTD6415ANLT4G onsemi ntd6415anl-d.pdf Description: MOSFET N-CH 100V 23A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
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NTLUS3A18PZTAG NTLUS3A18PZTAG onsemi ntlus3a18pz-d.pdf Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
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NTRV4101PT1G NTRV4101PT1G onsemi ntr4101p-d.pdf Description: MOSFET P-CH 20V 1.8A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Qualification: AEC-Q101
Grade: Automotive
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NTZD3154NT5G NTZD3154NT5G onsemi ntzd3154n-d.pdf Description: MOSFET 2N-CH 20V 0.54A SOT563
Part Status: Last Time Buy
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 540mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
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NUF6400MNTBG NUF6400MNTBG onsemi nuf6400mn-d.pdf Description: FILTER RC(PI) 100 OHMSESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 2.4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 35MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 20 mA
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NUP3115UPMUTAG NUP3115UPMUTAG onsemi nup3115upmu-d.pdf Description: TVS DIODE 5.5VWM 9.4VC 6UDFN
Voltage - Clamping (Max) @ Ipp: 9.4V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 3
Supplier Device Package: 6-UDFN (1.6x1.6)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.8pF @ 1MHz
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Power Line Protection: Yes
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
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NUP4114UCW1T2G NUP4114UCW1T2G onsemi nup4114-d.pdf Description: TVS DIODE 5.5VWM 10VC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
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SVD2955T4G SVD2955T4G onsemi ntd2955-d.pdf Description: MOSFET P-CH 60V 12A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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NVD5865NLT4G NVD5865NLT4G onsemi NVD5865NL.pdf Description: MOSFET N-CH 60V 10A/46A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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NVF6P02T3G NVF6P02T3G onsemi ntf6p02t3-d.pdf Description: MOSFET P-CH 20V 10A SOT-223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 8.3W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
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NVR1P02T1G NVR1P02T1G onsemi ntr1p02t1-d.pdf Description: MOSFET P-CH 20V 1A SOT-23-3
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NVTFS5116PLTAG NVTFS5116PLTAG onsemi nvtfs5116pl-d.pdf Description: MOSFET P-CH 60V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Qualification: AEC-Q101
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NZ9F3V3ST5G NZ9F3V3ST5G onsemi nz9f2v4s-d.pdf Description: DIODE ZENER 3.3V 250MW SOD923
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PCA9535EDTR2G PCA9535EDTR2G onsemi pca9535e-d.pdf Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 10mA, 25mA
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
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RB520S30T5G RB520S30T5G onsemi rb520s30t1-d.pdf Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
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SB01-15C-TB-E SB01-15C-TB-E onsemi sb01-15c-d.pdf Description: DIODE SCHOTTKY 150V 100MA 3CP
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SB02-09C-TB-E SB02-09C-TB-E onsemi sb02-09c-d.pdf Description: DIODE SCHOTTKY 90V 200MA 3CP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
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SB05-05C-TB-E SB05-05C-TB-E onsemi sb05-05c-d.pdf Description: DIODE SCHOTTKY 50V 500MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
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SB05W05C-TB-E SB05W05C-TB-E onsemi sb05w05c-d.pdf Description: DIODE ARRAY SCHOT 50V 500MA 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SB07-03C-TB-E SB07-03C-TB-E onsemi en2997-d.pdf Description: DIODE SCHOTTKY 30V 700MA 3CP
Current - Reverse Leakage @ Vr: 80 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SBAS116LT1G SBAS116LT1G onsemi bas116lt1-d.pdf Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
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SBAT54CLT1G SBAT54CLT1G onsemi bat54clt1-d.pdf Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
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SBAV99LT1G SBAV99LT1G onsemi bav99lt1-d.pdf Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SBAV99WT1G SBAV99WT1G onsemi bav99wt1-d.pdf Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
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SBC846ALT1G SBC846ALT1G onsemi bc846alt1-d.pdf Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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SBC846BLT1G SBC846BLT1G onsemi bc846alt1-d.pdf Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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SFT1345-TL-H SFT1345-TL-H onsemi sft1345-d.pdf Description: MOSFET P-CH 100V 11A TP-FA
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TP-FA
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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SL12T1G SL12T1G onsemi sl05t1-d.pdf Description: TVS DIODE 12VWM 24VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3.5pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
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SM15T1G SM15T1G onsemi sm12t1-d.pdf Description: TVS DIODE 15VWM 24VC SOT233
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
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SMMBT3906LT1G SMMBT3906LT1G onsemi mmbt3906lt1-d.pdf Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
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SMMBT5551LT1G SMMBT5551LT1G onsemi mmbt5550lt1-d.pdf Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
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SMUN5214DW1T1G SMUN5214DW1T1G onsemi dtc114yd-d.pdf Description: TRANS 2NPN PREBIAS 0.187W SOT363
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
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SMUN5313DW1T1G SMUN5313DW1T1G onsemi dtc144ep-d.pdf Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
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SURS8340T3G SURS8340T3G onsemi murs320t3-d.pdf Description: DIODE STANDARD 400V 3A SMC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
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NCV887100D1R2G ncv8871-d.pdf
NCV887100D1R2G
Hersteller: onsemi
Description: IC REG CTRLR BOOST/FLYBACK 8SOIC
Number of Outputs: 1
Part Status: Active
Duty Cycle (Max): 88%
Output Phases: 1
Control Features: Current Limit, Enable
Synchronous Rectifier: No
Supplier Device Package: 8-SOIC
Voltage - Supply (Vcc/Vdd): 3.2V ~ 40V
Topology: Boost, Flyback
Frequency - Switching: 170kHz
Output Configuration: Positive
Operating Temperature: -40°C ~ 150°C (TJ)
Function: Step-Up, Step-Up/Step-Down
Mounting Type: Surface Mount
Output Type: Transistor Driver
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
Clock Sync: Yes
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4+4.91 EUR
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NIS5232MN1TXG nis5232-d.pdf
NIS5232MN1TXG
Hersteller: onsemi
Description: IC ELECTRONIC FUSE 10DFN
Part Status: Not For New Designs
Supplier Device Package: 10-DFN (3x3)
Operating Temperature: -40°C ~ 150°C
Current - Output: 4.2A
Voltage - Input: 9V ~ 18V
Function: Electronic Fuse
Mounting Type: Surface Mount
Sensing Method: High-Side
Package / Case: 10-VFDFN Exposed Pad
Packaging: Cut Tape (CT)
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NJD1718T4G njd1718-d.pdf
NJD1718T4G
Hersteller: onsemi
Description: TRANS PNP 50V 2A DPAK
Power - Max: 1.68 W
Voltage - Collector Emitter Breakdown (Max): 50 V
Current - Collector (Ic) (Max): 2 A
Supplier Device Package: DPAK
Frequency - Transition: 80MHz
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 500mA, 2V
Current - Collector Cutoff (Max): 100nA (ICBO)
Vce Saturation (Max) @ Ib, Ic: 500mV @ 50mA, 1A
Operating Temperature: -65°C ~ 150°C (TJ)
Transistor Type: PNP
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
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12+1.5 EUR
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NJD35N04T4G njd35n04-d.pdf
NJD35N04T4G
Hersteller: onsemi
Description: TRANS NPN DARL 350V 4A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Transistor Type: NPN - Darlington
Operating Temperature: -65°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 1.5V @ 20mA, 2A
Current - Collector Cutoff (Max): 50µA
DC Current Gain (hFE) (Min) @ Ic, Vce: 2000 @ 2A, 2V
Frequency - Transition: 90MHz
Supplier Device Package: DPAK
Part Status: Active
Current - Collector (Ic) (Max): 4 A
Voltage - Collector Emitter Breakdown (Max): 350 V
Power - Max: 45 W
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7+2.82 EUR
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NLAS3899BMNTBG nlas3899b-d.pdf
NLAS3899BMNTBG
Hersteller: onsemi
Description: IC SWITCH DPDT X 2 2.5OHM 16WQFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 300nA
Channel Capacitance (CS(off), CD(off)): 10pF
Switch Time (Ton, Toff) (Max): 40ns, 30ns
Channel-to-Channel Matching (ΔRon): 700mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Charge Injection: 111pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 16-WQFN (1.8x2.6)
-3db Bandwidth: 280MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-WFQFN
Packaging: Cut Tape (CT)
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NLAS3899BMNTXG nlas3899b-d.pdf
NLAS3899BMNTXG
Hersteller: onsemi
Description: IC SWITCH DPDT X 2 2.5OHM 16QFN
Number of Circuits: 2
Part Status: Active
Current - Leakage (IS(off)) (Max): 300nA
Channel Capacitance (CS(off), CD(off)): 10pF
Switch Time (Ton, Toff) (Max): 40ns, 30ns
Channel-to-Channel Matching (ΔRon): 700mOhm
Multiplexer/Demultiplexer Circuit: 2:2
Switch Circuit: DPDT
Charge Injection: 111pC
Voltage - Supply, Single (V+): 1.65V ~ 4.3V
Supplier Device Package: 16-QFN (3x3)
-3db Bandwidth: 280MHz
On-State Resistance (Max): 2.5Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 16-VFQFN Exposed Pad
Packaging: Cut Tape (CT)
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NLAS7222CMUTBG
NLAS7222CMUTBG
Hersteller: onsemi
Description: IC USB SWITCH DPDT 10UQFN
Number of Channels: 1
Part Status: Active
Switch Circuit: DPDT
Voltage - Supply, Single (V+): 1.65V ~ 4.5V
Supplier Device Package: 10-UQFN (1.4x1.8)
-3db Bandwidth: 700MHz
On-State Resistance (Max): 8Ohm
Applications: USB
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Package / Case: 10-UFQFN
Features: USB 2.0
Packaging: Cut Tape (CT)
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9+1.97 EUR
11+1.76 EUR
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NLSV4T244DTR2G nlsv4t244-d.pdf
NLSV4T244DTR2G
Hersteller: onsemi
Description: IC TRANSLATOR UNIDIR 14TSSOP
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 14-TSSOP
Operating Temperature: -40°C ~ 105°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 14-TSSOP (0.173", 4.40mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Cut Tape (CT)
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4+4.68 EUR
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NLSV8T244DTR2G nlsv8t244-d.pdf
NLSV8T244DTR2G
Hersteller: onsemi
Description: IC TRANSLATOR UNIDIR 20TSSOP
Number of Circuits: 1
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 8
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 20-TSSOP
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 20-TSSOP (0.173", 4.40mm Width)
Features: Over Voltage Protection, Power-Off Protection
Packaging: Cut Tape (CT)
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NLSV8T244MUTAG nlsv8t244-d.pdf
NLSV8T244MUTAG
Hersteller: onsemi
Description: IC TRANSLATOR UNIDIR 20UDFN
Package / Case: 20-UFDFN
Features: Over Voltage Protection, Power-Off Protection
Packaging: Cut Tape (CT)
Number of Circuits: 1
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 8
Translator Type: Voltage Level
Channel Type: Unidirectional
Supplier Device Package: 20-UDFN (4x2)
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
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3+6.51 EUR
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NLSX4378FCT1G NLSX4378.pdf
NLSX4378FCT1G
Hersteller: onsemi
Description: IC TRANSLATOR BIDIR 12FLIPCHIP
Packaging: Cut Tape (CT)
Features: Auto-Direction Sensing
Package / Case: 12-WFBGA, FCBGA
Output Type: Open Drain
Mounting Type: Surface Mount
Operating Temperature: -40°C ~ 85°C (TA)
Data Rate: 24Mbps
Supplier Device Package: 12-FlipChip (2.02x1.54)
Channel Type: Bidirectional
Translator Type: Voltage Level
Channels per Circuit: 4
Voltage - VCCA: 1.65 V ~ 5.5 V
Voltage - VCCB: 1.65 V ~ 5.5 V
Number of Circuits: 1
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NLSX5014MUTAG nlsx5014-d.pdf
NLSX5014MUTAG
Hersteller: onsemi
Description: IC TRANSLTR BIDIRECTIONAL 12UQFN
Number of Circuits: 1
Part Status: Active
Voltage - VCCB: 0.9 V ~ 4.5 V
Voltage - VCCA: 0.9 V ~ 4.5 V
Channels per Circuit: 4
Translator Type: Voltage Level
Channel Type: Bidirectional
Supplier Device Package: 12-UQFN (1.7x2)
Data Rate: 100Mbps
Operating Temperature: -55°C ~ 125°C (TA)
Mounting Type: Surface Mount
Output Type: Tri-State, Non-Inverted
Package / Case: 12-UFQFN
Features: Auto-Direction Sensing, Power-Off Protection
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NLV17SZ74USG nl17sz74-d.pdf
NLV17SZ74USG
Hersteller: onsemi
Description: IC FF D-TYPE SNGL 1BIT US8
Number of Bits per Element: 1
Part Status: Active
Max Propagation Delay @ V, Max CL: 5ns @ 5V, 50pF
Supplier Device Package: US8
Input Capacitance: 7 pF
Clock Frequency: 200 MHz
Trigger Type: Positive Edge
Current - Output High, Low: 32mA, 32mA
Current - Quiescent (Iq): 1 µA
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C (TA)
Type: D-Type
Function: Set(Preset) and Reset
Number of Elements: 1
Mounting Type: Surface Mount
Output Type: Complementary
Package / Case: 8-VFSOP (0.091", 2.30mm Width)
Packaging: Cut Tape (CT)
Qualification: AEC-Q100
Grade: Automotive
auf Bestellung 7387 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1 EUR
20+0.88 EUR
25+0.83 EUR
100+0.63 EUR
250+0.53 EUR
500+0.51 EUR
1000+0.39 EUR
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NRVA4004T3G mra4003t3-d.pdf
NRVA4004T3G
Hersteller: onsemi
Description: DIODE STANDARD 400V 1A SMA
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.1 V @ 1 A
Voltage - DC Reverse (Vr) (Max): 400 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SMA
Current - Average Rectified (Io): 1A
Technology: Standard
Speed: Standard Recovery >500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AC, SMA
Packaging: Cut Tape (CT)
auf Bestellung 5176102 Stücke:
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84+0.21 EUR
122+0.14 EUR
140+0.13 EUR
166+0.11 EUR
250+0.097 EUR
500+0.092 EUR
1000+0.087 EUR
2500+0.082 EUR
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NRVB0540T1G mbr0540t1-d.pdf
NRVB0540T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 500MA SOD123
Qualification: AEC-Q101
Current - Reverse Leakage @ Vr: 20 µA @ 40 V
Voltage - Forward (Vf) (Max) @ If: 510 mV @ 500 mA
Voltage - DC Reverse (Vr) (Max): 40 V
Grade: Automotive
Operating Temperature - Junction: -55°C ~ 150°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 500mA
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
auf Bestellung 22833 Stücke:
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AnzahlPreis
29+0.62 EUR
38+0.47 EUR
100+0.28 EUR
500+0.26 EUR
1000+0.18 EUR
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NRVB130T1G mbr130t1-d.pdf
NRVB130T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 1A SOD123
Current - Reverse Leakage @ Vr: 60 µA @ 30 V
Voltage - Forward (Vf) (Max) @ If: 450 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Operating Temperature - Junction: -65°C ~ 125°C
Supplier Device Package: SOD-123
Current - Average Rectified (Io): 1A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SOD-123
Packaging: Cut Tape (CT)
auf Bestellung 79733 Stücke:
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AnzahlPreis
29+0.62 EUR
43+0.42 EUR
100+0.34 EUR
500+0.25 EUR
1000+0.23 EUR
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NRVB140SFT1G mbr140sft1-d.pdf
NRVB140SFT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 40V 1A SOD123FL
Packaging: Cut Tape (CT)
Package / Case: SOD-123F
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Technology: Schottky
Current - Average Rectified (Io): 1A
Supplier Device Package: SOD-123FL
Operating Temperature - Junction: -55°C ~ 125°C
Grade: Automotive
Voltage - DC Reverse (Vr) (Max): 40 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 1 A
Current - Reverse Leakage @ Vr: 500 µA @ 40 V
Qualification: AEC-Q101
auf Bestellung 1188 Stücke:
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AnzahlPreis
20+0.92 EUR
31+0.58 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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NRVBS3200T3G-VF01 mbrs3200t3-d.pdf
NRVBS3200T3G-VF01
Hersteller: onsemi
Description: DIODE SCHOTTKY 200V 3A SMB
Current - Reverse Leakage @ Vr: 1 mA @ 200 V
Voltage - Forward (Vf) (Max) @ If: 840 mV @ 3 A
Voltage - DC Reverse (Vr) (Max): 200 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMB
Current - Average Rectified (Io): 3A
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AA, SMB
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NS5B1G384DFT2G ns5b1g384-d.pdf
NS5B1G384DFT2G
Hersteller: onsemi
Description: IC SWITCH SPST-NCX1 15OHM SC88A
Number of Circuits: 1
Current - Leakage (IS(off)) (Max): 100nA
Channel Capacitance (CS(off), CD(off)): 4.1pF
Switch Time (Ton, Toff) (Max): 6ns, 2ns
Multiplexer/Demultiplexer Circuit: 1:1
Switch Circuit: SPST - NC
Package / Case: 5-TSSOP, SC-70-5, SOT-353
Packaging: Cut Tape (CT)
Voltage - Supply, Single (V+): 2V ~ 5.5V
Supplier Device Package: SC-88A (SC-70-5/SOT-353)
-3db Bandwidth: 330MHz
On-State Resistance (Max): 15Ohm
Operating Temperature: -40°C ~ 85°C (TA)
Mounting Type: Surface Mount
Produkt ist nicht verfügbar
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NSR02F30NXT5G nsr02f30-d.pdf
NSR02F30NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 125°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 200 mA
Current - Reverse Leakage @ Vr: 50 µA @ 30 V
auf Bestellung 8160 Stücke:
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AnzahlPreis
23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
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NSR02L30NXT5G nsr02l30-d.pdf
NSR02L30NXT5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA 2DSN
Packaging: Cut Tape (CT)
Package / Case: 0201 (0603 Metric)
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Capacitance @ Vr, F: 7pF @ 5V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: 2-DSN (0.60x0.30)
Operating Temperature - Junction: 150°C (Max)
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 580 mV @ 200 mA
Current - Reverse Leakage @ Vr: 3 µA @ 30 V
auf Bestellung 47862 Stücke:
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AnzahlPreis
23+0.79 EUR
36+0.49 EUR
100+0.31 EUR
500+0.23 EUR
1000+0.21 EUR
2000+0.19 EUR
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NSS40302PDR2G nss40302p-d.pdf
NSS40302PDR2G
Hersteller: onsemi
Description: TRANS NPN/PNP 40V 3A 8-SOIC
Packaging: Cut Tape (CT)
Package / Case: 8-SOIC (0.154", 3.90mm Width)
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Power - Max: 653mW
Current - Collector (Ic) (Max): 3A
Voltage - Collector Emitter Breakdown (Max): 40V
Vce Saturation (Max) @ Ib, Ic: 115mV @ 200mA, 2A
Current - Collector Cutoff (Max): 100nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 180 @ 1A, 2V
Frequency - Transition: 100MHz
Supplier Device Package: 8-SOIC
Part Status: Active
auf Bestellung 88233 Stücke:
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AnzahlPreis
7+2.71 EUR
11+1.71 EUR
100+1.15 EUR
500+0.91 EUR
1000+0.83 EUR
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NSV1SS400T1G 1ss400t1-d.pdf
NSV1SS400T1G
Hersteller: onsemi
Description: DIODE STANDARD 100V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 4 ns
Technology: Standard
Capacitance @ Vr, F: 3pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.2 V @ 100 mA
Current - Reverse Leakage @ Vr: 100 nA @ 80 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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NSVBAT54HT1G bat54ht1-d.pdf
NSVBAT54HT1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD323
Packaging: Cut Tape (CT)
Package / Case: SC-76, SOD-323
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Capacitance @ Vr, F: 10pF @ 1V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-323
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 1224 Stücke:
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AnzahlPreis
72+0.25 EUR
122+0.14 EUR
199+0.089 EUR
500+0.064 EUR
1000+0.056 EUR
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NSVR0320MW2T1G nsr0320mw2t1-d.pdf
NSVR0320MW2T1G
Hersteller: onsemi
Description: DIODE SCHOTTKY 20V 1A SOD323
Qualification: AEC-Q101
Grade: Automotive
Current - Reverse Leakage @ Vr: 50 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 500 mV @ 900 mA
Voltage - DC Reverse (Vr) (Max): 20 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: SOD-323
Current - Average Rectified (Io): 1A
Capacitance @ Vr, F: 29pF @ 5V, 1MHz
Technology: Schottky
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: SC-76, SOD-323
Packaging: Cut Tape (CT)
auf Bestellung 17169 Stücke:
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AnzahlPreis
28+0.65 EUR
41+0.43 EUR
100+0.34 EUR
500+0.26 EUR
1000+0.23 EUR
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NTD5802NT4G ntd5802n-d.pdf
NTD5802NT4G
Hersteller: onsemi
Description: MOSFET N-CH 40V 16.4A/101A DPAK
Input Capacitance (Ciss) (Max) @ Vds: 5025 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 100 nC @ 10 V
Drain to Source Voltage (Vdss): 40 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 3.5V @ 250µA
Power Dissipation (Max): 2.5W (Ta), 93.75W (Tc)
Rds On (Max) @ Id, Vgs: 4.4mOhm @ 50A, 10V
Current - Continuous Drain (Id) @ 25°C: 16.4A (Ta), 101A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4586 Stücke:
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AnzahlPreis
5+3.64 EUR
10+2.34 EUR
100+1.59 EUR
500+1.28 EUR
1000+1.18 EUR
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NTD6415ANLT4G ntd6415anl-d.pdf
NTD6415ANLT4G
Hersteller: onsemi
Description: MOSFET N-CH 100V 23A DPAK
Packaging: Cut Tape (CT)
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: N-Channel
Current - Continuous Drain (Id) @ 25°C: 23A (Tc)
Rds On (Max) @ Id, Vgs: 52mOhm @ 10A, 10V
Power Dissipation (Max): 83W (Tc)
Vgs(th) (Max) @ Id: 2V @ 250µA
Supplier Device Package: DPAK
Part Status: Active
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 100 V
Gate Charge (Qg) (Max) @ Vgs: 35 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1024 pF @ 25 V
auf Bestellung 4441 Stücke:
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5+4.14 EUR
10+2.68 EUR
100+1.84 EUR
500+1.5 EUR
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NTLUS3A18PZTAG ntlus3a18pz-d.pdf
NTLUS3A18PZTAG
Hersteller: onsemi
Description: MOSFET P-CH 20V 5.1A 6UDFN
Input Capacitance (Ciss) (Max) @ Vds: 2240 pF @ 15 V
Gate Charge (Qg) (Max) @ Vgs: 28 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 1.5V, 4.5V
Supplier Device Package: 6-UDFN (2x2)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 700mW (Ta)
Rds On (Max) @ Id, Vgs: 18mOhm @ 7A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 5.1A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: 6-UDFN Exposed Pad
Packaging: Cut Tape (CT)
auf Bestellung 12 Stücke:
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AnzahlPreis
11+1.62 EUR
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NTRV4101PT1G ntr4101p-d.pdf
NTRV4101PT1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1.8A SOT23-3
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Drive Voltage (Max Rds On, Min Rds On): 1.8V, 4.5V
Part Status: Active
Supplier Device Package: SOT-23-3 (TO-236)
Vgs(th) (Max) @ Id: 1.2V @ 250µA
Power Dissipation (Max): 420mW (Ta)
Rds On (Max) @ Id, Vgs: 85mOhm @ 1.6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 1.8A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Input Capacitance (Ciss) (Max) @ Vds: 675 pF @ 10 V
Gate Charge (Qg) (Max) @ Vgs: 8.5 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Qualification: AEC-Q101
Grade: Automotive
auf Bestellung 11565 Stücke:
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AnzahlPreis
15+1.21 EUR
22+0.82 EUR
100+0.57 EUR
500+0.46 EUR
1000+0.38 EUR
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NTZD3154NT5G ntzd3154n-d.pdf
NTZD3154NT5G
Hersteller: onsemi
Description: MOSFET 2N-CH 20V 0.54A SOT563
Part Status: Last Time Buy
Supplier Device Package: SOT-563
Vgs(th) (Max) @ Id: 1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs: 2.5nC @ 4.5V
Rds On (Max) @ Id, Vgs: 550mOhm @ 540mA, 4.5V
Input Capacitance (Ciss) (Max) @ Vds: 150pF @ 16V
Current - Continuous Drain (Id) @ 25°C: 540mA
Drain to Source Voltage (Vdss): 20V
Power - Max: 250mW
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Configuration: 2 N-Channel (Dual)
Mounting Type: Surface Mount
Package / Case: SOT-563, SOT-666
Packaging: Cut Tape (CT)
auf Bestellung 937 Stücke:
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24+0.74 EUR
34+0.52 EUR
100+0.26 EUR
500+0.22 EUR
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NUF6400MNTBG nuf6400mn-d.pdf
NUF6400MNTBG
Hersteller: onsemi
Description: FILTER RC(PI) 100 OHMSESD SMD
Packaging: Cut Tape (CT)
Package / Case: 12-VFDFN Exposed Pad
Size / Dimension: 0.118" L x 0.053" W (3.00mm x 1.35mm)
Mounting Type: Surface Mount
Type: Low Pass
Operating Temperature: -40°C ~ 85°C
Values: R = 100Ohms, C = 50pF
Height: 0.039" (1.00mm)
Attenuation Value: -30dB @ 800MHz ~ 2.4GHz
Filter Order: 2nd
Applications: Data Lines for Mobile Devices
Technology: RC (Pi)
Center / Cutoff Frequency: 35MHz (Cutoff)
Resistance - Channel (Ohms): 100
ESD Protection: Yes
Part Status: Active
Number of Channels: 6
Current: 20 mA
auf Bestellung 22116 Stücke:
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20+0.92 EUR
24+0.74 EUR
26+0.69 EUR
50+0.65 EUR
100+0.61 EUR
250+0.56 EUR
500+0.53 EUR
1000+0.5 EUR
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NUP3115UPMUTAG nup3115upmu-d.pdf
NUP3115UPMUTAG
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 9.4VC 6UDFN
Voltage - Clamping (Max) @ Ipp: 9.4V (Typ)
Voltage - Breakdown (Min): 6V
Unidirectional Channels: 3
Supplier Device Package: 6-UDFN (1.6x1.6)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Current - Peak Pulse (10/1000µs): 1A (8/20µs)
Capacitance @ Frequency: 0.8pF @ 1MHz
Type: Steering (Rail to Rail)
Mounting Type: Surface Mount
Package / Case: 6-UFDFN Exposed Pad
Packaging: Cut Tape (CT)
Power Line Protection: Yes
Applications: General Purpose
Operating Temperature: -40°C ~ 125°C (TJ)
auf Bestellung 2561 Stücke:
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AnzahlPreis
12+1.48 EUR
14+1.28 EUR
100+0.89 EUR
500+0.74 EUR
1000+0.63 EUR
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NUP4114UCW1T2G nup4114-d.pdf
NUP4114UCW1T2G
Hersteller: onsemi
Description: TVS DIODE 5.5VWM 10VC SC88
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Type: Steering (Rail to Rail)
Operating Temperature: -40°C ~ 125°C (TJ)
Applications: General Purpose
Capacitance @ Frequency: 0.6pF @ 1MHz
Current - Peak Pulse (10/1000µs): 8A (8/20µs)
Voltage - Reverse Standoff (Typ): 5.5V (Max)
Supplier Device Package: SC-88/SC70-6/SOT-363
Unidirectional Channels: 4
Voltage - Breakdown (Min): 5.5V
Voltage - Clamping (Max) @ Ipp: 10V
Power Line Protection: Yes
Part Status: Active
auf Bestellung 32368 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+0.81 EUR
36+0.49 EUR
100+0.32 EUR
500+0.24 EUR
1000+0.21 EUR
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SVD2955T4G ntd2955-d.pdf
SVD2955T4G
Hersteller: onsemi
Description: MOSFET P-CH 60V 12A DPAK
Qualification: AEC-Q101
Input Capacitance (Ciss) (Max) @ Vds: 750 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 30 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 10V
Grade: Automotive
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 4V @ 250µA
Power Dissipation (Max): 55W (Tj)
Rds On (Max) @ Id, Vgs: 180mOhm @ 6A, 10V
Current - Continuous Drain (Id) @ 25°C: 12A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
auf Bestellung 4707 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
7+2.73 EUR
11+1.73 EUR
100+1.16 EUR
500+0.91 EUR
1000+0.83 EUR
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NVD5865NLT4G NVD5865NL.pdf
NVD5865NLT4G
Hersteller: onsemi
Description: MOSFET N-CH 60V 10A/46A DPAK
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1400 pF @ 25 V
Gate Charge (Qg) (Max) @ Vgs: 29 nC @ 10 V
Drain to Source Voltage (Vdss): 60 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Supplier Device Package: DPAK
Vgs(th) (Max) @ Id: 2V @ 250µA
Power Dissipation (Max): 3.1W (Ta), 71W (Tc)
Rds On (Max) @ Id, Vgs: 16mOhm @ 19A, 10V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta), 46A (Tc)
FET Type: N-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 175°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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NVF6P02T3G ntf6p02t3-d.pdf
NVF6P02T3G
Hersteller: onsemi
Description: MOSFET P-CH 20V 10A SOT-223
Qualification: AEC-Q101
Grade: Automotive
Input Capacitance (Ciss) (Max) @ Vds: 1200 pF @ 16 V
Gate Charge (Qg) (Max) @ Vgs: 20 nC @ 4.5 V
Drain to Source Voltage (Vdss): 20 V
Vgs (Max): ±8V
Drive Voltage (Max Rds On, Min Rds On): 2.5V, 4.5V
Part Status: Not For New Designs
Supplier Device Package: SOT-223 (TO-261)
Vgs(th) (Max) @ Id: 1V @ 250µA
Power Dissipation (Max): 8.3W (Ta)
Rds On (Max) @ Id, Vgs: 50mOhm @ 6A, 4.5V
Current - Continuous Drain (Id) @ 25°C: 10A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: -55°C ~ 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-261-4, TO-261AA
Packaging: Cut Tape (CT)
auf Bestellung 28208 Stücke:
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AnzahlPreis
7+2.75 EUR
11+1.75 EUR
100+1.18 EUR
500+0.93 EUR
1000+0.85 EUR
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NVR1P02T1G ntr1p02t1-d.pdf
NVR1P02T1G
Hersteller: onsemi
Description: MOSFET P-CH 20V 1A SOT-23-3
auf Bestellung 7975 Stücke:
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24+0.74 EUR
28+0.63 EUR
100+0.47 EUR
500+0.37 EUR
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NVTFS5116PLTAG nvtfs5116pl-d.pdf
NVTFS5116PLTAG
Hersteller: onsemi
Description: MOSFET P-CH 60V 6A 8WDFN
Packaging: Cut Tape (CT)
Package / Case: 8-PowerWDFN
Mounting Type: Surface Mount
Operating Temperature: -55°C ~ 175°C (TJ)
Technology: MOSFET (Metal Oxide)
FET Type: P-Channel
Current - Continuous Drain (Id) @ 25°C: 6A (Ta)
Rds On (Max) @ Id, Vgs: 52mOhm @ 7A, 10V
Power Dissipation (Max): 3.2W (Ta), 21W (Tc)
Vgs(th) (Max) @ Id: 3V @ 250µA
Supplier Device Package: 8-WDFN (3.3x3.3)
Grade: Automotive
Drive Voltage (Max Rds On, Min Rds On): 4.5V, 10V
Vgs (Max): ±20V
Drain to Source Voltage (Vdss): 60 V
Gate Charge (Qg) (Max) @ Vgs: 25 nC @ 10 V
Input Capacitance (Ciss) (Max) @ Vds: 1258 pF @ 25 V
Qualification: AEC-Q101
auf Bestellung 8921 Stücke:
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9+2.09 EUR
14+1.32 EUR
100+0.87 EUR
500+0.68 EUR
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NZ9F3V3ST5G nz9f2v4s-d.pdf
NZ9F3V3ST5G
Hersteller: onsemi
Description: DIODE ZENER 3.3V 250MW SOD923
auf Bestellung 38061 Stücke:
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25+0.72 EUR
33+0.55 EUR
100+0.31 EUR
500+0.21 EUR
1000+0.16 EUR
2000+0.14 EUR
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PCA9535EDTR2G pca9535e-d.pdf
PCA9535EDTR2G
Hersteller: onsemi
Description: IC XPND 100KHZ I2C SMBUS 24TSSOP
DigiKey Programmable: Not Verified
Part Status: Active
Current - Output Source/Sink: 10mA, 25mA
Supplier Device Package: 24-TSSOP
Interrupt Output: Yes
Clock Frequency: 100 kHz
Voltage - Supply: 1.65V ~ 5.5V
Operating Temperature: -55°C ~ 125°C
Number of I/O: 16
Interface: I2C, SMBus
Mounting Type: Surface Mount
Output Type: Push-Pull
Package / Case: 24-TSSOP (0.173", 4.40mm Width)
Features: POR
Packaging: Cut Tape (CT)
auf Bestellung 2029 Stücke:
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3+6.37 EUR
10+4.12 EUR
25+3.56 EUR
100+2.93 EUR
250+2.63 EUR
500+2.45 EUR
1000+2.3 EUR
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RB520S30T5G rb520s30t1-d.pdf
RB520S30T5G
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 200MA SOD523
Packaging: Cut Tape (CT)
Package / Case: SC-79, SOD-523
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Technology: Schottky
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOD-523
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 600 mV @ 200 mA
Current - Reverse Leakage @ Vr: 1 µA @ 10 V
auf Bestellung 12930 Stücke:
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AnzahlPreis
84+0.21 EUR
141+0.12 EUR
232+0.076 EUR
500+0.055 EUR
1000+0.048 EUR
2000+0.042 EUR
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SB01-15C-TB-E sb01-15c-d.pdf
SB01-15C-TB-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 150V 100MA 3CP
Current - Reverse Leakage @ Vr: 50 µA @ 75 V
Voltage - Forward (Vf) (Max) @ If: 750 mV @ 100 mA
Voltage - DC Reverse (Vr) (Max): 150 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 100mA
Capacitance @ Vr, F: 7pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SB02-09C-TB-E sb02-09c-d.pdf
SB02-09C-TB-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 90V 200MA 3CP
Packaging: Cut Tape (CT)
Current - Reverse Leakage @ Vr: 50 µA @ 45 V
Voltage - Forward (Vf) (Max) @ If: 700 mV @ 200 mA
Voltage - DC Reverse (Vr) (Max): 90 V
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 200mA
Capacitance @ Vr, F: 10pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Small Signal =< 200mA (Io), Any Speed
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
auf Bestellung 2941 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
22+0.81 EUR
33+0.54 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.26 EUR
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SB05-05C-TB-E sb05-05c-d.pdf
SB05-05C-TB-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 50V 500MA 3CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Capacitance @ Vr, F: 17pF @ 10V, 1MHz
Current - Average Rectified (Io): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
auf Bestellung 18556 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
19+0.97 EUR
30+0.59 EUR
100+0.38 EUR
500+0.29 EUR
1000+0.26 EUR
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SB05W05C-TB-E sb05w05c-d.pdf
SB05W05C-TB-E
Hersteller: onsemi
Description: DIODE ARRAY SCHOT 50V 500MA 3-CP
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 10 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 500mA
Supplier Device Package: 3-CP
Operating Temperature - Junction: -55°C ~ 125°C
Voltage - DC Reverse (Vr) (Max): 50 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 500 mA
Current - Reverse Leakage @ Vr: 50 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SB07-03C-TB-E en2997-d.pdf
SB07-03C-TB-E
Hersteller: onsemi
Description: DIODE SCHOTTKY 30V 700MA 3CP
Current - Reverse Leakage @ Vr: 80 µA @ 15 V
Voltage - Forward (Vf) (Max) @ If: 550 mV @ 700 mA
Voltage - DC Reverse (Vr) (Max): 30 V
Part Status: Active
Operating Temperature - Junction: -55°C ~ 125°C
Supplier Device Package: 3-CP
Current - Average Rectified (Io): 700mA
Capacitance @ Vr, F: 25pF @ 10V, 1MHz
Technology: Schottky
Reverse Recovery Time (trr): 10 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 4057 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
25+0.7 EUR
38+0.47 EUR
100+0.37 EUR
500+0.28 EUR
1000+0.25 EUR
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SBAS116LT1G bas116lt1-d.pdf
SBAS116LT1G
Hersteller: onsemi
Description: DIODE STANDARD 75V 200MA SOT233
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 3 µs
Technology: Standard
Capacitance @ Vr, F: 2pF @ 0V, 1MHz
Current - Average Rectified (Io): 200mA
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 75 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 5 nA @ 75 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 5359 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
77+0.23 EUR
130+0.14 EUR
210+0.084 EUR
500+0.061 EUR
1000+0.053 EUR
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SBAT54CLT1G bat54clt1-d.pdf
SBAT54CLT1G
Hersteller: onsemi
Description: DIODE ARR SCHOTT 30V 200MA SOT23
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Small Signal =< 200mA (Io), Any Speed
Reverse Recovery Time (trr): 5 ns
Technology: Schottky
Diode Configuration: 1 Pair Common Cathode
Current - Average Rectified (Io) (per Diode): 200mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -55°C ~ 125°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 30 V
Voltage - Forward (Vf) (Max) @ If: 800 mV @ 100 mA
Current - Reverse Leakage @ Vr: 2 µA @ 25 V
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 54765 Stücke:
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AnzahlPreis
38+0.48 EUR
63+0.28 EUR
100+0.18 EUR
500+0.13 EUR
1000+0.12 EUR
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SBAV99LT1G bav99lt1-d.pdf
SBAV99LT1G
Hersteller: onsemi
Description: DIODE ARR GP 100V 215MA SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA (DC)
Supplier Device Package: SOT-23-3 (TO-236)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBAV99WT1G bav99wt1-d.pdf
SBAV99WT1G
Hersteller: onsemi
Description: DIODE ARRAY GP 100V 215MA SC70-3
Packaging: Cut Tape (CT)
Package / Case: SC-70, SOT-323
Mounting Type: Surface Mount
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Reverse Recovery Time (trr): 6 ns
Technology: Standard
Diode Configuration: 1 Pair Series Connection
Current - Average Rectified (Io) (per Diode): 215mA
Supplier Device Package: SC-70-3 (SOT323)
Operating Temperature - Junction: -65°C ~ 150°C
Part Status: Active
Voltage - DC Reverse (Vr) (Max): 100 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 150 mA
Current - Reverse Leakage @ Vr: 1 µA @ 100 V
Grade: Automotive
Qualification: AEC-Q101
Produkt ist nicht verfügbar
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SBC846ALT1G bc846alt1-d.pdf
SBC846ALT1G
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 110 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 4353 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
63+0.28 EUR
103+0.17 EUR
167+0.11 EUR
500+0.077 EUR
1000+0.068 EUR
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SBC846BLT1G bc846alt1-d.pdf
SBC846BLT1G
Hersteller: onsemi
Description: TRANS NPN 65V 0.1A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 600mV @ 5mA, 100mA
Current - Collector Cutoff (Max): 15nA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce: 200 @ 2mA, 5V
Frequency - Transition: 100MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 100 mA
Voltage - Collector Emitter Breakdown (Max): 65 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 664289 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
67+0.26 EUR
112+0.16 EUR
181+0.098 EUR
500+0.071 EUR
1000+0.062 EUR
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SFT1345-TL-H sft1345-d.pdf
SFT1345-TL-H
Hersteller: onsemi
Description: MOSFET P-CH 100V 11A TP-FA
Input Capacitance (Ciss) (Max) @ Vds: 1020 pF @ 20 V
Gate Charge (Qg) (Max) @ Vgs: 21 nC @ 10 V
Drain to Source Voltage (Vdss): 100 V
Vgs (Max): ±20V
Drive Voltage (Max Rds On, Min Rds On): 4V, 10V
Supplier Device Package: TP-FA
Power Dissipation (Max): 1W (Ta), 35W (Tc)
Rds On (Max) @ Id, Vgs: 275mOhm @ 5.5A, 10V
Current - Continuous Drain (Id) @ 25°C: 11A (Ta)
FET Type: P-Channel
Technology: MOSFET (Metal Oxide)
Operating Temperature: 150°C (TJ)
Mounting Type: Surface Mount
Package / Case: TO-252-3, DPak (2 Leads + Tab), SC-63
Packaging: Cut Tape (CT)
Produkt ist nicht verfügbar
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SL12T1G sl05t1-d.pdf
SL12T1G
Hersteller: onsemi
Description: TVS DIODE 12VWM 24VC SOT233
Qualification: AEC-Q101
Grade: Automotive
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 13.3V
Unidirectional Channels: 1
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 12V
Current - Peak Pulse (10/1000µs): 5A (8/20µs)
Capacitance @ Frequency: 3.5pF @ 1MHz
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
auf Bestellung 2615 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
46+0.39 EUR
55+0.33 EUR
100+0.28 EUR
500+0.25 EUR
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SM15T1G sm12t1-d.pdf
SM15T1G
Hersteller: onsemi
Description: TVS DIODE 15VWM 24VC SOT233
Part Status: Active
Power Line Protection: No
Power - Peak Pulse: 300W
Voltage - Clamping (Max) @ Ipp: 24V
Voltage - Breakdown (Min): 16.7V
Unidirectional Channels: 2
Supplier Device Package: SOT-23-3 (TO-236)
Voltage - Reverse Standoff (Typ): 15V
Current - Peak Pulse (10/1000µs): 10A (8/20µs)
Package / Case: TO-236-3, SC-59, SOT-23-3
Packaging: Cut Tape (CT)
Applications: General Purpose
Operating Temperature: -55°C ~ 150°C (TJ)
Type: Zener
Mounting Type: Surface Mount
auf Bestellung 19534 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
18+1 EUR
29+0.61 EUR
100+0.39 EUR
500+0.3 EUR
1000+0.26 EUR
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SMMBT3906LT1G mmbt3906lt1-d.pdf
SMMBT3906LT1G
Hersteller: onsemi
Description: TRANS PNP 40V 0.2A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: PNP
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 400mV @ 5mA, 50mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 100 @ 10mA, 1V
Frequency - Transition: 250MHz
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 200 mA
Voltage - Collector Emitter Breakdown (Max): 40 V
Power - Max: 300 mW
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 37685 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
72+0.25 EUR
115+0.15 EUR
188+0.094 EUR
500+0.068 EUR
1000+0.06 EUR
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SMMBT5551LT1G mmbt5550lt1-d.pdf
SMMBT5551LT1G
Hersteller: onsemi
Description: TRANS NPN 160V 0.6A SOT23-3
Packaging: Cut Tape (CT)
Package / Case: TO-236-3, SC-59, SOT-23-3
Mounting Type: Surface Mount
Transistor Type: NPN
Operating Temperature: -55°C ~ 150°C (TJ)
Vce Saturation (Max) @ Ib, Ic: 200mV @ 5mA, 50mA
Current - Collector Cutoff (Max): 100nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 10mA, 5V
Supplier Device Package: SOT-23-3 (TO-236)
Part Status: Active
Current - Collector (Ic) (Max): 600 mA
Voltage - Collector Emitter Breakdown (Max): 160 V
Power - Max: 225 mW
auf Bestellung 19729 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
53+0.33 EUR
87+0.2 EUR
141+0.13 EUR
500+0.091 EUR
1000+0.08 EUR
Mindestbestellmenge: 53 Stücke
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SMUN5214DW1T1G dtc114yd-d.pdf
SMUN5214DW1T1G
Hersteller: onsemi
Description: TRANS 2NPN PREBIAS 0.187W SOT363
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Voltage - Collector Emitter Breakdown (Max): 50V
Current - Collector (Ic) (Max): 100mA
Power - Max: 187mW
Transistor Type: 2 NPN - Pre-Biased (Dual)
Mounting Type: Surface Mount
Package / Case: 6-TSSOP, SC-88, SOT-363
Packaging: Cut Tape (CT)
Qualification: AEC-Q101
Grade: Automotive
Part Status: Active
Supplier Device Package: SC-88/SC70-6/SOT-363
Resistor - Emitter Base (R2): 47kOhms
Resistor - Base (R1): 10kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Current - Collector Cutoff (Max): 500nA
auf Bestellung 30464 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
39+0.46 EUR
64+0.28 EUR
102+0.17 EUR
500+0.13 EUR
1000+0.11 EUR
Mindestbestellmenge: 39 Stücke
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SMUN5313DW1T1G dtc144ep-d.pdf
SMUN5313DW1T1G
Hersteller: onsemi
Description: TRANS PREBIAS 1NPN 1PNP SOT-363
Packaging: Cut Tape (CT)
Package / Case: 6-TSSOP, SC-88, SOT-363
Mounting Type: Surface Mount
Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
Power - Max: 187mW
Current - Collector (Ic) (Max): 100mA
Voltage - Collector Emitter Breakdown (Max): 50V
Vce Saturation (Max) @ Ib, Ic: 250mV @ 300µA, 10mA
Current - Collector Cutoff (Max): 500nA
DC Current Gain (hFE) (Min) @ Ic, Vce: 80 @ 5mA, 10V
Resistor - Base (R1): 47kOhms
Resistor - Emitter Base (R2): 47kOhms
Supplier Device Package: SC-88/SC70-6/SOT-363
Part Status: Active
Grade: Automotive
Qualification: AEC-Q101
auf Bestellung 3000 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
44+0.4 EUR
72+0.24 EUR
115+0.15 EUR
500+0.11 EUR
1000+0.099 EUR
Mindestbestellmenge: 44 Stücke
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SURS8340T3G murs320t3-d.pdf
SURS8340T3G
Hersteller: onsemi
Description: DIODE STANDARD 400V 3A SMC
Current - Reverse Leakage @ Vr: 10 µA @ 400 V
Voltage - Forward (Vf) (Max) @ If: 1.25 V @ 3 A
Voltage - DC Reverse (Vr) (Max): 400 V
Operating Temperature - Junction: -65°C ~ 175°C
Supplier Device Package: SMC
Current - Average Rectified (Io): 3A
Technology: Standard
Reverse Recovery Time (trr): 75 ns
Speed: Fast Recovery =< 500ns, > 200mA (Io)
Mounting Type: Surface Mount
Package / Case: DO-214AB, SMC
Packaging: Cut Tape (CT)
auf Bestellung 3136 Stücke:
Lieferzeit 10-14 Tag (e)
AnzahlPreis
31+0.58 EUR
33+0.54 EUR
Mindestbestellmenge: 31 Stücke
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